Renesas 71V3577S75BQ8

Overview

71V3577S75BQ8 from Renesas Electronics is a 128K × 36-bit (4.608 Mbit), 3.3V synchronous SRAM with flow-through output architecture, 7.5 ns access time at up to 117 MHz clock frequency, and burst counter support for cache-coherent systems. It features synchronous address latching via ADSP/ADSC, global and byte-level write control (GW/BW1–BW4), and linear/interleaved burst ordering via LBO pin.

For engineers reviewing the 71V3577S75BQ8 datasheet, 71V3577S75BQ8 pinout, 71V3577S75BQ8 application, or 71V3577S75BQ8 equivalent, this device is selected for high-bandwidth memory buffering in network processors, FPGA-based accelerators, and real-time DSP subsystems where single-cycle deselect, low-latency read-through, and deterministic burst timing are critical.

Technical Context

The 71V3577S75BQ8 implements a synchronous, register-controlled interface with no output registers-data flows directly from the memory array after tCD delay. Its internal burst counter advances on ADV=LOW and supports four-word bursts with address sequencing determined by LBO state (linear or interleaved) and A0/A1 bits.

All control inputs (CE, CS0, CS1, ADSP, ADSC, ADV, GW, BWE, BW1–BW4) are synchronous to CLK, while OE and ZZ are asynchronous. The device uses separate VDD (3.3 V core) and VDDQ (3.3 V I/O) supplies, enabling independent I/O voltage management and supporting JEDEC-compliant 3.3V signaling.

Key Specifications

Pinout & Package

Packaged in a JEDEC-standard 100-pin TQFP (14 mm × 20 mm), the 71V3577S75BQ8 supports 128K × 36-bit configuration with dedicated address (A0–A17), control (CE, CS0, CS1, ADV, ADSP, ADSC, GW, BWE, BW1–BW4, OE, ZZ, LBO), clock (CLK), and bidirectional data (I/O0–I/O31, I/OP1–I/OP4) pins. VDD, VDDQ, and VSS pins are distributed for low-noise power delivery.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1375DV33-133AXC and AS7C33128PFSIG, the 71V3577S75BQ8 uniquely combines industrial temperature support, hardware-configurable burst order, and full-sleep mode - making it optimal for ruggedized telecom and defense systems requiring both reliability and timing precision.

Availability

71V3577S75BQ8 is available at Aetrix Electronics and suitable for network infrastructure, FPGA acceleration, and real-time DSP applications requiring stable component supply, long-term lifecycle assurance, and traceable sourcing from authorized channels.

Supply support for 71V3577S75BQ8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The 71V3577S75BQ8 belongs to Renesas' high-performance synchronous SRAM product line, engineered for low-latency, burst-capable memory interfacing in demanding real-time systems such as routers, baseband units, and radar processors.

FAQ

What is the maximum operating frequency of the 71V3577S75BQ8?

The 71V3577S75BQ8 supports up to 117 MHz clock frequency with guaranteed 7.5 ns access time across both commercial and industrial temperature ranges. This speed is validated for the 128K × 36-bit configuration in the 100-pin TQFP package, and timing compliance is ensured under worst-case VDD = 3.135 V and TA = +85°C conditions.

Does the 71V3577S75BQ8 support both linear and interleaved burst modes?

Yes, the 71V3577S75BQ8 supports both burst modes via the LBO (Linear Burst Order) pin: LBO = LOW selects linear burst (00→01→10→11), and LBO = HIGH selects interleaved burst (00→01→11→10). The burst sequence is fully hardware-defined and requires no software configuration - the 71V3577S75BQ8 executes it autonomously using its internal counter.

How does the flow-through output architecture benefit system timing in the 71V3577S75BQ8?

The flow-through output architecture of the 71V3577S75BQ8 eliminates output register delay, delivering valid data within 7.5 ns of the rising CLK edge (tCD). This enables direct connection to FPGA or ASIC input registers without added pipeline stages, reducing total read latency by up to one clock cycle compared to registered-output SRAMs - a critical advantage in high-frequency datapaths.

Can the 71V3577S75BQ8 operate in industrial temperature environments?

Yes, the 71V3577S75BQ8 is qualified for industrial temperature operation from −40°C to +85°C. This rating applies to all speed grades (7.5 ns, 8.0 ns, 8.5 ns) and is verified across DC and AC parameters including IDD, ISB1, tCD, tSA, and tHA. The 71V3577S75BQ8 maintains full functionality and timing compliance across this full range.

What is the function of the ZZ pin on the 71V3577S75BQ8?

The ZZ pin on the 71V3577S75BQ8 is an asynchronous sleep mode input: when driven HIGH, it internally gates the CLK signal and reduces supply current to ≤35 µA (industrial grade) while guaranteeing data retention. The 71V3577S75BQ8 exits sleep mode synchronously on the next rising CLK edge after ZZ returns LOW, with tZZR = 100 ns recovery time required before valid accesses resume.