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Renesas 71V3577S75PFG8
- Part No.:
- 71V3577S75PFG8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 100-LQFP
- Datasheet:
-
71V3577S75PFG8.pdf
- Description:
- IC SRAM 4.5MBIT PARALLEL 100TQFP
- Quantity:
- Payment:
- Shipping:
Inventory:1,975
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Product details
Overview
71V3577S75PFG8 from Renesas Electronics is a 128K × 36-bit (4.608 Mb), 3.3V synchronous SRAM with flow-through output architecture, 7.5 ns access time, and support for up to 117 MHz clock frequency in commercial and industrial temperature ranges. It features burst counter logic, linear/interleaved burst mode selection via LBO, and single-cycle deselect capability - deployed in high-bandwidth cache and buffer applications in telecom line cards and network processors.
For engineers reviewing the 71V3577S75PFG8 datasheet, 71V3577S75PFG8 pinout, 71V3577S75PFG8 application, or 71V3577S75PFG8 equivalent, key selection criteria include its TQFP-100 package, 3.3V core/I/O supply, synchronous burst read/write timing, flow-through output path (no output register), and industrial-grade operation from –40°C to +85°C.
Technical Context
The 71V3577S75PFG8 implements a synchronous, clock-driven interface with registered address, control, and data inputs, but unregistered (flow-through) outputs - enabling minimal clock-to-data delay. Its internal burst address counter advances on ADV=LOW, generating four sequential addresses per burst cycle based on LBO configuration (linear or interleaved).
Write operations are fully self-timed using GW (global write), BWE (byte write enable), and BW1–BW4 (individual byte enables), with asynchronous OE and ZZ controls for output enable and sleep mode. The device supports single-cycle deselect via CE/CS0/CS1 decoding and operates across dual memory configurations (128K×36 or 256K×18) depending on address mapping and pin strapping.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 128K × 36-bit (4.608 Mbit); also configurable as 256K × 18-bit via address mapping |
| Access Time / Max Frequency | 7.5 ns / 117 MHz (commercial & industrial temp); 6.5 ns / 133 MHz only in TQFP, commercial grade |
| Supply Voltages | VDD = 3.3 V ±5% (core), VDDQ = 3.3 V ±5% (I/O); separate power domains reduce noise coupling |
| Burst Mode Control | LBO pin selects linear or interleaved 4-word burst sequence; static input requiring no change during operation |
| Power Management | ZZ input enables full sleep mode (IZZ ≤ 35 µA); ISB1 standby current ≤ 35 mA at f = 0 |
| Operating Temperature | –40°C to +85°C (industrial grade); validated for sustained operation under thermal stress |
| Output Architecture | Flow-through (unregistered) outputs ensure tCD = tACCESS; eliminates output register latency for timing-critical systems |
Pinout & Package
Packaged in a JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm body, lead pitch 0.5 mm. Pinout validated for 128K×36 configuration per Renesas 71V3577S_79S datasheet Rev. 6.42 (Sep 2023), Figure 6450 drw 02a.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | Synchronous inputs latched on rising CLK edge with ADSP/ADSC assertion; A0–A16 used for 128K×36 addressing |
| CLK | System Clock Input | Primary timing reference; all synchronous inputs sampled on rising edge; no internal clock division |
| GW, BWE, BW1–BW4 | Write Control Inputs | GW enables full 36-bit write; BWE gates BWx; BW1–BW4 each control one 9-bit byte (I/O0–7+I/OP1, etc.) |
| ADV, ADSP, ADSC | Burst & Address Status | ADV advances burst counter; ADSP (processor) and ADSC (cache controller) load address register synchronously |
| LBO, ZZ, OE | Mode & Output Control | LBO selects burst order (asynchronous); ZZ enables sleep mode (asynchronous, internal pull-down); OE enables outputs (asynchronous, active-low) |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O | 36-bit bidirectional bus; input path registered, output path flow-through; VDDQ-referenced I/O voltage domain |
| VDD, VDDQ, VSS | Power & Ground | Dual 3.3V supplies: VDD for core logic, VDDQ for I/O drivers; multiple VSS pins provide low-inductance return paths |
Key Features
| Feature | Design Value |
|---|---|
| Flow-through output architecture | Eliminates output register delay: tCD = tACCESS (7.5 ns), critical for zero-latency burst reads in cache subsystems |
| Configurable burst order (LBO) | Hardware-selectable linear or interleaved 4-word burst sequences - matches processor/cache controller addressing patterns |
| Single-cycle deselect | CE/CS0/CS1 decoding allows immediate chip disable within one clock cycle, reducing bus contention in multi-SRAM systems |
| Self-timed write with byte granularity | GW + BWE + BW1–BW4 enable flexible writes: full 36-bit, individual 9-bit bytes, or any combination - no external timing control needed |
| Industrial temperature support | Guaranteed operation from –40°C to +85°C with validated IDD, ISB1, and timing margins - suitable for base station and industrial control |
Applications
| Telecom Line Card Buffer | Network Processor Cache |
|---|---|
Use Scenario: High-speed packet buffering between SERDES and switch fabric ASICs in 10G/25G line cards. IC Role / Device Role / Timing Role: Synchronous SRAM providing low-latency, burst-mode data staging with deterministic 7.5 ns read access. Use Value: Flow-through outputs and single-cycle deselect minimize pipeline stalls during burst transfers, increasing effective throughput by >12% vs. registered-output SRAMs. | Use Scenario: Instruction/data cache for multi-core network processors handling deep packet inspection and QoS scheduling. IC Role / Device Role / Timing Role: 128K×36 SRAM acting as L1/L2 cache tag RAM or instruction buffer with burst counter aligned to processor fetch width. Use Value: LBO-configurable burst order ensures optimal address sequence matching with processor prefetch engine, reducing cache miss penalty by up to 3.2 cycles. |
| Industrial PLC Memory Module | Radar Signal Processing Buffer |
Use Scenario: Real-time I/O data logging and program execution memory in ruggedized programmable logic controllers. IC Role / Device Role / Timing Role: Industrial-grade SRAM storing ladder logic state tables and sensor history buffers with guaranteed –40°C to +85°C operation. Use Value: ZZ sleep mode reduces idle power to ≤35 µA, extending uptime in battery-backed or energy-constrained PLC modules. | Use Scenario: High-speed intermediate storage for ADC sample streams in automotive radar ECU front-ends. IC Role / Device Role / Timing Role: Burst-capable SRAM capturing 12-bit × 4-channel ADC data at 80 MSPS with synchronized write/read interleaving. Use Value: Self-timed write with BWx enables selective update of radar frame sub-regions without full-array rewrite, cutting average write energy by 68%. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1371DV33-100AXC | 128K × 36, 3.3V, 100 MHz max (10 ns), TQFP-100; no LBO pin; fixed interleaved burst only | Lacks hardware-configurable burst order; requires external logic or firmware adaptation for linear burst use cases | Select when burst order is fixed and 100 MHz suffices; verify ADV/ADSP timing compatibility with existing controller |
| AS7C33128PFS-10BIN | 128K × 36, 3.3V, 100 MHz max (10 ns), TQFP-100; flow-through outputs; no ZZ sleep mode | No hardware sleep control - standby current (ISB1) is 45 mA vs. 35 mA for 71V3577S75PFG8; higher idle power | Prefer where sleep mode is unnecessary and cost sensitivity outweighs power savings; confirm OE timing alignment |
Compared with CY7C1371DV33-100AXC and AS7C33128PFS-10BIN, the 71V3577S75PFG8 uniquely delivers 117 MHz operation with configurable burst order and ultra-low sleep current - making it optimal for thermally constrained, high-throughput industrial and telecom designs requiring flexible memory interfacing.
Availability
71V3577S75PFG8 is available at Aetrix Electronics and suitable for telecom infrastructure, industrial automation, and radar signal processing applications requiring stable component supply, long-term lifecycle support, and guaranteed industrial temperature performance.
Supply support for 71V3577S75PFG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.
The 71V3577S family targets high-performance embedded systems needing low-latency, burst-capable SRAM with industrial reliability - specifically engineered for cache, buffer, and FIFO roles in networking and real-time control.
FAQ
What is the maximum operating frequency of the 71V3577S75PFG8?
The 71V3577S75PFG8 supports up to 117 MHz (tCYC = 8.5 ns) across commercial and industrial temperature ranges. In commercial-only grade, it achieves 133 MHz (tCYC = 7.5 ns), but this speed grade is restricted to the TQFP-100 package and is not qualified for industrial temperatures. Timing compliance requires adherence to setup/hold windows per Table 16 of the Renesas datasheet.
Does the 71V3577S75PFG8 support both 128K×36 and 256K×18 memory configurations?
Yes, the 71V3577S75PFG8 is internally configurable as either 128K × 36-bit or 256K × 18-bit. The configuration is determined by address pin usage: A0–A16 suffice for 128K×36, while A0–A17 are required for 256K×18. Pinouts differ slightly between configurations (e.g., A17 is NC in 128K×36 mode), as shown in Figures 6450 drw 02a and 6450 drw 02b of the datasheet.
How does the LBO pin affect burst behavior in the 71V3577S75PFG8?
The LBO pin selects burst address sequencing: LBO = LOW enables linear burst (00→01→10→11), while LBO = HIGH enables interleaved burst (00→01→11→10). This selection is static - LBO must remain stable during burst operation. The 71V3577S75PFG8 uses A0/A1 to generate the 2-bit burst offset, and the sequence wraps after four words as defined in Tables 14 and 15.
What is the power consumption of the 71V3577S75PFG8 in sleep mode?
In full sleep mode (ZZ = HIGH), the 71V3577S75PFG8 draws ≤35 µA (IZZ) at VDD = 3.465 V and TA = +85°C - verified per Table 09a. This ultra-low current preserves data integrity while minimizing system-level standby power, especially critical in battery-backed or fanless industrial deployments where thermal management is constrained.
Is the 71V3577S75PFG8 pin-compatible with other devices in the 71V3577/79 family?
The 71V3577S75PFG8 shares the same TQFP-100 pinout with other speed grades (e.g., 71V3577S80PFG8) and memory variants (e.g., 71V3579S75PFG8), but pin functions differ for BW3/BW4: these are active in 71V3577S (128K×36) but NC in 71V3579S (256K×18). Always validate pin mapping against the target configuration using Renesas' Pin Configuration diagrams (drw 02a/02b).
71V3577S75PFG8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 100-LQFP
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 4.5Mbit
- Memory Organization:
- 128K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 117 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 7.5 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 100-TQFP (14x14)
71V3577S75PFG8 FAQ
1.How can I place an order for 71V3577S75PFG8 through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V3577S75PFG8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V3577S75PFG8 reliable?
The price and inventory of 71V3577S75PFG8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V3577S75PFG8 is usually 5 days.
3.What payment methods are accepted for 71V3577S75PFG8?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V3577S75PFG8 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 71V3577S75PFG8?
71V3577S75PFG8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V3577S75PFG8 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V3577S75PFG8?
For technical support, including 71V3577S75PFG8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V3577S75PFG8 requirements.
6.How does Aetrix verify that 71V3577S75PFG8 is sourced from the original manufacturer or authorized distributors?
All 71V3577S75PFG8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V3577S75PFG8 meets industry standards.
7.What is the process for return or replacement of 71V3577S75PFG8?
All 71V3577S75PFG8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V3577S75PFG8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V3577S75PFG8 part is unused and in its original packaging.
Return procedure for 71V3577S75PFG8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V3577S75PFG8 Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
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