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Renesas 71V35761SA200BQG8
- Part No.:
- 71V35761SA200BQG8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 165-TBGA
- Datasheet:
-
71V35761SA200BQG8.pdf
- Description:
- IC SRAM 4.5MBIT PAR 165CABGA
- Quantity:
- Payment:
- Shipping:
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Product details
Overview
71V35761SA200BQG8 from IDT is a 128K × 36-bit, 3.3V synchronous SRAM with pipelined outputs, burst counter, and single-cycle deselect. It supports 200MHz operation (3.1ns clock access), operates over industrial temperature (–40°C to +85°C), and features JTAG boundary scan (IEEE 1149.1) in SA variant. Used in high-speed cache and networking buffers where deterministic latency and burst throughput are critical.
For engineers reviewing the 71V35761SA200BQG8 datasheet, 71V35761SA200BQG8 pinout, 71V35761SA200BQG8 application, or 71V35761SA200BQG8 equivalent, key selection considerations include its 100-pin TQFP package, synchronous burst read/write capability, ZZ-controlled sleep mode, LBO-configurable linear/interleaved burst order, and support for byte- and global-write operations under a single 3.3V core/I/O supply.
Technical Context
The 71V35761SA200BQG8 implements a synchronous pipelined architecture with registered address, data, and control inputs triggered on the rising edge of CLK. Its internal burst counter generates four consecutive 36-bit words per address, with output pipelining delivering first data one cycle after address latch and subsequent words on successive clock edges.
Burst sequencing is determined by the static LBO input (linear vs. interleaved), while ADV controls burst advance; ADSP/ADSC provide processor/cache-address status latching. The SA version integrates optional IEEE 1149.1 JTAG test logic with TMS/TDI/TCK/TRST/TDO pins enabled in BGA packages - confirmed for this BQG8 (165-ball fBGA) variant.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 128K × 36-bit = 4.608 Mbit; supports 36-bit parallel data path for wide-bus systems. |
| Max Clock Frequency | 200 MHz (commercial); enables 5 ns clock cycle time for high-throughput memory access. |
| Access Time | 3.1 ns clock-to-data (tCD); guarantees deterministic output timing for synchronous system timing closure. |
| Supply Voltage | 3.3 V ±5% for both core (VDD) and I/O (VDDQ); eliminates level-shifting in 3.3V logic domains. |
| Operating Temperature | –40°C to +85°C (industrial grade); validated for embedded telecom and industrial control environments. |
| Power Modes | Active (IDD = 360 mA @ 200 MHz), standby (ISB1 = 30 mA), full sleep (IZZ = 30 mA); enables dynamic power management. |
| Burst Control | LBO pin selects linear or interleaved 4-word burst sequence; ADV suspends burst increment for partial transfers. |
Pinout & Package
71V35761SA200BQG8 is packaged in a 165-ball fine-pitch ball grid array (fBGA), JEDEC-compliant BQG165 footprint (13 mm × 15 mm), with 3.3V-compatible I/Os and dedicated VDD/VDDQ/VSS balls for noise isolation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | 18-bit synchronous address bus; latched on rising CLK edge with ADSP/ADSC assertion. |
| CLK | System Clock Input | Single-ended clock reference; all registers and timing parameters referenced to rising edge. |
| GW, BWE, BW1–BW4 | Write Control Inputs | Global write (GW) enables full 36-bit writes; BWE + BWx enable selective 9-bit byte writes. |
| ADV, ADSP, ADSC | Burst & Address Status | ADV advances internal burst counter; ADSP/ADSC latch new addresses synchronously from processor/cache. |
| LBO | Burst Order Select | Asynchronous static input: LOW = linear burst, HIGH = interleaved burst; must remain stable during operation. |
| ZZ | Sleep Mode Enable | Asynchronous HIGH activates full sleep mode, gating internal clock and reducing current to 30 mA. |
| TMS, TDI, TCK, TDO, TRST | JTAG Boundary Scan | IEEE 1149.1-compliant test interface; TRST is optional asynchronous reset (internal pull-up). |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O | 36-bit bidirectional synchronous data bus; registered input/output paths ensure timing predictability. |
Key Features
| Feature | Design Value |
|---|---|
| Pipelined Burst Output | First data word appears one clock cycle after address latch; next three words follow on successive clocks - enabling continuous data streaming without inter-cycle gaps. |
| Single-Cycle Deselect | Chip deactivation completes within one clock cycle, eliminating bus contention and simplifying arbitration in multi-SRAM systems. |
| Configurable Burst Order | LBO pin allows runtime selection between linear (sequential A0/A1 increment) and interleaved (cache-friendly address mapping) burst sequences. |
| JTAG Boundary Scan (SA) | Integrated IEEE 1149.1 test logic supports board-level interconnect testing and in-system debugging without additional test hardware. |
| Self-Timed Write Cycle | Internal timing logic eliminates external write pulse generation; write completion is determined internally based on GW/BWE/BWx states at clock edge. |
Applications
| Network Packet Buffer | High-Performance Cache |
|---|---|
Use Scenario: Storing and forwarding variable-length Ethernet/IP packets in Layer 2/3 switches with strict latency budgets. IC Role / Device Role / Timing Role: Primary packet buffer SRAM; provides 36-bit-wide burst reads/writes synchronized to switch fabric clock. Use Value: 200MHz operation and pipelined outputs deliver sustained 7.2 Gbps throughput; single-cycle deselect prevents packet loss during rapid context switching. | Use Scenario: Second-level (L2) cache for RISC-V or ARM-based SoCs requiring low-latency, wide-bus memory access. IC Role / Device Role / Timing Role: Synchronous cache tag/data array; interfaces directly to CPU bus with ADSP/ADSC handshake signals. Use Value: Linear burst mode matches sequential instruction fetch patterns; 3.1ns tCD ensures sub-5ns read latency critical for CPI optimization. |
| Telecom Baseband Processing | Industrial Real-Time Controller |
Use Scenario: Frame buffering in 4G/5G baseband units handling OFDM symbol processing across multiple antenna channels. IC Role / Device Role / Timing Role: Shared memory buffer between DSP cores and FPGA accelerators; accessed via burst-aligned DMA channels. Use Value: Interleaved burst mode aligns with FFT/IFFT memory access patterns; industrial temp rating ensures reliability in outdoor cabinet deployments. | Use Scenario: Deterministic I/O mapping and motion control trajectory storage in CNC and robotics controllers. IC Role / Device Role / Timing Role: Real-time shared memory for PLC logic execution and servo feedback loop buffering. Use Value: ZZ sleep mode reduces power during idle cycles without losing data; 3.3V-only supply simplifies power design in isolated industrial modules. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1362BV33-200BZXI | 128K × 36, 3.3V, 200MHz; no JTAG; uses different burst control (BWS# instead of ADV/LBO); 119-ball BGA only. | Lacks IEEE 1149.1 test interface; requires redesign of burst sequencing logic and PCB layout due to incompatible pinout and control scheme. | Select when JTAG is unnecessary and BGA-only integration is acceptable; verify ADV/LBO replacement with BWS# timing. |
| AS7C33128PFS-200BIN | 128K × 36, 3.3V, 200MHz; no pipelined outputs; asynchronous OE; no ZZ sleep or JTAG; 100-pin TQFP only. | Higher read latency (no pipelining); no low-power sleep mode; lacks burst suspend (ADV) and boundary scan - limiting use in power-constrained or test-critical designs. | Consider only for cost-sensitive, non-pipelined legacy systems where JTAG and sleep are not required. |
Compared with CY7C1362BV33-200BZXI and AS7C33128PFS-200BIN, the 71V35761SA200BQG8 uniquely combines pipelined burst I/O, JTAG testability, and ZZ sleep in a 165-ball fBGA - making it optimal for new high-reliability, high-throughput embedded designs requiring debug visibility and dynamic power control.
Availability
71V35761SA200BQG8 is available at Aetrix Electronics and suitable for network packet buffering, real-time industrial control, telecom baseband processing, and high-performance cache subsystems requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for 71V35761SA200BQG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
IDT (Integrated Device Technology), now part of Renesas Electronics, is a semiconductor company specializing in high-performance timing, memory, and interface solutions for communications, computing, and industrial markets.
The 71V35761SA200BQG8 belongs to IDT's high-speed synchronous SRAM product line, designed specifically for applications demanding deterministic latency, burst bandwidth, and robust testability in mission-critical embedded systems.
FAQ
What is the operating temperature range for the 71V35761SA200BQG8?
The 71V35761SA200BQG8 is rated for industrial temperature operation from –40°C to +85°C. This specification is validated across all electrical parameters including access time (3.1 ns at 200 MHz), power consumption (IDD = 360 mA), and sleep mode current (IZZ = 30 mA), ensuring reliable performance in harsh environments such as outdoor telecom equipment and factory automation controllers.
Does the 71V35761SA200BQG8 support JTAG boundary scan?
Yes, the 71V35761SA200BQG8 (SA variant) includes IEEE 1149.1-compliant JTAG boundary scan functionality. Pins TMS, TDI, TCK, TDO, and optional TRST are assigned in the 165-ball fBGA (BQG165) package. TRST has an internal pull-up and may be left floating if unused. JTAG is not present in the 'S' version - only the 'SA' suffix confirms inclusion.
How does burst mode work on the 71V35761SA200BQG8?
The 71V35761SA200BQG8 supports 4-word synchronous burst mode initiated by ADV = LOW. After the first address is latched (via ADSP/ADSC), the internal counter generates three subsequent addresses. LBO selects linear (LBO = LOW) or interleaved (LBO = HIGH) order. Each output word is pipelined - O1 appears one clock after address latch; O2–O4 follow on the next three rising CLK edges.
What is the function of the ZZ pin on the 71V35761SA200BQG8?
The ZZ pin on the 71V35761SA200BQG8 is an asynchronous sleep mode enable. When driven HIGH, it gates the internal clock and reduces supply current to 30 mA (IZZ) while maintaining full data retention. Recovery requires tZZR ≥ 100 ns after ZZ returns LOW. ZZ has an internal pull-down, so it defaults to active mode if left unconnected.
What package type is used for the 71V35761SA200BQG8?
The 71V35761SA200BQG8 uses a 165-ball fine-pitch ball grid array (fBGA) package, JEDEC-compliant BQG165 footprint (13 mm × 15 mm). This differs from the 100-pin TQFP (PKG100) and 119-ball BGA (BG119) variants. Pin assignments for JTAG, ZZ, and burst controls are specific to the BQG165 layout and documented in the "Pin Configuration(6)" section of the datasheet.
71V35761SA200BQG8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 165-TBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 4.5Mbit
- Memory Organization:
- 128K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 200 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 3.1 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-CABGA (13x15)
71V35761SA200BQG8 FAQ
1.How can I place an order for 71V35761SA200BQG8 through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V35761SA200BQG8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V35761SA200BQG8 reliable?
The price and inventory of 71V35761SA200BQG8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V35761SA200BQG8 is usually 5 days.
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71V35761SA200BQG8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V35761SA200BQG8 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V35761SA200BQG8?
For technical support, including 71V35761SA200BQG8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V35761SA200BQG8 requirements.
6.How does Aetrix verify that 71V35761SA200BQG8 is sourced from the original manufacturer or authorized distributors?
All 71V35761SA200BQG8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V35761SA200BQG8 meets industry standards.
7.What is the process for return or replacement of 71V35761SA200BQG8?
All 71V35761SA200BQG8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V35761SA200BQG8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V35761SA200BQG8 part is unused and in its original packaging.
Return procedure for 71V35761SA200BQG8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V35761SA200BQG8 Tags
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