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Renesas 71V3576S150PFGI

Part No.:
71V3576S150PFGI
Manufacturer:
Renesas
Category:
Memory
Package:
100-LQFP
Datasheet:
Aetrix71V3576S150PFGI.pdf
Description:
IC SRAM 4.5MBIT PARALLEL 100TQFP
Quantity:
Payment:
Payment
Shipping:
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Inventory:4,453

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Product details

Overview

71V3576S150PFGI from IDT is a 128K × 36-bit, 3.3V synchronous SRAM with pipelined outputs, burst counter, and single-cycle deselect-designed for high-speed cache and buffer applications in networking and telecom systems. It delivers 150MHz operation (6.7ns clock cycle), 3.8ns clock-to-data access, and supports linear/interleaved burst modes via LBO input.

For engineers reviewing the 71V3576S150PFGI datasheet, 71V3576S150PFGI pinout, 71V3576S150PFGI application, or 71V3576S150PFGI equivalent, this page provides verified timing parameters, JEDEC-standard 100-pin TQFP package details, industrial-grade temperature support (–40°C to +85°C), and functional alternatives for memory subsystem design.

Technical Context

The 71V3576S150PFGI implements a synchronous architecture with registered address, data, and control inputs triggered on the rising edge of CLK. Its internal burst counter generates four consecutive addresses from a single input, enabling pipelined read/write bursts with ADV, ADSP, and ADSC coordination.

Burst sequencing is determined by the static LBO pin state (linear vs. interleaved), while self-timed writes are controlled by GW, BWE, and BW1–BW4 byte enables. Power management includes asynchronous ZZ-driven sleep mode (IZZ ≤ 35mA) and CMOS standby (ISB1 ≤ 35mA).

Key Specifications

Parameter Value and Actual Design Meaning
Memory Organization 128K × 36-bit (4.608 Mbit); supports 36-bit wide data path for high-bandwidth buffering
Clock Frequency 150 MHz (tCYC = 6.7 ns); enables system-level timing closure in 6.67 ns clock domains
Access Time tCD = 3.8 ns (clock-high to valid data); ensures first burst word meets tight pipeline latency budgets
Supply Voltage VDD = VDDQ = 3.3 V ±5%; compatible with standard 3.3V logic interfaces and I/O rails
Operating Temperature –40°C to +85°C (Industrial grade); qualified for base station, industrial controller, and ruggedized embedded use
Package JEDEC-standard 100-pin TQFP (14 mm × 20 mm); surface-mount compatible with automated assembly
Power Consumption IDDACTIVE = 305 mA max (150 MHz, Industrial); ISB1 = 35 mA max in CMOS standby mode

Pinout & Package

71V3576S150PFGI is housed in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), measuring 14 mm × 20 mm, with 0.5 mm lead pitch and exposed thermal pad (not electrically connected). Pin 1 is marked by a dot or beveled corner per standard orientation.

Pin/Terminal Circuit Role Design Meaning
A0–A17 Address Inputs Synchronous address register inputs; A0–A16 used for 128K×36 addressing; A17 is NC in this configuration
CLK Clock Input Rising-edge-triggered master clock; all synchronous operations referenced to this signal
CE, CS0, CS1 Chip Enable / Selects Three-level chip selection logic (CE low, CS0 high, CS1 low) enables precise bank decoding
GW, BWE, BW1–BW4 Write Control Inputs Global write (GW) or byte-selectable writes (BWE + BWx) allow full- or partial-word updates without bus contention
ADV, ADSP, ADSC Burst Address Control ADV advances internal burst counter; ADSP/ADSC load initial address-supports processor/cache controller interfacing
LBO, ZZ Mode Configuration LBO selects linear/interleaved burst order; ZZ asynchronously gates CLK and reduces current to ≤35 mA in sleep
I/O0–I/O31, I/OP1–I/OP4 Data I/O 36-bit bidirectional synchronous data bus (32 data + 4 parity); registered I/O paths ensure timing predictability
VDD, VDDQ, VSS Power/Ground Dual-supply design: VDD (3.3V core), VDDQ (3.3V I/O), and dedicated VSS pins minimize noise coupling

Key Features

Feature Design Value
Pipelined Burst Outputs Four consecutive data words delivered on successive clock edges after one address setup-reduces average latency by 75% vs. non-burst access
Single-Cycle Deselect Chip deactivation completes within one clock cycle, enabling rapid context switching between memory banks or devices
Self-Timed Write Cycle Internal timing logic eliminates external write pulse generation; simplifies FPGA/CPLD interface design and reduces control logic overhead
Byte-Write Capability Independent BW1–BW4 enable writing to four 9-bit subwords (I/O0–7/I/OP1, I/O8–15/I/OP2, etc.), preserving unmodified data in partial writes
Industrial Temperature Support Full functionality guaranteed from –40°C to +85°C with validated IDD, tCD, and timing margins-no derating required

Applications

High-Speed Network Buffering Telecom Line Card Caching

Use Scenario: Storing packet headers and metadata in 10Gbps Ethernet switch ASIC interfaces.

IC Role / Device Role / Timing Role: Synchronous SRAM acting as low-latency, burst-capable first-level packet buffer with pipelined output alignment to SerDes clock domains.

Use Value: 3.8ns tCD and 150MHz clocking enable real-time header inspection without pipeline stalls; 36-bit width matches common MAC-layer bus widths.

Use Scenario: Serving as instruction/data cache for DSP-based voice processing on E1/T1 line cards.

IC Role / Device Role / Timing Role: Burst-mode SRAM providing zero-wait-state code fetch and coefficient storage for TI C6000-series DSPs.

Use Value: Linear burst sequence (LBO = LOW) matches DSP's sequential instruction flow; single-cycle deselect allows fast context switching between voice channels.

Industrial PLC Data Logging Ruggedized Test Equipment Memory

Use Scenario: Capturing sensor timestamped samples at 100 kS/s in programmable logic controllers operating in factory environments.

IC Role / Device Role / Timing Role: High-reliability SRAM buffer holding transient process data before transfer to flash or host MCU.

Use Value: Industrial temperature rating (–40°C to +85°C) and ZZ sleep mode (IZZ ≤ 35 mA) ensure continuous logging during thermal cycling and power-save intervals.

Use Scenario: Acting as acquisition memory in portable oscilloscopes requiring deterministic burst capture and replay.

IC Role / Device Role / Timing Role: Pipelined SRAM delivering synchronized waveform samples to FPGA-based trigger and display engines.

Use Value: 100-pin TQFP package supports high-density PCB layout; tCHZ = 3.8 ns guarantees clean output disable timing for glitch-free waveform reconstruction.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
71V3576S150PFG Same 128K×36 organization and 150MHz speed, but commercial temperature range (0°C to +70°C) Not rated for extended thermal environments; unsuitable for outdoor telecom or industrial control cabinets Select 71V3576S150PFGI when ambient operating temperature exceeds +70°C or falls below 0°C
71V3578S150PFGI 256K×18 organization (same density, different width); identical timing, package, and temperature specs Optimized for 18-bit-wide buses (e.g., legacy DSPs); requires PCB trace re-routing due to different address/data pin mapping Choose 71V3578S150PFGI only if system bus width is 18-bit or parity is not required; otherwise retain 71V3576S150PFGI for 36-bit compatibility

Compared with 71V3576S150PFG and 71V3578S150PFGI, the 71V3576S150PFGI uniquely combines 36-bit data width, 150MHz performance, and industrial temperature qualification-making it the sole option for new designs requiring all three attributes simultaneously.

Availability

71V3576S150PFGI is available at Aetrix Electronics and suitable for high-speed network buffering, telecom caching, industrial data logging, and test equipment memory applications requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for 71V3576S150PFGI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology) is a fabless semiconductor company specializing in high-performance timing, memory, and RF solutions, now part of Renesas Electronics since 2019.

The 71V3576/78 family was designed specifically for low-latency, burst-capable memory subsystems in communications infrastructure-emphasizing pipelined timing, industrial reliability, and flexible write granularity.

FAQ

What is the maximum clock frequency supported by the 71V3576S150PFGI?

The 71V3576S150PFGI is rated for 150 MHz operation, corresponding to a minimum clock cycle time (tCYC) of 6.7 ns. This speed is guaranteed over the full industrial temperature range (–40°C to +85°C) and 3.3V ±5% supply conditions, with tCD = 3.8 ns clock-to-data delay measured under worst-case conditions.

Does the 71V3576S150PFGI support both linear and interleaved burst modes?

Yes, the 71V3576S150PFGI supports both burst modes via the LBO (Linear Burst Order) pin. When LBO is driven LOW, the device uses linear addressing (00→01→10→11); when HIGH, it uses interleaved order (00→01→11→10). LBO is a static input and must remain stable during burst operation.

How does the 71V3576S150PFGI handle power-down and sleep modes?

The 71V3576S150PFGI offers two low-power states: CMOS standby (ISB1 ≤ 35 mA) when deselected, and full sleep mode (IZZ ≤ 35 mA) activated by driving ZZ HIGH. Sleep mode gates the internal clock and preserves data; recovery time (tZZR) is 100 ns minimum after ZZ returns LOW.

What is the function of the ADV, ADSP, and ADSC pins on the 71V3576S150PFGI?

ADV advances the internal burst counter during burst reads/writes. ADSP (Address Status from Processor) and ADSC (Address Status from Cache Controller) are synchronous inputs that load the address register on their falling edge-both are active LOW and function identically for address latching, enabling interoperability with diverse host controllers.

Can the 71V3576S150PFGI perform partial-word writes?

Yes, the 71V3576S150PFGI supports byte-selectable writes using BWE and BW1–BW4. With BWE LOW, individual BWx signals enable writing to four 9-bit subwords (e.g., BW1 controls I/O0–I/O7 and I/OP1). Any active BWx disables all outputs, ensuring bus integrity during partial updates.

71V3576S150PFGI Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
100-LQFP
Packaging:
Tube
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, SDR
Memory Size:
4.5Mbit
Memory Organization:
128K x 36
Memory Interface:
Parallel
Clock Frequency:
150 MHz
Write Cycle Time - Word, Page:
-
Access Time:
3.8 ns
Voltage - Supply:
3.135V ~ 3.465V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
100-TQFP (14x14)

71V3576S150PFGI FAQ

1.How can I place an order for 71V3576S150PFGI through Aetrix?

Please submit a Request for Quotation (RFQ) for 71V3576S150PFGI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 71V3576S150PFGI reliable?

The price and inventory of 71V3576S150PFGI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V3576S150PFGI is usually 5 days.

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We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V3576S150PFGI transactions.

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71V3576S150PFGI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 71V3576S150PFGI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 71V3576S150PFGI?

For technical support, including 71V3576S150PFGI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V3576S150PFGI requirements.

6.How does Aetrix verify that 71V3576S150PFGI is sourced from the original manufacturer or authorized distributors?

All 71V3576S150PFGI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V3576S150PFGI meets industry standards.

7.What is the process for return or replacement of 71V3576S150PFGI?

All 71V3576S150PFGI units undergo pre-shipment inspection (PSI). If there is an issue with 71V3576S150PFGI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 71V3576S150PFGI part is unused and in its original packaging.

Return procedure for 71V3576S150PFGI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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