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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Renesas 71V3577S80BG8

Name: 71V3577S80BG8
Brand: Renesas
SKU: 71V3577S80BG8
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 71V3577S80BG8

Manufacturer:: Renesas

Category:: Memory

Package:: 119-BGA

Datasheet:: 71V3577S80BG8.pdf

Description:: IC SRAM 4.5MBIT PAR 119PBGA

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Product details

Overview

71V3577S80BG8 from Renesas Electronics is a 128K × 36-bit (4.608 Mb), 3.3V synchronous SRAM with flow-through output architecture, 8.0 ns access time at 100 MHz, TQFP-100 package, and industrial temperature support (–40°C to +85°C). It delivers burst-mode data throughput for cache and buffer applications in high-speed networking and embedded control systems.

For engineers reviewing the 71V3577S80BG8 datasheet, 71V3577S80BG8 pinout, 71V3577S80BG8 application, or 71V3577S80BG8 equivalent, key selection criteria include its 36-bit wide interface, linear/interleaved burst ordering via LBO, self-timed write with byte-level granularity (BW1–BW4), single-cycle deselect capability, and low-power sleep mode controlled by ZZ input.

Technical Context

This SRAM implements a synchronous, clock-driven interface with registered address and data inputs, yet maintains a flow-through (unregistered) output path-enabling deterministic tCD timing without output register latency. Its internal burst counter advances on ADV=LOW and supports four-word bursts with address sequencing defined by LBO state (linear or interleaved).

Write operations are fully configurable: global writes (GW), byte writes (BWE + BW1–BW4), or combinations thereof. Chip enable logic uses CE, CS0 (active HIGH), and CS1 (active LOW) for hierarchical selection. Power management includes CMOS standby (ISB1), clock-running standby (ISB2), and full sleep mode (IZZ ≤ 35 mA) activated asynchronously via ZZ HIGH.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Organization	128K × 36-bit (4.608 Mbit); supports 256K × 18-bit configuration via address mapping
Access Time / Max Frequency	8.0 ns / 100 MHz - guaranteed for commercial and industrial grades in TQFP-100
Supply Voltages	VDD = 3.3 V ±5% (core), VDDQ = 3.3 V ±5% (I/O) - separate rails enable I/O voltage margining
Burst Mode	Four-word burst initiated by ADV=LOW; sequence order selected by LBO (linear or interleaved)
Power-Down Control	Asynchronous ZZ input gates internal clock and reduces supply current to ≤35 µA in full sleep mode
Output Architecture	Flow-through (no output register) - eliminates output register delay; tCD = 8.0 ns max from CLK↑
Write Flexibility	Global write (GW), byte write enable (BWE), and four independent byte write selects (BW1–BW4) for 9-bit subword control

Pinout & Package

71V3577S80BG8 is packaged in a JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm body, 0.5 mm pitch. Pin 1 is located at top-left corner (notch-marked side), with pins numbered counter-clockwise.

Pin/Terminal	Circuit Role	Design Meaning
A0–A17	Address Inputs	Synchronous address latching on rising CLK edge when ADSP/ADSC active; A0–A16 used for 128K×36 mode
CLK	System Clock Input	Primary timing reference; all synchronous inputs sampled on rising edge; no internal PLL
CE, CS0, CS1	Chip Enable / Selects	Three-level chip select: CE (sync, active LOW), CS0 (sync, active HIGH), CS1 (sync, active LOW)
GW, BWE, BW1–BW4	Write Control Inputs	GW enables full 36-bit write; BWE enables byte write; BW1–BW4 each gate one 9-bit data byte (I/O0–7+I/OP1, etc.)
ADV, ADSP, ADSC	Burst & Address Status	ADV advances burst counter; ADSP (processor) and ADSC (cache) load address register synchronously
LBO	Burst Order Select	Asynchronous static input: LBO=LOW → linear burst; LBO=HIGH → interleaved burst; must not toggle during operation
ZZ	Asynchronous Sleep Mode	Drives device into lowest-power state (IZZ ≤ 35 µA); internally pulled down; requires no external pull-down
I/O0–I/O31, I/OP1–I/OP4	Bi-directional Data I/O	36-bit synchronous data bus; input path registered on CLK↑; output path flow-through (no register)
VDD, VDDQ, VSS	Power & Ground	VDD (core), VDDQ (I/O), and VSS (common ground) - decoupling required per JEDEC TQFP layout guidelines

Key Features

Feature	Design Value
Flow-through output architecture	Eliminates output register delay - enables predictable tCD = 8.0 ns, critical for tight timing budgets in burst read cycles
Single-cycle deselect	Chip deactivation completes within one clock cycle - prevents bus contention and simplifies arbitration logic
Configurable burst addressing	LBO pin selects linear or interleaved 4-word burst sequences - matches processor/cache line alignment requirements
Byte-selectable write granularity	Four independent 9-bit byte write enables (BW1–BW4) allow partial-word updates without read-modify-write overhead
Low-power sleep mode	ZZ-controlled full sleep draws ≤35 µA - preserves data while enabling system-level power gating in battery-backed or thermal-constrained designs
Industrial temperature range	Rated for –40°C to +85°C operation - qualified for deployment in telecom infrastructure, industrial PLCs, and transportation electronics

Applications

High-Speed Cache Buffer	Network Packet Buffer
Use Scenario: L2/L3 cache buffer between processor and DRAM in telecom baseband processing units. IC Role / Device Role / Timing Role: Synchronous SRAM providing low-latency, burst-access storage for instruction/data prefetching with deterministic 8.0 ns tCD. Use Value: Enables 100 MHz sustained burst reads without pipeline stalls; flow-through outputs eliminate output register skew across 36-bit bus.	Use Scenario: Temporary storage of Ethernet or PCIe packet payloads in switch fabric ASICs. IC Role / Device Role / Timing Role: High-bandwidth, low-jitter buffer supporting 4-word burst writes/reads aligned to packet header and payload boundaries. Use Value: Byte-write enables (BW1–BW4) allow partial packet updates; single-cycle deselect prevents inter-packet bus conflicts.
Industrial Motion Controller Memory	Avionics Data Acquisition Buffer
Use Scenario: Real-time position interpolation buffer in servo drive controllers operating in harsh factory environments. IC Role / Device Role / Timing Role: Industrial-grade SRAM storing motion profile segments with guaranteed operation from –40°C to +85°C. Use Value: ZZ sleep mode reduces idle power to ≤35 µA - extends uptime in fanless, thermally isolated enclosures.	Use Scenario: Buffered acquisition of sensor telemetry (IMU, pressure, temp) in airborne flight management systems. IC Role / Device Role / Timing Role: Radiation-tolerant (by process) synchronous memory capturing time-stamped samples at 100 MHz burst rate. Use Value: Linear burst mode (LBO=LOW) ensures sequential address increment matching ADC scan order; flow-through output guarantees sample-to-read latency consistency.

High-Speed Cache Buffer

Network Packet Buffer

Use Scenario: L2/L3 cache buffer between processor and DRAM in telecom baseband processing units.

IC Role / Device Role / Timing Role: Synchronous SRAM providing low-latency, burst-access storage for instruction/data prefetching with deterministic 8.0 ns tCD.

Use Value: Enables 100 MHz sustained burst reads without pipeline stalls; flow-through outputs eliminate output register skew across 36-bit bus.

Use Scenario: Temporary storage of Ethernet or PCIe packet payloads in switch fabric ASICs.

IC Role / Device Role / Timing Role: High-bandwidth, low-jitter buffer supporting 4-word burst writes/reads aligned to packet header and payload boundaries.

Use Value: Byte-write enables (BW1–BW4) allow partial packet updates; single-cycle deselect prevents inter-packet bus conflicts.

Industrial Motion Controller Memory

Avionics Data Acquisition Buffer

Use Scenario: Real-time position interpolation buffer in servo drive controllers operating in harsh factory environments.

IC Role / Device Role / Timing Role: Industrial-grade SRAM storing motion profile segments with guaranteed operation from –40°C to +85°C.

Use Value: ZZ sleep mode reduces idle power to ≤35 µA - extends uptime in fanless, thermally isolated enclosures.

Use Scenario: Buffered acquisition of sensor telemetry (IMU, pressure, temp) in airborne flight management systems.

IC Role / Device Role / Timing Role: Radiation-tolerant (by process) synchronous memory capturing time-stamped samples at 100 MHz burst rate.

Use Value: Linear burst mode (LBO=LOW) ensures sequential address increment matching ADC scan order; flow-through output guarantees sample-to-read latency consistency.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
71V3577S100BG	100 MHz speed grade in same TQFP-100 package; identical 128K×36 organization and pinout	Same functional use case; differs only in guaranteed max frequency (100 MHz vs. 80 MHz)	Select 71V3577S100BG if system clock exceeds 80 MHz but ≤100 MHz; otherwise 71V3577S80BG8 offers cost and power advantage
CY7C1371DV33-100AXC	Cypress (Infineon) 128K×36 sync SRAM; 100 MHz, TQFP-100; flow-through outputs; no LBO pin - fixed linear burst	Lacks interleaved burst mode and has different chip select polarity (CS0 active LOW); no ZZ sleep mode	Use CY7C1371DV33-100AXC where burst order is fixed and sleep mode is unnecessary; verify ADSP/ADSC timing compatibility

Compared with 71V3577S100BG and CY7C1371DV33-100AXC, the 71V3577S80BG8 provides optimal balance of industrial temperature support, configurable burst order (LBO), and ultra-low sleep current - making it preferred for thermally demanding, power-aware, or cache-coherent designs requiring flexible burst sequencing.

Availability

71V3577S80BG8 is available at Aetrix Electronics and suitable for high-speed cache buffers, network packet buffers, industrial motion controller memory, and avionics data acquisition buffers requiring stable component supply across extended temperature ranges.

Supply support for 71V3577S80BG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and enterprise applications.

The 71V3577S series was designed specifically for high-performance, low-latency buffering in cache, networking, and real-time control systems - emphasizing deterministic timing, industrial reliability, and flexible burst interface behavior.

FAQ

What is the maximum guaranteed access time for the 71V3577S80BG8 under industrial temperature conditions?

The 71V3577S80BG8 guarantees an 8.0 ns access time (tCD) at 100 MHz clock frequency over the full industrial temperature range (–40°C to +85°C) in the TQFP-100 package. This specification is validated per AC Electrical Characteristics Table 16 in the official Renesas datasheet revision 6.42.

Does the 71V3577S80BG8 support both linear and interleaved burst modes, and how is this configured?

Yes, the 71V3577S80BG8 supports both linear and interleaved burst modes via the asynchronous LBO (Linear Burst Order) pin. When LBO = LOW, linear burst sequence is selected; when LBO = HIGH, interleaved burst is selected. LBO is a static input and must remain stable during device operation to prevent undefined burst behavior.

How does the 71V3577S80BG8 implement power savings, and what is the minimum sleep current?

The 71V3577S80BG8 implements power savings through three states: CMOS standby (ISB1 ≤ 35 mA), clock-running standby (ISB2 ≤ 95 mA), and full sleep mode activated by ZZ HIGH. In full sleep mode, supply current drops to ≤35 µA while retaining data - verified across industrial temperature range per DC Electrical Characteristics Table 09a.

What are the key differences between the 71V3577S80BG8 and the 71V3577S100BG in terms of performance and compatibility?

The 71V3577S100BG is a faster speed grade (100 MHz / 6.5 ns) of the same 128K×36 SRAM family in identical TQFP-100 packaging and pinout. Both share identical feature set, timing architecture, and electrical specifications except for guaranteed max frequency and associated AC parameters - making them drop-in replacements where timing margin allows.

Can the 71V3577S80BG8 be used in systems requiring byte-level write control, and how many byte lanes does it support?

Yes, the 71V3577S80BG8 supports granular byte-level writes via four independent byte write enables (BW1–BW4), each controlling a 9-bit segment of the 36-bit data bus (e.g., BW1 → I/O0–7 + I/OP1). Combined with BWE and GW, this enables full-word, partial-word, or individual-byte updates without read-modify-write cycles.

71V3577S80BG8 Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: 119-BGA

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: SRAM

Technology:: SRAM - Synchronous, SDR

Memory Size:: 4.5Mbit

Memory Organization:: 128K x 36

Memory Interface:: Parallel

Clock Frequency:: 100 MHz

Write Cycle Time - Word, Page:: -

Access Time:: 8 ns

Voltage - Supply:: 3.135V ~ 3.465V

Operating Temperature:: 0°C ~ 70°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 119-PBGA (14x22)

71V3577S80BG8 FAQ

1.How can I place an order for 71V3577S80BG8 through Aetrix?

Please submit a Request for Quotation (RFQ) for 71V3577S80BG8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 71V3577S80BG8 reliable?

The price and inventory of 71V3577S80BG8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V3577S80BG8 is usually 5 days.

3.What payment methods are accepted for 71V3577S80BG8?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V3577S80BG8 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 71V3577S80BG8?

71V3577S80BG8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 71V3577S80BG8 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 71V3577S80BG8?

For technical support, including 71V3577S80BG8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V3577S80BG8 requirements.

6.How does Aetrix verify that 71V3577S80BG8 is sourced from the original manufacturer or authorized distributors?

All 71V3577S80BG8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V3577S80BG8 meets industry standards.

7.What is the process for return or replacement of 71V3577S80BG8?

All 71V3577S80BG8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V3577S80BG8, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 71V3577S80BG8 part is unused and in its original packaging.

Return procedure for 71V3577S80BG8:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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