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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Renesas 71V3577S80BG

Name: 71V3577S80BG
Brand: Renesas
SKU: 71V3577S80BG
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 71V3577S80BG

Manufacturer:: Renesas

Category:: Memory

Package:: 119-BGA

Datasheet:: 71V3577S80BG.pdf

Description:: IC SRAM 4.5MBIT PAR 119PBGA

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Product details

Overview

71V3577S80BG from Renesas Electronics is a 128K × 36 / 256K × 18, 3.3V synchronous SRAM with flow-through outputs, burst counter, and single-cycle deselect. It delivers 8.0ns access time at up to 100MHz clock frequency, supports linear/interleaved burst modes via LBO input, and operates across industrial temperature range (–40°C to +85°C). Used in high-bandwidth cache and buffer subsystems for networking and telecom infrastructure.

For engineers reviewing the 71V3577S80BG datasheet, 71V3577S80BG pinout, 71V3577S80BG application, or 71V3577S80BG equivalent, key selection criteria include TQFP-100 package compatibility, 3.3V core/I/O supply, synchronous burst read/write timing, flow-through output architecture, and industrial-grade power-down (ZZ) and byte-write (BW1–BW4) control.

Technical Context

The 71V3577S80BG implements a synchronous, clock-driven interface with registered address/data inputs and unregistered (flow-through) outputs-enabling deterministic tCD timing without output register latency. Its internal burst address counter advances on ADV=LOW, generating four sequential addresses per initial address, with order determined by LBO state (linear vs. interleaved).

Write operations support global (GW) or byte-selectable (BW1–BW4 + BWE) control, with self-timed write cycles gated by CE, CS0/CS1, ADSP/ADSC, and CLK. Power management includes asynchronous ZZ sleep mode (≤35µA ISB2), CMOS standby (≤35mA ISB1), and full-sleep (≤35µA IZZ) with data retention guaranteed.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Organization	128K × 36 or 256K × 18 - dual-configurable density supporting either wide-data (36-bit) or deep-address (256K) system requirements.
Access Time / Max Frequency	8.0ns / 100MHz - guaranteed performance for industrial-temperature operation, enabling tight timing closure in 100MHz bus systems.
Supply Voltages	VDD = 3.3V ±5%, VDDQ = 3.3V ±5% - separate core and I/O rails allow independent noise management and signal integrity optimization.
Burst Mode Control	LBO pin selects linear or interleaved 4-word burst sequence - critical for cache line alignment with processor or DMA controller addressing patterns.
Power-Down Current	IZZ ≤ 35µA - ultra-low sleep-mode current enables long-term data retention in battery-backed or energy-constrained applications.
Output Architecture	Flow-through (unregistered) outputs - eliminates output register delay, delivering data on same-cycle CLK edge as address latch, reducing read latency.
Package	JEDEC-standard 100-pin TQFP (14mm × 20mm) - surface-mount compatible with standard reflow profiles and automated assembly.

Pinout & Package

71V3577S80BG is packaged in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14mm × 20mm body, 0.5mm pitch, with exposed thermal pad (not electrically connected). Pin 1 marked via corner notch; pin numbering follows standard counter-clockwise convention.

Pin/Terminal	Circuit Role	Design Meaning
A0–A17	Address Inputs	Synchronous address latching on rising CLK edge when ADSP/ADSC active; A0–A16 used for 128K×36, A0–A17 for 256K×18 configuration.
CLK	Clock Input	Primary timing reference; all synchronous inputs sampled on rising edge; defines tCYC (10ns min for 8.0ns speed grade).
CE, CS0, CS1	Chip Enable / Selects	Three-level chip select hierarchy: CE must be LOW, CS0 HIGH, CS1 LOW for device enable; enables multi-chip memory expansion.
GW, BWE, BW1–BW4	Write Control Inputs	GW enables full 36-bit write; BWE enables byte-write mode; BW1–BW4 individually gate 9-bit data bytes (I/O0–7+I/OP1, etc.).
ADV, ADSP, ADSC	Burst & Address Status	ADSP/ADSC load address register; ADV advances internal burst counter; ADV=LOW initiates burst, ADV=HIGH suspends burst.
LBO, ZZ, OE	Mode & Output Control	LBO selects burst order (LOW=linear, HIGH=interleaved); ZZ=HIGH enters low-power sleep; OE=LOW enables flow-through outputs.
I/O0–I/O31, I/OP1–I/OP4	Data I/O	36-bit bidirectional data bus; inputs registered on CLK rise; outputs flow-through (no register), enabling zero-cycle output latency.
VDD, VDDQ, VSS	Power & Ground	VDD (core), VDDQ (I/O), and VSS (ground) require separate decoupling; VDDQ must track VDD within ±0.1V for signal integrity.

Key Features

Feature	Design Value
Flow-through output architecture	Eliminates output register delay: data appears on I/O pins within tCD (8.0ns) after CLK rise, critical for low-latency cache reads.
Configurable burst order (LBO)	Hardware-selectable linear or interleaved 4-word burst sequences align with x86 or RISC processor cache line fetch patterns.
Single-cycle deselect	Device exits active state and enters standby within one CLK cycle upon CE/CS deassertion-reducing bus turnaround overhead.
Byte-write granularity (BW1–BW4)	Four independent 9-bit write masks enable partial-word updates without read-modify-write, preserving data coherency in multi-threaded systems.
Industrial temperature support	Rated for –40°C to +85°C operation with full AC/DC specifications-validated for base station, industrial PLC, and transportation control systems.

Applications

Networking Packet Buffer	Telecom Line Card Cache
Use Scenario: High-speed packet buffering in 10G Ethernet switch ASICs requiring low-latency, burst-capable memory for ingress/egress queues. IC Role / Device Role / Timing Role: Synchronous SRAM serving as first-level packet descriptor cache, interfacing directly with MAC and traffic manager logic. Use Value: 8.0ns tCD and flow-through outputs reduce queue lookup latency by ≥2.5ns versus registered-output SRAMs, improving worst-case packet processing throughput.	Use Scenario: Line card control plane memory in carrier-grade SDH/SONET equipment operating continuously at elevated ambient temperatures. IC Role / Device Role / Timing Role: Burst-accessible SRAM storing real-time alarm tables, configuration registers, and protocol state machines. Use Value: Industrial-grade –40°C to +85°C rating and 35µA IZZ sleep current ensure reliable operation during thermal stress and power-loss recovery events.
Industrial PLC Data Log	Avionics Sensor Interface Buffer
Use Scenario: Cyclic data logging in programmable logic controllers where deterministic burst writes capture sensor snapshots without CPU intervention. IC Role / Device Role / Timing Role: Memory-mapped SRAM buffer accepting burst writes from DMA engine triggered by timer or external interrupt. Use Value: Byte-write enables selective update of timestamp and status fields within 36-bit log entries, minimizing bus bandwidth and flash wear.	Use Scenario: Real-time sensor fusion buffer in flight control computers requiring radiation-tolerant, low-jitter memory for inertial measurement unit (IMU) data aggregation. IC Role / Device Role / Timing Role: Synchronous SRAM acting as time-aligned FIFO between multiple 16-bit ADCs and FPGA-based Kalman filter engine. Use Value: Separate VDD/VDDQ rails isolate analog-sensitive I/O from digital core noise; flow-through outputs prevent pipeline stalls in hard-real-time loops.

Networking Packet Buffer

Telecom Line Card Cache

Use Scenario: High-speed packet buffering in 10G Ethernet switch ASICs requiring low-latency, burst-capable memory for ingress/egress queues.

IC Role / Device Role / Timing Role: Synchronous SRAM serving as first-level packet descriptor cache, interfacing directly with MAC and traffic manager logic.

Use Value: 8.0ns tCD and flow-through outputs reduce queue lookup latency by ≥2.5ns versus registered-output SRAMs, improving worst-case packet processing throughput.

Use Scenario: Line card control plane memory in carrier-grade SDH/SONET equipment operating continuously at elevated ambient temperatures.

IC Role / Device Role / Timing Role: Burst-accessible SRAM storing real-time alarm tables, configuration registers, and protocol state machines.

Use Value: Industrial-grade –40°C to +85°C rating and 35µA IZZ sleep current ensure reliable operation during thermal stress and power-loss recovery events.

Industrial PLC Data Log

Avionics Sensor Interface Buffer

Use Scenario: Cyclic data logging in programmable logic controllers where deterministic burst writes capture sensor snapshots without CPU intervention.

IC Role / Device Role / Timing Role: Memory-mapped SRAM buffer accepting burst writes from DMA engine triggered by timer or external interrupt.

Use Value: Byte-write enables selective update of timestamp and status fields within 36-bit log entries, minimizing bus bandwidth and flash wear.

Use Scenario: Real-time sensor fusion buffer in flight control computers requiring radiation-tolerant, low-jitter memory for inertial measurement unit (IMU) data aggregation.

IC Role / Device Role / Timing Role: Synchronous SRAM acting as time-aligned FIFO between multiple 16-bit ADCs and FPGA-based Kalman filter engine.

Use Value: Separate VDD/VDDQ rails isolate analog-sensitive I/O from digital core noise; flow-through outputs prevent pipeline stalls in hard-real-time loops.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
CY7C1371DV33-100AXC	128K × 32 organization, 100MHz, 100-pin TQFP, but lacks LBO-controlled burst order and uses different byte-enable scheme (BW0–BW3 for 8-bit bytes).	Supports 32-bit bus width only; no 256K × 18 mode; burst sequence fixed to interleaved; requires PCB redesign for 36-bit data path.	Select when 32-bit interface suffices and burst order flexibility is not required; verify timing compatibility with ADV/ADSP handshake.
AS7C3256A-10JIN	32K × 8 organization, 10ns access, 32-pin SOJ; asynchronous interface, no burst counter, no flow-through outputs, no ZZ sleep mode.	Targeted at legacy microcontroller systems with simple address/data buses; unsuitable for high-speed burst-oriented architectures.	Consider only for cost-sensitive, non-burst, low-frequency control applications; not a functional or pin-compatible alternative.

Compared with CY7C1371DV33-100AXC and AS7C3256A-10JIN, the 71V3577S80BG uniquely combines 36-bit/18-bit dual-density, hardware-selectable burst order, flow-through outputs, and industrial-grade sleep mode-making it irreplaceable in high-performance, thermally demanding burst-memory subsystems.

Availability

71V3577S80BG is available at Aetrix Electronics and suitable for networking packet buffers, telecom line card caches, industrial PLC data logs, and avionics sensor interface buffers requiring stable component supply, long-term lifecycle support, and industrial-temperature qualification.

Supply support for 71V3577S80BG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The 71V3577S series was designed specifically for high-bandwidth, low-latency synchronous memory applications in telecom switching, network acceleration, and real-time control systems requiring burst access and industrial reliability.

FAQ

What memory configurations does the 71V3577S80BG support?

The 71V3577S80BG supports two configurable organizations: 128K × 36 (4.608Mb) and 256K × 18 (4.608Mb), selectable via address pin usage (A0–A16 for 128K×36; A0–A17 for 256K×18). Both configurations deliver identical density and timing, allowing flexible system-level data bus width trade-offs without changing the 71V3577S80BG part number or footprint.

How does the LBO pin affect burst behavior in the 71V3577S80BG?

The LBO pin on the 71V3577S80BG statically selects burst order: LBO = LOW enables linear burst (00→01→10→11), while LBO = HIGH enables interleaved burst (00→01→11→10). This selection occurs at power-up or reset and must remain static during operation. The 71V3577S80BG uses A0/A1 to generate the four burst addresses, and LBO determines their sequence-critical for matching processor cache line fetch patterns.

Does the 71V3577S80BG support true flow-through outputs, and what is the timing impact?

Yes, the 71V3577S80BG implements true flow-through outputs: data appears on I/O pins within tCD (8.0ns max) after the rising CLK edge, with no output register delay. This architecture eliminates one clock cycle of latency compared to registered-output SRAMs, directly reducing read turnaround time in burst-intensive applications like packet forwarding engines and real-time DSP buffers.

What are the power-down modes supported by the 71V3577S80BG, and how do they differ?

The 71V3577S80BG supports three power states: (1) Active (IDD ≤ 180mA @ 100MHz), (2) CMOS Standby (ISB1 ≤ 35mA, CE/CS deselected), and (3) Full Sleep (IZZ ≤ 35µA, ZZ = HIGH). Sleep mode gates the internal clock and reduces current by >99.9% versus active mode while guaranteeing data retention-essential for energy-constrained or fail-safe systems using the 71V3577S80BG.

Is the 71V3577S80BG pin-compatible with other devices in the 71V3577/79 family?

The 71V3577S80BG shares identical 100-pin TQFP pinout with all speed grades (6.5ns, 7.5ns, 8.0ns, 8.5ns) and temperature grades (commercial/industrial) of the 71V3577S series. However, it is not pin-compatible with the 71V3579S (256K×18-only) due to differing address pin assignments (A16 vs. A17) and BW3/BW4 functionality-always verify configuration mode and pin mapping before substitution.

71V3577S80BG Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: 119-BGA

Packaging:: Tray

Product Status:: Obsolete

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: SRAM

Technology:: SRAM - Synchronous, SDR

Memory Size:: 4.5Mbit

Memory Organization:: 128K x 36

Memory Interface:: Parallel

Clock Frequency:: 100 MHz

Write Cycle Time - Word, Page:: -

Access Time:: 8 ns

Voltage - Supply:: 3.135V ~ 3.465V

Operating Temperature:: 0°C ~ 70°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 119-PBGA (14x22)

71V3577S80BG FAQ

1.How can I place an order for 71V3577S80BG through Aetrix?

Please submit a Request for Quotation (RFQ) for 71V3577S80BG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 71V3577S80BG reliable?

The price and inventory of 71V3577S80BG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V3577S80BG is usually 5 days.

3.What payment methods are accepted for 71V3577S80BG?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V3577S80BG transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 71V3577S80BG?

71V3577S80BG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 71V3577S80BG order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 71V3577S80BG?

For technical support, including 71V3577S80BG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V3577S80BG requirements.

6.How does Aetrix verify that 71V3577S80BG is sourced from the original manufacturer or authorized distributors?

All 71V3577S80BG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V3577S80BG meets industry standards.

7.What is the process for return or replacement of 71V3577S80BG?

All 71V3577S80BG units undergo pre-shipment inspection (PSI). If there is an issue with 71V3577S80BG, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 71V3577S80BG part is unused and in its original packaging.

Return procedure for 71V3577S80BG:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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