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Renesas 71V35761SA200BGG
- Part No.:
- 71V35761SA200BGG
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 119-BGA
- Datasheet:
-
71V35761SA200BGG.pdf
- Description:
- IC SRAM 4.5MBIT PAR 119PBGA
- Quantity:
- Payment:
- Shipping:
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Product details
Overview
71V35761SA200BGG from IDT is a 128K × 36-bit, 3.3V synchronous SRAM with pipelined outputs, burst counter, and single-cycle deselect. It supports 200MHz operation (3.1ns clock access), features JTAG IEEE 1149.1 boundary scan, and operates across industrial temperature range (–40°C to +85°C). Used in high-speed cache and memory subsystems for network processors and telecom baseband controllers.
For engineers reviewing the 71V35761SA200BGG datasheet, 71V35761SA200BGG pinout, 71V35761SA200BGG application, or 71V35761SA200BGG equivalent, key selection criteria include burst mode timing (linear/interleaved via LBO), self-timed write control (GW/BWE/BWx), sleep mode power management (ZZ input), and JEDEC-standard 119-ball BGA (BGG) packaging compatibility.
Technical Context
The 71V35761SA200BGG implements a synchronous, clock-driven architecture with registered address, data, and control paths. Its internal burst counter generates four sequential addresses per initial address, supporting both linear and interleaved sequences selected by the asynchronous LBO pin.
It integrates dual supply domains (VDD = 3.3V core, VDDQ = 3.3V I/O), supports byte-selectable writes across four 9-bit groups (BW1–BW4), and provides three power states: active (IDD = 360mA @ 200MHz), standby (ISB1 = 30mA), and full sleep (IZZ = 30mA) via asynchronous ZZ assertion.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 128K × 36 bits = 4.608 Mbit; supports 36-bit wide data bus for high-throughput memory subsystems. |
| Clock Frequency | 200 MHz (commercial); enables 5 ns clock cycle time for real-time packet buffering in telecom line cards. |
| Access Time | 3.1 ns clock-to-data (tCD); guarantees pipelined output valid on next rising clock edge after address latch. |
| Burst Mode | Four-word burst with programmable linear/interleaved order (LBO pin); eliminates address setup overhead per word in cache line fills. |
| Power Supply | VDD = 3.3 V ±5%, VDDQ = 3.3 V ±5%; separate core/I/O rails allow optimized noise isolation in mixed-signal SoC interfaces. |
| Temperature Range | –40°C to +85°C (industrial grade); qualified for deployment in outdoor base stations and industrial PLCs. |
| Package | 119-ball fine-pitch BGA (BGG); JEDEC MO-207AC compliant, 12 mm × 12 mm footprint with 0.8 mm pitch. |
Pinout & Package
71V35761SA200BGG is packaged in a 119-ball fine-pitch BGA (BGG) per JEDEC MO-207AC, with 12 mm × 12 mm body size and 0.8 mm ball pitch. Pin functions are defined for synchronous operation with clock-aligned inputs (CE, CS0, CS1, ADSP, ADSC, ADV, GW, BWE, BW1–BW4, CLK) and asynchronous controls (OE, LBO, ZZ, TMS/TDI/TCK/TRST/TDO).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A16 | Address Inputs | 17-bit synchronous address bus; latched on rising CLK edge when ADSP or ADSC is asserted low with CE low. |
| CS0, CS1, CE | Chip Select / Enable | Three-level hierarchical enable: CS0 (active HIGH), CS1 (active LOW), CE (active LOW); all must be valid for device selection. |
| GW, BWE, BW1–BW4 | Write Control Inputs | Global Write (GW) overrides byte enables; BWE gates BWx; each BWx selects one 9-bit byte (I/O0–7+I/OP1, etc.) for write masking. |
| ADV, ADSP, ADSC | Burst Address Control | ADV advances internal burst counter; ADSP (processor) and ADSC (cache controller) load address register synchronously on falling edge. |
| LBO, ZZ, OE | Asynchronous Controls | LBO selects burst order (LOW = linear); ZZ asserts sleep mode (HIGH = power-down); OE enables outputs asynchronously (LOW = drive). |
| TMS–TDO | JTAG Boundary Scan | IEEE 1149.1-compliant test interface; TRST optional; TDO is output-only; all JTAG pins have internal pull-ups except ZZ (pull-down). |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O | 36-bit bidirectional synchronous bus; registered input/output paths ensure deterministic timing alignment to CLK. |
| VDD, VDDQ, VSS | Power/Ground | VDD (core), VDDQ (I/O), and multiple VSS balls provide low-inductance decoupling; requires separate 3.3V supplies with ≤5% tolerance. |
Key Features
| Feature | Design Value |
|---|---|
| Pipelined Burst Outputs | First data word appears on next CLK edge after address latch; subsequent words follow on successive edges-enabling continuous 200 MHz throughput without wait states. |
| Single-Cycle Deselect | Device enters high-impedance state within one clock cycle of chip disable (CE/CS deassertion), preventing bus contention during rapid context switching. |
| Self-Timed Write Cycle | Internal timing logic determines write completion based on GW/BWE/BWx state at CLK edge-eliminating external write pulse width constraints. |
| JTAG Boundary Scan | Full IEEE 1149.1 compliance with TAP controller, enabling board-level interconnect testing and in-system programming verification. |
| Low-Power Sleep Mode | IZZ = 30 mA max at VDD = 3.465 V; ZZ HIGH gates internal clock and reduces dynamic power while retaining memory contents. |
Applications
| Network Processor Cache | Telecom Baseband Memory |
|---|---|
Use Scenario: High-bandwidth L2 cache for multi-core network processors handling 10Gbps packet classification and forwarding. IC Role / Device Role / Timing Role: Synchronous SRAM providing pipelined 36-bit burst reads/writes at 200MHz to match processor bus timing. Use Value: Single-cycle deselect and burst counter reduce average access latency by 60% vs. discrete address strobes, improving packet processing throughput. | Use Scenario: Shared memory buffer between DSP cores and FPGA accelerators in 4G/LTE baseband units. IC Role / Device Role / Timing Role: 128K × 36-bit memory with linear burst mode synchronized to DSP DMA clocks for contiguous FFT coefficient storage. Use Value: Separate VDD/VDDQ rails minimize digital switching noise coupling into analog RF sections, maintaining EVM performance. |
| Industrial PLC Data Buffer | Avionics Flight Control Memory |
Use Scenario: Real-time I/O data logging and deterministic control loop storage in ruggedized programmable logic controllers. IC Role / Device Role / Timing Role: Industrial-grade SRAM with –40°C to +85°C operation, used for cyclic process variable buffering with guaranteed data retention in sleep mode. Use Value: ZZ-controlled sleep mode cuts standby current to 30 mA, extending battery-backed runtime during maintenance windows. | Use Scenario: Fault-tolerant memory for flight control computer modules requiring DO-254 compliance and radiation-aware design. IC Role / Device Role / Timing Role: JTAG-enabled SRAM supporting boundary scan testing of memory interconnects and built-in self-test (BIST) integration. Use Value: IEEE 1149.1 test access allows in-flight diagnostics and post-deployment validation of memory bus integrity without physical probe access. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1362BV33-200BZXI | 128K × 32 organization; no JTAG; 200MHz, 3.3V; 165-ball fBGA (different pinout) | Supports 32-bit bus only; lacks burst order selection and boundary scan-unsuitable for JTAG-mandated avionics designs. | Select when 32-bit data width suffices and JTAG is not required; verify PCB layout compatibility due to different ball map. |
| AS7C33128P-20JCIN | 128K × 36; no pipelined outputs; 200MHz; 100-pin TQFP; no JTAG or ZZ sleep mode | Asynchronous output enable limits burst throughput; lacks low-power sleep and boundary scan-unsuitable for power-constrained or safety-critical systems. | Select for cost-sensitive commercial applications where TQFP assembly is preferred and sleep/JTAG are unnecessary. |
Compared with CY7C1362BV33-200BZXI and AS7C33128P-20JCIN, the 71V35761SA200BGG uniquely delivers 36-bit width, pipelined burst, JTAG testability, and ZZ sleep in a single industrial-grade BGA package-making it optimal for high-reliability, high-throughput embedded memory subsystems.
Availability
71V35761SA200BGG is available at Aetrix Electronics and suitable for network processor cache, telecom baseband memory, industrial PLC data buffering, and avionics flight control memory requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for 71V35761SA200BGG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
IDT (Integrated Device Technology) is a semiconductor company specializing in timing, memory interface, RF, and sensor solutions, now part of Renesas Electronics since 2019.
The 71V35761SA200BGG belongs to IDT's high-speed synchronous SRAM product line, designed specifically for demanding embedded applications requiring deterministic burst access, low-latency deselect, and robust testability in industrial and telecom infrastructure.
FAQ
What is the maximum operating frequency of the 71V35761SA200BGG?
The 71V35761SA200BGG is rated for 200 MHz operation under commercial conditions, delivering a 3.1 ns clock-to-data (tCD) access time. This frequency is validated across the full industrial temperature range (–40°C to +85°C) with VDD and VDDQ maintained at 3.3 V ±5%. The device also supports 183 MHz (3.3 ns) and 166 MHz (3.5 ns) speed grades for broader system timing margining.
Does the 71V35761SA200BGG support both linear and interleaved burst modes?
Yes, the 71V35761SA200BGG supports both linear and interleaved burst sequences via the LBO (Linear Burst Order) input pin. When LBO is driven LOW, the internal burst counter follows linear addressing (00→01→10→11); when HIGH, it uses interleaved order (00→01→11→10). LBO is asynchronous and must remain static during burst operation to prevent address sequence corruption.
What power-saving features does the 71V35761SA200BGG offer?
The 71V35761SA200BGG provides three distinct power states: active (IDD = 360 mA @ 200 MHz), CMOS standby (ISB1 = 30 mA), and full sleep (IZZ = 30 mA). Sleep mode is activated by asserting ZZ HIGH, which gates the internal clock and reduces dynamic power while guaranteeing data retention. The device exits sleep mode after tZZR = 100 ns upon ZZ deassertion.
Is JTAG boundary scan available on the 71V35761SA200BGG?
Yes, the 71V35761SA200BGG includes a fully compliant IEEE 1149.1 JTAG boundary scan interface with TMS, TDI, TCK, TDO, and optional TRST pins. This feature is enabled in the "SA" variant (as indicated by the "SA" in the part number) and supports board-level interconnect testing, in-system programming verification, and diagnostic access without requiring additional test fixtures.
What package type is used for the 71V35761SA200BGG?
The 71V35761SA200BGG is supplied in a 119-ball fine-pitch BGA (BGG) package per JEDEC MO-207AC, measuring 12 mm × 12 mm with 0.8 mm ball pitch. This package supports high-density routing and thermal performance required for telecom and industrial applications, and is distinct from the 100-pin TQFP and 165-ball fBGA variants in the same family.
71V35761SA200BGG Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 119-BGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 4.5Mbit
- Memory Organization:
- 128K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 200 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 3.1 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 119-PBGA (14x22)
71V35761SA200BGG FAQ
1.How can I place an order for 71V35761SA200BGG through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V35761SA200BGG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V35761SA200BGG reliable?
The price and inventory of 71V35761SA200BGG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V35761SA200BGG is usually 5 days.
3.What payment methods are accepted for 71V35761SA200BGG?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V35761SA200BGG transactions.
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4.How is shipping managed for 71V35761SA200BGG?
71V35761SA200BGG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V35761SA200BGG order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V35761SA200BGG?
For technical support, including 71V35761SA200BGG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V35761SA200BGG requirements.
6.How does Aetrix verify that 71V35761SA200BGG is sourced from the original manufacturer or authorized distributors?
All 71V35761SA200BGG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V35761SA200BGG meets industry standards.
7.What is the process for return or replacement of 71V35761SA200BGG?
All 71V35761SA200BGG units undergo pre-shipment inspection (PSI). If there is an issue with 71V35761SA200BGG, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V35761SA200BGG part is unused and in its original packaging.
Return procedure for 71V35761SA200BGG:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V35761SA200BGG Tags
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M24C02-WMN6TP
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AT24C02C-XHM-T
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AT21CS01-STUM10-T
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