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Renesas 71V3576S150PFGI8
- Part No.:
- 71V3576S150PFGI8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 100-LQFP
- Datasheet:
-
71V3576S150PFGI8.pdf
- Description:
- IC SRAM 4.5MBIT PARALLEL 100TQFP
- Quantity:
- Payment:
- Shipping:
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Product details
Overview
71V3576S150PFGI8 from IDT is a 128K × 36-bit, 3.3V synchronous SRAM with pipelined outputs, burst counter, and single-cycle deselect. It operates at 150MHz (3.8ns clock access time), supports linear/interleaved burst modes via LBO input, and features global write (GW), byte write enables (BW1–BW4), and sleep mode (ZZ). Used in high-speed cache and networking buffers requiring deterministic latency.
For engineers reviewing the 71V3576S150PFGI8 datasheet, 71V3576S150PFGI8 pinout, 71V3576S150PFGI8 application, or 71V3576S150PFGI8 equivalent, key selection criteria include burst-mode timing compliance, 100-pin TQFP footprint compatibility, industrial temperature support (–40°C to +85°C), and pipelined read/write cycle coordination with ADSP/ADSC address status signals.
Technical Context
This SRAM implements a synchronous, clock-driven architecture with registered address, data, and control paths. Its internal burst counter advances on ADV=LOW and selects sequence order via LBO-linear (LBO=LOW) or interleaved (LBO=HIGH)-with A0/A1 defining four-word burst addresses.
Write operations are self-timed and support multiple configurations: global write (GW active), byte-select writes (BWE + BW1–BW4), or mixed-mode control. Power management includes asynchronous ZZ-triggered sleep mode (IZZ ≤ 35mA) and synchronous standby (ISB1 ≤ 35mA), both preserving data retention.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 128K × 36-bit (4.608 Mbit); supports 256K × 18-bit via pin-compatible variant 71V3578 |
| Clock Frequency | 150 MHz - enables 6.7 ns clock cycle time for high-throughput burst transfers |
| Access Time | 3.8 ns - guaranteed clock-to-data valid delay (tCD) under commercial/industrial conditions |
| Supply Voltages | VDD = 3.3 V ±5% (core), VDDQ = 3.3 V ±5% (I/O) - separate power domains reduce noise coupling |
| Operating Temperature | –40°C to +85°C - qualified for industrial embedded systems with thermal cycling resilience |
| Package | 100-pin TQFP (14 mm × 20 mm, JEDEC standard) - surface-mount compatible with automated assembly |
| Power Consumption | IDD = 305 mA max (150 MHz, industrial); IZZ = 35 mA max in full sleep mode |
Pinout & Package
71V3576S150PFGI8 is housed in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), measuring 14 mm × 20 mm, with 0.5 mm lead pitch. Pin 1 is located at top-left corner (notch-marked side).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | Synchronous inputs latched on rising CLK edge with ADSP/ADSC; A0–A16 used for 128K×36 mode |
| CLK | Clock Input | Primary timing reference; all synchronous registers triggered on rising edge |
| GW, BWE, BW1–BW4 | Write Control Inputs | GW enables full 36-bit write; BWE gates BWx; BW1–BW4 select 9-bit bytes (I/O0–7/I/OP1, etc.) |
| ADSP / ADSC | Address Status Inputs | Active-LOW synchronous signals loading address register; ADSP gated by CE, ADSC independent |
| ADV | Burst Address Advance | Active-LOW signal advancing internal burst counter; HIGH suspends burst sequence |
| LBO | Burst Order Select | Asynchronous static input: LOW = linear burst, HIGH = interleaved burst (per A0/A1 sequence) |
| ZZ | Sleep Mode Enable | Asynchronous HIGH input gating internal CLK and reducing current to IZZ ≤ 35 mA |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O | 36-bit bidirectional bus with registered input/output paths; pipelined output valid one cycle after CLK |
| OE | Output Enable | Asynchronous LOW enables output drivers; HIGH forces high-impedance state regardless of clock |
| VDD / VDDQ / VSS | Power Supplies | VDD (3.3 V core), VDDQ (3.3 V I/O), VSS (common ground); decoupling required per JEDEC layout guidelines |
Key Features
| Feature | Design Value |
|---|---|
| Pipelined Burst Outputs | Delivers first data on second rising CLK edge; subsequent burst words appear on next three edges - eliminates wait states in CPU/cache interfaces |
| Single-Cycle Deselect | Chip deactivation completes within one clock cycle (CE/CS0/CS1 transition), enabling rapid bank switching in multi-SRAM systems |
| Configurable Burst Mode | LBO pin selects linear or interleaved addressing without firmware change - matches processor cache line ordering requirements |
| Self-Timed Write Cycle | Internal timing logic eliminates external write pulse width constraints; supports GW, BWE, or BWx-only activation |
| Industrial Temperature Support | Full functionality and AC/DC specs guaranteed from –40°C to +85°C - suitable for base station, router, and motor control applications |
| Green Packaging | Lead-free, RoHS-compliant TQFP (Pb-free plating, halogen-free molding compound) per ordering suffix "G" |
Applications
| Networking Packet Buffer | High-Speed Cache Memory |
|---|---|
Use Scenario: Temporary storage of Ethernet frames in Layer 2/L3 switches before forwarding or classification. IC Role / Device Role / Timing Role: Synchronous SRAM providing low-latency, burst-capable buffer with deterministic 3.8 ns tCD for line-rate processing. Use Value: Enables 150 MHz packet ingress/egress without FIFO bottlenecks; pipelined reads align with MAC controller clock domains. |
Use Scenario: Secondary cache between RISC-V or ARM-based SoC and DDR memory subsystem. IC Role / Device Role / Timing Role: High-bandwidth, low-jitter memory interface supporting burst-aligned instruction/data fetches. Use Value: Linear burst mode matches cache line fill patterns; single-cycle deselect allows fast context switching between CPU cores. |
| Industrial PLC Data Logging | Test Equipment Pattern Memory |
Use Scenario: Real-time acquisition and timestamped buffering of sensor data in programmable logic controllers. IC Role / Device Role / Timing Role: Industrial-grade SRAM retaining data integrity during thermal transients and EMI exposure. Use Value: –40°C to +85°C operation ensures reliability in factory-floor environments; ZZ sleep mode reduces power during idle logging intervals. |
Use Scenario: Storage of stimulus/response vectors in automated test equipment (ATE) for semiconductor validation. IC Role / Device Role / Timing Role: Deterministic-access memory synchronized to pattern generator clocks for repeatable waveform generation. Use Value: 100-pin TQFP footprint simplifies PCB routing for high-density vector memory arrays; burst writes accelerate test program loading. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1371DV33-167AXC | 128K × 36, 167 MHz, 3.3 V, 100-pin TQFP; no LBO pin - fixed linear burst only | Lacks configurable burst order; requires redesign if interleaved mode needed | Select when maximum speed (167 MHz) is critical and burst order is fixed |
| AS7C3128A-15JCIN | 128K × 36, 150 MHz, 3.3 V, 100-pin TQFP; no ADSP/ADSC dual address status inputs | Uses single address latch signal; less flexible for cache-coherent or multi-master systems | Select for cost-sensitive designs where simplified control interface suffices |
Compared with CY7C1371DV33-167AXC and AS7C3128A-15JCIN, the 71V3576S150PFGI8 uniquely combines industrial temperature rating, dual address status support (ADSP/ADSC), and hardware-configurable burst order (LBO), making it optimal for cache and networking applications demanding timing flexibility and environmental robustness.
Availability
71V3576S150PFGI8 is available at Aetrix Electronics and suitable for networking packet buffers, industrial PLC data logging, and high-speed cache memory requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for 71V3576S150PFGI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
IDT (Integrated Device Technology), now part of Renesas Electronics, is a fabless semiconductor company specializing in timing, memory interface, and RF solutions for communications and computing infrastructure.
The 71V3576S150PFGI8 belongs to IDT's high-speed synchronous SRAM product line, engineered for deterministic latency, burst efficiency, and industrial reliability in cache, buffer, and real-time control subsystems.
FAQ
What is the maximum operating frequency and corresponding access time for the 71V3576S150PFGI8?
The 71V3576S150PFGI8 is rated for 150 MHz operation with a guaranteed clock-to-data valid time (tCD) of 3.8 ns under industrial temperature conditions (–40°C to +85°C). This specification is validated across VDD and VDDQ at 3.3 V ±5%, and applies to pipelined read cycles with OE asserted. The device also supports 133 MHz operation (4.2 ns tCD) for lower-power or margin-critical designs.
How does the LBO pin affect burst addressing behavior in the 71V3576S150PFGI8?
The LBO (Linear Burst Order) pin configures the internal burst counter sequence: when LBO is LOW, the 71V3576S150PFGI8 executes linear burst addressing (00→01→10→11 on A1/A0); when HIGH, it uses interleaved order (00→01→11→10). LBO is asynchronous and static - it must remain stable during burst operation. This hardware-selectable mode eliminates software overhead for matching processor cache line layouts.
Can the 71V3576S150PFGI8 operate with only ADSP or only ADSC asserted, and what is the functional difference?
Yes - the 71V3576S150PFGI8 accepts address latching via either ADSP (processor-oriented) or ADSC (cache-controller-oriented), but they are not interchangeable in all contexts. ADSP is gated by CE, while ADSC is independent. In systems using both, ADSC typically loads addresses during cache fills, and ADSP handles CPU-initiated accesses. Both trigger the same address register on their active-LOW edge synchronized to CLK.
What power states does the 71V3576S150PFGI8 support, and how is sleep mode entered?
The 71V3576S150PFGI8 supports three power states: active (IDD ≤ 305 mA), CMOS standby (ISB1 ≤ 35 mA), and full sleep (IZZ ≤ 35 mA). Sleep mode is entered asynchronously by driving ZZ HIGH; this internally gates the CLK and reduces current draw while maintaining data retention. Recovery requires tZZR ≥ 100 ns after ZZ returns LOW before valid operations resume.
Is the 71V3576S150PFGI8 pin-compatible with the 71V3578S150PFGI8, and what design changes are needed for migration?
The 71V3576S150PFGI8 (128K × 36) and 71V3578S150PFGI8 (256K × 18) share identical 100-pin TQFP packaging and pinout, including power, clock, control, and I/O assignments. Migration requires only PCB-level reconfiguration of address decoding (A17 used in 71V3578, not 71V3576) and data bus mapping (18-bit vs. 36-bit I/O grouping). No layout change is needed.
71V3576S150PFGI8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 100-LQFP
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 4.5Mbit
- Memory Organization:
- 128K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 150 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 3.8 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 100-TQFP (14x14)
71V3576S150PFGI8 FAQ
1.How can I place an order for 71V3576S150PFGI8 through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V3576S150PFGI8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V3576S150PFGI8 reliable?
The price and inventory of 71V3576S150PFGI8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V3576S150PFGI8 is usually 5 days.
3.What payment methods are accepted for 71V3576S150PFGI8?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V3576S150PFGI8 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 71V3576S150PFGI8?
71V3576S150PFGI8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V3576S150PFGI8 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V3576S150PFGI8?
For technical support, including 71V3576S150PFGI8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V3576S150PFGI8 requirements.
6.How does Aetrix verify that 71V3576S150PFGI8 is sourced from the original manufacturer or authorized distributors?
All 71V3576S150PFGI8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V3576S150PFGI8 meets industry standards.
7.What is the process for return or replacement of 71V3576S150PFGI8?
All 71V3576S150PFGI8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V3576S150PFGI8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V3576S150PFGI8 part is unused and in its original packaging.
Return procedure for 71V3576S150PFGI8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V3576S150PFGI8 Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
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24LC01BT-I/OT
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M24C02-FMC6TG
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
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24AA02UIDT-I/OT
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AT24C08C-STUM-T
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