My Inquiry
My Account
Renesas 71V3577S75BQG
- Part No.:
- 71V3577S75BQG
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 165-TBGA
- Datasheet:
-
71V3577S75BQG.pdf
- Description:
- IC SRAM 4.5MBIT PAR 165CABGA
- Quantity:
- Payment:
- Shipping:
Inventory:2,477
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
71V3577S75BQG from Renesas Electronics is a 128K × 36-bit (4.608 Mb), 3.3V synchronous SRAM with flow-through outputs, burst counter, and single-cycle deselect. It supports 7.5 ns access time at up to 117 MHz clock frequency, operates across industrial temperature range (–40°C to +85°C), and uses JEDEC-standard 100-pin TQFP packaging. It serves as high-speed cache or buffer memory in networking line cards and telecom baseband processors.
For engineers reviewing the 71V3577S75BQG datasheet, 71V3577S75BQG pinout, 71V3577S75BQG application, or 71V3577S75BQG equivalent, key selection criteria include burst mode flexibility (linear/interleaved via LBO), low-latency flow-through read path, self-timed write with byte- or global-write control, and industrial-grade power-down (ZZ) and standby current specs.
Technical Context
The 71V3577S75BQG implements a synchronous, clock-driven architecture with registered address, control, and data inputs, but unregistered (flow-through) data outputs-enabling minimal read latency. Its internal burst address counter advances on ADV=LOW and selects sequence order via static LBO input (VSS = linear, VDD = interleaved).
Write operations are self-timed and support four modes: global write (GW), byte write enable (BWE) with individual BW1–BW4 controls per 9-bit byte, and combinations thereof. Chip enable is hierarchical (CE + CS0/CS1), and deselect occurs in one clock cycle, critical for burst termination in cache coherency protocols.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 128K × 36-bit (4.608 Mbit); supports 256K × 18-bit via pin multiplexing |
| Access Time / Max Frequency | 7.5 ns / 117 MHz - guarantees deterministic read timing under industrial conditions |
| Supply Voltages | VDD = 3.3 V ±5% (core); VDDQ = 3.3 V ±5% (I/O) - enables direct interface with 3.3V logic without level shifters |
| Operating Temperature | –40°C to +85°C - qualified for industrial and telecom infrastructure deployments |
| Power Consumption | ISB1 = 35 mA (standby, deselected); IZZ = 35 mA (full sleep, ZZ active) - supports low-power system states |
| Burst Mode Control | LBO input selects linear or interleaved 4-word burst sequence - configurable per system bus protocol requirements |
| Output Architecture | Flow-through (no output register) - eliminates one clock cycle of read latency vs. pipelined SRAMs |
Pinout & Package
71V3577S75BQG is packaged in a JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm body, with 0.5 mm pitch. Pinout validated per Renesas document 6450 drw 02a (128K×36 configuration).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | Synchronous address latching on rising CLK edge gated by ADSP/ADSC - supports full 128K depth with 18-bit addressing |
| CLK | System Clock Input | Primary timing reference; all synchronous inputs sampled on rising edge - defines tCYC = 8.5 ns minimum |
| GW, BWE, BW1–BW4 | Write Control Inputs | GW enables full 36-bit write; BWE + BWx allow independent 9-bit byte writes - essential for partial-word updates |
| ADV, ADSP, ADSC | Burst & Address Status | ADV advances internal burst counter; ADSP/ADSC load address register - enables cache-line-aligned burst reads |
| LBO, ZZ, OE | Mode & Output Control | LBO selects burst order (static); ZZ enables ultra-low-power sleep; OE asynchronously enables flow-through outputs |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O | 36-bit bidirectional data bus (32 data + 4 parity); no output register - tCD = 7.5 ns max from CLK↑ to valid data |
Key Features
| Feature | Design Value |
|---|---|
| Flow-through output architecture | Eliminates output register delay - delivers first read data within 7.5 ns of clock rise, critical for zero-wait-state interfaces |
| Single-cycle deselect | Chip deactivation completes in one clock cycle - prevents bus contention during burst termination or context switches |
| Configurable burst order (LBO) | Hardware-selectable linear or interleaved 4-word sequences - matches Intel Pentium or Motorola PowerPC cache line ordering |
| Self-timed write cycle | Internal timing resolves write completion without external strobes - simplifies controller logic and improves timing margin |
| Industrial temperature support | Validated operation from –40°C to +85°C - suitable for outdoor base stations, industrial PLCs, and transportation systems |
Applications
| Telecom Line Card Buffer | Network Processor Cache |
|---|---|
Use Scenario: High-speed packet buffering in 10Gbps Ethernet line cards handling variable-length frames and QoS scheduling. IC Role / Device Role / Timing Role: Primary 4.6 Mbit shared buffer between MAC and switch fabric; operates at 117 MHz with burst reads aligned to 64-byte cache lines. Use Value: Flow-through outputs reduce read latency by one clock cycle vs. pipelined SRAMs, enabling tighter scheduling deadlines in real-time traffic shaping. | Use Scenario: Instruction/data cache for multi-core network processors executing deep-pipeline forwarding algorithms. IC Role / Device Role / Timing Role: Synchronous SRAM used as L1/L2 cache tag RAM and data store; configured for interleaved burst to match processor's address stride. Use Value: 7.5 ns access time sustains >100 MHz sustained bandwidth; single-cycle deselect prevents pipeline stalls during cache line invalidation. |
| Industrial PLC Motion Controller | Radar Signal Processing Buffer |
Use Scenario: Real-time motion profile storage and interpolation in CNC controllers requiring deterministic jitter-free memory access. IC Role / Device Role / Timing Role: Dual-port-equivalent buffer for position/velocity lookup tables; accessed via dedicated SRAM controller with ADV-driven burst reads. Use Value: Industrial temp rating (–40°C to +85°C) ensures reliability in uncooled control cabinets; ZZ sleep mode reduces idle power by >85%. | Use Scenario: Intermediate result storage in FMCW radar baseband processing, where ADC samples are buffered before FFT computation. IC Role / Device Role / Timing Role: High-bandwidth circular buffer feeding FPGA-based DSP engines; configured for linear burst to simplify address generation logic. Use Value: 36-bit width matches 32-bit data + 4-bit validity flags; flow-through outputs align sample delivery precisely with FPGA pipeline stages. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1371BV33-7BBXC | 128K × 36, 7 ns access, 144-ball BGA only; no TQFP option; requires external termination resistors | Targeted at space-constrained BGA-only designs; lacks LBO configurability and industrial temp grade | Select when board area is constrained and BGA assembly is available; avoid if TQFP or LBO flexibility required |
| AS7C33128PFSIG | 128K × 36, 8 ns access, 100-pin TQFP; commercial temp only (0°C to +70°C); no ZZ sleep mode | Cost-optimized for non-industrial applications; missing full-sleep capability and extended temp validation | Select for cost-sensitive commercial systems where ambient temperature stays below 70°C and sleep mode is unused |
Compared with CY7C1371BV33-7BBXC and AS7C33128PFSIG, the 71V3577S75BQG uniquely combines industrial temperature support, TQFP packaging, hardware-configurable burst order (LBO), and integrated ZZ sleep mode - making it the only option qualified for ruggedized embedded systems requiring both reliability and interface flexibility.
Availability
71V3577S75BQG is available at Aetrix Electronics and suitable for telecom infrastructure, industrial automation, and radar signal processing applications requiring stable component supply, long-term lifecycle assurance, and industrial-grade thermal performance.
Supply support for 71V3577S75BQG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.
The 71V3577S75BQG belongs to Renesas' high-speed synchronous SRAM product line, engineered specifically for low-latency, burst-capable memory subsystems in networking, telecom, and real-time control systems.
FAQ
What is the maximum clock frequency supported by the 71V3577S75BQG?
The 71V3577S75BQG supports up to 117 MHz clock frequency with 7.5 ns access time, validated across the industrial temperature range (–40°C to +85°C). This speed grade is available in both TQFP and BGA packages, unlike the faster 6.5 ns variant which is TQFP-only and commercial-temp only.
Does the 71V3577S75BQG support both 128K × 36 and 256K × 18 configurations?
Yes, the 71V3577S75BQG is functionally configurable as either 128K × 36 or 256K × 18 via address pin usage (A17 is NC in 128K×36 mode, active in 256K×18 mode). The pinout differs slightly between configurations, as documented in Renesas drawing 6450 drw 02a and 02b.
How does the LBO pin affect burst behavior in the 71V3577S75BQG?
The LBO pin statically selects burst order: pulled to VSS (LOW) enables linear burst (00→01→10→11), while pulled to VDD (HIGH) enables interleaved burst (00→01→11→10). LBO must remain stable during operation; changing it mid-burst causes undefined address sequencing.
What is the purpose of the ZZ pin on the 71V3577S75BQG?
ZZ is an asynchronous sleep mode input: when driven HIGH, it gates the internal clock and reduces supply current to 35 mA (IZZ), preserving data while minimizing power. The device exits sleep mode after tZZR = 100 ns once ZZ returns LOW and the chip is reselected.
Is the 71V3577S75BQG pin-compatible with other devices in the 71V3577/79 family?
The 71V3577S75BQG shares identical 100-pin TQFP pinout with other speed grades (e.g., 71V3577S80BQG) and configuration variants (e.g., 71V3579S75BQG), but BW3/BW4 are NC on 71V3579. Pin compatibility holds within the same package type and configuration mode, confirmed by Renesas drawings 6450 drw 02a/b.
71V3577S75BQG Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 165-TBGA
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 4.5Mbit
- Memory Organization:
- 128K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 117 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 7.5 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-CABGA (13x15)
71V3577S75BQG FAQ
1.How can I place an order for 71V3577S75BQG through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V3577S75BQG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V3577S75BQG reliable?
The price and inventory of 71V3577S75BQG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V3577S75BQG is usually 5 days.
3.What payment methods are accepted for 71V3577S75BQG?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V3577S75BQG transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 71V3577S75BQG?
71V3577S75BQG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V3577S75BQG order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V3577S75BQG?
For technical support, including 71V3577S75BQG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V3577S75BQG requirements.
6.How does Aetrix verify that 71V3577S75BQG is sourced from the original manufacturer or authorized distributors?
All 71V3577S75BQG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V3577S75BQG meets industry standards.
7.What is the process for return or replacement of 71V3577S75BQG?
All 71V3577S75BQG units undergo pre-shipment inspection (PSI). If there is an issue with 71V3577S75BQG, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V3577S75BQG part is unused and in its original packaging.
Return procedure for 71V3577S75BQG:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V3577S75BQG Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
-
AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
