Renesas 71V3577S75BGGI8

Overview

71V3577S75BGGI8 from Renesas Electronics is a 128K × 36-bit (4.608 Mb), 3.3V synchronous SRAM with flow-through output architecture, 7.5 ns access time at up to 117 MHz clock frequency, and industrial temperature range (–40°C to +85°C). It supports linear/interleaved burst mode via LBO pin, single-cycle deselect, and self-timed write using GW/BWE/BWx controls - deployed in high-speed cache buffers and network packet memory subsystems.

For engineers reviewing the 71V3577S75BGGI8 datasheet, 71V3577S75BGGI8 pinout, 71V3577S75BGGI8 application, or 71V3577S75BGGI8 equivalent, key selection criteria include its TQFP-100 and BGA-119 package options, 3.3V core/I/O supply compatibility, flow-through read latency, burst counter behavior, and industrial-grade power-down (ZZ) and standby current specs.

Technical Context

This SRAM implements a synchronous, register-based address/data input path with no output register - enabling true flow-through read timing where data appears on I/O pins after tCD delay from CLK rising edge. Burst addressing is managed by an internal binary counter synchronized to ADV, with sequence order determined statically by LBO level.

Write operations support global (GW) or byte-selective (BW1–BW4) control under BWE gating, with asynchronous OE and ZZ inputs enabling output disable and full sleep mode respectively. The device uses dual power domains (VDD = 3.3V core, VDDQ = 3.3V I/O) and meets JEDEC-standard timing for commercial and industrial grades.

Key Specifications

Pinout & Package

Packaged in JEDEC-standard 119-ball fine-pitch BGA (BGG119), footprint code BGGI8 denotes industrial-grade, Pb-free, RoHS-compliant 119-ball grid array with 1.0 mm pitch and 12 mm × 12 mm body.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1371DV33-7BBXC and IS61WV102432ALL-7BL, the 71V3577S75BGGI8 uniquely delivers 36-bit width with configurable burst order in industrial temperature grade - critical for legacy bus architectures and deterministic cache implementations requiring exact word alignment.

Availability

71V3577S75BGGI8 is available at Aetrix Electronics and suitable for network packet buffering, high-speed cache memory, telecom line card memory, and industrial motion controller buffer applications requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for 71V3577S75BGGI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The 71V3577S family targets high-performance embedded systems requiring deterministic, low-latency memory with industrial reliability - especially in networking, test equipment, and real-time control.

FAQ

What is the maximum clock frequency supported by the 71V3577S75BGGI8 at industrial temperature?

The 71V3577S75BGGI8 supports up to 117 MHz clock frequency at –40°C to +85°C, corresponding to a 7.5 ns access time. This speed grade is validated across full industrial voltage (3.135 V–3.465 V) and temperature range, with timing parameters including tCYC = 8.5 ns min and tCD = 7.5 ns max.

Does the 71V3577S75BGGI8 support both linear and interleaved burst modes?

Yes, the 71V3577S75BGGI8 supports both burst modes via the LBO (Linear Burst Order) pin: LBO = LOW selects linear sequence; LBO = HIGH selects interleaved sequence. The pin is asynchronous and must remain static during operation - it is internally pulled to VDD if left unconnected.

What package type and ball count does the 71V3577S75BGGI8 use?

The 71V3577S75BGGI8 uses a 119-ball fine-pitch BGA (BGG119) package with 1.0 mm pitch and 12 mm × 12 mm body size. The "BGGI8" suffix confirms industrial temperature grade, Pb-free construction, and RoHS compliance per JEDEC MO-270AB standard.

How does the flow-through output architecture of the 71V3577S75BGGI8 affect read timing?

The 71V3577S75BGGI8 has no output register - data flows directly from the memory array to I/O pins after tCD delay (max 7.5 ns) from the rising CLK edge. This eliminates pipeline latency, enabling immediate use of read data in the same cycle - essential for cache-line fill and real-time buffering applications.

Can the 71V3577S75BGGI8 operate with separate core and I/O supply voltages?

Yes, the 71V3577S75BGGI8 uses independent power domains: VDD (3.3V ±5%) supplies the core logic and address registers, while VDDQ (3.3V ±5%) powers the I/O drivers and data path. These must be decoupled separately to maintain signal integrity and meet AC timing specifications.