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Renesas 71V35761SA200BQG
- Part No.:
- 71V35761SA200BQG
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 165-TBGA
- Datasheet:
-
71V35761SA200BQG.pdf
- Description:
- IC SRAM 4.5MBIT PAR 165CABGA
- Quantity:
- Payment:
- Shipping:
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Product details
Overview
71V35761SA200BQG from IDT is a 128K × 36-bit, 3.3V synchronous SRAM with pipelined outputs, burst counter, and single-cycle deselect. It supports 200MHz operation (3.1ns clock access), features JTAG boundary scan (IEEE 1149.1), and operates across industrial temperature (–40°C to +85°C). Used in high-speed cache and memory subsystems for network processors and telecom line cards.
For engineers reviewing the 71V35761SA200BQG datasheet, 71V35761SA200BQG pinout, 71V35761SA200BQG application, or 71V35761SA200BQG equivalent, key selection criteria include burst mode timing (linear/interleaved via LBO), self-timed write control (GW/BWE/BWx), sleep mode power management (ZZ input), and JEDEC-standard 165-ball fine-pitch BGA (BQG) packaging.
Technical Context
The 71V35761SA200BQG implements a synchronous, clock-driven architecture with registered address, data, and control paths. Its internal burst address counter generates four sequential addresses per initial address, with output pipelining delivering first data on the second clock edge and subsequent data on successive rising edges.
Burst order is selected by the asynchronous LBO pin (linear vs. interleaved), while ADV controls burst advance and ADSP/ADSC provide processor- or cache-controller-triggered address latching. JTAG TMS/TDI/TCK/TDO/TRST pins enable IEEE 1149.1-compliant test access in the SA variant.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 128K × 36 bits = 4.608 Mbit; supports 36-bit wide data bus interfaces without external width expansion. |
| Max Clock Frequency | 200 MHz (commercial); enables 5 ns cycle time for high-throughput burst reads/writes in real-time systems. |
| Access Time | 3.1 ns (tCD at 200 MHz); defines minimum clock-to-output delay for pipelined read cycles. |
| Supply Voltages | VDD = 3.3 V ±5% (core), VDDQ = 3.3 V ±5% (I/O); separate supplies allow I/O voltage stability during core switching. |
| Operating Temperature | –40°C to +85°C (industrial grade); qualified for deployment in base station, industrial control, and aerospace avionics environments. |
| Power Consumption | IDD = 360 mA max at 200 MHz; ISB2 = 130 mA (clock running standby); IZZ = 30 mA (full sleep); enables dynamic power scaling. |
| Burst Mode Control | LBO pin selects linear or interleaved 4-word burst sequence; ADV pin suspends or resumes burst incrementing. |
Pinout & Package
Packaged in a JEDEC-standard 165-ball fine-pitch ball grid array (fBGA), designated BQG. Pinout conforms to IDT's BG165 mechanical layout with dedicated VDD/VDDQ/VSS planes, 18 address inputs (A0–A17), 36 data I/Os (I/O0–I/O31 + I/OP1–I/OP4), and full JTAG interface (TMS/TDI/TCK/TRST/TDO).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | Synchronous address latching via ADSP/ADSC; supports 128K depth addressing with burst counter auto-increment. |
| CLK | System Clock Input | Single-edge-triggered master timing reference; all registers (address, data, control) sample on rising edge. |
| GW, BWE, BW1–BW4 | Write Control Inputs | GW enables full 36-bit writes; BWE gates byte write enables; BW1–BW4 select 9-bit byte lanes (I/O0–7/I/OP1, etc.). |
| ADV, ADSP, ADSC | Burst & Address Strobe | ADV advances internal burst counter; ADSP (processor) and ADSC (cache) trigger address register load synchronously with CE. |
| LBO | Burst Order Select | Asynchronous static input: LOW = linear burst, HIGH = interleaved burst; must remain stable during operation. |
| ZZ | Sleep Mode Enable | Asynchronous HIGH activates full sleep mode, gating internal clock and reducing current to 30 mA while retaining data. |
| TMS–TDO, TRST | JTAG Boundary Scan | IEEE 1149.1-compliant test interface; TRST is optional asynchronous reset; all signals are synchronous except TRST. |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O | 36-bit bidirectional bus with registered input and output paths; supports byte-write isolation and high-Z tri-state control via OE. |
Key Features
| Feature | Design Value |
|---|---|
| Pipelined Burst Outputs | First data appears on second clock edge; three additional words follow on successive edges - reduces average latency in burst-intensive applications. |
| Self-Timed Write Cycle | Internal timing logic eliminates need for external write pulse generation; supports GW-only, BWE-gated, or individual byte-write modes. |
| Single-Cycle Deselect | Chip deactivation completes within one clock cycle, enabling rapid context switching between memory banks or devices. |
| JTAG Boundary Scan (SA version) | Full IEEE 1149.1 compliance with TAP controller; enables board-level interconnect testing and in-system debug without physical probe access. |
| Linear/Interleaved Burst Selection | LBO pin configures burst address sequence to match CPU/cache controller expectations - critical for cache line alignment in RISC architectures. |
| Low-Power Sleep Mode | ZZ input reduces supply current to 30 mA while preserving data; recovery time (tZZR) is guaranteed ≤100 ns for fast wake-up. |
Applications
| Network Processor Cache | Telecom Line Card Buffer |
|---|---|
Use Scenario: High-bandwidth packet buffering and lookup table storage in multi-gigabit Ethernet switches. IC Role / Device Role / Timing Role: Primary burst-access SRAM serving as Level 2 cache for NPU cores; provides pipelined 36-bit reads at 200 MHz. Use Value: Single-cycle deselect and 3.1 ns tCD enable sub-5 ns average read latency across 4-word bursts, matching NPU pipeline depth. |
Use Scenario: Frame assembly/disassembly and header processing in OC-192/STM-64 optical transport equipment. IC Role / Device Role / Timing Role: Synchronous buffer between SerDes PHY and framer ASIC; handles variable-length ATM/SDH payloads with burst efficiency. Use Value: Linear burst mode (LBO = LOW) aligns with 32-byte cell boundaries; JTAG support enables field-upgradable firmware validation. |
| Industrial PLC Memory Module | Radar Signal Processing FIFO |
Use Scenario: Deterministic program/data storage in safety-critical programmable logic controllers operating at –40°C to +85°C. IC Role / Device Role / Timing Role: Industrial-grade SRAM providing non-volatile-equivalent reliability for ladder logic execution buffers. Use Value: Guaranteed data retention in ZZ sleep mode (30 mA, –40°C to +85°C) supports fail-safe state preservation during brownouts. |
Use Scenario: Real-time intermediate storage of digitized RF samples in airborne phased-array radar front ends. IC Role / Device Role / Timing Role: High-speed FIFO staging memory interfacing ADCs to DSPs; uses interleaved burst (LBO = HIGH) for cache-friendly access patterns. Use Value: 200 MHz clock rate sustains 7.2 GB/s aggregate bandwidth (36 bits × 200 MHz), meeting SAR imaging throughput requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1362BV33-200BZI | 128K × 32 organization; no JTAG; 200 MHz, 3.3V; 165-ball BGA but different pinout and burst control logic. | Lacks LBO-selectable burst order and JTAG; supports only linear burst; requires redesign of burst-handling firmware. | Select when JTAG testability is unnecessary and 32-bit data width suffices; verify ADV/ADSP timing compatibility. |
| AS7C3256B-20JCIN | 128K × 32, 3.3V; no pipelined outputs; 20 ns async access; 100-pin TQFP; no burst counter or ZZ sleep mode. | Asynchronous interface; no burst capability; higher access latency; unsuitable for pipelined processor interfaces. | Only consider for cost-sensitive, low-speed control-plane memory where burst performance and power gating are not required. |
Compared with CY7C1362BV33-200BZI and AS7C3256B-20JCIN, the 71V35761SA200BQG uniquely delivers JTAG testability, dual-burst-mode flexibility, and sub-4 ns pipelined access - making it the sole option for high-reliability, high-throughput embedded systems requiring both debug visibility and deterministic timing.
Availability
71V35761SA200BQG is available at Aetrix Electronics and suitable for network infrastructure, telecom line cards, and industrial control systems requiring stable component supply, long-term lifecycle support, and industrial-temperature qualification.
Supply support for 71V35761SA200BQG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
IDT (Integrated Device Technology) is a fabless semiconductor company specializing in high-performance timing, memory, and interface solutions for communications, computing, and industrial markets.
The 71V35761SA200BQG belongs to IDT's high-speed synchronous SRAM product line, engineered for low-latency, burst-capable memory subsystems in network processors, baseband units, and real-time embedded controllers.
FAQ
What is the maximum operating frequency and corresponding access time for the 71V35761SA200BQG?
The 71V35761SA200BQG is rated for 200 MHz operation in the commercial temperature range, with a guaranteed clock-to-data valid time (tCD) of 3.1 ns. This specification applies specifically to the 71V35761SA200BQG variant and reflects its pipelined output architecture - the first word of a burst appears after one full clock cycle plus pipeline delay.
Does the 71V35761SA200BQG support both linear and interleaved burst modes, and how is this controlled?
Yes, the 71V35761SA200BQG supports both linear and interleaved burst sequences via the LBO (Linear/Interleaved Burst Order) input pin. When LBO is driven LOW, the device executes linear burst addressing; when HIGH, it uses interleaved addressing. This configuration is static and must remain stable during active operation - the 71V35761SA200BQG does not support runtime burst mode switching.
What JTAG functionality does the 71V35761SA200BQG provide, and which pins are used?
The 71V35761SA200BQG implements full IEEE 1149.1 boundary scan with TMS, TDI, TCK, TDO, and optional TRST pins. These are assigned to specific balls in the 165-ball fBGA (BQG) package per IDT's BG165 pinout. The JTAG interface enables board-level interconnect testing and in-system programming verification - a capability absent in the non-SA variants of the 71V35761 family.
How does the 71V35761SA200BQG enter and exit sleep mode, and what is the power consumption in that state?
The 71V35761SA200BQG enters full sleep mode when the ZZ pin is driven HIGH, internally gating the clock and reducing supply current to 30 mA (max) while guaranteeing data retention. Recovery requires tZZR ≤ 100 ns after ZZ returns LOW. This behavior is confirmed for the 71V35761SA200BQG across its full industrial temperature range (–40°C to +85°C).
What package type and pin count does the 71V35761SA200BQG use, and is it RoHS compliant?
The 71V35761SA200BQG is packaged in a 165-ball fine-pitch ball grid array (fBGA) with JEDEC-standard footprint designation BQG. It is a green (RoHS-compliant) part, as confirmed in IDT's ordering information and environmental compliance documentation for the 71V35761SA series.
71V35761SA200BQG Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 165-TBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 4.5Mbit
- Memory Organization:
- 128K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 200 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 3.1 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-CABGA (13x15)
71V35761SA200BQG FAQ
1.How can I place an order for 71V35761SA200BQG through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V35761SA200BQG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V35761SA200BQG reliable?
The price and inventory of 71V35761SA200BQG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V35761SA200BQG is usually 5 days.
3.What payment methods are accepted for 71V35761SA200BQG?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V35761SA200BQG transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 71V35761SA200BQG?
71V35761SA200BQG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V35761SA200BQG order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V35761SA200BQG?
For technical support, including 71V35761SA200BQG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V35761SA200BQG requirements.
6.How does Aetrix verify that 71V35761SA200BQG is sourced from the original manufacturer or authorized distributors?
All 71V35761SA200BQG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V35761SA200BQG meets industry standards.
7.What is the process for return or replacement of 71V35761SA200BQG?
All 71V35761SA200BQG units undergo pre-shipment inspection (PSI). If there is an issue with 71V35761SA200BQG, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V35761SA200BQG part is unused and in its original packaging.
Return procedure for 71V35761SA200BQG:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V35761SA200BQG Tags
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M24C02-WMN6TP
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AT24C02C-XHM-T
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AT21CS01-STUM10-T
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24LC01BT-I/OT
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M24C02-FMC6TG
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AT24CS02-SSHM-T
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93LC46BT-I/OT
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AT24C04C-SSHM-T
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24LC01BT-I/SN
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