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Renesas 71V3577S75BGG8
- Part No.:
- 71V3577S75BGG8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 119-BGA
- Datasheet:
-
71V3577S75BGG8.pdf
- Description:
- IC SRAM 4.5MBIT PAR 119PBGA
- Quantity:
- Payment:
- Shipping:
Inventory:1,310
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Product details
Overview
71V3577S75BGG8 from Renesas Electronics is a 128K × 36-bit (4.608 Mb), 3.3V synchronous SRAM with flow-through output architecture, 7.5 ns access time at up to 117 MHz, and JEDEC-standard 119-ball BGA (BGG) package. It supports linear/interleaved burst modes via LBO input, features single-cycle deselect, and operates across industrial temperature range (–40°C to +85°C). Used in high-speed cache and buffer applications requiring deterministic timing and low-latency data throughput.
For engineers reviewing the 71V3577S75BGG8 datasheet, 71V3577S75BGG8 pinout, 71V3577S75BGG8 application, or 71V3577S75BGG8 equivalent, key selection criteria include burst-mode compatibility, 3.3V I/O voltage tolerance, flow-through output latency, industrial-grade thermal stability, and TQFP/BGA package interchangeability in memory subsystems.
Technical Context
The 71V3577S75BGG8 implements a synchronous, clock-driven interface with registered address and data inputs, but unregistered (flow-through) outputs - enabling zero-cycle output latency after clock edge. Its internal burst counter generates four sequential addresses per ADV assertion, with ordering determined by the static LBO pin state (linear vs. interleaved).
Write control is hierarchical: GW enables full-word writes, while BWE and BW1–BW4 support byte-level granularity. Power management includes asynchronous ZZ sleep mode (IZZ ≤ 35 µA) and synchronous standby (ISB1 ≤ 35 mA), with all timing referenced strictly to CLK rising edge and meeting setup/hold requirements for CE, ADSP, ADSC, and ADV.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 128K × 36-bit (4.608 Mbit); supports 256K × 18-bit configuration via address mapping |
| Access Time / Max Frequency | 7.5 ns / 117 MHz (commercial & industrial grades); 6.5 ns only in TQFP, not applicable to BGG8 |
| Supply Voltages | VDD = 3.3 V ±5% (core), VDDQ = 3.3 V ±5% (I/O); separate power domains enable noise isolation |
| Burst Mode Control | LBO pin selects linear or interleaved 4-word burst sequence; static configuration, no runtime switching |
| Output Architecture | Flow-through (no output register); tCD = 7.5 ns max - data valid on same clock cycle as address latch |
| Power-Down Capability | Asynchronous ZZ input reduces ICC to ≤35 µA; retains data during sleep; requires deselection before wake-up |
| Operating Temperature | –40°C to +85°C (industrial grade); validated across full range for timing and retention |
Pinout & Package
71V3577S75BGG8 is packaged in a JEDEC-standard 119-ball fine-pitch BGA (BGG119), 12 mm × 12 mm body, 0.8 mm ball pitch. Pinout conforms to Renesas BG119 layout for 128K × 36 configuration (see Figure 6450 drw 02c).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A16 | Address Inputs | 17-bit address bus; latched synchronously on rising CLK when ADSP or ADSC asserts |
| CLK | System Clock Input | Primary timing reference; all synchronous operations edge-triggered on rising edge |
| GW, BWE, BW1–BW4 | Write Control Inputs | Global/byte write enables; BW1–BW4 each control one 9-bit data byte (I/O0–7+I/OP1, etc.) |
| ADV, ADSP, ADSC | Burst & Address Status | ADV advances internal burst counter; ADSP/ADSC load address register from processor/cache controller |
| LBO, ZZ | Configuration & Sleep | LBO sets burst order (static); ZZ forces full sleep mode (asynchronous, internal clock gating) |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O | 36-bit bidirectional bus; input path registered, output path flow-through (no latency register) |
| VDD, VDDQ, VSS | Power & Ground | Dual-supply design: VDD (core), VDDQ (I/O), and dedicated VSS planes minimize switching noise |
Key Features
| Feature | Design Value |
|---|---|
| Flow-through output architecture | Eliminates output register delay - tCD = 7.5 ns matches clock-to-data spec without added cycle penalty |
| Single-cycle deselect | Chip deactivation completes within one CLK cycle; enables rapid context switching in multi-SRAM systems |
| Configurable burst order (LBO) | Hardware-selectable linear or interleaved addressing - matches CPU cache line fetch patterns without software overhead |
| Byte-write granularity (BW1–BW4) | Independent 9-bit write enables allow partial-word updates without read-modify-write cycles |
| Industrial temperature support | Full AC/DC specs guaranteed from –40°C to +85°C - suitable for base stations, industrial controllers, and avionics |
Applications
| High-Speed Cache Buffer | Network Packet Buffer |
|---|---|
Use Scenario: Storing recently accessed instructions/data in a CPU's L2/L3 cache hierarchy where deterministic latency is critical. IC Role / Device Role / Timing Role: Synchronous SRAM acting as low-latency, burst-capable cache tag/data array with flow-through outputs. Use Value: 7.5 ns tCD enables sub-10 ns read turnaround - matching high-frequency processor pipelines without wait states. |
Use Scenario: Temporary storage of Ethernet or PCIe packets in switch fabric ASICs prior to forwarding or classification. IC Role / Device Role / Timing Role: Burst-mode SRAM buffering full 64-byte cache lines with single-cycle deselect between packet bursts. Use Value: Linear burst mode (LBO = LOW) aligns with sequential packet payload access, reducing address overhead by 75% per burst. |
| Real-Time DSP Memory | Industrial Motion Controller Buffer |
Use Scenario: Holding coefficient tables and intermediate results in motor control or audio processing DSPs running at >100 MHz. IC Role / Device Role / Timing Role: Dual-port-capable SRAM (via CE/CS partitioning) serving as ping-pong buffer for real-time sample streaming. Use Value: Asynchronous ZZ sleep mode cuts idle power to ≤35 µA - extending runtime in battery-backed motion systems. |
Use Scenario: Buffering encoder position data and servo command streams in CNC or robotic motion controllers operating in harsh environments. IC Role / Device Role / Timing Role: Industrial-grade SRAM providing reliable, jitter-free data capture under thermal stress (–40°C to +85°C). Use Value: Validated DC/AC specs across full temperature range ensure consistent 117 MHz operation without derating. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 71V3577S80BGG8 | Slower 8.0 ns access time (100 MHz max); identical pinout, package, and feature set | Suitable for cost-sensitive designs where 117 MHz is not required; lower power (ISB1 = 30 mA vs. 35 mA) | Select when system clock ≤100 MHz and thermal margin allows relaxed timing. |
| CY7C1371DV33-7BBAXC | Cypress (Infineon) 128K × 36 SRAM; 7 ns access, 144-ball FBGA; no LBO pin - fixed interleaved burst only | Lacks configurable burst order; different pin assignment (e.g., no ADSC); requires PCB redesign | Consider only if LBO flexibility is unnecessary and board layout supports CY7C1371D footprint. |
Compared with 71V3577S75BGG8, the 71V3577S80BGG8 trades 17 MHz bandwidth for lower standby current, while CY7C1371DV33-7BBAXC offers marginally faster access but sacrifices burst-mode configurability and requires mechanical redesign.
Availability
71V3577S75BGG8 is available at Aetrix Electronics and suitable for high-speed cache buffers, network packet buffers, real-time DSP memory, and industrial motion controller buffers requiring stable component supply and long-term industrial temperature support.
Supply support for 71V3577S75BGG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.
The 71V3577S family targets high-performance embedded systems needing deterministic, low-latency memory - designed specifically for cache, buffer, and FIFO applications in networking, test equipment, and real-time control.
FAQ
What is the maximum operating frequency of the 71V3577S75BGG8?
The 71V3577S75BGG8 supports up to 117 MHz operation, corresponding to a 7.5 ns clock cycle time (tCYC). This speed grade is validated across both commercial and industrial temperature ranges and applies specifically to the BGG119 package variant.
Does the 71V3577S75BGG8 support both 128K × 36 and 256K × 18 configurations?
Yes, the 71V3577S75BGG8 is internally organized as 128K × 36 but can be configured as 256K × 18 by remapping address bits - confirmed in the functional description and pin configuration diagrams for BG119. The memory array physically supports both modes.
Is the LBO pin on the 71V3577S75BGG8 dynamically controllable during operation?
No - the LBO pin on the 71V3577S75BGG8 is a static configuration input. The datasheet explicitly states it "must not change state while the device is operating." Burst order (linear vs. interleaved) must be set at power-up and held constant during active use.
What is the power consumption of the 71V3577S75BGG8 in sleep mode?
In full sleep mode (ZZ HIGH), the 71V3577S75BGG8 draws ≤35 µA (IZZ) across the industrial temperature range (–40°C to +85°C), with data retention guaranteed. This is specified in Table 09a under ISB2 and IZZ conditions.
Can the 71V3577S75BGG8 be used with a 2.5V I/O interface?
No - the 71V3577S75BGG8 requires VDDQ = 3.3 V ±5% for I/O operation. Its VIH(min) = 2.0 V and VOH(min) = 2.4 V are defined relative to 3.3 V, and absolute maximum ratings prohibit sustained operation below VDDQ = 3.135 V.
71V3577S75BGG8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 119-BGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 4.5Mbit
- Memory Organization:
- 128K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 117 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 7.5 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 119-PBGA (14x22)
71V3577S75BGG8 FAQ
1.How can I place an order for 71V3577S75BGG8 through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V3577S75BGG8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V3577S75BGG8 reliable?
The price and inventory of 71V3577S75BGG8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V3577S75BGG8 is usually 5 days.
3.What payment methods are accepted for 71V3577S75BGG8?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V3577S75BGG8 transactions.
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4.How is shipping managed for 71V3577S75BGG8?
71V3577S75BGG8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V3577S75BGG8 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V3577S75BGG8?
For technical support, including 71V3577S75BGG8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V3577S75BGG8 requirements.
6.How does Aetrix verify that 71V3577S75BGG8 is sourced from the original manufacturer or authorized distributors?
All 71V3577S75BGG8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V3577S75BGG8 meets industry standards.
7.What is the process for return or replacement of 71V3577S75BGG8?
All 71V3577S75BGG8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V3577S75BGG8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V3577S75BGG8 part is unused and in its original packaging.
Return procedure for 71V3577S75BGG8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V3577S75BGG8 Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
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24LC01BT-I/SN
Microchip Technology
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24AA02UIDT-I/OT
Microchip Technology
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AT24C08C-STUM-T
Microchip Technology
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