Renesas 71V35761SA200BGG8

Overview

71V35761SA200BGG8 from IDT is a 128K × 36-bit, 3.3V synchronous SRAM with pipelined outputs, burst counter, and single-cycle deselect. It supports 200MHz operation (3.1ns clock access), features JTAG boundary scan (IEEE 1149.1), and operates across industrial temperature (–40°C to +85°C). Used in high-speed cache and networking buffers requiring deterministic latency and burst data throughput.

For engineers reviewing the 71V35761SA200BGG8 datasheet, 71V35761SA200BGG8 pinout, 71V35761SA200BGG8 application, or 71V35761SA200BGG8 equivalent, key selection criteria include burst mode timing (linear/interleaved), ZZ sleep mode current (30mA), 100-pin TQFP package compatibility, and JTAG testability for system-level validation.

Technical Context

This SRAM implements a synchronous interface with dual address status inputs (ADSP/ADSC) for processor- or cache-controller-driven burst initiation. Its internal 2-bit binary burst counter advances on ADV low and selects sequence order via LBO - linear (LBO = LOW) or interleaved (LBO = HIGH).

The device uses registered I/O paths: data input register, output register, and output buffer all clocked on CLK rising edge. Write control combines global (GW) and byte-level (BW1–BW4, BWE) enables, with self-timed write logic ensuring cycle completion without external timing constraints.

Key Specifications

Pinout & Package

Packaged in JEDEC-standard 119-ball BGA (BGG119), 14 mm × 20 mm footprint, RoHS-compliant, with 3.3V core and I/O supply pins distributed for low-noise power delivery.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1371DV33-200BZXI and AS7C33128P33A-200BIN, the 71V35761SA200BGG8 uniquely delivers JTAG testability, dual-address-status protocol, and configurable burst order - essential for high-reliability networking and compute applications demanding traceable validation and deterministic timing.

Availability

71V35761SA200BGG8 is available at Aetrix Electronics and suitable for network packet buffering, CPU cache extension, baseband signal processing, and industrial PLC memory modules requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for 71V35761SA200BGG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology) is a fabless semiconductor company specializing in high-performance timing, memory, and interface solutions, now part of Renesas Electronics.

The 71V35761SA200BGG8 belongs to IDT's high-speed synchronous SRAM product line, engineered for low-latency, burst-capable memory subsystems in communications infrastructure and real-time embedded systems.

FAQ

What is the maximum operating frequency of the 71V35761SA200BGG8?

The 71V35761SA200BGG8 is rated for 200 MHz operation in the commercial temperature range (0°C to +70°C), delivering a 3.1 ns clock-to-data access time (tCD). At 183 MHz and 166 MHz, it supports industrial temperature operation (–40°C to +85°C) with tCD of 3.3 ns and 3.5 ns respectively. These speeds are guaranteed across voltage (3.3 V ±5%) and temperature specifications.

Does the 71V35761SA200BGG8 support JTAG boundary scan, and which pins are used?

Yes, the 71V35761SA200BGG8 includes IEEE 1149.1-compliant JTAG boundary scan. The required pins are TMS (pin U5), TDI (U4), TCK (U6), TDO (U7), and optional TRST (U8), all located in the U-row of the 119-ball BGA (BGG119) package. These pins are dedicated and not shared with functional I/O.

How does burst mode work on the 71V35761SA200BGG8, and what controls the sequence order?

Burst mode on the 71V35761SA200BGG8 delivers four consecutive 36-bit words per address using an internal 2-bit binary counter. The LBO pin selects sequence order: LOW enables linear burst (00→01→10→11), HIGH enables interleaved burst (00→01→11→10). ADV must be held LOW to advance the counter; holding ADV HIGH suspends the burst after the current word.

What is the function of the ZZ pin on the 71V35761SA200BGG8, and how much power does it save?

The ZZ pin on the 71V35761SA200BGG8 enables full sleep mode when driven HIGH. In this state, internal clock gating reduces supply current to 30 mA max (IZZ), while retaining all memory contents. This is distinct from standby (ISB1 = 30 mA) and clock-running (ISB2 = 130 mA) modes, offering the lowest active-power state without data loss.

Can the 71V35761SA200BGG8 perform partial writes, and how are byte enables implemented?

Yes, the 71V35761SA200BGG8 supports partial writes via four independent 9-bit byte write enables (BW1–BW4), each controlling a 9-bit segment of the 36-bit bus (e.g., BW1 → I/O0–I/O7 + I/OP1). BWE must be LOW to activate BWx signals; when BWE is HIGH, only GW can initiate a write. This allows precise 1–4 byte updates without read-modify-write cycles.