Renesas 71V3577S75PFGI

Overview

71V3577S75PFGI from Renesas Electronics is a 128K × 36-bit (4.608 Mb), 3.3V synchronous SRAM with flow-through output architecture, 7.5 ns access time at up to 117 MHz clock frequency, and industrial temperature support (–40°C to +85°C). It features burst counter logic, linear/interleaved burst mode selection via LBO pin, and single-cycle deselect for high-speed cache and buffer applications in networking and telecom systems.

For engineers reviewing the 71V3577S75PFGI datasheet, 71V3577S75PFGI pinout, 71V3577S75PFGI application, or 71V3577S75PFGI equivalent, key selection criteria include its TQFP-100 package, synchronous 36-bit data bus, 3.3V core/I/O supply, flow-through read path, and support for self-timed write with byte-level granularity via BW1–BW4 and BWE.

Technical Context

The 71V3577S75PFGI implements a synchronous, clock-driven interface with registered address, control, and data inputs, but no output register - enabling true flow-through read timing. Its internal burst address counter advances on ADV=LOW and supports four-word bursts with sequence order determined by the static LBO input (linear or interleaved).

Write operations are controlled synchronously via GW (global), BWE (byte write enable), and BW1–BW4 (individual 9-bit byte enables), allowing selective writes without disabling outputs. Power management includes asynchronous ZZ sleep mode (≤35 µA standby current) and CMOS-compatible I/O with 3.3V VDDQ and VDD supplies.

Key Specifications

Pinout & Package

71V3577S75PFGI is packaged in a 100-pin thin quad flatpack (TQFP), JEDEC standard PKG100, with 0.5 mm pitch and exposed thermal pad. Pin 1 is marked by dot or beveled corner; top-side marking includes "71V3577S75PFGI" and date code.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with 71V3577S75PFGI, the 71V3579S75PFGI offers identical speed and packaging but reorganizes memory as 256K × 18 - simplifying 18-bit designs but removing two byte enables. The CY7C1371DV33-75BGXI provides QDR functionality at lower frequency but lacks synchronous burst logic and flow-through output timing.

Availability

71V3577S75PFGI is available at Aetrix Electronics and suitable for networking packet buffers, telecom line card caches, industrial PLC data logs, and radar signal preprocessing buffers requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for 71V3577S75PFGI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The 71V3577S series belongs to Renesas' high-speed synchronous SRAM product line, engineered for low-latency, burst-capable memory subsystems in telecom infrastructure, network switches, and real-time embedded systems.

FAQ

What is the maximum clock frequency supported by the 71V3577S75PFGI?

The 71V3577S75PFGI supports up to 117 MHz clock frequency with 7.5 ns access time across both commercial and industrial temperature ranges. A faster 6.5 ns / 133 MHz variant exists but is restricted to TQFP packaging and commercial temperature only - not applicable to the 71V3577S75PFGI industrial-grade part.

Does the 71V3577S75PFGI support both linear and interleaved burst modes?

Yes, the 71V3577S75PFGI supports both burst modes via the LBO (Linear Burst Order) pin. When LBO is driven LOW, the device executes linear burst sequencing; when HIGH, it uses interleaved burst order. This selection is static and must remain stable during operation.

How does the flow-through output architecture of the 71V3577S75PFGI improve system timing?

The 71V3577S75PFGI's flow-through output architecture eliminates the output register delay found in pipelined SRAMs, delivering valid data within 7.5 ns after the rising CLK edge (tCD). This enables tighter read-to-use timing margins in cache and buffer applications where latency directly impacts throughput.

Can the 71V3577S75PFGI operate with different supply voltages for core and I/O?

No - the 71V3577S75PFGI requires matched 3.3 V ±5% supplies for both VDD (core) and VDDQ (I/O). While the pins are physically separate to support independent decoupling, the specification mandates identical nominal voltage and tolerance; using mismatched supplies violates absolute maximum ratings.

What is the function of the ADV pin on the 71V3577S75PFGI?

The ADV (Burst Address Advance) pin on the 71V3577S75PFGI is a synchronous input that controls burst counter progression. When ADV is LOW on the rising CLK edge, the internal burst counter advances to the next address in the sequence. When ADV is HIGH, burst advancement is suspended, holding the current address for repeated access.