Renesas 71V3576S133PFGI8

Overview

71V3576S133PFGI8 from IDT is a 128K × 36-bit, 3.3V synchronous SRAM with pipelined outputs, burst counter, and single-cycle deselect. It operates at 133MHz (4.2ns clock access time), supports linear/interleaved burst modes via LBO input, and features global write (GW), byte write enables (BW1–BW4), and sleep mode (ZZ). Used in high-speed cache and networking buffers requiring deterministic timing.

For engineers reviewing the 71V3576S133PFGI8 datasheet, 71V3576S133PFGI8 pinout, 71V3576S133PFGI8 application, or 71V3576S133PFGI8 equivalent, key selection criteria include burst-mode latency, 100-pin TQFP package compatibility, industrial temperature support (–40°C to +85°C), and pipelined read timing with tCD = 4.2ns.

Technical Context

This SRAM implements a synchronous, clock-driven architecture with registered address, data, and control inputs. Its burst logic uses an internal binary counter gated by ADV and configured by LBO to generate four sequential addresses per initial access-enabling high-bandwidth data streaming without external address generation.

The device integrates separate core (VDD) and I/O (VDDQ) power domains, supports self-timed writes via GW/BWE/BWx hierarchy, and provides asynchronous sleep entry via ZZ. Pipelined output registers deliver data one clock cycle after the rising CLK edge, ensuring predictable timing for high-frequency bus interfacing.

Key Specifications

Pinout & Package

Packaged in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body size, with 0.5 mm pitch. Pin 1 marked by corner cut; pins 14 (VDD/NC) and 64 (ZZ control) have specific biasing options per datasheet.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1362BV133BZC and AS7C3256P-133JCIN, the 71V3576S133PFGI8 uniquely combines industrial temperature support, dual-address-status inputs (ADSP/ADSC), configurable burst order (LBO), and guaranteed 4.2 ns tCD - making it optimal for cache-coherent and telecom infrastructure designs demanding timing precision and flexibility.

Availability

71V3576S133PFGI8 is available at Aetrix Electronics and suitable for network packet buffering, high-speed cache controller interfaces, and industrial PLC data log buffers requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for 71V3576S133PFGI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology) is a fabless semiconductor company specializing in high-performance timing, memory, and interface solutions for communications, computing, and industrial markets.

The 71V3576S133PFGI8 belongs to IDT's pipelined burst synchronous SRAM product line, designed specifically for low-latency, high-bandwidth data buffering in cache hierarchies and packet-switching fabric applications.

FAQ

What is the memory organization and operating voltage of the 71V3576S133PFGI8?

The 71V3576S133PFGI8 is organized as 128K × 36 bits (4.608 Mbit) and operates from two 3.3 V supplies: VDD = 3.3 V ±5% for the core logic and VDDQ = 3.3 V ±5% for the I/O interface. This dual-supply architecture isolates switching noise and ensures signal integrity on the 36-bit data bus.

Does the 71V3576S133PFGI8 support both linear and interleaved burst modes?

Yes, the 71V3576S133PFGI8 supports both burst modes via the LBO (Linear Burst Order) pin. When LBO is driven LOW, the device executes linear burst addressing; when LBO is HIGH, it performs interleaved burst. The LBO input is asynchronous and must remain static during active operation.

What is the maximum clock frequency and corresponding access time for the 71V3576S133PFGI8?

The 71V3576S133PFGI8 is rated for 133 MHz operation, with a guaranteed maximum clock-to-output delay (tCD) of 4.2 ns under industrial conditions. Its minimum clock cycle time (tCYC) is 7.5 ns, enabling reliable synchronization in high-speed bus interfaces.

How does the 71V3576S133PFGI8 handle power management in low-power applications?

The 71V3576S133PFGI8 implements three power states: active (IDD = 250 mA max), clock-running standby (ISB2 = 100 mA max), and full sleep (IZZ = 30 mA max). Sleep mode is entered asynchronously via the ZZ pin and retains full data retention across the full –40°C to +85°C range.

What package type and pin count does the 71V3576S133PFGI8 use?

The 71V3576S133PFGI8 is housed in a 100-pin plastic thin quad flatpack (TQFP) per JEDEC standard PKG100, measuring 14 mm × 20 mm with 0.5 mm lead pitch. Pin 1 is identified by a corner cut, and pins 14 (VDD/NC) and 64 (ZZ) have defined biasing options per the datasheet.