My Inquiry
My Account
Renesas 71V3577S75BGGI
- Part No.:
- 71V3577S75BGGI
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 119-BGA
- Datasheet:
-
71V3577S75BGGI.pdf
- Description:
- IC SRAM 4.5MBIT PAR 119PBGA
- Quantity:
- Payment:
- Shipping:
Inventory:2,972
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
71V3577S75BGGI from Renesas Electronics is a 128K × 36-bit (4.608 Mb), 3.3V synchronous SRAM with flow-through output architecture, 7.5 ns access time, and support for up to 117 MHz clock frequency in industrial temperature range (–40°C to +85°C). It features burst counter logic, linear/interleaved burst mode selection via LBO pin, and single-cycle deselect capability - deployed in high-performance networking line cards and real-time DSP buffers.
For engineers reviewing the 71V3577S75BGGI datasheet, 71V3577S75BGGI pinout, 71V3577S75BGGI application, or 71V3577S75BGGI equivalent, key selection criteria include its TQFP-100 package compatibility, 3.3V core/I/O supply, synchronous burst read/write timing, flow-through output latency, and industrial-grade power-down (ZZ) and byte-write (BW1–BW4) control.
Technical Context
This SRAM implements a synchronous, register-based address/data path with no output register - enabling true flow-through data delivery after tCD delay. Its internal burst counter advances on ADV=LOW and supports four-word bursts with address sequencing determined by LBO state (linear or interleaved).
Write operations are fully self-timed using GW (global write), BWE (byte write enable), and BW1–BW4 (individual 9-bit byte enables), allowing selective 9-bit writes without affecting other bytes. Chip enable is managed via CE, CS0 (active-HIGH), and CS1 (active-LOW) with synchronous sampling relative to CLK.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 128K × 36-bit (4.608 Mbit); supports 256K × 18-bit configuration via address mapping |
| Access Time / Max Frequency | 7.5 ns / 117 MHz (industrial temp); enables tight timing closure in 100+ MHz bus systems |
| Supply Voltages | VDD = 3.3 V ±5% (core); VDDQ = 3.3 V ±5% (I/O); separate rails allow I/O voltage stability during core switching |
| Burst Mode Control | LBO pin selects linear or interleaved 4-word burst sequence; static input requiring no reconfiguration during operation |
| Power Management | ZZ input enables full sleep mode (IZZ ≤ 35 µA); ISB1 standby current ≤ 35 µA at f = 0 |
| Output Architecture | Flow-through (no output register); tCD = 7.5 ns max ensures minimal read-to-data latency for pipelined processors |
| Operating Temperature | –40°C to +85°C (industrial grade); validated for sustained operation in telecom chassis and industrial PLCs |
Pinout & Package
71V3577S75BGGI is packaged in a JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm body, with 0.5 mm pitch. Pin 1 marked by corner notch; thermal pad not present.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | Synchronous inputs latched on rising CLK edge with ADSP/ADSC assertion; A0–A16 used for 128K×36 mode |
| CLK | System Clock Input | Single-ended CMOS clock; all synchronous timing referenced to rising edge; no internal PLL |
| CE, CS0, CS1 | Chip Enable / Selects | Three-input decode: CE=LOW, CS0=HIGH, CS1=LOW enables device; allows multi-chip memory banking |
| GW, BWE, BW1–BW4 | Write Control Inputs | GW overrides BWx; BWE gates BW1–BW4; each BWx controls one 9-bit byte (BW1→I/O0–7 + I/OP1) |
| ADV, ADSP, ADSC | Burst & Address Status | ADV advances burst counter; ADSP (processor) and ADSC (cache) load address register synchronously |
| LBO, ZZ, OE | Mode & Output Control | LBO=LOW → linear burst; ZZ=HIGH → full sleep (IZZ ≤ 35 µA); OE=LOW → output drivers enabled |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O | 36-bit bidirectional bus; registered input path, flow-through output path; no output latch |
| VDD, VDDQ, VSS | Power & Ground | Dedicated VDD (core), VDDQ (I/O), and multiple VSS pins for noise isolation and signal integrity |
Key Features
| Feature | Design Value |
|---|---|
| Flow-through output architecture | Eliminates output register delay; delivers first data word within 7.5 ns of CLK rise - critical for zero-wait-state CPU interfaces |
| Configurable 4-word burst mode | Linear or interleaved addressing via LBO pin; supports cache-line-aligned reads without external address generation logic |
| Single-cycle deselect | Device enters high-Z output state within one CLK cycle after chip disable - prevents bus contention in multi-SRAM systems |
| Byte-selectable write capability | Four independent 9-bit write enables (BW1–BW4) allow partial-word updates without read-modify-write overhead |
| Industrial temperature support | Guaranteed operation from –40°C to +85°C with full AC/DC specs - qualified for base station RF modules and motor drives |
Applications
| Telecom Line Card Buffering | Real-Time DSP Data Memory |
|---|---|
|
Use Scenario: High-speed packet buffering in 10G Ethernet PHY interface ASICs where deterministic latency is required. IC Role / Device Role / Timing Role: Primary synchronous data buffer between MAC and PHY layers; handles 117 MHz burst reads/writes with sub-8 ns tCD. Use Value: Flow-through output eliminates pipeline stalls; single-cycle deselect prevents bus turnaround delays during packet boundary transitions. |
Use Scenario: Real-time coefficient storage and sample buffering in FPGA-based motor control DSP subsystems. IC Role / Device Role / Timing Role: Dual-port accessible memory for simultaneous instruction fetch and data streaming; burst mode aligns with 4-sample FIR filter taps. Use Value: Linear burst mode matches sequential coefficient access; industrial temp rating ensures reliability in enclosed drive enclosures. |
| Industrial PLC I/O Module Cache | Avionics Sensor Data Acquisition |
|
Use Scenario: Local cache for distributed I/O scan data in modular programmable logic controllers operating in factory environments. IC Role / Device Role / Timing Role: High-reliability SRAM storing 128K words of process variable snapshots; accessed via deterministic synchronous bus. Use Value: ZZ sleep mode reduces idle power to ≤35 µA; robust VDD/VDDQ separation maintains I/O integrity amid EMI-rich plant floors. |
Use Scenario: Buffered sensor fusion data storage in DO-254-compliant flight control units processing inertial measurement unit (IMU) streams. IC Role / Device Role / Timing Role: Radiation-tolerant (by design heritage) SRAM holding time-critical ADC samples prior to CRC-checked transfer to safety MCU. Use Value: Guaranteed –40°C to +85°C operation meets RTCA/DO-160 Section 22 environmental requirements; no internal refresh needed. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1375DV33-7BBAXC | 128K × 36, 7 ns commercial-only (0°C to +70°C); uses different burst control (MODE pin vs. LBO); no ZZ sleep mode | Lacks industrial temp rating and full sleep mode - unsuitable for uncooled embedded deployments | Select only for cost-sensitive commercial systems where ambient temperature stays below 70°C and low-power sleep is unnecessary |
| AS7C3128PFSIG-75 | 128K × 36, 75 MHz max (13.3 ns), asynchronous interface; no burst counter or ADV/LBO logic; 3.3V only | No synchronous timing or burst capability - requires external address sequencer for multi-word transfers | Use when system clock domain is unavailable or when legacy asynchronous bus architecture must be preserved |
Compared with CY7C1375DV33-7BBAXC and AS7C3128PFSIG-75, the 71V3577S75BGGI uniquely combines industrial temperature operation, hardware burst sequencing, flow-through latency, and active sleep mode - making it the only choice for thermally constrained, high-throughput synchronous memory subsystems.
Availability
71V3577S75BGGI is available at Aetrix Electronics and suitable for telecom infrastructure, industrial automation, and avionics applications requiring stable component supply, long-term lifecycle assurance, and traceable sourcing from authorized channels.
Supply support for 71V3577S75BGGI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.
The 71V3577S series belongs to Renesas' high-speed synchronous SRAM product line, designed specifically for low-latency, burst-capable memory interfacing in network processors, DSPs, and FPGA-based real-time systems.
FAQ
What is the maximum clock frequency supported by the 71V3577S75BGGI at industrial temperature?
The 71V3577S75BGGI supports up to 117 MHz (tCYC = 8.5 ns) across the full industrial temperature range of –40°C to +85°C. This is verified per AC Electrical Characteristics Table 16 in the official Renesas datasheet revision 6.42. The 6.5 ns speed grade (133 MHz) is restricted to commercial temperature and TQFP packaging only - not applicable to the 71V3577S75BGGI.
Does the 71V3577S75BGGI support both 128K × 36 and 256K × 18 configurations?
Yes, the 71V3577S75BGGI is configurable as either 128K × 36 or 256K × 18 depending on address pin usage and system wiring. In 128K × 36 mode, A0–A16 are used for addressing; in 256K × 18 mode, A0–A17 are active and data width is halved. Pin configurations for both modes are explicitly shown in Figures 02a and 02b of the datasheet.
How does the LBO pin affect burst addressing behavior in the 71V3577S75BGGI?
The LBO pin selects between linear (LBO = LOW) and interleaved (LBO = HIGH) burst sequences for the internal 2-bit counter driving A0/A1 during burst reads/writes. Linear mode increments A0/A1 as 00→01→10→11; interleaved follows 00→01→11→10. LBO is sampled at power-up and must remain static during operation - changing it mid-burst causes undefined behavior.
What is the power consumption of the 71V3577S75BGGI in full sleep mode (ZZ = HIGH)?
In full sleep mode with ZZ = HIGH, the 71V3577S75BGGI draws ≤35 µA (max) at VDD = 3.465 V and TA = +85°C, as specified in DC Electrical Characteristics Table 09a. This ultra-low IZZ enables battery-backed retention in fail-safe industrial controllers and extends hold-up time in backup power designs.
Can the 71V3577S75BGGI perform partial-byte writes without disturbing adjacent data?
Yes - the 71V3577S75BGGI supports true partial-byte writes via BW1–BW4 (each controlling a 9-bit byte) gated by BWE. When BWE = LOW and only BW1 = LOW, only I/O0–I/O7 and I/OP1 are written; other bytes retain prior data. This eliminates read-modify-write cycles and reduces bus traffic in protocol stack implementations.
71V3577S75BGGI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 119-BGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 4.5Mbit
- Memory Organization:
- 128K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 117 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 7.5 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 119-PBGA (14x22)
71V3577S75BGGI FAQ
1.How can I place an order for 71V3577S75BGGI through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V3577S75BGGI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V3577S75BGGI reliable?
The price and inventory of 71V3577S75BGGI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V3577S75BGGI is usually 5 days.
3.What payment methods are accepted for 71V3577S75BGGI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V3577S75BGGI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 71V3577S75BGGI?
71V3577S75BGGI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V3577S75BGGI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V3577S75BGGI?
For technical support, including 71V3577S75BGGI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V3577S75BGGI requirements.
6.How does Aetrix verify that 71V3577S75BGGI is sourced from the original manufacturer or authorized distributors?
All 71V3577S75BGGI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V3577S75BGGI meets industry standards.
7.What is the process for return or replacement of 71V3577S75BGGI?
All 71V3577S75BGGI units undergo pre-shipment inspection (PSI). If there is an issue with 71V3577S75BGGI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V3577S75BGGI part is unused and in its original packaging.
Return procedure for 71V3577S75BGGI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V3577S75BGGI Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
-
AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
