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Renesas 71V3577S75BG
- Part No.:
- 71V3577S75BG
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 119-BGA
- Datasheet:
-
71V3577S75BG.pdf
- Description:
- IC SRAM 4.5MBIT PAR 119PBGA
- Quantity:
- Payment:
- Shipping:
Inventory:3,037
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Product details
Overview
71V3577S75BG from Renesas Electronics is a 128K × 36-bit (4.608 Mb), 3.3V synchronous SRAM with flow-through output architecture, 7.5 ns access time, and support for up to 117 MHz clock frequency in commercial and industrial temperature ranges. It features burst counter logic, linear/interleaved burst mode selection via LBO pin, and single-cycle deselect capability - deployed in high-bandwidth cache and buffer applications in networking and telecom line cards.
For engineers reviewing the 71V3577S75BG datasheet, 71V3577S75BG pinout, 71V3577S75BG application, or 71V3577S75BG equivalent, key selection criteria include its TQFP-100 package compatibility, 3.3V core/I/O supply, synchronous burst read/write timing, flow-through output path (no output register), and industrial-grade –40°C to +85°C operation.
Technical Context
The 71V3577S75BG implements a synchronous, clock-driven interface with registered address, control, and data input paths, while maintaining a flow-through (unregistered) output path for minimal read latency. Its internal burst address counter advances on ADV=LOW and supports four-word bursts with address sequencing determined by LBO state (linear or interleaved).
Write operations are fully self-timed and configurable via GW (global write), BWE (byte write enable), and BW1–BW4 (individual byte write selects). Power management includes asynchronous ZZ-controlled sleep mode with guaranteed data retention and low ISB2 (clock-running standby) current of 90 mA at 117 MHz.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 128K × 36-bit (4.608 Mbit); supports 256K × 18-bit configuration via address mapping |
| Access Time / Max Frequency | 7.5 ns / 117 MHz - enables tight-timing CPU/cache interfaces without wait states |
| Supply Voltages | VDD = 3.3 V ±5% (core), VDDQ = 3.3 V ±5% (I/O) - compatible with standard 3.3V logic families |
| Operating Temperature | –40°C to +85°C (industrial grade) - validated for embedded telecom and industrial control environments |
| Burst Mode Control | LBO pin selects linear or interleaved 4-word burst sequence - critical for cache-line alignment in RISC processors |
| Power-Down Current | IZZ = 35 µA max in full sleep mode (ZZ HIGH) - reduces system standby power in always-on equipment |
| Output Architecture | Flow-through (no output register) - eliminates one clock cycle of output latency vs. pipelined SRAMs |
Pinout & Package
71V3577S75BG is packaged in a JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm body, with 0.5 mm pitch. Pinout conforms to PKG100 footprint for 128K × 36 configuration.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | Synchronous inputs latched on rising CLK edge with ADSP/ADSC; A0–A16 used for 128K×36 addressing |
| CLK | System Clock Input | Primary timing reference for all synchronous operations; no internal clock division |
| CE, CS0, CS1 | Chip Enable / Selects | Three-level chip select hierarchy (CE active LOW, CS0 active HIGH, CS1 active LOW) for multi-SRAM decoding |
| ADV | Burst Address Advance | Active LOW signal that increments internal burst counter; HIGH suspends burst sequence |
| LBO | Linear/Interleaved Burst Order | Asynchronous static input selecting burst address pattern - must remain stable during operation |
| GW, BWE, BW1–BW4 | Write Control Inputs | GW enables full 36-bit writes; BWE gates BWx; BW1–BW4 control 9-bit byte lanes (I/O0–7/I/OP1, etc.) |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O | 36-bit bidirectional bus with registered input path and flow-through output path - no output register delay |
| ZZ | Sleep Mode Input | Asynchronous HIGH activates full sleep mode; internal pull-down ensures safe default state |
Key Features
| Feature | Design Value |
|---|---|
| Flow-through output architecture | Eliminates output register delay - tCD = 7.5 ns directly from CLK edge to valid data, critical for zero-wait-state designs |
| Configurable burst mode | LBO pin selects linear or interleaved 4-word burst order - matches ARM/PowerPC cache-line fetch patterns |
| Single-cycle deselect | Chip deactivation completes within one clock cycle - prevents bus contention during rapid context switches |
| Self-timed write cycle | Internal timing logic resolves write completion without external strobes - simplifies controller design and timing closure |
| Industrial temperature support | Validated operation from –40°C to +85°C with full AC/DC specs - suitable for base station and industrial PLC deployments |
Applications
| Networking Line Card Buffer | High-Speed Cache Memory |
|---|---|
|
Use Scenario: Buffering packet headers and metadata in 10G/25G Ethernet switch ASIC interfaces. IC Role / Device Role / Timing Role: Synchronous SRAM acting as low-latency, burst-capable first-level packet buffer between MAC and switch fabric. Use Value: 7.5 ns tCD and flow-through outputs enable deterministic sub-10 ns read response, reducing packet jitter in time-sensitive forwarding paths. |
Use Scenario: Instruction/data cache for RISC-V or MIPS-based network processors requiring burst-aligned 36-bit word access. IC Role / Device Role / Timing Role: High-speed cache memory interfaced directly to processor's synchronous bus with ADV/LBO-controlled burst reads. Use Value: Linear burst mode aligns with 128-bit cache lines; 117 MHz operation sustains >400 MB/s sustained bandwidth per device. |
| Telecom Baseband Processing | Industrial Motion Controller Buffer |
|
Use Scenario: Real-time buffering of IQ samples between FPGA-based digital downconverters and DSP cores in 4G/5G radio units. IC Role / Device Role / Timing Role: Synchronous SRAM providing deterministic latency for sample FIFOs with precise clock-domain crossing control. Use Value: Single-cycle deselect and ZZ sleep mode allow dynamic power gating between processing frames - cutting idle power by >95%. |
Use Scenario: Position command queue storage in servo drive controllers where deterministic write latency affects motion profile accuracy. IC Role / Device Role / Timing Role: Burst-write-capable SRAM accepting coordinated position/velocity updates from real-time motion engine. Use Value: Byte-write enables partial updates to 9-bit control fields without disturbing adjacent axis data; BWE+BWx avoids full-word overwrites. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1375BV33-75BGXI | 128K × 32-bit, 75 MHz max, 3.3V, 100-pin TQFP - lacks ADV/LBO burst control and flow-through output | Requires external burst generation logic; higher read latency due to pipelined output register | Choose when burst control is handled externally and 32-bit width suffices |
| IS61WV102432BLL-7.5BLI | 1M × 32-bit, 7.5 ns, 3.3V, 100-pin TQFP - wider density but no ADV/LBO or single-cycle deselect | Higher capacity but fixed linear burst; not drop-in for cache-line-aligned burst timing requirements | Choose for larger buffer depth where burst flexibility is secondary to capacity |
Compared with CY7C1375BV33-75BGXI and IS61WV102432BLL-7.5BLI, the 71V3577S75BG uniquely delivers flow-through latency, programmable burst order, and single-cycle deselect - essential for cache coherency and real-time buffer control in high-frequency systems.
Availability
71V3577S75BG is available at Aetrix Electronics and suitable for networking line card buffers, telecom baseband processing, industrial motion controller buffers, and high-speed cache memory applications requiring stable component supply across extended product lifecycles.
Supply support for 71V3577S75BG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.
The 71V3577S75BG belongs to Renesas' high-speed synchronous SRAM product line, engineered specifically for low-latency, burst-oriented memory subsystems in networking, telecom, and real-time control systems.
FAQ
What is the maximum operating frequency supported by the 71V3577S75BG?
The 71V3577S75BG supports up to 117 MHz clock frequency with 7.5 ns access time, validated across both commercial (0°C to +70°C) and industrial (–40°C to +85°C) temperature ranges. This speed is achievable in the TQFP-100 package and requires adherence to specified setup/hold times for all synchronous inputs relative to CLK.
Does the 71V3577S75BG support both 128K × 36 and 256K × 18 configurations?
Yes, the 71V3577S75BG is internally organized as 128K × 36 but supports 256K × 18 operation through address remapping - confirmed in the functional description and pin configuration diagrams. The 256K × 18 mode uses A0–A17 for addressing and reconfigures byte write enables accordingly.
How does the flow-through output architecture of the 71V3577S75BG affect system timing?
The 71V3577S75BG's flow-through output path eliminates the output register found in pipelined SRAMs, resulting in tCD = 7.5 ns directly from CLK rise to valid data. This reduces read latency by one clock cycle - critical for zero-wait-state CPU and ASIC interfaces where timing margins are constrained.
What is the role of the LBO pin on the 71V3577S75BG, and how must it be used?
The LBO (Linear Burst Order) pin on the 71V3577S75BG is an asynchronous static input that selects between linear (LBO = LOW) and interleaved (LBO = HIGH) 4-word burst sequences. It must remain stable during device operation; changing LBO mid-burst may cause undefined address sequencing and data corruption.
Can the 71V3577S75BG enter low-power sleep mode, and what is its sleep current?
Yes, the 71V3577S75BG enters full sleep mode when ZZ is driven HIGH, reducing supply current to IZZ ≤ 35 µA (max) while retaining data. The internal pull-down on ZZ ensures safe default-active behavior if left unconnected, and recovery time tZZR is guaranteed at 100 ns.
71V3577S75BG Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 119-BGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 4.5Mbit
- Memory Organization:
- 128K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 117 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 7.5 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 119-PBGA (14x22)
71V3577S75BG FAQ
1.How can I place an order for 71V3577S75BG through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V3577S75BG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V3577S75BG reliable?
The price and inventory of 71V3577S75BG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V3577S75BG is usually 5 days.
3.What payment methods are accepted for 71V3577S75BG?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V3577S75BG transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 71V3577S75BG?
71V3577S75BG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V3577S75BG order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V3577S75BG?
For technical support, including 71V3577S75BG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V3577S75BG requirements.
6.How does Aetrix verify that 71V3577S75BG is sourced from the original manufacturer or authorized distributors?
All 71V3577S75BG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V3577S75BG meets industry standards.
7.What is the process for return or replacement of 71V3577S75BG?
All 71V3577S75BG units undergo pre-shipment inspection (PSI). If there is an issue with 71V3577S75BG, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V3577S75BG part is unused and in its original packaging.
Return procedure for 71V3577S75BG:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V3577S75BG Tags
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