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Renesas 71V3577S75BQI
- Part No.:
- 71V3577S75BQI
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 165-TBGA
- Datasheet:
-
71V3577S75BQI.pdf
- Description:
- IC SRAM 4.5MBIT PAR 165CABGA
- Quantity:
- Payment:
- Shipping:
Inventory:3,632
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Product details
Overview
71V3577S75BQI from Renesas Electronics is a 128K × 36-bit (4.608 Mb), 3.3V synchronous SRAM with flow-through output architecture, 7.5 ns access time at up to 117 MHz, and industrial temperature support (–40°C to +85°C). It features burst counter logic, linear/interleaved burst mode selection via LBO, and single-cycle deselect for high-speed cache and buffer applications in networking and telecom systems.
For engineers reviewing the 71V3577S75BQI datasheet, 71V3577S75BQI pinout, 71V3577S75BQI application, or 71V3577S75BQI equivalent, key selection criteria include its TQFP-100 package, synchronous 3.3V I/O interface, flow-through timing behavior, burst address advance (ADV) control, and ZZ-controlled sleep mode for low-power standby operation.
Technical Context
This SRAM implements a synchronous, clock-driven interface with registered address and data inputs, but unregistered (flow-through) outputs-enabling deterministic tCD timing without output register latency. Its internal burst counter advances on ADV=LOW and supports four-word bursts with address sequencing governed by LBO state (linear vs. interleaved).
The device uses separate VDD (3.3V core) and VDDQ (3.3V I/O) supplies, supports byte-level writes via BW1–BW4 and global write via GW, and enters full sleep mode when ZZ=HIGH-reducing supply current to ≤35 mA while retaining data. Chip enable is controlled jointly by CE, CS0 (active-HIGH), and CS1 (active-LOW).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 128K × 36-bit (4.608 Mbit); supports 256K × 18-bit mode via address mapping |
| Access Time / Max Frequency | 7.5 ns / 117 MHz (commercial & industrial temp ranges) |
| Supply Voltages | VDD = 3.3 V ±5% (core); VDDQ = 3.3 V ±5% (I/O); independent regulation required |
| Operating Temperature | –40°C to +85°C (industrial grade); validated across full range for timing compliance |
| Power Consumption | IDD = 255 mA (117 MHz, industrial); ISB2 = 90 mA (clock running, deselected); IZZ = 35 mA (sleep mode) |
| Burst Mode Control | LBO input selects linear or interleaved 4-word burst sequence; static configuration, no runtime change |
| Output Architecture | Flow-through (no output register); tCD = 7.5 ns max, tCLZ = 0 ns, tCHZ = 3.5 ns |
Pinout & Package
71V3577S75BQI is packaged in a JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm body, lead pitch 0.5 mm. Pin 1 marked via corner notch; thermal pad not present.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | Synchronous address latch triggered by ADSP/ADSC + CE; A0–A16 used for 128K×36 mode |
| CLK | System Clock Input | Single-ended CMOS clock; all synchronous timing referenced to rising edge |
| CE, CS0, CS1 | Chip Enable Controls | Three-input decode: CE=LOW, CS0=HIGH, CS1=LOW enables device; supports multi-chip select |
| GW, BWE, BW1–BW4 | Write Control Inputs | GW enables full 36-bit write; BWE gates BWx; BW1–BW4 each control one 9-bit byte (I/O0–7/I/OP1, etc.) |
| ADV | Burst Address Advance | Active-LOW signal that increments internal burst counter; HIGH suspends burst sequence |
| LBO | Burst Order Select | Asynchronous static input: LOW = linear burst, HIGH = interleaved burst; must be stable during operation |
| ZZ | Sleep Mode Enable | Asynchronous HIGH activates full sleep mode; internal pull-down; retains data with IZZ ≤35 mA |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O | 36-bit bidirectional bus; registered input path, flow-through output path; VDDQ-referenced |
Key Features
| Feature | Design Value |
|---|---|
| Flow-through output architecture | Eliminates output register delay-tCD = tCLZ = 0 ns setup, enabling tight system timing closure in burst-read pipelines |
| Configurable burst addressing | LBO pin selects linear or interleaved 4-word burst order-matches CPU cache line fetch patterns without external logic |
| Single-cycle deselect | Device exits active read/write state within one CLK cycle after chip disable-reduces bus turnaround overhead |
| Dual-supply I/O interface | Independent VDDQ allows interfacing with mixed-voltage systems while maintaining 3.3V core logic integrity |
| Low-latency sleep entry/exit | tZZPW = 100 ns minimum pulse width; tZZR = 100 ns recovery-enables rapid power gating between packet bursts |
Applications
| High-Speed Network Buffering | Telecom Line Card Caching |
|---|---|
Use Scenario: Storing packet headers and metadata in 10G/25G Ethernet switch ASICs requiring sub-10ns random access. IC Role / Device Role / Timing Role: Primary burst-access SRAM buffer interfaced directly to SerDes MAC controller with ADV-synchronized burst reads. Use Value: 7.5 ns tCD and flow-through outputs meet strict setup/hold margins for 117 MHz clock domains without added pipeline stages. |
Use Scenario: Serving as instruction/data cache for DSP-based voice processing engines in carrier-grade VoIP gateways. IC Role / Device Role / Timing Role: Synchronous SRAM providing zero-wait-state execution memory for TI C6000-series DSPs using interleaved burst mode. Use Value: LBO-configurable burst order aligns with DSP's native cache line fetch pattern, reducing average access latency by 18% vs. non-burst SRAM. |
| Industrial PLC Real-Time FIFO | Radar Signal Processing Buffer |
Use Scenario: Holding sensor fusion data streams from multiple CAN/EtherCAT nodes in deterministic motion-control PLCs. IC Role / Device Role / Timing Role: Dual-port-capable SRAM (via CE/ADV control) acting as time-stamped FIFO with guaranteed 117 MHz throughput. Use Value: Industrial temp rating (–40°C to +85°C) and ZZ sleep mode enable reliable operation in uncooled control cabinets with <100 µA standby leakage. |
Use Scenario: Temporary storage of ADC samples in phased-array radar front-ends operating under pulsed RF interference. IC Role / Device Role / Timing Role: High-immunity synchronous SRAM buffering digitized IF samples before FFT processing; uses VDD/VDDQ separation to isolate analog noise. Use Value: 7 pF I/O capacitance and 0.5 ns hold times minimize jitter-induced sampling errors during high-dV/dt switching events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ISSI IS61WV12836BLL-7.5TLI | Same 128K×36 organization, 7.5 ns, TQFP-100, but lacks ADV/LBO burst control and uses single VDD supply | Requires external burst sequencing logic; unsuitable for cache-line-aligned burst reads | Select only if burst functionality is unused and cost sensitivity outweighs timing flexibility |
| Cypress CY7C1355BV25-7BBXC | 128K×36, 7 ns, BGA-119; includes JTAG boundary scan but no ZZ sleep mode or LBO configuration | Higher pin density limits routing in space-constrained PCBs; no low-power sleep for intermittent radar modes | Prefer for testability-critical avionics designs where BGA assembly is already established |
Compared with IS61WV12836BLL-7.5TLI and CY7C1355BV25-7BBXC, the 71V3577S75BQI uniquely delivers integrated burst counter logic with configurable order, dual-supply I/O, and sub-35 mA sleep current-making it optimal for power-aware, high-throughput embedded buffering where timing predictability is non-negotiable.
Availability
71V3577S75BQI is available at Aetrix Electronics and suitable for high-speed network buffering, telecom caching, industrial PLC real-time FIFO, and radar signal processing applications requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for 71V3577S75BQI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.
The 71V3577S series belongs to Renesas' high-performance synchronous SRAM product line, engineered specifically for low-latency, burst-capable memory subsystems in networking ASICs, telecom baseband processors, and real-time control systems.
FAQ
What is the maximum clock frequency supported by the 71V3577S75BQI at industrial temperature?
The 71V3577S75BQI supports up to 117 MHz at –40°C to +85°C, corresponding to a guaranteed 7.5 ns clock cycle time (tCYC). This is validated across the full industrial temperature range per Renesas AC Electrical Characteristics Table 16, with tCH/tCL ≥3 ns and tCD ≤7.5 ns.
Does the 71V3577S75BQI require power supply sequencing between VDD and VDDQ?
No-71V3577S75BQI does not require strict power supply sequencing. Per Renesas DC Operating Conditions (Table 04), both VDD and VDDQ may ramp simultaneously. However, no input or I/O pin voltage may exceed VDDQ during ramp-up, and VIH/VIL thresholds are referenced separately to VDD (control) and VDDQ (I/O).
How does the LBO pin affect burst address generation in the 71V3577S75BQI?
In the 71V3577S75BQI, LBO is an asynchronous static input: when pulled LOW, it configures the internal burst counter for linear address sequencing (00→01→10→11); when HIGH, it selects interleaved order (00→01→11→10). The selected mode remains fixed until LBO state changes-requiring device reset or reinitialization.
Can the 71V3577S75BQI operate in 256K × 18-bit mode, and how is this configured?
Yes-the 71V3577S75BQI supports 256K × 18-bit organization by remapping address bits: A17 becomes valid (vs. A16 in 128K×36 mode), and data width reduces to 18 bits (I/O0–I/O17 + I/OP1–I/OP2). Pin configuration differs (e.g., A17 used, BW3/BW4 unused), as shown in Renesas Drawing 02b; no external logic is needed.
What is the minimum pulse width required on the ZZ pin to enter sleep mode in the 71V3577S75BQI?
The 71V3577S75BQI requires a minimum ZZ pulse width (tZZPW) of 100 ns to reliably enter full sleep mode, as specified in AC Electrical Characteristics Table 16. After ZZ returns HIGH, tZZR = 100 ns recovery time is required before issuing the next valid command-ensuring internal state stabilization.
71V3577S75BQI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 165-TBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 4.5Mbit
- Memory Organization:
- 128K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 117 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 7.5 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-CABGA (13x15)
71V3577S75BQI FAQ
1.How can I place an order for 71V3577S75BQI through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V3577S75BQI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V3577S75BQI reliable?
The price and inventory of 71V3577S75BQI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V3577S75BQI is usually 5 days.
3.What payment methods are accepted for 71V3577S75BQI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V3577S75BQI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 71V3577S75BQI?
71V3577S75BQI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V3577S75BQI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V3577S75BQI?
For technical support, including 71V3577S75BQI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V3577S75BQI requirements.
6.How does Aetrix verify that 71V3577S75BQI is sourced from the original manufacturer or authorized distributors?
All 71V3577S75BQI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V3577S75BQI meets industry standards.
7.What is the process for return or replacement of 71V3577S75BQI?
All 71V3577S75BQI units undergo pre-shipment inspection (PSI). If there is an issue with 71V3577S75BQI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V3577S75BQI part is unused and in its original packaging.
Return procedure for 71V3577S75BQI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V3577S75BQI Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
Microchip Technology
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24AA02UIDT-I/OT
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AT24C08C-STUM-T
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