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Renesas 71V3577S75BQ
- Part No.:
- 71V3577S75BQ
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 165-TBGA
- Datasheet:
-
71V3577S75BQ.pdf
- Description:
- IC SRAM 4.5MBIT PAR 165CABGA
- Quantity:
- Payment:
- Shipping:
Inventory:1,745
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Product details
Overview
71V3577S75BQ from Renesas Electronics is a 128K × 36-bit (4.608 Mb), 3.3V synchronous SRAM with flow-through outputs, burst counter, and single-cycle deselect. It supports 7.5 ns access time at up to 117 MHz clock frequency, operates across industrial temperature range (–40°C to +85°C), and uses JEDEC-standard 100-pin TQFP packaging. It serves as high-bandwidth cache or buffer memory in networking line cards and telecom baseband processors.
For engineers reviewing the 71V3577S75BQ datasheet, 71V3577S75BQ pinout, 71V3577S75BQ application, or 71V3577S75BQ equivalent, key selection criteria include burst mode support (linear/interleaved), flow-through output architecture, 3.3V I/O compatibility, ZZ-controlled sleep mode, and TQFP-100 package footprint with verified pin mapping for PCB layout.
Technical Context
The 71V3577S75BQ implements a synchronous, clock-driven interface with registered address and data inputs, but unregistered (flow-through) outputs-enabling deterministic tCD timing without output register latency. Its internal burst address counter advances on ADV=LOW, generating four consecutive addresses per initial access using A0/A1 as LSBs.
Burst order is selected via static LBO pin: LOW enables linear sequence (00→01→10→11), HIGH enables interleaved (00→01→11→10). Write control supports global (GW) or byte-selectable (BW1–BW4 + BWE) modes, with self-timed write cycles gated by CE, CS0, CS1, ADSP/ADSC status signals.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 128K × 36-bit (4.608 Mbit); supports 256K × 18-bit mode via pin configuration |
| Access Time / Max Frequency | 7.5 ns / 117 MHz - guaranteed for commercial and industrial temp ranges in TQFP package |
| Supply Voltages | VDD = 3.3 V ±5% (core), VDDQ = 3.3 V ±5% (I/O) - separate rails enable noise isolation |
| Burst Mode Control | LBO pin selects linear or interleaved 4-word burst sequence - no external logic required |
| Power Management | ZZ input enables full sleep mode (IZZ ≤ 35 µA); ISB1 standby current ≤ 35 mA |
| Output Architecture | Flow-through (no output register) - eliminates output clock-to-data skew; tCD = 7.5 ns max |
| Operating Temperature | –40°C to +85°C - qualified for industrial embedded systems with thermal cycling requirements |
Pinout & Package
Packaged in JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm body, 0.5 mm pitch. Pinout validated for 128K × 36 configuration per Renesas document 6450 drw 02a.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | Synchronous address latching on rising CLK edge with ADSP/ADSC assertion; A0–A16 used for 128K×36 |
| CLK | System Clock Input | Primary timing reference; all synchronous inputs referenced to rising edge |
| CE, CS0, CS1 | Chip Enable / Selects | Three-level decode (CE LOW + CS0 HIGH + CS1 LOW) enables device; supports multi-chip addressing |
| ADV | Burst Address Advance | Active-LOW signal that increments internal burst counter; HIGH suspends burst |
| LBO | Burst Order Selection | Static DC input: LOW = linear burst (00→01→10→11), HIGH = interleaved (00→01→11→10) |
| ZZ | Sleep Mode Control | Asynchronous HIGH disables internal clock and reduces supply current to ≤35 µA |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O (36-bit) | Registered input path; flow-through output path - no output register delay |
| GW, BWE, BW1–BW4 | Write Control Inputs | GW writes all 36 bits; BWE + BWx enable independent 9-bit byte writes (BW1 = I/O0–7 + I/OP1, etc.) |
Key Features
| Feature | Design Value |
|---|---|
| Flow-through output architecture | Eliminates output register latency - tCD matches access time (7.5 ns), critical for timing-critical burst reads |
| Single-cycle deselect | Device enters high-Z state within one clock cycle after chip disable - prevents bus contention in multi-SRAM systems |
| Configurable burst order (LBO) | Hardware-selectable linear or interleaved addressing - matches CPU/cache controller burst patterns without firmware overhead |
| Byte-write granularity (BW1–BW4) | Four independent 9-bit write lanes - enables efficient partial-word updates without read-modify-write cycles |
| Separate VDD/VDDQ supplies | Core and I/O power domains isolated - reduces switching noise coupling into sensitive analog or RF subsystems |
Applications
| Networking Line Cards | Telecom Baseband Processors |
|---|---|
Use Scenario: High-speed packet buffering in 10G/25G Ethernet switch fabric ASIC interfaces. IC Role / Device Role / Timing Role: Synchronous burst-access SRAM acting as first-level packet buffer between MAC and switch fabric, synchronized to 117 MHz system clock. Use Value: 7.5 ns tCD and flow-through outputs ensure deterministic latency for backpressure signaling and cut-through forwarding. | Use Scenario: Real-time channelization buffer in LTE/5G baseband FPGAs handling multiple parallel FFT/IFFT streams. IC Role / Device Role / Timing Role: Dual-port-capable (via CE/ADV sequencing) burst memory providing simultaneous read/write access to time-aligned symbol windows. Use Value: Linear burst mode (LBO=LOW) delivers sequential symbol data matching FFT output ordering without address calculation overhead. |
| Industrial PLC Motion Controllers | Radar Signal Processing Modules |
Use Scenario: Position trajectory lookup table storage in servo drive microcontrollers requiring jitter-free axis interpolation. IC Role / Device Role / Timing Role: Deterministic-latency SRAM holding precomputed motion profiles, accessed via burst reads triggered by timer interrupts. Use Value: Single-cycle deselect and ZZ sleep mode enable rapid context switching between motion segments while maintaining low average power. | Use Scenario: Chirp sample buffering in automotive radar SoCs performing real-time CFAR detection on 77 GHz FMCW returns. IC Role / Device Role / Timing Role: High-reliability burst memory storing ADC samples prior to DSP pipeline ingestion, operating across –40°C to +85°C. Use Value: Industrial temperature rating and 3.3V I/O compatibility ensure stable operation alongside radar transceivers without level-shifting. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 71V3577S80BQ | 8.0 ns access time (100 MHz max), same 128K×36 organization and TQFP-100 package | Lower frequency margin; higher power efficiency at reduced clock rates | Select when system clock ≤100 MHz and lower IDD (180 mA vs. 255 mA at 117 MHz) is prioritized |
| AS7C3256B-12JIN | Commercial-only 12 ns access (83 MHz), 32K×8 organization, SOJ-32 package - no burst or flow-through features | Non-burst, non-synchronous interface; requires external address sequencing logic | Use only in cost-sensitive, non-burst applications where 36-bit width and 117 MHz timing are not required |
Compared with 71V3577S80BQ and AS7C3256B-12JIN, the 71V3577S75BQ uniquely delivers 117 MHz burst performance with flow-through outputs in an industrial-grade TQFP package - essential for deterministic low-latency memory subsystems.
Availability
71V3577S75BQ is available at Aetrix Electronics and suitable for networking line cards, telecom baseband processors, and industrial PLC motion controllers requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for 71V3577S75BQ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.
The 71V3577S series targets high-performance embedded systems needing deterministic burst-access memory with industrial reliability - designed specifically for telecom, networking, and real-time control applications demanding sub-10 ns timing.
FAQ
What memory organization does the 71V3577S75BQ support?
The 71V3577S75BQ is organized as 128K × 36 bits (4.608 Mbit) in its default configuration. It also supports 256K × 18-bit mode through pin strapping (e.g., A17 usage), enabling flexible data bus width adaptation without changing the 71V3577S75BQ part number or package.
Does the 71V3577S75BQ require external termination resistors?
No, the 71V3577S75BQ does not require external termination resistors. Its CMOS I/O structure is designed for direct connection to 50 Ω transmission lines (per AC Test Load in Figure 1), and input/output capacitance is specified at ≤7 pF - compatible with standard PCB trace impedance without added termination.
How does the LBO pin affect burst addressing in the 71V3577S75BQ?
The LBO pin statically configures burst order: when pulled LOW, the 71V3577S75BQ executes linear burst (00→01→10→11); when pulled HIGH, it executes interleaved burst (00→01→11→10). This setting must remain stable during operation and directly maps to CPU or cache controller burst protocol requirements.
Can the 71V3577S75BQ operate in both commercial and industrial temperature ranges?
Yes, the 71V3577S75BQ is qualified for industrial temperature range (–40°C to +85°C) at 7.5 ns / 117 MHz speed grade. The "75" in 71V3577S75BQ explicitly denotes this industrial-speed bin - distinct from commercial-only 6.5 ns variants which are unavailable in this part number.
What is the function of the ADV pin during burst read operations in the 71V3577S75BQ?
The ADV pin controls burst progression: when ADV is LOW, the internal burst counter advances to the next address in sequence (linear or interleaved per LBO); when ADV is HIGH, burst is suspended and the same address repeats. This allows precise control over burst length and alignment without external address generation logic.
71V3577S75BQ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 165-TBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 4.5Mbit
- Memory Organization:
- 128K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 117 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 7.5 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-CABGA (13x15)
71V3577S75BQ FAQ
1.How can I place an order for 71V3577S75BQ through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V3577S75BQ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V3577S75BQ reliable?
The price and inventory of 71V3577S75BQ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V3577S75BQ is usually 5 days.
3.What payment methods are accepted for 71V3577S75BQ?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V3577S75BQ transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 71V3577S75BQ?
71V3577S75BQ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V3577S75BQ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V3577S75BQ?
For technical support, including 71V3577S75BQ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V3577S75BQ requirements.
6.How does Aetrix verify that 71V3577S75BQ is sourced from the original manufacturer or authorized distributors?
All 71V3577S75BQ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V3577S75BQ meets industry standards.
7.What is the process for return or replacement of 71V3577S75BQ?
All 71V3577S75BQ units undergo pre-shipment inspection (PSI). If there is an issue with 71V3577S75BQ, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V3577S75BQ part is unused and in its original packaging.
Return procedure for 71V3577S75BQ:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V3577S75BQ Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
Microchip Technology
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24AA02UIDT-I/OT
Microchip Technology
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AT24C08C-STUM-T
Microchip Technology
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