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Renesas 71V3577S75BGI8
- Part No.:
- 71V3577S75BGI8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 119-BGA
- Datasheet:
-
71V3577S75BGI8.pdf
- Description:
- IC SRAM 4.5MBIT PAR 119PBGA
- Quantity:
- Payment:
- Shipping:
Inventory:1,491
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Product details
Overview
71V3577S75BGI8 from Renesas Electronics is a 128K × 36-bit (4.608 Mb), 3.3V synchronous SRAM with flow-through output architecture, 7.5 ns access time at up to 117 MHz clock frequency, and industrial temperature support (–40°C to +85°C). It features burst counter logic, linear/interleaved burst mode selection via LBO, and single-cycle deselect for high-speed cache and buffer applications in networking and telecom systems.
For engineers reviewing the 71V3577S75BGI8 datasheet, 71V3577S75BGI8 pinout, 71V3577S75BGI8 application, or 71V3577S75BGI8 equivalent, key selection criteria include its TQFP-100 package, synchronous 3.3V I/O interface, flow-through read timing, self-timed write with GW/BWE/BWx controls, and compatibility with burst-addressed processor/cache controllers.
Technical Context
This SRAM implements a synchronous, register-controlled architecture with separate address, data input, and control registers - but no output register, enabling true flow-through read latency. The internal burst counter advances on ADV=LOW and supports four-word bursts defined by LBO state (linear or interleaved), with wrap-around behavior after the fourth address.
Write operations are fully synchronous and support global (GW) or byte-selectable (BW1–BW4) modes, gated by BWE. Power management includes asynchronous ZZ sleep mode (≤35 µA ISB2, ≤35 µA IZZ) and CMOS standby (30–35 mA ISB1), all operating within strict 3.135–3.465 V core/I/O supply tolerances.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 128K × 36-bit (4.608 Mbit); supports 256K × 18-bit configuration via address mapping |
| Access Time / Max Frequency | 7.5 ns / 117 MHz (commercial & industrial temp ranges); 6.5 ns / 133 MHz only in TQFP, commercial grade |
| Supply Voltages | VDD = VDDQ = 3.3 V ±5% (3.135–3.465 V); separate core and I/O rails |
| Burst Mode Control | LBO pin selects linear or interleaved 4-word burst sequence; static configuration, must not change during operation |
| Power-Down Current | IZZ ≤ 35 µA (industrial temp); full sleep mode activated by asynchronous ZZ HIGH |
| Output Architecture | Flow-through (no output register); tCD = 7.5 ns max clock-to-data; tOE = 3.5 ns max output enable access |
| Package & Temp Range | JEDEC-standard 100-pin TQFP (14 mm × 20 mm); industrial –40°C to +85°C operation |
Pinout & Package
71V3577S75BGI8 is packaged in a JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm body, with 0.5 mm pitch. Pin 1 is marked by a dot or beveled corner per standard orientation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | Synchronous inputs latched on rising CLK edge with ADSP/ADSC; A0–A16 used for 128K×36, A0–A17 for 256K×18 |
| CLK | Clock Input | Primary timing reference; all synchronous operations referenced to rising edge |
| CE, CS0, CS1 | Chip Enable / Selects | Three-level chip select hierarchy; CE active LOW, CS0 active HIGH, CS1 active LOW |
| GW, BWE, BW1–BW4 | Write Controls | GW enables full 36-bit write; BWE gates BWx; BW1–BW4 each control one 9-bit byte (I/O0–7/I/OP1 through I/O24–31/I/OP4) |
| ADV, ADSP, ADSC | Burst & Address Status | ADV advances burst counter; ADSP (processor) and ADSC (cache) load address register synchronously |
| LBO, ZZ, OE | Mode & Output Control | LBO selects burst order (asynchronous); ZZ enables sleep (asynchronous HIGH); OE enables outputs (asynchronous LOW) |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O | 36-bit bidirectional bus; registered input path, flow-through output path; no output register |
| VDD, VDDQ, VSS | Power & Ground | VDD = 3.3V core; VDDQ = 3.3V I/O; multiple VSS pins distributed for noise reduction |
Key Features
| Feature | Design Value |
|---|---|
| Flow-through output architecture | Eliminates output register delay: tCD = 7.5 ns max, enabling zero-cycle-read latency in burst sequences |
| Configurable 4-word burst mode | LBO pin selects linear or interleaved addressing; supports cache line fills without external address generation |
| Single-cycle deselect capability | Chip deactivation completes within one clock cycle, minimizing bus turnaround overhead in multi-device systems |
| Flexible write control hierarchy | Global (GW), byte-enable (BWE), and individual byte (BW1–BW4) write options allow precise 9-bit granularity writes |
| Low-power sleep mode | Asynchronous ZZ input reduces ICC to ≤35 µA while retaining data; no clock required during retention |
Applications
| Networking Packet Buffers | Telecom Line Card Caches |
|---|---|
|
Use Scenario: High-throughput packet buffering in Ethernet switches and routers handling 10 Gbps+ line rates. IC Role / Device Role / Timing Role: Synchronous SRAM acting as first-level packet buffer with burst-aligned read/write to match MAC/PHY DMA engines. Use Value: 7.5 ns access + flow-through output ensures deterministic sub-8 ns read latency across 4-word bursts, reducing packet jitter. |
Use Scenario: Real-time frame buffering in SONET/SDH line cards requiring low-latency access to ATM or GFP payloads. IC Role / Device Role / Timing Role: Burst-mode SRAM interfacing directly with framer ASICs using ADV/ADSP handshake protocol. Use Value: Linear burst sequence (LBO=LOW) aligns with sequential payload addressing, eliminating external address increment logic. |
| Industrial PLC Data Tables | Test Equipment Pattern Memory |
|
Use Scenario: Deterministic I/O mapping and real-time control table storage in programmable logic controllers operating at –40°C to +85°C. IC Role / Device Role / Timing Role: Industrial-grade SRAM providing reliable, fast-access memory for scan-cycle variable tables and status registers. Use Value: Guaranteed operation across full industrial temperature range with ≤35 µA sleep current extends system uptime during idle cycles. |
Use Scenario: High-speed pattern generation and capture in automated test equipment (ATE) requiring repeatable 117 MHz waveform playback. IC Role / Device Role / Timing Role: Synchronous SRAM storing stimulus/response vectors accessed via burst reads aligned to pattern clock. Use Value: Self-timed write with GW/BWE control allows precise vector strobing; tCD = 7.5 ns enables tight setup/hold margins at 117 MHz. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 71V3577S80BGI8 | Slower 8.0 ns access time (100 MHz max); identical pinout, package, and feature set | Lower-frequency systems where timing margin or power optimization outweighs peak bandwidth needs | Select when 100 MHz clock rate suffices and lower IDD (180 mA vs. 255 mA at fMAX) improves thermal design |
| 71V3579S75BGI8 | 256K × 18 organization (same density); lacks BW3/BW4 pins; different address pin count (A0–A17 vs. A0–A16) | Systems requiring 18-bit data bus width or simplified byte-write control (only BW1/BW2 supported) | Choose for 18-bit interfaces or when reduced pin count simplifies layout; verify address mapping compatibility |
Compared with 71V3577S80BGI8 and 71V3579S75BGI8, the 71V3577S75BGI8 delivers optimal balance of speed (117 MHz), 36-bit bus width, and full 4-byte write control - making it preferred for high-bandwidth 32/36-bit datapath designs requiring deterministic burst timing.
Availability
71V3577S75BGI8 is available at Aetrix Electronics and suitable for networking packet buffers, telecom line card caches, and industrial PLC data tables requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for 71V3577S75BGI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.
The 71V3577S family targets high-performance embedded systems requiring low-latency, burst-capable SRAM - specifically designed for cache, buffer, and FIFO applications in networking, telecom, and real-time control equipment.
FAQ
What is the maximum clock frequency supported by the 71V3577S75BGI8?
The 71V3577S75BGI8 supports up to 117 MHz clock frequency with 7.5 ns access time across both commercial and industrial temperature ranges. This timing is guaranteed under VDD/VDDQ = 3.3 V ±5% and specified load conditions. Note that the faster 6.5 ns / 133 MHz variant is only offered in commercial-grade TQFP packages and is not applicable to the 71V3577S75BGI8.
Does the 71V3577S75BGI8 support both linear and interleaved burst modes?
Yes, the 71V3577S75BGI8 supports both linear and interleaved 4-word burst sequences via the LBO (Linear Burst Order) pin. When LBO = LOW, linear addressing is selected; when LBO = HIGH, interleaved addressing is used. LBO is an asynchronous static input and must remain stable during device operation to prevent burst sequence corruption.
How does the flow-through output architecture of the 71V3577S75BGI8 affect read timing?
The 71V3577S75BGI8 uses a flow-through output path with no output register, meaning data appears at the I/O pins after tCD = 7.5 ns max from the rising CLK edge. This eliminates pipeline delay, enabling immediate use of burst-read data in the same cycle - critical for cache-line fill and zero-wait-state processor interfaces.
Can the 71V3577S75BGI8 operate in industrial temperature conditions?
Yes, the 71V3577S75BGI8 is qualified for industrial temperature operation from –40°C to +85°C. Its DC and AC specifications - including IDD, ISB1, IZZ, tCD, tOE, and setup/hold times - are fully guaranteed across this range. The part suffix "BGI8" explicitly denotes industrial-grade TQFP packaging.
What is the function of the ZZ pin on the 71V3577S75BGI8?
The ZZ pin on the 71V3577S75BGI8 is an asynchronous sleep mode input. When driven HIGH, it gates the internal clock and reduces supply current to ≤35 µA (IZZ) while maintaining full data retention. ZZ has an internal pull-down, so it defaults to active mode if left unconnected. Recovery time tZZR is 100 ns minimum after ZZ returns LOW.
71V3577S75BGI8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 119-BGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 4.5Mbit
- Memory Organization:
- 128K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 117 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 7.5 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 119-PBGA (14x22)
71V3577S75BGI8 FAQ
1.How can I place an order for 71V3577S75BGI8 through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V3577S75BGI8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V3577S75BGI8 reliable?
The price and inventory of 71V3577S75BGI8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V3577S75BGI8 is usually 5 days.
3.What payment methods are accepted for 71V3577S75BGI8?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V3577S75BGI8 transactions.
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4.How is shipping managed for 71V3577S75BGI8?
71V3577S75BGI8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V3577S75BGI8 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V3577S75BGI8?
For technical support, including 71V3577S75BGI8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V3577S75BGI8 requirements.
6.How does Aetrix verify that 71V3577S75BGI8 is sourced from the original manufacturer or authorized distributors?
All 71V3577S75BGI8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V3577S75BGI8 meets industry standards.
7.What is the process for return or replacement of 71V3577S75BGI8?
All 71V3577S75BGI8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V3577S75BGI8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V3577S75BGI8 part is unused and in its original packaging.
Return procedure for 71V3577S75BGI8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V3577S75BGI8 Tags
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M24C02-WMN6TP
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AT24C02C-XHM-T
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AT21CS01-STUM10-T
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24LC01BT-I/OT
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M24C02-FMC6TG
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AT24CS02-SSHM-T
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93LC46BT-I/OT
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AT24C04C-SSHM-T
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24LC01BT-I/SN
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24AA02UIDT-I/OT
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