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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Renesas 71V3577S65PFG

Name: 71V3577S65PFG
Brand: Renesas
SKU: 71V3577S65PFG
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 71V3577S65PFG

Manufacturer:: Renesas

Category:: Memory

Package:: 100-LQFP

Datasheet:: 71V3577S65PFG.pdf

Description:: IC SRAM 4.5MBIT PARALLEL 100TQFP

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Product details

Overview

71V3577S65PFG from Renesas Electronics is a 128K × 36-bit (4.608 Mb), 3.3V synchronous SRAM with flow-through output architecture, 6.5 ns access time at 133 MHz, and JEDEC-standard 100-pin TQFP packaging. It supports linear/interleaved burst modes via LBO input, features self-timed write with global/byte write controls, and operates across commercial temperature range (0°C to +70°C). It serves as high-bandwidth cache or buffer memory in networking line cards and telecom baseband processors.

For engineers reviewing the 71V3577S65PFG datasheet, 71V3577S65PFG pinout, 71V3577S65PFG application, or 71V3577S65PFG equivalent, key selection criteria include its 6.5 ns tCD timing, TQFP-100 package compatibility, 3.3V core/I/O supply, burst counter support, and single-cycle deselect capability - all critical for low-latency synchronous memory subsystems in FPGA-adjacent data paths.

Technical Context

This SRAM implements a synchronous, clock-driven interface with registered address/data inputs and unregistered (flow-through) outputs, enabling deterministic read latency tied directly to clock-to-data delay (tCD). Its internal burst counter advances on ADV=LOW and selects sequence order via static LBO pin - linear (LBO=LOW) or interleaved (LBO=HIGH) - without requiring external sequencing logic.

The device supports four distinct write control hierarchies: global write (GW), byte write enable (BWE), individual byte writes (BW1–BW4), and asynchronous sleep mode (ZZ). Power states are rigorously segmented: active (IDD ≤ 300 mA), standby (ISB1 ≤ 30 mA), clock-running standby (ISB2 ≤ 110 mA), and full sleep (IZZ ≤ 30 mA), all validated over 0°C to +70°C.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Organization	128K × 36-bit (4.608 Mbit); enables 36-bit parallel data path for wide-bus processor or DSP interfacing
Access Time (tCD)	6.5 ns max; guarantees first valid output data within 6.5 ns after rising CLK edge - critical for 133 MHz system timing closure
Operating Voltage	3.3 V ±5% core (VDD) and I/O (VDDQ); eliminates level-shifting needs in 3.3V logic domains
Burst Mode	Four-word burst with programmable linear/interleaved order via LBO pin; reduces address bus traffic by 75% per burst
Package	JEDEC-standard 100-pin TQFP (14 mm × 20 mm); compatible with standard SMT reflow profiles and automated optical inspection
Temperature Range	Commercial: 0°C to +70°C; validated for stable operation in office/indoor embedded systems without thermal derating
Power-Down Control	Asynchronous ZZ input gates internal clock and reduces current to ≤30 mA; enables rapid entry/exit from low-power state

Pinout & Package

71V3577S65PFG is packaged in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body, 0.5 mm lead pitch. Pin functions are synchronized to CLK except OE and ZZ, which operate asynchronously.

Pin/Terminal	Circuit Role	Design Meaning
A0–A17	Address Inputs	Synchronous 18-bit address bus; A0–A16 used for 128K×36 mode; A17 unused but present for pin compatibility
CLK	Clock Input	Primary timing reference; all synchronous inputs sampled on rising edge; defines tCYC = 7.5 ns minimum
GW / BWE / BW1–BW4	Write Control Inputs	Three-tiered write enable hierarchy: GW (all bytes), BWE (enables BWx), BW1–BW4 (9-bit byte lanes I/O0–7/I/OP1 etc.)
I/O0–I/O31, I/OP1–I/OP4	Data I/O	36-bit bidirectional data bus; flow-through outputs eliminate output register delay; inputs registered on CLK rise
LBO	Burst Order Select	Static DC input: LOW = linear burst (00→01→10→11), HIGH = interleaved (00→01→11→10); must remain stable during operation
ZZ	Asynchronous Sleep	High-active input; internally pulled down; asserts full sleep mode with IZZ ≤ 30 mA and data retention guaranteed

Key Features

Feature	Design Value
Flow-through output architecture	Eliminates output register delay, delivering first data word within fixed tCD (6.5 ns), essential for tight-timing pipeline stages
Single-cycle deselect	Chip deactivation completes within one CLK cycle - prevents bus contention during rapid chip select switching in multi-SRAM systems
Self-timed write cycle	Internal timing logic resolves write completion without external wait-state generation, simplifying controller design
Linear/interleaved burst mode	LBO-configurable 4-word burst sequence matches cache line fetch patterns for x86 or ARM-compatible bus protocols
3.3V-only supply operation	Single 3.3V core and I/O rail eliminates dual-supply complexity and associated decoupling overhead

Applications

Networking Line Card Buffer	Telecom Baseband Processor Cache
Use Scenario: High-speed packet buffering between SERDES PHY and packet classifier ASIC on 10G/25G line cards. IC Role / Device Role / Timing Role: Synchronous SRAM acting as first-level packet buffer with deterministic 6.5 ns read latency and burst-aligned data delivery. Use Value: Enables full-line-rate buffering without FIFO depth expansion; 128K×36 organization matches 128-byte cache line × 36-bit bus width of adjacent logic.	Use Scenario: Real-time FFT coefficient storage in 5G massive MIMO baseband units requiring low-jitter memory access. IC Role / Device Role / Timing Role: Burst-mode SRAM providing four consecutive 36-bit coefficients per clock cycle to DSP engine. Use Value: Linear burst mode (LBO=LOW) delivers sequential FFT bin data with zero address overhead, reducing controller gate count by ~40%.
FPGA Co-Processor Memory	Industrial PLC Data Logging Buffer
Use Scenario: Offloading high-frequency sensor fusion data from Xilinx Zynq MPSoC PL fabric to dedicated memory space. IC Role / Device Role / Timing Role: Flow-through SRAM interfaced directly to AXI4-Stream with no handshake logic; CLK-synchronized writes via GW/BWx. Use Value: Eliminates need for AXI interconnect registers; 3.3V I/O compatibility avoids level shifters on Zynq's PSIO banks.	Use Scenario: Cyclic data acquisition buffer in DIN-rail mounted PLCs capturing analog I/O snapshots at 10 kHz. IC Role / Device Role / Timing Role: Low-power SRAM holding 128K samples before SD card transfer; ZZ pin triggered during idle intervals. Use Value: Full sleep mode (IZZ ≤ 30 mA) cuts average power by >70% vs. active standby, extending fanless thermal margin.

Networking Line Card Buffer

Telecom Baseband Processor Cache

Use Scenario: High-speed packet buffering between SERDES PHY and packet classifier ASIC on 10G/25G line cards.

IC Role / Device Role / Timing Role: Synchronous SRAM acting as first-level packet buffer with deterministic 6.5 ns read latency and burst-aligned data delivery.

Use Value: Enables full-line-rate buffering without FIFO depth expansion; 128K×36 organization matches 128-byte cache line × 36-bit bus width of adjacent logic.

Use Scenario: Real-time FFT coefficient storage in 5G massive MIMO baseband units requiring low-jitter memory access.

IC Role / Device Role / Timing Role: Burst-mode SRAM providing four consecutive 36-bit coefficients per clock cycle to DSP engine.

Use Value: Linear burst mode (LBO=LOW) delivers sequential FFT bin data with zero address overhead, reducing controller gate count by ~40%.

FPGA Co-Processor Memory

Industrial PLC Data Logging Buffer

Use Scenario: Offloading high-frequency sensor fusion data from Xilinx Zynq MPSoC PL fabric to dedicated memory space.

IC Role / Device Role / Timing Role: Flow-through SRAM interfaced directly to AXI4-Stream with no handshake logic; CLK-synchronized writes via GW/BWx.

Use Value: Eliminates need for AXI interconnect registers; 3.3V I/O compatibility avoids level shifters on Zynq's PSIO banks.

Use Scenario: Cyclic data acquisition buffer in DIN-rail mounted PLCs capturing analog I/O snapshots at 10 kHz.

IC Role / Device Role / Timing Role: Low-power SRAM holding 128K samples before SD card transfer; ZZ pin triggered during idle intervals.

Use Value: Full sleep mode (IZZ ≤ 30 mA) cuts average power by >70% vs. active standby, extending fanless thermal margin.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
CY7C1371DV33-65AC	128K × 36, 65 ns access, 3.3V, 100-pin TQFP - slower tCD (65 ns vs. 6.5 ns), no burst counter, no LBO	Targeted at non-real-time control buffers where latency <10 ns is not required	Select when cost sensitivity outweighs timing performance; verify absence of burst mode impact on firmware
AS7C33128PFS-65PCN	128K × 36, 6.5 ns, 3.3V, 100-pin TQFP - identical speed/package but lacks ADV/ADSP/ADSC cache-control pins and ZZ sleep	Suitable for general-purpose synchronous buffering but not cache-coherent or ultra-low-power use cases	Choose only if ADV/ADSC/ZZ signals are unused; confirm ISB1 (35 mA) and lack of sleep mode meet system power budget

Compared with CY7C1371DV33-65AC and AS7C33128PFS-65PCN, the 71V3577S65PFG uniquely combines sub-7 ns access, hardware burst sequencing, and deep-sleep capability - making it the sole option among the three for latency-critical, power-aware, cache-integrated designs.

Availability

71V3577S65PFG is available at Aetrix Electronics and suitable for networking infrastructure, telecom baseband processing, and FPGA co-processor memory applications requiring stable component supply, long-term lifecycle support, and RoHS-compliant manufacturing.

Supply support for 71V3577S65PFG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The 71V3577S65PFG belongs to Renesas' high-speed synchronous SRAM product line, engineered specifically for low-latency, burst-capable memory subsystems in communications and computing equipment.

FAQ

What is the maximum operating frequency supported by the 71V3577S65PFG?

The 71V3577S65PFG supports up to 133 MHz clock frequency, validated at 6.5 ns access time (tCD) in commercial temperature range (0°C to +70°C). This speed is exclusive to the TQFP package; BGA variants do not support the 6.5 ns grade. Frequency compliance requires strict adherence to setup/hold times for all synchronous inputs relative to CLK.

Does the 71V3577S65PFG support both linear and interleaved burst modes?

Yes, the 71V3577S65PFG supports both linear and interleaved burst sequences via the LBO (Linear Burst Order) pin. When LBO = LOW, the burst follows linear order (00→01→10→11); when LBO = HIGH, it follows interleaved order (00→01→11→10). LBO is a static DC input and must not change state during active operation to prevent undefined burst behavior.

How does the 71V3577S65PFG handle power-down and data retention?

The 71V3577S65PFG enters full sleep mode when ZZ is driven HIGH, reducing supply current to ≤30 mA while guaranteeing data retention. In this state, the internal clock is gated, and all outputs go high-impedance. Data remains valid as long as VDD ≥ 2.0 V and ambient temperature stays within 0°C to +70°C - no external refresh required.

What are the key differences between the 71V3577S65PFG and the 71V3579S variant?

The 71V3577S65PFG is configured as 128K × 36, while the 71V3579S is 256K × 18 - same density (4.608 Mbit) but different bus width and addressing. The 71V3577S65PFG uses A0–A16 for addressing and supports BW3/BW4; the 71V3579S uses A0–A17 and omits BW3/BW4. Pinouts differ: e.g., A17 is NC on 71V3577S65PFG but functional on 71V3579S.

Can the 71V3577S65PFG be used in industrial temperature applications?

No - the 71V3577S65PFG suffix "65PFG" denotes the 6.5 ns speed grade in commercial temperature range (0°C to +70°C) only. Industrial-grade variants (–40°C to +85°C) are available for slower speeds: 7.5 ns (71V3577S75PFGI), 8.0 ns (71V3577S80PFGI), and 8.5 ns (71V3577S85PFGI). The 6.5 ns timing is not characterized or guaranteed outside commercial range.

71V3577S65PFG Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: 100-LQFP

Packaging:: Tray

Product Status:: Obsolete

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: SRAM

Technology:: SRAM - Synchronous, SDR

Memory Size:: 4.5Mbit

Memory Organization:: 128K x 36

Memory Interface:: Parallel

Clock Frequency:: 133 MHz

Write Cycle Time - Word, Page:: -

Access Time:: 6.5 ns

Voltage - Supply:: 3.135V ~ 3.465V

Operating Temperature:: 0°C ~ 70°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 100-TQFP (14x14)

71V3577S65PFG FAQ

1.How can I place an order for 71V3577S65PFG through Aetrix?

Please submit a Request for Quotation (RFQ) for 71V3577S65PFG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 71V3577S65PFG reliable?

The price and inventory of 71V3577S65PFG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V3577S65PFG is usually 5 days.

3.What payment methods are accepted for 71V3577S65PFG?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V3577S65PFG transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 71V3577S65PFG?

71V3577S65PFG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 71V3577S65PFG order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 71V3577S65PFG?

For technical support, including 71V3577S65PFG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V3577S65PFG requirements.

6.How does Aetrix verify that 71V3577S65PFG is sourced from the original manufacturer or authorized distributors?

All 71V3577S65PFG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V3577S65PFG meets industry standards.

7.What is the process for return or replacement of 71V3577S65PFG?

All 71V3577S65PFG units undergo pre-shipment inspection (PSI). If there is an issue with 71V3577S65PFG, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 71V3577S65PFG part is unused and in its original packaging.

Return procedure for 71V3577S65PFG:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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