My Inquiry
My Account
Renesas 71V3577S75BG8
- Part No.:
- 71V3577S75BG8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 119-BGA
- Datasheet:
-
71V3577S75BG8.pdf
- Description:
- IC SRAM 4.5MBIT PAR 119PBGA
- Quantity:
- Payment:
- Shipping:
Inventory:1,901
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
71V3577S75BG8 from Renesas Electronics is a 128K × 36-bit (4.608 Mb), 3.3V synchronous SRAM with flow-through output architecture, 7.5 ns access time, and burst counter support for high-speed cache and buffer applications in networking and telecom systems.
For engineers reviewing the 71V3577S75BG8 datasheet, 71V3577S75BG8 pinout, 71V3577S75BG8 application, or 71V3577S75BG8 equivalent, this device delivers deterministic timing, single-cycle deselect, linear/interleaved burst mode selection via LBO, and industrial-grade reliability across –40°C to +85°C.
Technical Context
The 71V3577S75BG8 implements a synchronous interface with registered address, control, and data inputs, and a flow-through (unregistered) output path-enabling clock-to-data delays as low as 7.5 ns. Its internal burst address counter advances on ADV=LOW and supports four-word bursts with ordering determined by the static LBO input.
Burst operation is fully self-timed: write cycles are initiated by GW or BWE/BWx combinations, while read cycles require only ADSP/ADSC assertion and CLK edge triggering. Power management includes asynchronous ZZ sleep mode (IZZ ≤ 35 µA) and synchronous standby modes (ISB1 ≤ 35 mA).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 128K × 36-bit (4.608 Mbit); supports 256K × 18-bit via pin-compatible mapping |
| Access Time (tCD) | 7.5 ns max - guarantees deterministic read latency at up to 117 MHz clock frequency |
| Supply Voltages | VDD = 3.3 V ±5% (core); VDDQ = 3.3 V ±5% (I/O) - enables direct interfacing with 3.3V logic families |
| Burst Mode Control | LBO pin selects linear or interleaved 4-word burst sequence - no external controller required |
| Power-Down Support | Asynchronous ZZ input reduces ICC to ≤35 µA in full sleep mode - critical for thermal/power-constrained systems |
| Operating Temperature | –40°C to +85°C industrial range - qualified for base station, industrial control, and automotive infotainment environments |
| Package | 119-ball BGA (BG119), JEDEC-compliant footprint - optimized for high-density PCB layouts with controlled impedance routing |
Pinout & Package
71V3577S75BG8 is packaged in a 119-ball fine-pitch ball grid array (BG119) per JEDEC MO-245, with 1.0 mm ball pitch and 12 mm × 12 mm body size. Pin functions are defined per Renesas datasheet Rev. 6.42 (Sep 2023).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A16 | Address Inputs | 17-bit synchronous address bus; latched on rising CLK edge with ADSP/ADSC assertion |
| CLK | System Clock Input | Primary timing reference; all synchronous operations aligned to rising edge |
| ADSP / ADSC | Address Status Inputs | Processor- or cache-controller-initiated address load triggers burst counter and register capture |
| ADV | Burst Address Advance | Active-LOW signal that increments internal burst counter; HIGH suspends burst progression |
| LBO | Linear/Interleaved Burst Order | Static DC input selecting burst address sequence (LBO=LOW → linear; LBO=HIGH → interleaved) |
| GW / BWE / BW1–BW4 | Write Control Inputs | GW enables full 36-bit writes; BWE + BWx enable byte-selectable 9-bit writes (BW1→I/O0–7+I/OP1, etc.) |
| OE | Output Enable | Asynchronous control of I/O drivers - enables tri-state during partial burst reads or bus sharing |
| ZZ | Sleep Mode Input | Asynchronous HIGH disables internal clock and reduces supply current to ≤35 µA |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O Terminals | 36-bit bidirectional synchronous data bus with flow-through outputs - zero output register delay |
| VDD / VDDQ / VSS | Power & Ground | Dual-supply design: VDD powers core logic; VDDQ powers I/O buffers - allows independent noise isolation |
Key Features
| Feature | Design Value |
|---|---|
| Flow-through output architecture | Eliminates output register delay - enables tCD = 7.5 ns with no added clock-to-data skew |
| Single-cycle deselect capability | Device exits active state within one CLK cycle after CE/CS deassertion - prevents bus contention in multi-SRAM systems |
| Self-timed write cycle | Internal timing logic resolves write completion without external wait-state generation - simplifies controller design |
| Configurable burst order (LBO) | Hardware-selectable linear or interleaved addressing eliminates software overhead for cache line alignment |
| Industrial temperature qualification | Guaranteed operation from –40°C to +85°C with full AC/DC specs - suitable for uncontrolled environmental deployments |
| Low-power sleep mode (ZZ) | Reduces ICC to ≤35 µA while retaining memory contents - extends uptime in battery-backed or energy-harvested systems |
Applications
| Networking Packet Buffer | Telecom Line Card Cache |
|---|---|
|
Use Scenario: High-throughput packet buffering in 10G Ethernet switch fabric ASICs requiring low-latency, burst-aligned memory access. IC Role / Device Role / Timing Role: Synchronous SRAM serving as first-level packet descriptor cache with deterministic 7.5 ns read latency and burst-optimized address sequencing. Use Value: Enables full-line-rate forwarding by delivering four consecutive descriptors per clock cycle without pipeline stalls. |
Use Scenario: Real-time frame buffering in DOCSIS 3.1 cable modem line cards operating under thermal stress and voltage variation. IC Role / Device Role / Timing Role: Industrial-temperature SRAM providing burst-mode data storage for upstream/downstream channel processors with strict jitter tolerance. Use Value: Maintains 117 MHz operation across –40°C to +85°C with guaranteed tCD ≤ 7.5 ns - eliminates thermal derating in field-deployed units. |
| Industrial PLC Data Log | Avionics Sensor Interface Buffer |
|
Use Scenario: Cyclic data logging in programmable logic controllers where deterministic write timing and power-down retention are mandatory. IC Role / Device Role / Timing Role: Flow-through SRAM acting as ring buffer for sensor timestamped values, using GW-controlled writes and ZZ sleep between acquisition cycles. Use Value: Single-cycle deselect and self-timed writes ensure no data loss during rapid context switches between I/O scan and communication tasks. |
Use Scenario: High-integrity sensor data aggregation in flight control computers requiring radiation-tolerant timing and fail-safe power management. IC Role / Device Role / Timing Role: Burst-capable SRAM buffering inertial measurement unit (IMU) samples with LBO-configured linear addressing for predictable DMA transfers. Use Value: Asynchronous ZZ sleep mode retains logged data during brown-out events while drawing ≤35 µA - meets DO-254 transient power requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1371DV33-7BBXC | 128K × 32-bit organization; 7 ns access; 100-pin TQFP only; no LBO pin; uses ADV-only burst control | Lacks linear/interleaved burst selection; limited to commercial temp (0°C to +70°C); no industrial qualification | Select when LBO flexibility is unnecessary and TQFP packaging suffices for lower-density designs. |
| AS7C33128PFSIG | 128K × 32-bit; 8 ns access; 119-ball BGA; supports linear burst only; no ADV/LBO dual-mode control | No interleaved burst support; higher tCD (8 ns); same industrial temp range but lacks ZZ sleep mode | Choose for cost-sensitive industrial applications where burst mode is fixed and ultra-low sleep current is not required. |
Compared with CY7C1371DV33-7BBXC and AS7C33128PFSIG, the 71V3577S75BG8 uniquely combines industrial temperature operation, hardware-selectable burst order (LBO), full sleep mode (ZZ), and 7.5 ns access in a 119-ball BGA - making it optimal for thermally demanding, burst-flexible, and power-aware embedded systems.
Availability
71V3577S75BG8 is available at Aetrix Electronics and suitable for networking packet buffers, telecom line card caches, industrial PLC data logs, avionics sensor interface buffers, and high-reliability embedded systems requiring stable component supply and long-term lifecycle support.
Supply support for 71V3577S75BG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.
The 71V3577S series belongs to Renesas' high-performance synchronous SRAM product line, engineered for low-latency, burst-capable memory subsystems in telecom infrastructure, network switches, and real-time control systems.
FAQ
What memory organization does the 71V3577S75BG8 support?
The 71V3577S75BG8 is organized as 128K × 36 bits (4.608 Mbit). It also supports 256K × 18-bit configuration through pin-compatible address mapping, enabling flexible system-level memory width adaptation without redesigning the PCB layout.
Does the 71V3577S75BG8 support both linear and interleaved burst modes?
Yes, the 71V3577S75BG8 supports both linear and interleaved burst sequences via the LBO (Linear Burst Order) input pin. When LBO = LOW, linear addressing is used; when LBO = HIGH, interleaved addressing is selected - and LBO must remain static during operation.
What is the maximum clock frequency supported by the 71V3577S75BG8 at 7.5 ns access time?
At 7.5 ns access time (tCD), the 71V3577S75BG8 supports up to 117 MHz clock frequency across both commercial and industrial temperature ranges, as specified in the Renesas datasheet Rev. 6.42.
How does the 71V3577S75BG8 handle power-down and data retention?
The 71V3577S75BG8 enters full sleep mode when ZZ is driven HIGH, reducing ICC to ≤35 µA while guaranteeing data retention. This mode is asynchronous and requires no clock or control sequence - ideal for intermittent operation in power-constrained systems.
Is the 71V3577S75BG8 compatible with 3.3V-only system interfaces?
Yes, the 71V3577S75BG8 uses separate 3.3V core (VDD) and 3.3V I/O (VDDQ) supplies, with VIH thresholds referenced to VDDQ. It interfaces directly with standard 3.3V LVTTL and LVCMOS logic families without level-shifting circuitry.
71V3577S75BG8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 119-BGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 4.5Mbit
- Memory Organization:
- 128K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 117 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 7.5 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 119-PBGA (14x22)
71V3577S75BG8 FAQ
1.How can I place an order for 71V3577S75BG8 through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V3577S75BG8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V3577S75BG8 reliable?
The price and inventory of 71V3577S75BG8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V3577S75BG8 is usually 5 days.
3.What payment methods are accepted for 71V3577S75BG8?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V3577S75BG8 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 71V3577S75BG8?
71V3577S75BG8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V3577S75BG8 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V3577S75BG8?
For technical support, including 71V3577S75BG8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V3577S75BG8 requirements.
6.How does Aetrix verify that 71V3577S75BG8 is sourced from the original manufacturer or authorized distributors?
All 71V3577S75BG8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V3577S75BG8 meets industry standards.
7.What is the process for return or replacement of 71V3577S75BG8?
All 71V3577S75BG8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V3577S75BG8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V3577S75BG8 part is unused and in its original packaging.
Return procedure for 71V3577S75BG8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V3577S75BG8 Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
-
AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
