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Renesas 71V3577S75BQI8
- Part No.:
- 71V3577S75BQI8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 165-TBGA
- Datasheet:
-
71V3577S75BQI8.pdf
- Description:
- IC SRAM 4.5MBIT PAR 165CABGA
- Quantity:
- Payment:
- Shipping:
Inventory:2,374
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Product details
Overview
71V3577S75BQI8 from Renesas Electronics is a 128K × 36-bit (4.608 Mb), 3.3V synchronous SRAM with flow-through output architecture, 7.5 ns access time at up to 117 MHz, and industrial temperature support (–40°C to +85°C). It features burst counter logic, linear/interleaved burst mode selection via LBO, and single-cycle deselect for high-speed cache and buffer applications in networking and telecom systems.
For engineers reviewing the 71V3577S75BQI8 datasheet, 71V3577S75BQI8 pinout, 71V3577S75BQI8 application, or 71V3577S75BQI8 equivalent, key selection criteria include its TQFP-100 package, synchronous 3.3V I/O interface, self-timed write with byte-level control (BW1–BW4), ZZ sleep mode, and compatibility with burst-addressing processors requiring deterministic low-latency memory access.
Technical Context
The 71V3577S75BQI8 implements a synchronous, clock-driven architecture with registered address, control, and data inputs, and a flow-through (unregistered) output path-enabling zero-cycle output latency after clock-to-data delay. Its internal burst counter advances on ADV=LOW and supports four-word bursts with address sequencing governed by LBO state (linear or interleaved).
Write operations are controlled synchronously via GW (global), BWE (byte write enable), and BW1–BW4 (individual 9-bit byte enables), allowing selective 9-bit writes without affecting other bytes. Power management includes asynchronous ZZ input for full-sleep mode (IZZ ≤ 35 µA) and CE/CS0/CS1 chip-select hierarchy for multi-chip configurations.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 128K × 36 bits (4.608 Mbit); supports 256K × 18 mode via pin configuration |
| Access Time / Max Frequency | 7.5 ns / 117 MHz - guaranteed for commercial and industrial temp ranges in TQFP package |
| Supply Voltages | VDD = 3.3 V ±5% (core), VDDQ = 3.3 V ±5% (I/O) - separate power domains enable noise isolation |
| Burst Mode Control | LBO pin selects linear or interleaved 4-word burst sequence - critical for cache line alignment with CPU bus protocols |
| Power-Down Current | IZZ ≤ 35 µA in full sleep mode (ZZ HIGH) - enables ultra-low standby power in always-on systems |
| Operating Temperature | –40°C to +85°C - qualified for industrial-grade embedded and telecom infrastructure use |
| Output Architecture | Flow-through (no output register) - eliminates output register delay, enabling immediate data availability post-clock edge |
Pinout & Package
71V3577S75BQI8 is packaged in a JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm body, lead-free and RoHS-compliant. Pinout is defined for 128K × 36 configuration per Renesas datasheet 6450, Rev. 6.42.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | Synchronous address latch triggered by ADSP/ADSC + CE; A0–A16 used for 128K×36 addressing |
| CLK | System Clock Input | Single-phase edge-triggered reference for all synchronous operations; no internal PLL |
| GW, BWE, BW1–BW4 | Write Control Inputs | GW enables full 36-bit write; BWE gates BWx; BW1–BW4 each control one 9-bit byte (I/O0–7+I/OP1, etc.) |
| ADV, ADSP, ADSC | Burst & Address Status | ADV advances burst counter; ADSP (processor) and ADSC (cache) load address register on falling edge |
| LBO | Burst Order Select | Asynchronous static input: LOW = linear burst, HIGH = interleaved burst - must remain stable during operation |
| ZZ | Asynchronous Sleep Enable | HIGH disables internal clock and reduces current to ≤35 µA; retains data; internal pull-down |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O (36-bit) | Synchronous input path (registered), flow-through output path; 32 data + 4 parity pins |
| OE | Asynchronous Output Enable | LOW enables outputs; HIGH forces high-Z - allows bus sharing without clock synchronization |
Key Features
| Feature | Design Value |
|---|---|
| Flow-through output architecture | Eliminates output register delay - data appears on I/O pins within tCD (≤7.5 ns) of CLK rising edge |
| Single-cycle deselect | Chip deactivation completes in one clock cycle - enables rapid context switching in multi-SRAM systems |
| Configurable burst order (LBO) | Hardware-selectable linear or interleaved 4-word burst - matches x86 or RISC processor cache line fetch patterns |
| Byte-write granularity (BW1–BW4) | Independent 9-bit write enables allow partial-word updates without read-modify-write overhead |
| Low-power sleep mode (ZZ) | Reduces supply current to ≤35 µA while retaining memory contents - ideal for power-gated subsystems |
| 3.3V core + 3.3V I/O separation | Dual VDD/VDDQ supplies reduce noise coupling between logic and I/O drivers, improving signal integrity |
Applications
| Networking Packet Buffer | Industrial PLC Data Cache |
|---|---|
Use Scenario: High-throughput packet buffering in Layer 2/3 switches where burst reads must keep pace with 1 Gbps+ line rates. IC Role / Device Role / Timing Role: Synchronous SRAM serving as first-level packet descriptor cache with deterministic 7.5 ns access and burst-aligned reads. Use Value: Flow-through outputs and single-cycle deselect minimize pipeline stalls during back-to-back packet processing cycles. |
Use Scenario: Real-time I/O data caching in programmable logic controllers operating in harsh industrial environments. IC Role / Device Role / Timing Role: Industrial-temperature SRAM storing sensor input history and control algorithm variables with guaranteed retention at –40°C. Use Value: ZZ sleep mode enables energy-efficient duty-cycled operation while preserving critical state across power interruptions. |
| Telecom Baseband Memory | Test Equipment Pattern RAM |
Use Scenario: Burst-access memory for digital predistortion (DPD) coefficient storage in 4G/5G radio units. IC Role / Device Role / Timing Role: Synchronous SRAM interfacing directly with FPGA-based DPD engines using ADV/LBO-controlled burst reads. Use Value: Interleaved burst mode aligns with FFT-based coefficient access patterns, reducing external address bus toggling. |
Use Scenario: High-speed pattern generation in automated test equipment requiring repeatable, low-jitter waveform memory. IC Role / Device Role / Timing Role: Deterministic-latency SRAM providing glitch-free stimulus data to DACs at >100 MHz clock rates. Use Value: 7.5 ns tCD and tight AC specs (tCH/tCL ≥3 ns) ensure setup/hold margin for sub-10 ns timing windows. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 71V3577S80BQI8 | Slower 8.0 ns access (100 MHz max); identical pinout, package, and feature set | Suitable where timing margin allows relaxed frequency or lower power (ISB1 = 30 mA vs. 35 mA at 7.5 ns) | Select when system clock rate ≤100 MHz and industrial temp range is required; drop-in replacement with no layout change |
| AS7C3256A-10TIN | 32K × 32-bit organization; 10 ns access; different pinout (SOJ-44); no burst counter or LBO | Lacks burst addressing and flow-through output - requires external logic for burst emulation | Consider only for space-constrained designs where density and speed requirements are lower; not pin-compatible |
Compared with 71V3577S75BQI8, the 71V3577S80BQI8 offers identical functionality at reduced speed and power, while the AS7C3256A-10TIN provides lower density and no burst capability - making the 71V3577S75BQI8 optimal for high-bandwidth, burst-oriented industrial systems.
Availability
71V3577S75BQI8 is available at Aetrix Electronics and suitable for networking packet buffers, industrial PLC data caches, and telecom baseband memory requiring stable component supply, long-term lifecycle support, and industrial-temperature qualification.
Supply support for 71V3577S75BQI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.
The 71V3577S family delivers high-speed, low-latency synchronous SRAMs optimized for cache, buffer, and real-time data storage in demanding embedded systems - emphasizing deterministic timing, industrial reliability, and burst efficiency.
FAQ
What is the maximum operating frequency of the 71V3577S75BQI8?
The 71V3577S75BQI8 supports up to 117 MHz clock frequency with guaranteed 7.5 ns access time across the industrial temperature range (–40°C to +85°C) in its TQFP-100 package. This frequency is validated under VDD = 3.3 V ±5% and specified timing conditions per Renesas datasheet 6450.
Does the 71V3577S75BQI8 support both 128K × 36 and 256K × 18 memory configurations?
Yes, the 71V3577S75BQI8 is configurable as either 128K × 36 or 256K × 18 depending on address pin usage and package variant. In TQFP-100, A17 is used for 256K × 18 mode; otherwise, A0–A16 address the 128K × 36 array. Pin configurations are detailed in Renesas datasheet figures 6450 drw 02a and 6450 drw 02b.
How does the LBO pin affect burst behavior in the 71V3577S75BQI8?
The LBO pin statically selects burst order: LOW enables linear burst (00→01→10→11), HIGH enables interleaved burst (00→01→11→10). It must remain stable during operation and is sampled asynchronously. The 71V3577S75BQI8 uses this to align burst sequences with processor cache line fetch patterns without software intervention.
What is the power consumption of the 71V3577S75BQI8 in sleep mode?
In full sleep mode (ZZ HIGH), the 71V3577S75BQI8 draws ≤35 µA (industrial grade) while retaining all stored data. This is specified under VDD = 3.3 V max and TA = +85°C, enabling ultra-low-power standby in battery-backed or energy-harvesting systems without data loss.
Is the 71V3577S75BQI8 pin-compatible with other devices in the 71V3577/79 family?
Yes, the 71V3577S75BQI8 shares identical pinout and package (TQFP-100) with other speed grades (e.g., 71V3577S80BQI8) and the 71V3579S variants. However, BW3/BW4 are unused in 256K × 18 mode, and certain pins (e.g., NC) differ by configuration - always verify pin function tables for the target memory organization.
71V3577S75BQI8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 165-TBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 4.5Mbit
- Memory Organization:
- 128K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 117 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 7.5 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-CABGA (13x15)
71V3577S75BQI8 FAQ
1.How can I place an order for 71V3577S75BQI8 through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V3577S75BQI8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V3577S75BQI8 reliable?
The price and inventory of 71V3577S75BQI8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V3577S75BQI8 is usually 5 days.
3.What payment methods are accepted for 71V3577S75BQI8?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V3577S75BQI8 transactions.
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4.How is shipping managed for 71V3577S75BQI8?
71V3577S75BQI8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V3577S75BQI8 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V3577S75BQI8?
For technical support, including 71V3577S75BQI8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V3577S75BQI8 requirements.
6.How does Aetrix verify that 71V3577S75BQI8 is sourced from the original manufacturer or authorized distributors?
All 71V3577S75BQI8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V3577S75BQI8 meets industry standards.
7.What is the process for return or replacement of 71V3577S75BQI8?
All 71V3577S75BQI8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V3577S75BQI8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V3577S75BQI8 part is unused and in its original packaging.
Return procedure for 71V3577S75BQI8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V3577S75BQI8 Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
Microchip Technology
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24AA02UIDT-I/OT
Microchip Technology
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AT24C08C-STUM-T
Microchip Technology
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