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Renesas 71V3577S75PFGI8
- Part No.:
- 71V3577S75PFGI8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 100-LQFP
- Datasheet:
-
71V3577S75PFGI8.pdf
- Description:
- IC SRAM 4.5MBIT PARALLEL 100TQFP
- Quantity:
- Payment:
- Shipping:
Inventory:2,596
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Product details
Overview
71V3577S75PFGI8 from Renesas Electronics is a 128K × 36-bit (4.608 Mb), 3.3V synchronous SRAM with flow-through output architecture, 7.5 ns access time at up to 117 MHz clock frequency, and industrial temperature support (–40°C to +85°C). It features burst counter logic, linear/interleaved burst mode selection via LBO pin, and single-cycle deselect for high-speed cache or buffer applications in networking and telecom systems.
For engineers reviewing the 71V3577S75PFGI8 datasheet, 71V3577S75PFGI8 pinout, 71V3577S75PFGI8 application, or 71V3577S75PFGI8 equivalent, key selection criteria include its TQFP-100 package, synchronous 36-bit data width, 3.3V core/I/O supply, flow-through read timing, and support for global or byte-level writes with GW/BWE/BWx control.
Technical Context
This SRAM implements a fully synchronous interface with registered address, control, and data inputs, and a flow-through (unregistered) output path-enabling zero-latency read data delivery after tCD delay. Its internal burst counter advances on ADV=LOW and supports four-word bursts with address sequencing determined by LBO state (linear or interleaved).
Write operations are self-timed and configurable: global write (GW) enables full 36-bit writes, while BWE and BW1–BW4 allow independent 9-bit byte writes. Power management includes asynchronous ZZ-driven sleep mode (IZZ ≤ 35 µA) and synchronous standby modes (ISB1 ≤ 35 mA, ISB2 ≤ 100 mA).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 128K × 36-bit (4.608 Mbit); supports 256K × 18-bit configuration via address mapping |
| Access Time / Max Frequency | 7.5 ns / 117 MHz (commercial & industrial temp); 6.5 ns / 133 MHz available only in commercial TQFP |
| Supply Voltages | VDD = 3.3 V ±5% (core), VDDQ = 3.3 V ±5% (I/O); separate power domains enable noise isolation |
| Burst Mode | Four-word burst with programmable order (LBO pin selects linear or interleaved sequence) |
| Power Management | Asynchronous ZZ sleep mode (IZZ ≤ 35 µA); synchronous standby (ISB1 ≤ 35 mA, ISB2 ≤ 100 mA) |
| Operating Temperature | –40°C to +85°C (industrial grade); validated across full voltage and timing specs |
| Output Architecture | Flow-through (no output register); tCD = 7.5 ns max ensures deterministic read-to-data timing |
Pinout & Package
71V3577S75PFGI8 is packaged in a JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm body, lead pitch 0.5 mm. Pin 1 marked via corner cut; pins include 18 address lines (A0–A17), 36 data I/Os (I/O0–I/O31 + I/OP1–I/OP4), 4 byte write enables (BW1–BW4), and dual chip select (CS0/CS1) with CE gating.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | Synchronous address latching triggered by ADSP/ADSC low + CE low; supports 128K×36 or 256K×18 addressing |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O (36-bit) | Registered input path; flow-through output path; no output register enables minimal read latency |
| CLK | System Clock Input | Single-phase edge-triggered reference for all synchronous operations; defines tCYC, tCD, tOE timing windows |
| GW, BWE, BW1–BW4 | Write Control Inputs | GW enables full 36-bit write; BWE gates BWx; BW1–BW4 each control one 9-bit byte (I/O0–7+I/OP1, etc.) |
| ADV, ADSP, ADSC | Burst & Address Status | ADV advances burst counter; ADSP (processor) and ADSC (cache) load address register synchronously |
| LBO | Burst Order Select | Asynchronous static input: LBO=LOW → linear burst; LBO=HIGH → interleaved burst; must remain stable during operation |
| ZZ | Asynchronous Sleep Enable | ZZ=HIGH internally gates CLK and reduces current to IZZ ≤ 35 µA; retains data; internal pull-down |
| OE | Asynchronous Output Enable | OE=LOW enables outputs regardless of clock phase; OE=HIGH forces high-Z state immediately |
Key Features
| Feature | Design Value |
|---|---|
| Flow-through output architecture | Eliminates output register delay: data appears at I/O pins within tCD = 7.5 ns after CLK rise, critical for zero-wait-state bus designs |
| Configurable 4-word burst mode | LBO pin selects linear or interleaved address sequence-matches processor/cache burst patterns without external logic |
| Single-cycle deselect | Chip deactivation completes in one clock cycle (via CE/CS0/CS1), enabling rapid context switching in multi-SRAM systems |
| Byte-selectable write capability | Four independent 9-bit write enables (BW1–BW4) allow partial writes without read-modify-write overhead |
| Low-power sleep mode | Asynchronous ZZ control reduces ICC to ≤35 µA while retaining memory contents-ideal for power-gated subsystems |
| Industrial-grade reliability | Validated over –40°C to +85°C with full AC/DC specs; 100-pin TQFP meets JEDEC MO-140 standard for thermal/mechanical robustness |
Applications
| Network Packet Buffer | Telecom Line Card Cache |
|---|---|
|
Use Scenario: Storing incoming/outgoing Ethernet or SONET frames in real-time packet switching ASICs. IC Role / Device Role / Timing Role: High-bandwidth, low-latency buffer interfacing directly to MAC or framer logic with synchronous 117 MHz clock domain. Use Value: 7.5 ns tCD and flow-through outputs eliminate pipeline stalls; 36-bit width matches common bus widths; burst mode aligns with frame payload access patterns. |
Use Scenario: Serving as instruction/data cache for DSPs or RISC processors in carrier-grade line cards. IC Role / Device Role / Timing Role: Synchronous SRAM providing zero-wait-state execution memory with burst prefetch capability. Use Value: Linear/interleaved burst selection (LBO) matches processor burst behavior; single-cycle deselect enables fast cache line replacement. |
| Industrial PLC Data Log | Radar Signal Processing FIFO |
|
Use Scenario: Capturing sensor timestamps and process variables in deterministic real-time control loops. IC Role / Device Role / Timing Role: Non-volatile-buffered SRAM holding time-critical logs with guaranteed retention during brownouts. Use Value: Industrial temp range (–40°C to +85°C) and ZZ sleep mode ensure reliable operation in harsh environments with minimal power draw. |
Use Scenario: Acting as a high-speed FIFO between ADC front-end and FFT engine in phased-array radar systems. IC Role / Device Role / Timing Role: Dual-port-capable buffer (via CE/ADV timing) supporting concurrent capture and analysis streams. Use Value: Self-timed write with GW/BWE allows flexible data ingestion rates; 36-bit width accommodates complex IQ sample packing. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1371DV33-7BBXC | 128K × 36-bit, 7 ns access, 144-ball BGA; no LBO pin; fixed linear burst only | Lacks interleaved burst mode and TQFP option; requires PCB redesign for BGA placement and reflow | Choose when BGA footprint and fixed burst order are acceptable, and higher density interconnect is needed. |
| AS7C33128P-7TIN | 128K × 36-bit, 7 ns access, 100-pin TQFP; no ADV/ADSC/ADSP pins; simplified control interface | Omits cache-controller interface signals (ADSC/ADSP) and burst advance control (ADV); not suitable for cache coherency protocols | Choose for simpler controller designs where burst is always initiated by address increment, not status signals. |
Compared with CY7C1371DV33-7BBXC and AS7C33128P-7TIN, the 71V3577S75PFGI8 uniquely combines TQFP-100 packaging, industrial temperature rating, LBO-configurable burst order, and full cache-controller interface (ADSP/ADSC/ADV)-making it optimal for upgrade paths in legacy telecom and industrial control hardware.
Availability
71V3577S75PFGI8 is available at Aetrix Electronics and suitable for network packet buffering, telecom line card caching, industrial PLC data logging, and radar signal processing applications requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for 71V3577S75PFGI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.
The 71V3577S family was designed specifically for high-performance, low-latency synchronous buffering in telecom infrastructure, enterprise networking, and real-time industrial control-emphasizing burst efficiency, power-aware operation, and industrial reliability.
FAQ
What is the maximum operating frequency of the 71V3577S75PFGI8?
The 71V3577S75PFGI8 supports up to 117 MHz clock frequency with 7.5 ns access time across both commercial and industrial temperature ranges. A faster 6.5 ns / 133 MHz speed grade is available but restricted to commercial temperature and TQFP packaging only-not applicable to the 71V3577S75PFGI8 industrial-grade variant.
Does the 71V3577S75PFGI8 support both linear and interleaved burst modes?
Yes, the 71V3577S75PFGI8 supports both burst modes via the LBO (Linear Burst Order) pin: LBO=LOW selects linear addressing (00→01→10→11), while LBO=HIGH selects interleaved (00→01→11→10). This pin is asynchronous and must remain static during device operation to avoid undefined burst behavior.
How does the 71V3577S75PFGI8 handle power-down and data retention?
The 71V3577S75PFGI8 enters ultra-low-power sleep mode when ZZ is driven HIGH, reducing supply current to ≤35 µA while guaranteeing full data retention. The device requires no external refresh and resumes normal operation within tZZR ≤ 100 ns after ZZ returns LOW-enabling rapid wake-up in power-constrained systems.
What is the function of the ADV, ADSP, and ADSC pins on the 71V3577S75PFGI8?
ADV advances the internal burst counter on each rising CLK edge when LOW. ADSP (Address Status from Processor) and ADSC (Address Status from Cache Controller) are synchronous inputs that trigger address register loading; ADSP is gated by CE, while ADSC operates independently-enabling flexible integration with CPU or cache-coherent subsystems.
Can the 71V3577S75PFGI8 be used in a 256K × 18-bit configuration?
Yes, the 71V3577S75PFGI8 is configurable as either 128K × 36-bit or 256K × 18-bit via address pin mapping: in 256K × 18 mode, A17 becomes an address bit (expanding depth), and I/O pins are repurposed to provide 18 data bits plus 2 parity bits (I/OP1–I/OP2), as documented in the functional block diagram and pin configurations.
71V3577S75PFGI8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 100-LQFP
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 4.5Mbit
- Memory Organization:
- 128K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 117 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 7.5 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 100-TQFP (14x14)
71V3577S75PFGI8 FAQ
1.How can I place an order for 71V3577S75PFGI8 through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V3577S75PFGI8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V3577S75PFGI8 reliable?
The price and inventory of 71V3577S75PFGI8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V3577S75PFGI8 is usually 5 days.
3.What payment methods are accepted for 71V3577S75PFGI8?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V3577S75PFGI8 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 71V3577S75PFGI8?
71V3577S75PFGI8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V3577S75PFGI8 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V3577S75PFGI8?
For technical support, including 71V3577S75PFGI8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V3577S75PFGI8 requirements.
6.How does Aetrix verify that 71V3577S75PFGI8 is sourced from the original manufacturer or authorized distributors?
All 71V3577S75PFGI8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V3577S75PFGI8 meets industry standards.
7.What is the process for return or replacement of 71V3577S75PFGI8?
All 71V3577S75PFGI8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V3577S75PFGI8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V3577S75PFGI8 part is unused and in its original packaging.
Return procedure for 71V3577S75PFGI8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V3577S75PFGI8 Tags
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