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Renesas 71V3577S75BGG
- Part No.:
- 71V3577S75BGG
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 119-BGA
- Datasheet:
-
71V3577S75BGG.pdf
- Description:
- IC SRAM 4.5MBIT PAR 119PBGA
- Quantity:
- Payment:
- Shipping:
Inventory:3,384
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Product details
Overview
71V3577S75BGG from Renesas Electronics is a 128K × 36-bit (4.608 Mb), 3.3V synchronous SRAM with flow-through output architecture, 7.5 ns access time at up to 117 MHz, and burst counter support for cache-coherent systems. It features synchronous address latching via ADSP/ADSC, global and byte-level write control (GW/BWE/BW1–BW4), and linear/interleaved burst mode selection via LBO pin. Used in high-speed networking line cards and embedded real-time controllers requiring deterministic low-latency memory access.
For engineers reviewing the 71V3577S75BGG datasheet, 71V3577S75BGG pinout, 71V3577S75BGG application, or 71V3577S75BGG equivalent, key selection criteria include its TQFP-100 package compatibility, industrial temperature range (–40°C to +85°C), 3.3V I/O and core supply, single-cycle deselect capability, and support for burst read/write sequences without external counters.
Technical Context
The 71V3577S75BGG implements a synchronous, clock-driven interface with registered address and control inputs (CE, CS0, CS1, ADSP, ADSC, ADV, GW, BWE, BW1–BW4) sampled on the rising CLK edge. Its flow-through output path eliminates output register delay, enabling tCD = 7.5 ns clock-to-data timing under industrial conditions.
Burst operation is managed by an internal binary counter that advances A0/A1 per cycle based on ADV and LBO state - linear (LBO = LOW) or interleaved (LBO = HIGH) - delivering four consecutive 36-bit words per initial address. Self-timed writes use GW or byte-write enables with no external wait-state generation required.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 128K × 36-bit (4.608 Mbit); supports 256K × 18-bit mode via pin strapping |
| Access Time / Max Frequency | 7.5 ns / 117 MHz (commercial & industrial temp ranges) |
| Supply Voltages | VDD = VDDQ = 3.3 V ±5%; separate core and I/O rails enable noise isolation |
| Operating Temperature | –40°C to +85°C (industrial grade); validated across full range for reliability-critical systems |
| Power Consumption | IDD = 255 mA (max, industrial @ 117 MHz); ISB2 = 90 mA (clock running, deselected) |
| Burst Mode Control | LBO pin selects linear or interleaved 4-word burst sequence; static configuration, no runtime change |
| Output Architecture | Flow-through (no output register); enables immediate data availability after tCD, critical for pipeline-aligned reads |
Pinout & Package
Packaged in JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm body, 0.5 mm pitch. Pin 1 marked by corner notch; pin 14 (VSS) requires < VIL but not direct GND tie; pin 64 (ZZ) may float to force active mode.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | Synchronous address latch inputs; A0–A16 used for 128K×36, A0–A17 for 256K×18 mode |
| CLK | Clock Input | Rising-edge-triggered timing reference for all synchronous inputs and internal registers |
| ADSP / ADSC | Address Status Inputs | Processor- or cache-controller-initiated address load; both active-low, gated by CE |
| ADV | Burst Address Advance | Active-low signal controlling burst counter increment; HIGH suspends burst sequence |
| LBO | Linear/Interleaved Burst Order | DC-configurable burst sequence mode; LOW = linear, HIGH = interleaved; must remain static during operation |
| GW / BWE / BW1–BW4 | Write Control Inputs | Global write (GW), byte-write enable (BWE), and four 9-bit byte-selects (BW1–BW4) for granular 36-bit writes |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O | 36-bit bidirectional data bus; registered input path, flow-through output path; I/OPx are parity bits |
| OE | Output Enable | Asynchronous enable; LOW activates outputs, HIGH forces high-Z regardless of clock or chip select |
| ZZ | Sleep Mode | Asynchronous sleep control; HIGH gates internal clock and reduces current to IZZ = 35 mA (industrial) |
Key Features
| Feature | Design Value |
|---|---|
| Flow-through output architecture | Eliminates output register delay, enabling guaranteed tCD ≤ 7.5 ns for deterministic timing in pipelined systems |
| Single-cycle deselect | Chip deactivation completes within one CLK cycle - no residual bus contention or metastability risk |
| Configurable burst order (LBO) | Hardware-selectable linear or interleaved 4-word burst sequences match processor/cache addressing patterns |
| Self-timed write cycle | No external wait-state logic needed; internal timing resolves GW/BWE/BWx priority before final write commit |
| Separate VDD/VDDQ supplies | Isolates core logic noise from I/O drivers, supporting clean signal integrity in mixed-signal environments |
Applications
| High-Speed Network Line Cards | Real-Time Industrial Controllers |
|---|---|
|
Use Scenario: Packet buffering and header lookup in 10G Ethernet switch ASIC interfaces. IC Role / Device Role / Timing Role: Synchronous SRAM serving as low-latency, burst-capable packet memory with deterministic 7.5 ns read access. Use Value: Enables full-line-rate forwarding by sustaining 117 MHz burst reads without pipeline stalls or external timing glue. |
Use Scenario: Motion control loop storage in CNC machine tool servo drives. IC Role / Device Role / Timing Role: Real-time data buffer between FPGA motion sequencer and ADC/DAC peripherals. Use Value: Industrial temperature rating (–40°C to +85°C) and flow-through outputs ensure jitter-free position update timing under thermal stress. |
| Cache-Coherent Multiprocessor Systems | Avionics Data Acquisition Units |
|
Use Scenario: Shared L2 cache tag RAM in dual-core ARM-based flight management computers. IC Role / Device Role / Timing Role: Burst-mode SRAM interfacing with cache controller ADSC/ADV signals for cache line fills. Use Value: Linear/interleaved burst modes align with ARM Cortex-A cache line ordering, reducing bus arbitration overhead. |
Use Scenario: Sensor data staging in DO-254-compliant airborne data concentrators. IC Role / Device Role / Timing Role: Radiation-tolerant (qualified) SRAM storing calibrated ADC samples prior to ARINC-429 transmission. Use Value: ZZ sleep mode (IZZ = 35 mA) extends battery life during standby while guaranteeing data retention. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 71V3577S80BGG | Slower 8.0 ns access time (100 MHz max); identical pinout, package, and feature set | Lower-frequency designs where 117 MHz headroom is unnecessary; reduced power (IDD = 200 mA) | Select when system clock is ≤100 MHz and lower dynamic power is prioritized over peak bandwidth |
| 71V3579S75BGG | 256K × 18 organization (same density); lacks BW3/BW4 pins; different address pin mapping (A17 used) | Systems requiring 18-bit data bus width or legacy 256K×18 layout; incompatible with 128K×36 address decoding | Choose only if board design targets 18-bit interface or existing 71V3579 footprint; not drop-in compatible |
Compared with 71V3577S80BGG, the 71V3577S75BGG delivers 17 MHz higher frequency headroom at same power envelope; versus 71V3579S75BGG, it provides native 36-bit bus width and full byte-write granularity - critical for 32-bit+ processor coherency protocols.
Availability
71V3577S75BGG is available at Aetrix Electronics and suitable for high-speed networking equipment, real-time industrial controllers, and avionics data acquisition units requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for 71V3577S75BGG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.
The 71V3577S family is designed for high-performance, low-latency memory subsystems in cache-coherent and real-time deterministic systems - emphasizing burst efficiency, industrial reliability, and synchronous timing precision.
FAQ
What is the maximum operating frequency of the 71V3577S75BGG?
The 71V3577S75BGG supports up to 117 MHz clock frequency with 7.5 ns access time across commercial and industrial temperature ranges. This speed is guaranteed under VDD = VDDQ = 3.3 V ±5% and TA = –40°C to +85°C, making it suitable for demanding real-time applications where deterministic timing is essential.
Does the 71V3577S75BGG support both 128K × 36 and 256K × 18 memory configurations?
Yes, the 71V3577S75BGG supports both configurations: 128K × 36 (4.608 Mbit) and 256K × 18 (4.608 Mbit). The mode is selected via address pin usage - A0–A16 for 128K×36, A0–A17 for 256K×18 - with corresponding pin assignments differing per configuration as documented in the Renesas datasheet.
How does the LBO pin affect burst behavior in the 71V3577S75BGG?
The LBO pin on the 71V3577S75BGG statically selects burst order: LOW enables linear addressing (00→01→10→11), HIGH enables interleaved (00→01→11→10). It must remain stable during operation; changing LBO mid-burst causes undefined behavior. This hardware configuration avoids software overhead in cache line fill sequences.
What is the purpose of the ZZ pin on the 71V3577S75BGG?
When driven HIGH, the ZZ pin places the 71V3577S75BGG into full sleep mode, gating the internal clock and reducing supply current to IZZ = 35 mA (industrial). Data retention is guaranteed, and recovery time tZZR = 100 ns ensures rapid reactivation - ideal for power-constrained avionics or portable industrial systems.
Can the 71V3577S75BGG be used with a 3.3V-only system without level shifting?
Yes, the 71V3577S75BGG operates natively with VDD = VDDQ = 3.3 V ±5%, eliminating need for voltage translation. Its VIH (min) = 2.0 V and VIL (max) = 0.8 V are fully compatible with standard 3.3V CMOS logic families, and the device includes internal pull-down on ZZ and pull-up on LBO for robust default-state behavior.
71V3577S75BGG Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 119-BGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 4.5Mbit
- Memory Organization:
- 128K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 117 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 7.5 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 119-PBGA (14x22)
71V3577S75BGG FAQ
1.How can I place an order for 71V3577S75BGG through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V3577S75BGG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V3577S75BGG reliable?
The price and inventory of 71V3577S75BGG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V3577S75BGG is usually 5 days.
3.What payment methods are accepted for 71V3577S75BGG?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V3577S75BGG transactions.
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4.How is shipping managed for 71V3577S75BGG?
71V3577S75BGG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V3577S75BGG order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V3577S75BGG?
For technical support, including 71V3577S75BGG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V3577S75BGG requirements.
6.How does Aetrix verify that 71V3577S75BGG is sourced from the original manufacturer or authorized distributors?
All 71V3577S75BGG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V3577S75BGG meets industry standards.
7.What is the process for return or replacement of 71V3577S75BGG?
All 71V3577S75BGG units undergo pre-shipment inspection (PSI). If there is an issue with 71V3577S75BGG, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V3577S75BGG part is unused and in its original packaging.
Return procedure for 71V3577S75BGG:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V3577S75BGG Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
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24AA02UIDT-I/OT
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AT24C08C-STUM-T
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