Renesas 71V35761SA183BQG8

Overview

71V35761SA183BQG8 from IDT is a 128K × 36-bit, 3.3V synchronous SRAM with pipelined outputs, burst counter, and single-cycle deselect. It operates at 183MHz (3.3ns clock access time), supports linear/interleaved burst modes via LBO input, and features JTAG boundary scan (IEEE 1149.1) in SA version. Used in high-speed cache and memory subsystems for network processors and telecom line cards.

For engineers reviewing the 71V35761SA183BQG8 datasheet, 71V35761SA183BQG8 pinout, 71V35761SA183BQG8 application, or 71V35761SA183BQG8 equivalent, key selection criteria include burst mode timing compliance, ZZ sleep-mode current (30mA), TQFP-100 package compatibility, and JTAG-enabled testability for production validation.

Technical Context

The 71V35761SA183BQG8 implements a synchronous, clock-driven architecture with registered address, data, and control paths. Its internal burst address counter generates four sequential 36-bit words per address, with pipelined output staging enabling one-cycle latency on first word and subsequent words aligned to rising CLK edges.

Burst order is determined by static LBO pin state (LOW = linear, HIGH = interleaved), while ADV controls burst advance. Write operations support global (GW) or byte-selectable (BW1–BW4 + BWE) modes, with self-timed write completion governed by CE, ADSP/ADSC, and CLK synchronization.

Key Specifications

Pinout & Package

Packaged in JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm body, 0.5 mm pitch. Pin 1 marked by dot; pins A0–A17, I/O0–I/O31, I/OP1–I/OP4, and dedicated control signals occupy perimeter with VDD/VDDQ/VSS distributed across multiple pins for noise reduction.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1362BV33-167AXC and AS7C312836B-167BIN, the 71V35761SA183BQG8 delivers higher bandwidth via pipelined burst reads, deterministic sleep-mode entry/exit, and production-ready JTAG validation - critical for telecom and defense applications requiring traceable test coverage.

Availability

71V35761SA183BQG8 is available at Aetrix Electronics and suitable for network processor cache, telecom line card buffer, radar signal processing memory, and avionics data acquisition buffer applications requiring stable component supply and long-term industrial-grade availability.

Supply support for 71V35761SA183BQG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology) is a fabless semiconductor company specializing in high-performance timing, memory interface, and RF solutions, now part of Renesas Electronics.

The 71V35761SA183BQG8 belongs to IDT's high-speed synchronous SRAM product line, designed specifically for low-latency, burst-capable memory subsystems in networking, communications, and real-time embedded systems.

FAQ

What is the maximum operating frequency of the 71V35761SA183BQG8?

The 71V35761SA183BQG8 is rated for 183 MHz operation, corresponding to a 5.5 ns clock cycle time and 3.3 ns clock-to-data access time. This speed grade is validated across the industrial temperature range (–40°C to +85°C) with VDD and VDDQ at 3.3 V ±5%. The device also supports 166 MHz and 200 MHz variants, but the 71V35761SA183BQG8 part number specifically denotes the 183 MHz industrial-grade version.

Does the 71V35761SA183BQG8 support both linear and interleaved burst modes?

Yes, the 71V35761SA183BQG8 supports both burst modes via the LBO (Linear/Interleaved Burst Order) pin. When LBO is driven LOW, the device executes linear burst addressing (00→01→10→11); when HIGH, it uses interleaved order (00→01→11→10). This selection is static and must remain stable during operation. The burst counter automatically increments on each ADV assertion, delivering four 36-bit words per initiated burst sequence.

What is the function of the ZZ pin on the 71V35761SA183BQG8?

The ZZ pin on the 71V35761SA183BQG8 is an asynchronous, HIGH-active sleep mode enable. When ZZ is driven HIGH, the internal clock is gated and the device enters full sleep mode with IZZ current limited to 30 mA (industrial grade), while retaining full data integrity. Recovery requires tZZR ≥ 100 ns after ZZ returns LOW before normal operation resumes. ZZ has an internal pull-down resistor.

Is JTAG boundary scan available on the 71V35761SA183BQG8?

Yes, the "SA" suffix in 71V35761SA183BQG8 explicitly denotes inclusion of IEEE 1149.1-compliant JTAG boundary scan. Pins TMS, TDI, TCK, TDO, and optional TRST are assigned on the 100-pin TQFP package. JTAG functionality is fully integrated and usable for production ICT, board-level validation, and in-system programming verification without requiring external test fixtures.

How does the 71V35761SA183BQG8 handle byte-write operations?

The 71V35761SA183BQG8 supports granular byte writes using BWE (byte write enable) and four BWx signals (BW1–BW4). BWE must be LOW to activate byte write mode; then individual BWx lines select 9-bit byte lanes: BW1 → I/O0–7 + I/OP1, BW2 → I/O8–15 + I/OP2, etc. Any active BWx disables all outputs during the write cycle, ensuring clean bus isolation. Global write (GW) overrides byte-write selection when asserted.