Renesas 71V3577S75BGI
- Part No.:
- 71V3577S75BGI
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 119-BGA
- Datasheet:
-
71V3577S75BGI.pdf
- Description:
- IC SRAM 4.5MBIT PAR 119PBGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
71V3577S75BGI from Renesas Electronics is a 128K × 36-bit (4.608 Mb), 3.3V synchronous SRAM with flow-through output architecture, 7.5 ns access time at up to 117 MHz clock frequency, and industrial temperature range (–40°C to +85°C). It supports linear/interleaved burst modes via LBO input, features self-timed write with global and byte-level write enables, and is used in high-speed cache buffers and network packet memory subsystems.
For engineers reviewing the 71V3577S75BGI datasheet, 71V3577S75BGI pinout, 71V3577S75BGI application, or 71V3577S75BGI equivalent, key selection criteria include TQFP-100 package compatibility, 3.3V core/I/O supply, burst counter timing behavior, single-cycle deselect capability, and industrial-grade power-down current (ISB1 = 35 mA).
Technical Context
This SRAM implements a synchronous, register-based address/data path with no output register - enabling true flow-through read latency. The internal burst address counter advances on ADV=LOW and selects sequence order (linear or interleaved) based on static LBO state, with wraparound after four words.
Write control uses hierarchical enable logic: GW overrides BWE, and BWE gates BW1–BW4; all synchronous inputs (CE, CS0, CS1, ADSP, ADSC, ADV, GW, BWE, BWx) are sampled on CLK rising edge with defined setup/hold times. ZZ enables asynchronous sleep mode with guaranteed data retention and 35 µA ISB2 current at fMAX.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 128K × 36-bit (4.608 Mbit); supports 256K × 18-bit via address remapping |
| Access Time / Max Frequency | 7.5 ns / 117 MHz (commercial & industrial grades); 6.5 ns only in commercial TQFP |
| Supply Voltages | VDD = 3.3 V ±5% (core), VDDQ = 3.3 V ±5% (I/O); separate power domains |
| Burst Mode Control | LBO pin selects linear (LBO = LOW) or interleaved (LBO = HIGH) 4-word burst sequence |
| Power-Down Current | IZZ = 35 µA (industrial temp); ZZ = HIGH disables internal clock and minimizes active leakage |
| Operating Temperature | –40°C to +85°C (industrial grade); validated across full voltage and timing margins |
| Package | JEDEC-standard 100-pin TQFP (14 mm × 20 mm); lead-free and RoHS-compliant |
Pinout & Package
71V3577S75BGI is packaged in a 100-pin thin quad flatpack (TQFP), JEDEC MO-140AC, 0.5 mm pitch, 14 mm × 20 mm body size. Pin 1 marked by corner notch; top-side marking includes "71V3577S75BGI" and date code.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | Synchronous inputs latched on rising CLK edge with ADSP/ADSC; A0–A16 used for 128K×36, A0–A17 for 256K×18 |
| CLK | System Clock Input | Single-ended CMOS clock; all synchronous timing referenced to rising edge |
| CE, CS0, CS1 | Chip Enable/Select | Three-input decode: CE=LOW, CS0=HIGH, CS1=LOW enables device; supports multi-chip select decoding |
| GW, BWE, BW1–BW4 | Write Control Inputs | GW writes all 36 bits; BWE enables byte write; BW1–BW4 select 9-bit bytes (I/O0–7+I/OP1, etc.) |
| ADV, ADSP, ADSC | Burst & Address Status | ADSP/ADSC load address register; ADV=LOW increments internal burst counter for next word |
| LBO, ZZ, OE | Mode & Output Control | LBO sets burst order statically; ZZ=HIGH enters low-power sleep; OE=LOW enables flow-through outputs |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O | 36-bit bidirectional bus; registered input path, unregistered (flow-through) output path; VDDQ-referenced |
| VDD, VDDQ, VSS | Power & Ground | VDD (core), VDDQ (I/O), and VSS pins require local decoupling; separate VDD/VDDQ allows I/O voltage margining |
Key Features
| Feature | Design Value |
|---|---|
| Flow-through output architecture | Zero-cycle output register eliminates read latency penalty; tCD = 7.5 ns directly from CLK edge |
| Single-cycle deselect | Device enters standby within one clock cycle of CE/CS deassertion - critical for burst termination in cache coherency |
| Configurable burst order (LBO) | Hardware-selectable linear or interleaved 4-word burst sequences without software overhead or timing penalty |
| Self-timed write with byte granularity | GW/BWE/BWx hierarchy enables full-word, partial-word, or per-byte writes - reducing bus contention and power spikes |
| Industrial-grade sleep mode (ZZ) | IZZ = 35 µA at VDD = 3.465 V; retains data indefinitely while disabling clock tree and array bias |
| 100-pin TQFP with JEDEC compliance | Standard footprint enables drop-in replacement in legacy designs; compatible with automated SMT assembly and reflow profiles |
Applications
| Network Packet Buffer | Real-Time DSP Cache |
|---|---|
|
Use Scenario: Storing incoming/outgoing Ethernet frames in Layer 2/3 switches before forwarding or classification. IC Role / Device Role / Timing Role: High-bandwidth, low-latency buffer between MAC and switch fabric; handles 10 Gbps line-rate bursts. Use Value: 7.5 ns tCD and 117 MHz operation sustain >400 MB/s sustained read/write throughput; flow-through output avoids pipeline stalls. |
Use Scenario: Serving as L1/L2 instruction/data cache for TI C6000 or Analog Devices SHARC processors in radar signal processing. IC Role / Device Role / Timing Role: Synchronous SRAM interfaced directly to processor's EMIF; provides deterministic access for FFT and FIR kernels. Use Value: Single-cycle deselect and burst counter support rapid context switching; industrial temp rating ensures reliability in avionics enclosures. |
| Industrial PLC Memory Module | Medical Imaging Frame Store |
|
Use Scenario: Holding real-time I/O mapping tables and ladder logic state variables in programmable logic controllers operating in factory environments. IC Role / Device Role / Timing Role: Non-volatile shadow RAM (paired with battery-backed SRAM or FRAM) for fast state reload after power loss. Use Value: ZZ sleep mode reduces idle power to 35 µA; –40°C to +85°C rating matches DIN rail enclosure thermal profile. |
Use Scenario: Temporary storage of uncompressed CT/MRI scan lines during reconstruction pipeline in diagnostic imaging systems. IC Role / Device Role / Timing Role: Dual-port-capable buffer (via time-multiplexed reads/writes) feeding FPGA-based back-end processors. Use Value: 128K × 36 organization aligns with 16-bit pixel + 4-bit metadata packing; 3.3V I/O simplifies interface to Xilinx Kintex-7 transceivers. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1371DV33-7BBXC | 128K × 36, 7 ns, 144-ball BGA only; no TQFP option; higher IDD (320 mA @ 133 MHz) | Requires PCB redesign for BGA; better suited for space-constrained, high-density boards vs. TQFP-reliant legacy systems | Select when board area is constrained and BGA assembly capability exists; avoid if TQFP footprint must be preserved. |
| AS7C3256P-10JCN | 32K × 36, 10 ns, 100-pin TQFP; lower density and slower speed; no burst counter or LBO | Lacks burst mode and flow-through output; suitable only for non-burst, low-throughput control memory | Choose only for cost-sensitive, non-performance-critical applications where 128K×36 capacity and 7.5 ns timing are unnecessary. |
Compared with CY7C1371DV33-7BBXC and AS7C3256P-10JCN, the 71V3577S75BGI uniquely delivers industrial-grade 7.5 ns performance in pin-compatible TQFP packaging with configurable burst sequencing - enabling direct upgrade paths in existing cache and buffer designs without layout change.
Availability
71V3577S75BGI is available at Aetrix Electronics and suitable for network packet buffering, real-time DSP caching, industrial PLC memory modules, and medical imaging frame stores requiring stable component supply across extended product lifecycles.
Supply support for 71V3577S75BGI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.
The 71V3577S series targets high-speed embedded memory subsystems demanding deterministic timing, low-power sleep, and industrial reliability - particularly in networking, test equipment, and real-time control.
FAQ
What is the maximum clock frequency supported by the 71V3577S75BGI at industrial temperature?
The 71V3577S75BGI supports up to 117 MHz clock frequency with 7.5 ns access time across the full industrial temperature range (–40°C to +85°C). This is validated per AC Electrical Characteristics Table 16 in the official Renesas datasheet (Rev. 6.42, Sep 2023), and applies to both 128K × 36 and 256K × 18 configurations in the TQFP package.
Does the 71V3577S75BGI support burst mode, and how is it configured?
Yes, the 71V3577S75BGI supports 4-word synchronous burst mode controlled by ADV and LBO pins. ADV=LOW initiates burst advance; LBO selects linear (LBO=LOW) or interleaved (LBO=HIGH) sequence per Tables 14–15. The burst counter is fully hardware-based and requires no software initialization - the 71V3577S75BGI executes burst reads/writes autonomously once triggered.
What is the function of the ZZ pin on the 71V3577S75BGI, and what power savings does it provide?
The ZZ pin on the 71V3577S75BGI enables asynchronous sleep mode: when driven HIGH, it gates the internal clock and reduces supply current to IZZ = 35 µA (industrial grade). Data retention is guaranteed during sleep. Unlike standby modes requiring chip deselect, ZZ operates independently - allowing the 71V3577S75BGI to enter ultra-low-power state even while selected, critical for energy-sensitive applications.
Can the 71V3577S75BGI operate with different core and I/O voltages?
No - the 71V3577S75BGI requires matched 3.3 V ±5% supplies on both VDD (core) and VDDQ (I/O). The datasheet specifies VDD and VDDQ must track within ±0.1 V (Table 04), and VIH/VIL thresholds are referenced separately to each rail. Operating VDD and VDDQ at different nominal values violates Absolute Maximum Ratings and may cause functional failure or accelerated wear.
Is the 71V3577S75BGI pin-compatible with other devices in the 71V3577/79 family?
Yes - the 71V3577S75BGI shares identical 100-pin TQFP pinout with all speed grades (e.g., 71V3577S85BGI) and configuration variants (128K×36 and 256K×18) in the same package. Pin functions, power/ground locations, and timing interfaces are fully consistent; only AC timing parameters and temperature grading differ. This enables drop-in speed upgrades without PCB modification.
71V3577S75BGI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 119-BGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 4.5Mbit
- Memory Organization:
- 128K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 117 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 7.5 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 119-PBGA (14x22)
71V3577S75BGI FAQ
1.How can I place an order for 71V3577S75BGI through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V3577S75BGI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V3577S75BGI reliable?
The price and inventory of 71V3577S75BGI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V3577S75BGI is usually 5 days.
3.What payment methods are accepted for 71V3577S75BGI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V3577S75BGI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 71V3577S75BGI?
71V3577S75BGI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V3577S75BGI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V3577S75BGI?
For technical support, including 71V3577S75BGI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V3577S75BGI requirements.
6.How does Aetrix verify that 71V3577S75BGI is sourced from the original manufacturer or authorized distributors?
All 71V3577S75BGI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V3577S75BGI meets industry standards.
7.What is the process for return or replacement of 71V3577S75BGI?
All 71V3577S75BGI units undergo pre-shipment inspection (PSI). If there is an issue with 71V3577S75BGI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V3577S75BGI part is unused and in its original packaging.
Return procedure for 71V3577S75BGI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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