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Renesas 71V3577S75BQG8
- Part No.:
- 71V3577S75BQG8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 165-TBGA
- Datasheet:
-
71V3577S75BQG8.pdf
- Description:
- IC SRAM 4.5MBIT PAR 165CABGA
- Quantity:
- Payment:
- Shipping:
Inventory:2,208
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Product details
Overview
71V3577S75BQG8 from Renesas Electronics is a 128K × 36-bit (4.608 Mb), 3.3V synchronous SRAM with flow-through outputs, burst counter, and single-cycle deselect. It supports 7.5 ns access time at up to 117 MHz clock frequency, operates across industrial temperature range (–40°C to +85°C), and features LBO-controlled linear/interleaved burst mode for high-bandwidth cache or buffer applications.
For engineers reviewing the 71V3577S75BQG8 datasheet, 71V3577S75BQG8 pinout, 71V3577S75BQG8 application, or 71V3577S75BQG8 equivalent, key selection considerations include its TQFP-100 package, synchronous burst read/write capability, 3.3V core/I/O supply, flow-through output architecture, and industrial-grade power-down (ZZ) and byte-write (BW1–BW4) control.
Technical Context
This SRAM implements a synchronous interface with registered address, control, and data inputs, and a flow-through (unregistered) output path-enabling zero-latency data delivery on the rising clock edge after tCD delay. Its internal burst counter advances addresses automatically upon ADV assertion, supporting four-word bursts defined by LBO polarity.
The device integrates dual chip-select logic (CS0/CS1), asynchronous OE and ZZ controls, and hierarchical write enable (GW, BWE, BW1–BW4) for flexible byte-level or full-word writes. All timing parameters-including tSA, tHA, tCD, and tCHZ-are specified relative to CLK with strict setup/hold windows referenced to VIH/VIL thresholds.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 128K × 36-bit (4.608 Mbit); supports 256K × 18-bit via address mapping |
| Access Time / Max Frequency | 7.5 ns / 117 MHz (commercial & industrial grades); 6.5 ns / 133 MHz only in TQFP commercial |
| Supply Voltages | VDD = 3.3 V ±5% (core), VDDQ = 3.3 V ±5% (I/O); separate power domains |
| Burst Mode Control | LBO input selects linear or interleaved 4-word burst sequence; static configuration |
| Power Management | ZZ input enables full sleep mode (IZZ ≤ 35 µA); ISB1 standby current ≤ 35 mA |
| Operating Temperature | Industrial grade: –40°C to +85°C; validated across full voltage and timing specs |
| Output Architecture | Flow-through (no output register); tCD = 7.5 ns max, tCLZ = 0 ns, tCHZ = 3.5 ns max |
Pinout & Package
71V3577S75BQG8 is packaged in a JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm body, lead-free and RoHS-compliant. Pinout matches PKG100 configuration for 128K × 36 organization.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | Synchronous address latch triggered by ADSP/ADSC low + CE low; A0–A16 used for 128K×36 |
| CLK | System Clock Input | Single-phase edge-triggered reference for all synchronous operations; no internal PLL |
| CE, CS0, CS1 | Chip Enable/Select | Three-input decode: CE=LOW, CS0=HIGH, CS1=LOW enables device; supports multi-chip select |
| ADV, ADSP, ADSC | Burst Address Control | ADSP/ADSC load initial address; ADV=LOW advances internal burst counter for next three words |
| GW, BWE, BW1–BW4 | Write Control Inputs | GW enables full 36-bit write; BWE gates BWx; BW1–BW4 each control one 9-bit byte (I/O0–7+I/OP1, etc.) |
| OE | Asynchronous Output Enable | Drives I/O pins to active or high-Z independent of CLK; critical for bus sharing |
| ZZ | Asynchronous Sleep Mode | Internally pulls down; asserts full sleep (IZZ ≤ 35 µA) without requiring clock gating logic |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O | 36-bit bidirectional synchronous interface; flow-through output path; no output register |
| VDD, VDDQ, VSS | Power/Ground | Dual-supply: VDD (core), VDDQ (I/O), and multiple VSS pins for noise isolation and thermal dissipation |
Key Features
| Feature | Design Value |
|---|---|
| Flow-through output architecture | Eliminates output register delay: data appears on I/O pins within tCD (7.5 ns max) after CLK rise |
| Single-cycle deselect | Device enters high-Z state on next clock edge after CE/CS deassertion-no pipeline stall |
| Configurable burst order (LBO) | Hardware-selectable linear or interleaved 4-word burst sequence; no software overhead |
| Byte-write granularity | Four independent 9-bit write enables (BW1–BW4) allow partial-word updates without read-modify-write |
| Low-power sleep mode (ZZ) | Reduces supply current to ≤35 µA while retaining data; no external clock stop required |
| Industrial temperature support | Full AC/DC specifications guaranteed from –40°C to +85°C-suitable for embedded control and networking |
Applications
| Cache Memory Subsystem | Network Packet Buffer |
|---|---|
|
Use Scenario: High-speed L2/L3 cache for RISC or DSP processors requiring burst-aligned memory access. IC Role / Device Role / Timing Role: Synchronous SRAM providing zero-wait-state burst reads/writes synchronized to processor clock domain. Use Value: 7.5 ns tCD and 117 MHz operation enable sustained 4-word burst throughput matching CPU front-end bandwidth. |
Use Scenario: Temporary storage for variable-length Ethernet or PCIe packets in switch fabric or NIC controllers. IC Role / Device Role / Timing Role: Dual-port-capable buffer supporting concurrent ingress/egress via burst-addressed reads and byte-select writes. Use Value: Independent BW1–BW4 control allows per-packet header/tail updates without disturbing payload data. |
| Real-Time Video Frame Buffer | Industrial PLC Data Log |
|
Use Scenario: Line-buffering and frame storage in HD video processing pipelines with strict timing deadlines. IC Role / Device Role / Timing Role: Flow-through SRAM delivering pixel data on every clock edge during active video period. Use Value: tCLZ = 0 ns and tCHZ = 3.5 ns ensure glitch-free transitions between active and blanking intervals. |
Use Scenario: Nonvolatile event logging in programmable logic controllers where data integrity must survive power loss. IC Role / Device Role / Timing Role: Battery-backed or fast-save buffer holding timestamped I/O states before EEPROM write. Use Value: ZZ sleep mode (≤35 µA) extends backup battery life while preserving contents during brownouts. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 71V3579S75BQG8 | Same family, 256K × 18 organization; shares pinout but differs in address mapping and BW3/BW4 functionality | Optimized for 18-bit data buses (e.g., legacy DSPs); lacks BW3/BW4 pins in TQFP package | Select when 256K × 18 capacity suffices and 18-bit interface reduces trace count vs. 36-bit |
| CY7C1371DV33-75BZXI | Cypress (Infineon) 128K × 36 SRAM; 75 MHz max, 7.5 ns access; different pinout and control signal timing | Requires PCB redesign; supports JTAG boundary scan but lacks ADV/ADSC cache-control interface | Choose only if existing design uses Cypress footprint or requires integrated boundary-scan test support |
Compared with 71V3577S75BQG8, the 71V3579S75BQG8 offers identical speed and packaging but targets narrower data paths, while CY7C1371DV33-75BZXI trades burst flexibility and cache-aware controls for testability-neither is pin-compatible.
Availability
71V3577S75BQG8 is available at Aetrix Electronics and suitable for industrial control systems, network infrastructure equipment, and real-time video processing applications requiring stable component supply, long-term lifecycle support, and guaranteed industrial temperature performance.
Supply support for 71V3577S75BQG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.
The 71V3577S product line delivers high-speed synchronous SRAMs optimized for cache, buffering, and real-time data acquisition-designed to meet stringent timing, power, and reliability requirements in mission-critical embedded systems.
FAQ
What memory organization does the 71V3577S75BQG8 support?
The 71V3577S75BQG8 is organized as 128K × 36 bits (4.608 Mbit). It also supports 256K × 18-bit operation through internal address remapping, enabling compatibility with 18-bit data buses without changing the physical package or pinout.
Does the 71V3577S75BQG8 support both linear and interleaved burst modes?
Yes, the 71V3577S75BQG8 supports both burst modes via the LBO (Linear Burst Order) input. When LBO = LOW, linear addressing is used; when LBO = HIGH, interleaved addressing is selected. This setting is static and must not change during operation.
What is the maximum clock frequency supported by the 71V3577S75BQG8?
The 71V3577S75BQG8 supports up to 117 MHz (tCYC = 8.5 ns) across commercial and industrial temperature ranges. A faster 133 MHz (tCYC = 7.5 ns) option is available-but only in the TQFP package and commercial temperature grade.
How does the 71V3577S75BQG8 handle power-down and data retention?
The 71V3577S75BQG8 enters full sleep mode when ZZ is driven HIGH, reducing supply current to ≤35 µA while guaranteeing data retention. No external clock stop or sequencing is required-the device manages internal clock gating autonomously.
Is the 71V3577S75BQG8 compatible with 3.3V-only system designs?
Yes, the 71V3577S75BQG8 uses separate 3.3V supplies for core (VDD) and I/O (VDDQ), both specified at 3.3V ±5%. It requires no level-shifting circuitry and interfaces directly with 3.3V logic families including LVTTL and LVCMOS.
71V3577S75BQG8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 165-TBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 4.5Mbit
- Memory Organization:
- 128K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 117 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 7.5 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-CABGA (13x15)
71V3577S75BQG8 FAQ
1.How can I place an order for 71V3577S75BQG8 through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V3577S75BQG8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V3577S75BQG8 reliable?
The price and inventory of 71V3577S75BQG8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V3577S75BQG8 is usually 5 days.
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71V3577S75BQG8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V3577S75BQG8 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V3577S75BQG8?
For technical support, including 71V3577S75BQG8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V3577S75BQG8 requirements.
6.How does Aetrix verify that 71V3577S75BQG8 is sourced from the original manufacturer or authorized distributors?
All 71V3577S75BQG8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V3577S75BQG8 meets industry standards.
7.What is the process for return or replacement of 71V3577S75BQG8?
All 71V3577S75BQG8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V3577S75BQG8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V3577S75BQG8 part is unused and in its original packaging.
Return procedure for 71V3577S75BQG8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V3577S75BQG8 Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
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24AA02UIDT-I/OT
Microchip Technology
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AT24C08C-STUM-T
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