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Renesas 71V35761SA200BG8
- Part No.:
- 71V35761SA200BG8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 119-BGA
- Datasheet:
-
71V35761SA200BG8.pdf
- Description:
- IC SRAM 4.5MBIT PAR 119PBGA
- Quantity:
- Payment:
- Shipping:
Inventory:3,039
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Product details
Overview
71V35761SA200BG8 from IDT is a 128K × 36-bit, 3.3V synchronous SRAM with pipelined outputs, burst counter, and single-cycle deselect. It supports 200MHz operation (3.1ns clock access), features JTAG boundary scan (IEEE 1149.1), linear/interleaved burst mode via LBO, and operates across industrial temperature range (–40°C to +85°C). Used in high-speed networking and cache subsystems requiring deterministic latency.
For engineers reviewing the 71V35761SA200BG8 datasheet, 71V35761SA200BG8 pinout, 71V35761SA200BG8 application, or 71V35761SA200BG8 equivalent, key selection criteria include burst-mode timing compliance, ZZ sleep-mode current (30µA), TQFP-100 vs BGA-119 package compatibility, and JTAG-enabled testability for production validation.
Technical Context
This device implements a synchronous, clock-driven architecture with registered address, data, and control paths. Its internal burst counter advances on ADV=LOW and supports four-word bursts with pipelined output staging-first word appears one clock cycle after address latch, subsequent words on successive rising edges.
Write operations support global (GW) or byte-level (BW1–BW4) control with self-timed write cycles gated by CE, CS0/CS1, and ADSP/ADSC status inputs. Sleep mode is activated asynchronously via ZZ HIGH, reducing supply current to 30mA while retaining data.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 128K × 36-bit = 4.608 Mbit; supports 36-bit parallel bus interface with parity pins I/OP1–I/OP4 |
| Max Clock Frequency | 200 MHz (commercial); enables 5 ns clock cycle time for high-throughput memory access in packet buffers |
| Access Time | 3.1 ns (tCD) at 200 MHz; defines minimum clock-to-data valid delay for timing-critical read pipelines |
| Supply Voltages | VDD = 3.3 V ±5% (core), VDDQ = 3.3 V ±5% (I/O); separate rails allow independent noise management |
| Sleep Current | 30 mA (IZZ) at VDD = max; ensures low-power retention during idle periods in telecom line cards |
| Burst Mode Control | LBO input selects linear or interleaved address sequence; critical for cache-line alignment with x86 or PowerPC processors |
| JTAG Support | IEEE 1149.1 compliant with TMS/TDI/TCK/TRST/TDO; enables board-level structural test without external probes |
Pinout & Package
71V35761SA200BG8 is packaged in a JEDEC-standard 119-ball BGA (BG119, 12 mm × 12 mm, 0.8 mm pitch), with ball assignments matching the SA variant's JTAG implementation (TMS/TDI/TCK/TRST/TDO present).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A16 | Address Inputs | 17-bit address bus latched synchronously on rising CLK edge with ADSP/ADSC; supports full 128K depth |
| CLK | System Clock Input | Primary timing reference; all registers (address, data, control) triggered on rising edge |
| GW, BWE, BW1–BW4 | Write Control Inputs | GW enables full 36-bit writes; BWE gates byte enables; BWx select 9-bit subwords (I/O0–7/I/OP1, etc.) |
| ADV, ADSP, ADSC | Burst & Address Status | ADV advances internal burst counter; ADSP (processor) and ADSC (cache) load address register independently |
| LBO | Burst Order Select | Asynchronous static input: LOW = linear burst (0,1,2,3), HIGH = interleaved (0,2,1,3) per A0/A1 LSBs |
| ZZ | Sleep Mode Enable | Asynchronous HIGH disables internal clock and reduces IDD to 30 mA; retains memory contents |
| TMS–TDO | JTAG Test Interface | Boundary-scan chain for interconnect testing; TRST optional asynchronous reset (BGA only) |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O with Parity | 36-bit bidirectional bus; all inputs/outputs registered to CLK; I/OPx provide parity for corresponding 8-bit bytes |
Key Features
| Feature | Design Value |
|---|---|
| Pipelined Burst Output | First data word available one clock cycle after address latch; subsequent words on next three rising edges-reduces average read latency in burst-intensive applications |
| Single-Cycle Deselect | Chip deactivation completes within one CLK period upon CE/CS assertion change-enables rapid bank switching in multi-SRAM systems |
| Self-Timed Write Cycle | Internal timing logic eliminates need for external write pulse generation; simplifies controller design and improves setup/hold margin |
| Separate Core & I/O Supplies | VDD (core) and VDDQ (I/O) allow independent decoupling and noise isolation-critical for signal integrity at 200 MHz |
| Industrial Temperature Range | –40°C to +85°C operation validated across speed grades-suitable for base station RF modules and industrial PLCs |
Applications
| High-Speed Network Packet Buffer | Multi-Core Processor Cache Tag RAM |
|---|---|
Use Scenario: Storing ingress/egress packet headers and metadata in 10G/25G Ethernet switch ASICs. IC Role / Device Role / Timing Role: Synchronous SRAM serving as low-latency, burst-capable buffer with pipelined reads aligned to line-rate clocks. Use Value: 3.1 ns tCD and 200 MHz clocking enable real-time header inspection without pipeline stalls. | Use Scenario: Holding cache tag arrays and directory entries in dual-socket server CPUs with coherent interconnects. IC Role / Device Role / Timing Role: Deterministic-access tag RAM supporting simultaneous tag lookup and replacement during cache line fills. Use Value: Single-cycle deselect and burst counter allow concurrent tag access across multiple cores without arbitration delay. |
| Telecom Line Card Control Memory | Avionics Data Acquisition Buffer |
Use Scenario: Storing configuration state and real-time statistics in carrier-grade SDH/SONET line cards operating at –40°C to +85°C. IC Role / Device Role / Timing Role: Industrial-grade SRAM with JTAG testability and ZZ sleep mode for power-gated standby states. Use Value: 30 mA IZZ current and IEEE 1149.1 compliance reduce test cost and extend battery-backed uptime. | Use Scenario: Capturing high-fidelity sensor streams (IMU, pressure, temp) in flight control computers with strict DO-254 compliance. IC Role / Device Role / Timing Role: Radiation-tolerant-qualified SRAM (via IDT's aerospace program) used as deterministic acquisition FIFO. Use Value: Pipelined outputs and burst counter ensure jitter-free sampling at 166 MHz, meeting ARINC 664 Part 7 timing budgets. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1362BV33-200BZXI | 128K × 36, 200 MHz, 3.3V, no JTAG; uses different burst sequencing (linear only) and lacks ADSC input | Targeted at simpler cache controllers without cache coherency requirements; no boundary-scan test support | Select when JTAG is unnecessary and ADSC-based address loading is unused |
| IS61WV12836BLL-200BLI | 128K × 36, 200 MHz, 3.3V, no burst counter or pipelined outputs; asynchronous OE with 8 ns access | Suitable for non-burst, register-file-style usage where deterministic pipeline depth is not required | Select when system does not rely on burst-mode throughput or pipelined latency optimization |
Compared with CY7C1362BV33-200BZXI and IS61WV12836BLL-200BLI, the 71V35761SA200BG8 uniquely delivers JTAG testability, dual-address-status inputs (ADSP/ADSC), and configurable burst order-making it optimal for complex, test-critical, multi-master systems.
Availability
71V35761SA200BG8 is available at Aetrix Electronics and suitable for high-speed network packet buffers, multi-core processor cache tag RAM, and telecom line card control memory requiring stable component supply across extended temperature ranges.
Supply support for 71V35761SA200BG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
IDT (Integrated Device Technology) is a fabless semiconductor company specializing in timing, memory interface, and RF power solutions, now part of Renesas Electronics.
The 71V35761SA200BG8 belongs to IDT's high-speed synchronous SRAM product line, engineered for deterministic latency, burst efficiency, and JTAG-enabled testability in mission-critical infrastructure equipment.
FAQ
What is the maximum operating frequency of the 71V35761SA200BG8?
The 71V35761SA200BG8 is rated for 200 MHz operation in commercial temperature range, delivering a 3.1 ns clock-to-data valid delay (tCD). At this speed, it achieves a 5 ns clock cycle time (tCYC), enabling high-bandwidth data transfers in packet-processing and cache subsystems.
Does the 71V35761SA200BG8 support JTAG boundary scan?
Yes, the 71V35761SA200BG8 includes an optional IEEE 1149.1-compliant JTAG interface with TMS, TDI, TCK, TDO, and TRST pins. This feature is implemented in the SA version and is available in the 119-ball BGA package, supporting structural test and debug in production environments.
How does the LBO pin affect burst addressing in the 71V35761SA200BG8?
The LBO (Linear/Interleaved Burst Order) pin configures the internal burst counter sequence: when LBO = LOW, the device uses linear burst order (0,1,2,3); when LBO = HIGH, it uses interleaved order (0,2,1,3). This setting must remain static during operation and directly impacts cache-line alignment with host processors.
What is the power consumption of the 71V35761SA200BG8 in sleep mode?
In full sleep mode (ZZ = HIGH), the 71V35761SA200BG8 draws 30 mA typical supply current (IZZ) at maximum VDD. This low-power state retains all memory contents and allows rapid wake-up (<100 ns recovery time) without data loss, ideal for energy-constrained telecom and avionics platforms.
Which package type is used for the 71V35761SA200BG8?
The 71V35761SA200BG8 uses a 119-ball fine-pitch BGA (BG119) package measuring 12 mm × 12 mm with 0.8 mm ball pitch. This package supports the SA variant's JTAG signals and meets JEDEC standards for thermal and mechanical reliability in high-density PCB layouts.
71V35761SA200BG8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 119-BGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 4.5Mbit
- Memory Organization:
- 128K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 200 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 3.1 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 119-PBGA (14x22)
71V35761SA200BG8 FAQ
1.How can I place an order for 71V35761SA200BG8 through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V35761SA200BG8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V35761SA200BG8 reliable?
The price and inventory of 71V35761SA200BG8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V35761SA200BG8 is usually 5 days.
3.What payment methods are accepted for 71V35761SA200BG8?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V35761SA200BG8 transactions.
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4.How is shipping managed for 71V35761SA200BG8?
71V35761SA200BG8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V35761SA200BG8 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V35761SA200BG8?
For technical support, including 71V35761SA200BG8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V35761SA200BG8 requirements.
6.How does Aetrix verify that 71V35761SA200BG8 is sourced from the original manufacturer or authorized distributors?
All 71V35761SA200BG8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V35761SA200BG8 meets industry standards.
7.What is the process for return or replacement of 71V35761SA200BG8?
All 71V35761SA200BG8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V35761SA200BG8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V35761SA200BG8 part is unused and in its original packaging.
Return procedure for 71V35761SA200BG8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V35761SA200BG8 Tags
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M24C02-WMN6TP
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AT24C02C-XHM-T
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AT21CS01-STUM10-T
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AT24C02C-SSHM-T
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24LC01BT-I/OT
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M24C02-FMC6TG
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
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AT24C04C-SSHM-T
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24LC01BT-I/SN
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24AA02UIDT-I/OT
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AT24C08C-STUM-T
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