Renesas 71V3576S150PFG

Overview

71V3576S150PFG from IDT is a 128K × 36-bit, 3.3V synchronous SRAM with pipelined outputs, burst counter, and single-cycle deselect. It operates at 150 MHz (3.8 ns clock access time), supports linear/interleaved burst modes via LBO input, and features global write (GW), byte write enables (BW1–BW4), and sleep mode (ZZ). Used in high-speed cache and networking buffers requiring deterministic latency.

For engineers reviewing the 71V3576S150PFG datasheet, 71V3576S150PFG pinout, 71V3576S150PFG application, or 71V3576S150PFG equivalent, key selection criteria include burst-mode timing compliance, 100-pin TQFP footprint compatibility, industrial-grade thermal margin (–40°C to +85°C option), and pipelined read/write cycle coordination with ADSP/ADSC address status signals.

Technical Context

The 71V3576S150PFG implements a synchronous, clock-driven architecture with registered address, data, and control paths. Its internal burst counter advances on ADV=LOW and selects sequence order (linear or interleaved) based on static LBO state-no runtime reconfiguration. All inputs except OE and ZZ are synchronous to CLK rising edge, with setup/hold times defined down to 1.5 ns.

Write operations support four distinct modes: global (GW), byte-select (BWE + BWx), self-timed execution, and pipelined output enable. Power management includes three states: active (IDD = 295 mA @ 150 MHz), standby (ISB1 = 30 mA), and full sleep (IZZ = 30 mA), all controlled without external sequencing.

Key Specifications

Pinout & Package

71V3576S150PFG is housed in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body, 0.5 mm lead pitch. Pin 1 identifier is marked by dot or beveled corner; pin 1 is located at top-left when notch faces up.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1371DV18-167BZC and AS7C31026B-15JCIN, the 71V3576S150PFG uniquely delivers 128K×36 burst-pipelined operation in a drop-in-compatible 100-pin TQFP, enabling direct integration into cache-coherent bus architectures without bus-width translation or timing redesign.

Availability

71V3576S150PFG is available at Aetrix Electronics and suitable for network packet buffering, CPU cache subsystems, baseband signal processing, and industrial data logging requiring stable component supply and commercial-temperature performance.

Supply support for 71V3576S150PFG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology) is a fabless semiconductor company specializing in high-performance memory, timing, and RF solutions, now part of Renesas Electronics since 2019.

The 71V3576S150PFG belongs to IDT's pipelined burst synchronous SRAM product line, engineered for deterministic low-latency memory access in cache, networking, and digital signal processing systems where burst efficiency and timing predictability are critical.

FAQ

What is the maximum supported clock frequency for the 71V3576S150PFG?

The 71V3576S150PFG is rated for a maximum clock frequency of 150 MHz, corresponding to a minimum clock cycle time (tCYC) of 6.7 ns. This speed grade is validated across the commercial temperature range (0°C to +70°C) and is guaranteed by production AC testing per datasheet table 16. Operation above 150 MHz is not characterized and may result in timing violations or data corruption.

Does the 71V3576S150PFG support both linear and interleaved burst modes?

Yes, the 71V3576S150PFG supports both linear and interleaved burst sequences via the LBO (Linear Burst Order) pin. When LBO is driven LOW, the device executes linear burst addressing (00→01→10→11); when LBO is HIGH, it uses interleaved order (00→01→11→10). LBO is asynchronous and must remain static during burst operation to prevent undefined address sequencing.

How does the 71V3576S150PFG handle power-down and sleep modes?

The 71V3576S150PFG implements two low-power states: standby (ISB1 = 30 mA) when deselected, and full sleep (IZZ = 30 mA) when ZZ is driven HIGH. In sleep mode, the internal clock is gated and core logic is powered down while retaining data. Recovery time (tZZR) is 100 ns, and the device must be deselected before entering sleep mode per datasheet requirement.

What is the function of the ADSP and ADSC pins on the 71V3576S150PFG?

ADSP (Address Status from Processor) and ADSC (Address Status from Cache Controller) are synchronous inputs that load the internal address register on their falling edge when CE is LOW. Both serve identical functions for read cycles and are interchangeable; ADSP is typically used in CPU-connected configurations, while ADSC supports cache-coherent systems. Neither pin affects write timing - GW/BWE/BWx control write initiation.

Can the 71V3576S150PFG be used in industrial temperature applications?

The 71V3576S150PFG itself is specified for commercial temperature (0°C to +70°C). However, the same die is offered in industrial grade as 71V3576S150PFGI (–40°C to +85°C), which shares identical electrical specifications, pinout, and timing. For industrial deployment, specify the PFGI variant - the PFG suffix alone denotes commercial grade and is not qualified for extended temperature operation.