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Renesas 71V3576S150PFG8
- Part No.:
- 71V3576S150PFG8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 100-LQFP
- Datasheet:
-
71V3576S150PFG8.pdf
- Description:
- IC SRAM 4.5MBIT PARALLEL 100TQFP
- Quantity:
- Payment:
- Shipping:
Inventory:3,390
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Product details
Overview
71V3576S150PFG8 from IDT is a 128K × 36-bit, 3.3V synchronous SRAM with pipelined outputs, burst counter, and single-cycle deselect. It operates at 150 MHz (3.8 ns clock access time), supports linear/interleaved burst modes via LBO input, and features global/byte write control (GW/BWE/BW1–BW4) for precise data management in high-speed cache or buffer applications.
For engineers reviewing the 71V3576S150PFG8 datasheet, 71V3576S150PFG8 pinout, 71V3576S150PFG8 application, or 71V3576S150PFG8 equivalent, this device delivers deterministic timing for burst reads/writes in networking line cards, DSP memory buffers, and real-time industrial controllers where pipelined latency and low-power sleep mode (ZZ input) are critical design requirements.
Technical Context
The 71V3576S150PFG8 implements a synchronous architecture with registered address, data, and control inputs triggered on the rising edge of CLK. Its internal burst address counter advances on ADV=LOW and selects sequence order (linear or interleaved) based on static LBO state - no runtime reconfiguration allowed.
Burst operation delivers four consecutive 36-bit words per address cycle, with first-word output pipelined by one clock cycle. Write cycles are self-timed and support full-word (GW), byte-select (BWE + BW1–BW4), or mixed granularity, while OE enables asynchronous output control and ZZ provides asynchronous power-down with guaranteed data retention.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 128K × 36-bit (4.608 Mbit); fixed configuration for this part number |
| Clock Frequency | 150 MHz - enables 6.7 ns minimum clock cycle time for high-throughput burst transfers |
| Access Time | 3.8 ns clock-to-data (tCD) - defines worst-case valid data window after CLK high for timing-critical interfaces |
| Supply Voltages | VDD = 3.3 V ±5% (core), VDDQ = 3.3 V ±5% (I/O) - requires dual 3.3V rails with independent decoupling |
| Operating Temperature | 0°C to +70°C (Commercial grade) - validated performance across full range without derating |
| Power Consumption | IDD = 295 mA max @ 150 MHz (Commercial) - determines thermal budget and regulator sizing |
| Package | 100-pin TQFP (14 mm × 20 mm, JEDEC standard) - surface-mount compatible with standard reflow profiles |
Pinout & Package
Packaged in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body size, with 0.5 mm pitch and exposed pad not present. Pin 1 identifier located at top-left corner (counted counterclockwise).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | Synchronous address latching on rising CLK edge gated by ADSP/ADSC; A0–A16 used for 128K×36 addressing |
| CLK | System Clock Input | Primary timing reference; all synchronous operations aligned to rising edge; no internal PLL |
| CE, CS0, CS1 | Chip Enable / Selects | Three-level chip selection logic (CE LOW + CS1 LOW + CS0 HIGH) enables device decoding in multi-SRAM systems |
| GW, BWE, BW1–BW4 | Write Control Inputs | GW initiates full 36-bit write; BWE enables byte-write mode; BW1–BW4 select 9-bit I/O groups (I/O0–7/I/OP1, etc.) |
| ADV, ADSP, ADSC, LBO | Burst & Address Control | ADV advances burst counter; ADSP/ADSC load address register; LBO sets static burst order (HIGH = interleaved, LOW = linear) |
| OE | Output Enable | Asynchronous control: LOW enables outputs, HIGH forces I/O pins to high-impedance - critical for bus sharing |
| ZZ | Sleep Mode Input | Asynchronous HIGH disables internal clock and reduces current to ≤35 mA (ISB1/IZZ), retaining data without external refresh |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O | 36-bit bidirectional synchronous bus; registered input/output paths ensure clean setup/hold margins at 150 MHz |
| VDD, VDDQ, VSS | Power & Ground | VDD (core), VDDQ (I/O), and VSS require separate low-ESR decoupling; VDDQ must track VDD within ±0.1 V |
Key Features
| Feature | Design Value |
|---|---|
| Pipelined Burst Outputs | Delivers first data word one clock cycle after address latch, enabling continuous 150 MHz throughput without inter-cycle gaps |
| Single-Cycle Deselect | Device enters high-impedance state within one CLK cycle after CE/CS deassertion - eliminates bus contention in multi-master systems |
| Self-Timed Write Cycle | Internal timing logic completes writes without external wait-state generation, simplifying controller interface logic |
| Linear/Interleaved Burst Selection | LBO pin statically configures burst address sequence (A0/A1 progression), matching cache line layouts in x86 or PowerPC systems |
| Low-Power Sleep Mode | ZZ HIGH reduces supply current to ≤35 mA while preserving all memory contents - ideal for power-gated subsystems |
Applications
| Networking Line Card Buffer | DSP Data Memory |
|---|---|
|
Use Scenario: High-speed packet buffering in 10G Ethernet MAC interfaces requiring zero-wait-state access to 128K×36 memory space. IC Role / Device Role / Timing Role: Primary burst-access SRAM serving as receive/transmit FIFO with pipelined read/write capability synchronized to line-rate clock. Use Value: 3.8 ns tCD and 150 MHz clocking enable full-line-rate buffering without pipeline stalls or external wait states. |
Use Scenario: Real-time coefficient storage and intermediate result caching in radar signal processing FPGAs operating at 125+ MHz. IC Role / Device Role / Timing Role: Low-latency, burst-capable memory bank interfaced directly to FPGA fabric for parallel FFT/IFFT data flow. Use Value: Single-cycle deselect and pipelined outputs prevent bus turnaround delays during rapid context switching between processing stages. |
| Industrial Motion Controller Cache | Avionics Display Frame Buffer |
|
Use Scenario: Position-loop lookup table storage in servo drives requiring deterministic access under -40°C to +70°C ambient conditions. IC Role / Device Role / Timing Role: Deterministic-access SRAM holding trajectory profiles and PID parameters, accessed synchronously with motion engine clock. Use Value: Guaranteed 150 MHz operation across commercial temperature range ensures consistent loop timing without thermal throttling. |
Use Scenario: Dual-port frame buffer replacement in ruggedized cockpit displays where radiation tolerance and long-term data retention are required. IC Role / Device Role / Timing Role: High-reliability synchronous SRAM providing glitch-free pixel data streaming to display controller with sleep-mode data hold. Use Value: ZZ-controlled sleep mode retains frame buffer contents during display blanking intervals without external refresh circuitry. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Cypress CY7C1371D-167AXC | 128K × 36, 167 MHz, 3.3V, 100-pin TQFP - faster clock but higher IDD (340 mA) and no ZZ sleep mode | Requires active refresh during idle periods; unsuitable for battery-backed or ultra-low-power sleep scenarios | Select when maximum bandwidth >150 MHz is mandatory and power budget allows ≥340 mA active current |
| Renesas R1EX24032AS0C0I#U0 | 128K × 36, 133 MHz, 3.3V, 100-pin TQFP - slower speed (4.2 ns tCD), identical ZZ sleep and burst functionality | Compatible pinout and command set; lower frequency limits system throughput but reduces EMI and timing margin pressure | Select when 133 MHz meets system timing and lower power (250 mA IDD) or cost sensitivity outweighs 150 MHz requirement |
Compared with CY7C1371D-167AXC, the 71V3576S150PFG8 trades 17 MHz peak bandwidth for integrated sleep mode and 45 mA lower active current; versus R1EX24032AS0C0I#U0, it delivers 17 MHz headroom and identical low-power behavior at slightly higher cost.
Availability
71V3576S150PFG8 is available at Aetrix Electronics and suitable for networking infrastructure, DSP acceleration, and industrial motion control applications requiring stable component supply, long-lifecycle support, and guaranteed commercial-temperature performance.
Supply support for 71V3576S150PFG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
IDT (Integrated Device Technology) is a fabless semiconductor company specializing in high-performance memory, timing, and interface solutions for communications, computing, and industrial markets.
The 71V3576S150PFG8 belongs to IDT's pipelined burst synchronous SRAM product line, designed specifically for low-latency, high-bandwidth buffer and cache applications in systems demanding deterministic timing and robust power management.
FAQ
What memory organization does the 71V3576S150PFG8 implement?
The 71V3576S150PFG8 implements a fixed 128K × 36-bit (4.608 Mbit) memory organization. It is not configurable as 256K × 18 - that configuration applies only to the 71V3578 family. Address lines A0–A16 are used, with A17 reserved as no-connect in this variant.
Does the 71V3576S150PFG8 support both linear and interleaved burst modes?
Yes, the 71V3576S150PFG8 supports both burst modes via the LBO (Linear Burst Order) input. When LBO is driven LOW, linear addressing (00→01→10→11) is selected; when HIGH, interleaved addressing (00→01→11→10) is used. LBO must remain static during operation and is sampled asynchronously.
What is the function of the ZZ pin on the 71V3576S150PFG8?
The ZZ pin on the 71V3576S150PFG8 enables asynchronous sleep mode. When driven HIGH, it gates the internal clock and reduces supply current to ≤35 mA (IZZ) while guaranteeing full data retention. The device resumes normal operation within tZZR (100 ns) after ZZ returns LOW.
How many byte-write enable signals does the 71V3576S150PFG8 provide?
The 71V3576S150PFG8 provides four individual byte-write enable signals: BW1, BW2, BW3, and BW4. Each controls a 9-bit segment of the 36-bit data bus (BW1 → I/O0–7 + I/OP1, BW2 → I/O8–15 + I/OP2, etc.), allowing granular 9-bit writes alongside global (GW) or byte-write-enable (BWE) control.
Is the 71V3576S150PFG8 pin-compatible with the 71V3578S150PFG8?
No, the 71V3576S150PFG8 is not pin-compatible with the 71V3578S150PFG8. Although both use 100-pin TQFP packages, their pinouts differ significantly - notably, BW3/BW4 are functional on the 71V3576 but NC on the 71V3578, and address pin allocation (A15–A17) varies between the 128K×36 and 256K×18 configurations.
71V3576S150PFG8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 100-LQFP
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 4.5Mbit
- Memory Organization:
- 128K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 150 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 3.8 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 100-TQFP (14x14)
71V3576S150PFG8 FAQ
1.How can I place an order for 71V3576S150PFG8 through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V3576S150PFG8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V3576S150PFG8 reliable?
The price and inventory of 71V3576S150PFG8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V3576S150PFG8 is usually 5 days.
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71V3576S150PFG8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V3576S150PFG8 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V3576S150PFG8?
For technical support, including 71V3576S150PFG8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V3576S150PFG8 requirements.
6.How does Aetrix verify that 71V3576S150PFG8 is sourced from the original manufacturer or authorized distributors?
All 71V3576S150PFG8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V3576S150PFG8 meets industry standards.
7.What is the process for return or replacement of 71V3576S150PFG8?
All 71V3576S150PFG8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V3576S150PFG8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V3576S150PFG8 part is unused and in its original packaging.
Return procedure for 71V3576S150PFG8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V3576S150PFG8 Tags
-
M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
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