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Renesas 71V3576S133PFGI

Part No.:
71V3576S133PFGI
Manufacturer:
Renesas
Category:
Memory
Package:
100-LQFP
Datasheet:
Aetrix71V3576S133PFGI.pdf
Description:
IC SRAM 4.5MBIT PARALLEL 100TQFP
Quantity:
Payment:
Payment
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Inventory:3,326

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Product details

Overview

71V3576S133PFGI from IDT is a 128K × 36-bit, 3.3V synchronous SRAM with pipelined outputs, burst counter, and single-cycle deselect. It operates at 133MHz (4.2ns clock access time), supports linear/interleaved burst modes via LBO input, and features global write (GW), byte write enables (BW1–BW4), and sleep mode (ZZ). Used in high-speed cache and networking buffers requiring deterministic timing and low-latency data access.

For engineers reviewing the 71V3576S133PFGI datasheet, 71V3576S133PFGI pinout, 71V3576S133PFGI application, or 71V3576S133PFGI equivalent, key selection criteria include burst-mode compatibility, 100-pin TQFP footprint, industrial temperature support (−40°C to +85°C), and pipelined read timing with tCD = 4.2ns.

Technical Context

This SRAM implements a synchronous interface with registered address, control, and data paths triggered on the rising edge of CLK. Its internal burst counter generates four consecutive addresses from a single input, with sequence order determined by the static LBO pin state-linear (LBO = LOW) or interleaved (LBO = HIGH).

Write operations support multiple configurations: global write (GW active), byte-select writes (BWE + BW1–BW4), or self-timed cycles gated by ADSP/ADSC. Power management includes asynchronous ZZ-controlled sleep mode (IZZ ≤ 35mA) and CMOS standby (ISB1 ≤ 35mA), both compatible with industrial-grade voltage tolerances (VDD/VDDQ = 3.3V ±5%).

Key Specifications

Parameter Value and Actual Design Meaning
Memory Organization128K × 36-bit (4.608 Mbit); supports 36-bit wide data path for high-bandwidth buffering
Clock Frequency133 MHz; enables system-level timing alignment with 7.5 ns clock cycle (tCYC)
Access Time4.2 ns clock-to-data (tCD); guarantees pipelined output validity within one clock cycle after CLK rise
Supply VoltageVDD = VDDQ = 3.3 V ±5%; dual-rail design isolates core logic (VDD) from I/O drivers (VDDQ)
Operating Temperature−40°C to +85°C (Industrial grade); validated for extended thermal stability in embedded infrastructure
Power DissipationIDD = 250–260 mA (133 MHz, Industrial); ISB1 = 30–35 mA (standby); IZZ = 30–35 mA (sleep mode)
Package100-pin TQFP (14 mm × 20 mm, JEDEC standard); surface-mount compatible with automated assembly

Pinout & Package

71V3576S133PFGI is packaged in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body size, with 0.5 mm lead pitch. Pin 1 is located at top-left corner (notch-marked side), and pin numbering proceeds counterclockwise.

Pin/Terminal Circuit Role Design Meaning
A0–A17Address InputsSynchronous inputs latched on rising CLK edge with ADSP/ADSC; A0–A16 used for 128K×36 addressing
CLKClock InputPrimary timing reference; all synchronous registers triggered on rising edge
CE, CS0, CS1Chip Enable / SelectsThree-level chip select hierarchy (CE active LOW, CS0 active HIGH, CS1 active LOW) for multi-device decoding
GW, BWE, BW1–BW4Write Control InputsGW enables full 36-bit write; BWE gates BWx; BW1–BW4 each control one 9-bit byte (I/O0–7/I/OP1, etc.)
ADV, ADSP, ADSC, LBOBurst & Address ControlADV advances burst counter; ADSP/ADSC load address register; LBO selects linear/interleaved burst order (static)
OEOutput EnableAsynchronous control; drives I/O pins to high-Z when HIGH, enabling bus sharing
ZZSleep Mode InputAsynchronous HIGH activates sleep mode; internally pulled down; reduces current to ≤35 mA
I/O0–I/O31, I/OP1–I/OP4Data I/O36-bit bidirectional synchronous data bus; registered input/output paths ensure timing predictability
VDD, VDDQ, VSSPower & GroundVDD (core), VDDQ (I/O), and VSS (common ground) require separate decoupling per JEDEC layout guidelines

Key Features

Feature Design Value
Pipelined Burst ReadDelivers four consecutive data words on successive CLK edges after initial address; eliminates wait states in cache-line fills
Single-Cycle DeselectDevice enters high-impedance state within one clock cycle upon chip disable, preventing bus contention during arbitration
Configurable Burst OrderLBO pin statically selects linear (sequential) or interleaved (cache-friendly) address sequence without firmware overhead
Self-Timed Write CycleInternal timing logic completes writes without external strobe extension; supports GW, BWE, and individual BWx control
Industrial Temperature SupportValidated operation from −40°C to +85°C with full AC/DC specifications maintained across range
Green PackagingLead-free, RoHS-compliant TQFP package (PFG suffix); meets environmental compliance for industrial deployments

Applications

Network Packet Buffering High-Performance Cache Memory

Use Scenario: Storing ingress/egress packet headers and payloads in Layer 2/3 switches with line-rate throughput requirements.

IC Role / Device Role / Timing Role: Synchronous SRAM acting as first-level packet buffer with deterministic 4.2ns read latency and burst-aligned data delivery.

Use Value: Enables zero-drop forwarding at 133MHz system clock; pipelined burst satisfies 4-word cache-line fetches without pipeline stalls.

Use Scenario: Serving as instruction/data cache for RISC-based network processors or DSPs in telecom baseband units.

IC Role / Device Role / Timing Role: Low-latency memory providing 36-bit-wide instruction fetches with single-cycle deselect for context switching.

Use Value: Linear burst mode matches sequential instruction flow; industrial temp rating ensures reliability in uncooled outdoor cabinets.

Industrial PLC Data Logging Medical Imaging Frame Buffer

Use Scenario: Capturing real-time sensor telemetry in programmable logic controllers with deterministic scan-cycle timing.

IC Role / Device Role / Timing Role: High-reliability SRAM storing timestamped analog/digital I/O snapshots synchronized to system clock.

Use Value: ZZ sleep mode reduces power during idle intervals; −40°C to +85°C rating supports deployment in factory-floor enclosures.

Use Scenario: Holding uncompressed DICOM image frames (e.g., 1024×1024×16-bit) during real-time ultrasound or MRI reconstruction.

IC Role / Device Role / Timing Role: Burst-capable buffer feeding pixel data to FPGA-based image processors at consistent 133MHz bandwidth.

Use Value: 128K×36 organization maps efficiently to 16-bit pixel streams; pipelined outputs prevent frame-buffer underflow artifacts.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
CY7C1370D-133AXC128K × 32-bit, 3.3V, 133MHz; no LBO or ADV; uses standard asynchronous OE timingLacks burst counter and configurable burst order; requires external address sequencing logicSelect when burst functionality is unnecessary and 32-bit width suffices; lower pin count (100-pin TQFP same footprint)
AS7C3128P-133JCIN128K × 32-bit, 3.3V, 133MHz; supports linear burst only; no ZZ sleep modeMissing interleaved burst and sleep mode; higher standby current (ISB1 = 60mA vs. 35mA)Choose for cost-sensitive industrial designs where sleep mode and dual-burst mode are not required

Compared with CY7C1370D-133AXC and AS7C3128P-133JCIN, the 71V3576S133PFGI delivers unique value through its hardware-configurable burst order (LBO), integrated sleep mode (ZZ), and true single-cycle deselect-critical for real-time systems requiring deterministic bus release and low-power idle states.

Availability

71V3576S133PFGI is available at Aetrix Electronics and suitable for network packet buffering, high-performance cache memory, industrial PLC data logging, and medical imaging frame buffer applications requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for 71V3576S133PFGI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology) is a fabless semiconductor company specializing in high-performance timing, memory, and interface solutions for communications, computing, and industrial markets.

The 71V3576S133PFGI belongs to IDT's pipelined burst synchronous SRAM product line, designed specifically for applications demanding predictable low-latency memory access, burst efficiency, and robust industrial-grade reliability.

FAQ

What is the memory organization and data bus width of the 71V3576S133PFGI?

The 71V3576S133PFGI is organized as 128K × 36 bits (4.608 Mbit), providing a native 36-bit data bus. This configuration supports efficient 32-bit + parity or four independent 9-bit byte lanes, directly matching common bus architectures in networking and industrial controllers. The device does not support 256K × 18 mode - that is exclusive to the 71V3578 family variant.

How does the LBO pin affect burst behavior in the 71V3576S133PFGI?

The LBO (Linear Burst Order) pin on the 71V3576S133PFGI is a static input that determines burst address sequence: when pulled LOW, it selects linear burst (00→01→10→11); when pulled HIGH, it selects interleaved burst (00→01→11→10). LBO must remain stable during operation - changing it mid-burst causes undefined address generation. Internal pull-up ensures default interleaved mode if left unconnected.

Does the 71V3576S133PFGI support both global and byte-level write operations?

Yes, the 71V3576S133PFGI supports three write modes: global write (GW active), byte write enable (BWE active + BW1–BW4), and individual byte writes (BW1–BW4 active with BWE HIGH). Each BWx controls a 9-bit segment: BW1 → I/O0–7 + I/OP1, BW2 → I/O8–15 + I/OP2, etc. All outputs are disabled during any write cycle, ensuring clean bus transitions.

What is the role of the ZZ pin, and how does it impact power consumption in the 71V3576S133PFGI?

The ZZ pin on the 71V3576S133PFGI is an asynchronous input that places the device into full sleep mode when driven HIGH. In this state, internal clocks are gated, and supply current drops to ≤35 mA (IZZ) - matching standby current (ISB1). Data retention is guaranteed. ZZ has an internal pull-down, so leaving it unconnected maintains active operation. Recovery time (tZZR) is 100 ns.

Is the 71V3576S133PFGI pin-compatible with other devices in the IDT71V3576/78 family?

The 71V3576S133PFGI shares the same 100-pin TQFP (PKG100) footprint and pinout with all speed/temp variants of the 71V3576 family (e.g., 71V3576S150PFGI), but is not pin-compatible with the 71V3578 family - which substitutes NC pins for BW3/BW4 and reassigns A15/A16 for 256K×18 addressing. Always verify pin function tables before substitution.

71V3576S133PFGI Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
100-LQFP
Packaging:
Tray
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, SDR
Memory Size:
4.5Mbit
Memory Organization:
128K x 36
Memory Interface:
Parallel
Clock Frequency:
133 MHz
Write Cycle Time - Word, Page:
-
Access Time:
4.2 ns
Voltage - Supply:
3.135V ~ 3.465V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
100-TQFP (14x14)

71V3576S133PFGI FAQ

1.How can I place an order for 71V3576S133PFGI through Aetrix?

Please submit a Request for Quotation (RFQ) for 71V3576S133PFGI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 71V3576S133PFGI reliable?

The price and inventory of 71V3576S133PFGI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V3576S133PFGI is usually 5 days.

3.What payment methods are accepted for 71V3576S133PFGI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V3576S133PFGI transactions.

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71V3576S133PFGI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 71V3576S133PFGI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 71V3576S133PFGI?

For technical support, including 71V3576S133PFGI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V3576S133PFGI requirements.

6.How does Aetrix verify that 71V3576S133PFGI is sourced from the original manufacturer or authorized distributors?

All 71V3576S133PFGI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V3576S133PFGI meets industry standards.

7.What is the process for return or replacement of 71V3576S133PFGI?

All 71V3576S133PFGI units undergo pre-shipment inspection (PSI). If there is an issue with 71V3576S133PFGI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 71V3576S133PFGI part is unused and in its original packaging.

Return procedure for 71V3576S133PFGI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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