Renesas 71V3576S133PFG

Overview

71V3576S133PFG from IDT is a 128K × 36-bit, 3.3V synchronous SRAM with pipelined outputs, burst counter, and single-cycle deselect. It operates at 133MHz (4.2ns clock access time), supports linear/interleaved burst modes via LBO input, and features global write (GW), byte write enables (BW1–BW4), and sleep mode (ZZ). Used in high-speed cache and buffer applications in networking and telecom line cards.

For engineers reviewing the 71V3576S133PFG datasheet, 71V3576S133PFG pinout, 71V3576S133PFG application, or 71V3576S133PFG equivalent, key selection criteria include burst-mode timing compliance, 100-pin TQFP footprint compatibility, industrial-grade temperature support (–40°C to +85°C), and 3.3V core/I/O supply requirements.

Technical Context

The 71V3576S133PFG implements a synchronous, clock-driven architecture with registered address, data, and control inputs. Its internal burst counter advances on ADV=LOW and selects sequence order via LBO (linear or interleaved), enabling four-word burst reads/writes per address cycle.

It uses self-timed write logic gated by GW, BWE, and BWx signals, with pipelined output registers delivering data one clock cycle after CLK rising edge. Power management includes asynchronous ZZ-controlled sleep mode (IZZ ≤ 35mA) and CMOS standby (ISB1 ≤ 35mA).

Key Specifications

Pinout & Package

71V3576S133PFG is packaged in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body size, with 0.5 mm pitch. Pin 1 identifier located at top-left corner (counterclockwise numbering).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1371D-133AXC and R1EX24064AS0C0I#U0, the 71V3576S133PFG uniquely delivers 36-bit width with integrated parity I/O, pipelined burst timing, and synchronous power-down - making it irreplaceable in new designs requiring deterministic 133MHz cache or buffer performance with industrial temperature resilience.

Availability

71V3576S133PFG is available at Aetrix Electronics and suitable for network line card buffering, high-speed cache memory, industrial PLC data logging, and avionics sensor interface buffer applications requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for 71V3576S133PFG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, is a fabless semiconductor company specializing in high-performance timing, memory, and interface solutions for communications, computing, and industrial markets.

The 71V3576S133PFG belongs to IDT's pipelined burst synchronous SRAM product line, engineered specifically for low-latency, high-throughput buffering in telecom infrastructure, military/aerospace systems, and real-time industrial controllers.

FAQ

What is the maximum operating frequency supported by the 71V3576S133PFG?

The 71V3576S133PFG is rated for 133 MHz operation, with a guaranteed minimum clock cycle time (tCYC) of 7.5 ns. This speed is validated across the full industrial temperature range (–40°C to +85°C) and 3.3V ±5% supply conditions. The device does not support 150 MHz operation - that speed grade corresponds to the 71V3576S150PFG variant.

Does the 71V3576S133PFG support both linear and interleaved burst modes?

Yes, the 71V3576S133PFG supports both burst modes via the LBO (Linear Burst Order) input pin. When LBO is driven LOW, the device executes linear burst addressing; when LBO is HIGH, it uses interleaved burst order. The LBO signal is static and must remain stable during active operation to prevent burst sequence corruption.

How many byte write enable signals does the 71V3576S133PFG provide, and what is their function?

The 71V3576S133PFG provides four individual byte write enable signals (BW1–BW4), each controlling a 9-bit segment of the 36-bit data bus (plus 4 parity bits on I/OP1–I/OP4). When enabled with BWE LOW, these allow selective writing of any combination of 9-bit bytes without affecting other bytes - essential for efficient partial-word updates in protocol processing.

What is the purpose of the ZZ pin on the 71V3576S133PFG, and how does it affect power consumption?

The ZZ pin on the 71V3576S133PFG controls asynchronous entry into full sleep mode. When ZZ is driven HIGH, the internal clock is gated and supply current drops to ≤35 mA (IZZ), while memory contents are retained. This mode eliminates dynamic power draw and is ideal for idle periods in power-constrained telecom or avionics subsystems.

Is the 71V3576S133PFG pin-compatible with the 71V3578S133PFG?

No, the 71V3576S133PFG (128K × 36) and 71V3578S133PFG (256K × 18) are not pin-compatible. Although both use 100-pin TQFP packages, their pinouts differ significantly - notably in address pin count (A0–A16 vs. A0–A17), byte write enable allocation (BW3/BW4 present only on 71V3576), and NC pin placement. PCB layout must be redesigned for interchange.