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Renesas 71V35761SA200BG
- Part No.:
- 71V35761SA200BG
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 119-BGA
- Datasheet:
-
71V35761SA200BG.pdf
- Description:
- IC SRAM 4.5MBIT PAR 119PBGA
- Quantity:
- Payment:
- Shipping:
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Product details
Overview
71V35761SA200BG from IDT is a 128K × 36-bit, 3.3V synchronous SRAM with pipelined outputs, burst counter, single-cycle deselect, and JTAG boundary scan (IEEE 1149.1). It operates at 200MHz (3.1ns clock access) in commercial temperature range (0°C to +70°C), supports linear/interleaved burst modes via LBO pin, and features self-timed write with global/byte write control - deployed in high-speed networking line cards and packet buffer subsystems.
For engineers reviewing the 71V35761SA200BG datasheet, 71V35761SA200BG pinout, 71V35761SA200BG application, or 71V35761SA200BG equivalent, key selection considerations include burst mode timing compliance, ZZ sleep-mode recovery (tZZR = 100ns), TQFP/BGA package compatibility, and JTAG configuration requirements for system-level testability.
Technical Context
The 71V35761SA200BG implements a synchronous, clock-driven architecture with registered address, data, and control paths. Its internal burst counter advances on ADV=LOW and selects linear or interleaved sequences based on static LBO input - enabling four-word burst reads/writes per address cycle without external sequencing logic.
It integrates dual power domains (VDD = 3.3V core, VDDQ = 3.3V I/O), asynchronous ZZ sleep control (with 30mA full-sleep current), and IEEE 1149.1-compliant JTAG interface (TMS/TDI/TCK/TRST/TDO) available only in BGA variants - supporting boundary scan testing and in-system configuration verification.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 128K × 36 bits = 4.608 Mbit; supports 36-bit parallel data path for wide-bus applications like packet buffering. |
| Clock Frequency / Access Time | 200 MHz / 3.1 ns (commercial grade); defines maximum sustained read/write throughput of 800 MB/s in burst mode. |
| Burst Mode Control | LBO pin selects linear or interleaved 4-word burst sequence; eliminates need for external address sequencer in cache or FIFO designs. |
| Power Supply | VDD = 3.3 V ±5%, VDDQ = 3.3 V ±5%; separate core/I/O rails enable noise isolation and signal integrity optimization. |
| Sleep Current (IZZ) | 30 mA max at VDD = 3.465 V; enables low-power idle states in telecom equipment during traffic lulls. |
| JTAG Support | IEEE 1149.1 compliant (TMS/TDI/TCK/TRST/TDO); provides production test coverage and debug visibility without dedicated test pins. |
| Operating Temperature | Commercial range: 0°C to +70°C; validated for stable operation in controlled-environment infrastructure gear. |
Pinout & Package
Packaged in JEDEC-standard 119-ball BGA (BG119, 12 mm × 12 mm, 1.0 mm pitch), the 71V35761SA200BG supports high-density PCB layouts and thermal performance suitable for multi-layer telecom modules.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | 18-bit synchronous address bus; latched on rising CLK edge with ADSP/ADSC assertion - enables 128K depth addressing. |
| CLK | System Clock Input | Single-ended 200 MHz reference; all registers (address, data, control) are edge-triggered - defines timing budget for entire SRAM interface. |
| GW, BWE, BW1–BW4 | Write Control Inputs | Global Write (GW) enables full 36-bit writes; BWE + BWx allow byte-selectable 9-bit writes - critical for partial-word packet updates. |
| ADV, ADSP, ADSC | Burst & Address Status | ADV advances internal burst counter; ADSP (processor) and ADSC (cache controller) trigger address latching - supports dual-bus coherency. |
| LBO | Burst Order Select | Static DC input (HIGH = interleaved, LOW = linear); must remain stable during operation - configures burst address generation logic. |
| ZZ | Asynchronous Sleep Enable | Drives internal clock gating when HIGH; guarantees data retention while reducing supply current to 30 mA - used for dynamic power management. |
| TMS–TDO, TRST | JTAG Test Interface | IEEE 1149.1 boundary scan chain (5-pin); enables structural test, net connectivity validation, and in-circuit programming support. |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O (36-bit) | Synchronous bidirectional bus with pipelined output register; O1–O4 appear on successive CLK edges after burst initiation - reduces timing closure effort. |
Key Features
| Feature | Design Value |
|---|---|
| Pipelined Burst Outputs | First data word appears one clock cycle after address latch; subsequent words align to next three CLK edges - eliminates wait states in high-throughput pipelines. |
| Single-Cycle Deselect | Chip deactivation completes within one CLK cycle upon CE/CS assertion change - prevents bus contention during rapid context switching. |
| Self-Timed Write Cycle | Internal timing logic resolves write completion without external strobes; supports variable-latency memory controllers and simplifies timing margining. |
| Linear/Interleaved Burst Selection | LBO pin statically configures burst address sequence - matches CPU cache line ordering (linear) or DSP DMA patterns (interleaved). |
| JTAG Boundary Scan (SA version) | Fully compliant IEEE 1149.1 interface with optional TRST; enables automated test pattern generation and fault isolation in assembled systems. |
Applications
| Networking Line Card Buffer | High-Speed Packet Switch ASIC Interface |
|---|---|
Use Scenario: Stores ingress/egress packet headers and metadata in Layer 2/3 switches operating at 10 Gbps+ line rates. IC Role / Device Role / Timing Role: Synchronous SRAM acting as low-latency, burst-capable packet buffer with pipelined read outputs aligned to switch fabric clock. Use Value: 200 MHz operation and single-cycle deselect enable real-time packet steering with sub-10 ns timing margins. |
Use Scenario: Interfaces directly with multi-port switch ASICs requiring 36-bit wide, burst-access memory for forwarding table lookups. IC Role / Device Role / Timing Role: External memory resource providing deterministic 3.1 ns access time and burst-aligned data delivery to ASIC's internal pipeline. Use Value: Linear burst mode matches ASIC's sequential CAM lookup pattern, reducing average latency by 30% vs. random access. |
| Telecom Baseband Processing | Industrial Real-Time Control Buffer |
Use Scenario: Buffers IQ samples between FPGA-based digital downconverters and DSP cores in 4G/5G remote radio units. IC Role / Device Role / Timing Role: High-reliability SRAM with JTAG testability serving as shared memory between processing stages in radiation-sensitive environments. Use Value: IEEE 1149.1 boundary scan validates interconnect integrity post-assembly, meeting IEC 61508 functional safety requirements. |
Use Scenario: Holds motion control command queues and sensor fusion buffers in CNC machine controllers requiring deterministic response under 100 µs. IC Role / Device Role / Timing Role: Low-jitter, clock-synchronized memory ensuring jitter-free data handoff between real-time OS tasks and FPGA I/O engines. Use Value: ZZ sleep mode reduces standby power by 75% during axis dwell periods while preserving queue state for instant resumption. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1362BV33-200BZXI | 128K × 32 organization, no JTAG, 200 MHz, -40°C to +85°C industrial grade | Lacks burst counter and pipelined outputs; requires external address sequencing for multi-word transfers | Select when wider temperature range is mandatory and burst functionality is implemented externally. |
| AS7C33128P-20JCIN | 128K × 36, 3.3V, 200 MHz, no JTAG, TQFP-100 only, commercial temp only | Missing ZZ sleep and LBO burst mode control; uses standard asynchronous OE instead of pipelined output register | Choose for cost-sensitive designs where JTAG testability and low-power sleep are not required. |
Compared with CY7C1362BV33-200BZXI and AS7C33128P-20JCIN, the 71V35761SA200BG uniquely delivers integrated burst sequencing, pipelined outputs, and IEEE 1149.1 JTAG - making it optimal for space-constrained, test-critical telecom and high-performance computing modules where timing predictability and production test coverage are non-negotiable.
Availability
71V35761SA200BG is available at Aetrix Electronics and suitable for networking line cards, packet switch ASIC interfaces, telecom baseband processing, and industrial real-time control systems requiring stable component supply, long-lifecycle support, and traceable sourcing.
Supply support for 71V35761SA200BG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
IDT (Integrated Device Technology) is a fabless semiconductor company specializing in high-performance timing, memory interface, and RF solutions for communications and computing infrastructure.
The 71V35761SA200BG belongs to IDT's high-speed synchronous SRAM product line, engineered specifically for low-latency, burst-oriented data buffering in network processors, switch fabrics, and baseband subsystems.
FAQ
What is the maximum clock frequency supported by the 71V35761SA200BG?
The 71V35761SA200BG supports up to 200 MHz operation with a guaranteed 3.1 ns clock access time under commercial temperature conditions (0°C to +70°C). This frequency is validated across all 119-ball BGA units and corresponds to a minimum clock cycle time of 5 ns. The device does not support 200 MHz operation in industrial temperature range - that grade is limited to 183 MHz (3.3 ns) and 166 MHz (3.5 ns).
Does the 71V35761SA200BG support both linear and interleaved burst modes?
Yes, the 71V35761SA200BG supports both linear and interleaved burst modes via the LBO (Linear/Interleaved Burst Order) pin. When LBO is driven LOW, the internal burst counter follows linear addressing (00→01→10→11); when HIGH, it follows interleaved order (00→01→11→10). This selection is static and must remain stable during active operation - confirmed in the Interleaved and Linear Burst Sequence Tables (Tables 14 and 15).
Is JTAG boundary scan available on all package variants of the 71V35761SA200BG?
No, JTAG boundary scan is exclusive to the "SA" version and only implemented in BGA packages (119-ball BG119 and 165-ball fBGA). The "S" version lacks JTAG signals entirely, and the 100-pin TQFP variant - even in SA form - does not include TMS/TDI/TCK/TRST/TDO pins. The 71V35761SA200BG specifically uses the 119-ball BGA, so JTAG is fully available and IEEE 1149.1 compliant.
What is the function of the ZZ pin on the 71V35761SA200BG?
The ZZ pin on the 71V35761SA200BG is an asynchronous sleep mode enable input. When driven HIGH, it gates the internal clock and reduces supply current to 30 mA (IZZ), while guaranteeing data retention. Recovery time (tZZR) is 100 ns, and minimum pulse width (tZZPW) is also 100 ns. ZZ has an internal pull-down resistor, so it defaults to active mode if left unconnected - a key design detail for fail-safe initialization.
How many byte-write enable signals does the 71V35761SA200BG support, and what is their mapping?
The 71V35761SA200BG supports four individual byte-write enable signals: BW1, BW2, BW3, and BW4. Each controls a 9-bit segment of the 36-bit data bus: BW1 → I/O0–I/O7 + I/OP1; BW2 → I/O8–I/O15 + I/OP2; BW3 → I/O16–I/O23 + I/OP3; BW4 → I/O24–I/O31 + I/OP4. Byte writes are enabled only when BWE is LOW, and any active BWx disables all outputs - a behavior explicitly defined in the Synchronous Write Function Truth Table (Table 12).
71V35761SA200BG Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 119-BGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 4.5Mbit
- Memory Organization:
- 128K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 200 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 3.1 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 119-PBGA (14x22)
71V35761SA200BG FAQ
1.How can I place an order for 71V35761SA200BG through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V35761SA200BG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V35761SA200BG reliable?
The price and inventory of 71V35761SA200BG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V35761SA200BG is usually 5 days.
3.What payment methods are accepted for 71V35761SA200BG?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V35761SA200BG transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 71V35761SA200BG?
71V35761SA200BG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V35761SA200BG order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V35761SA200BG?
For technical support, including 71V35761SA200BG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V35761SA200BG requirements.
6.How does Aetrix verify that 71V35761SA200BG is sourced from the original manufacturer or authorized distributors?
All 71V35761SA200BG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V35761SA200BG meets industry standards.
7.What is the process for return or replacement of 71V35761SA200BG?
All 71V35761SA200BG units undergo pre-shipment inspection (PSI). If there is an issue with 71V35761SA200BG, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V35761SA200BG part is unused and in its original packaging.
Return procedure for 71V35761SA200BG:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V35761SA200BG Tags
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M24C02-WMN6TP
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AT24C02C-XHM-T
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AT21CS01-STUM10-T
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24LC01BT-I/OT
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M24C02-FMC6TG
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AT24CS02-SSHM-T
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93LC46BT-I/OT
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AT24C04C-SSHM-T
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24LC01BT-I/SN
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24AA02UIDT-I/OT
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