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Renesas 71V3577S80BGG
- Part No.:
- 71V3577S80BGG
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 119-BGA
- Datasheet:
-
71V3577S80BGG.pdf
- Description:
- IC SRAM 4.5MBIT PAR 119PBGA
- Quantity:
- Payment:
- Shipping:
Inventory:2,899
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Product details
Overview
71V3577S80BGG from Renesas Electronics is a 128K × 36-bit (4.608 Mb), 3.3V synchronous SRAM with flow-through output architecture, 8.0 ns access time at 100 MHz clock frequency, and JEDEC-standard 119-ball BGA (BGG) package. It supports linear/interleaved burst modes via LBO pin, single-cycle deselect, and self-timed write with global/byte write control - deployed in high-speed cache buffers and network packet memory subsystems.
For engineers reviewing the 71V3577S80BGG datasheet, 71V3577S80BGG pinout, 71V3577S80BGG application, or 71V3577S80BGG equivalent, key selection criteria include its 3.3V I/O compatibility, industrial temperature support (–40°C to +85°C), TQFP/BGA package variants, burst counter timing behavior, and flow-through vs. registered output path trade-offs in latency-critical systems.
Technical Context
This SRAM implements a synchronous, clock-driven interface with dual address status inputs (ADSP for processor, ADSC for cache controller), enabling precise address latching coordination. Its internal burst counter advances on ADV=LOW and selects sequence order (linear or interleaved) via static LBO input - no external counter logic required.
The device features separate core (VDD) and I/O (VDDQ) power domains, asynchronous ZZ sleep mode (≤35 µA), and four independent byte-write enables (BW1–BW4) with global write override (GW). All synchronous inputs meet strict setup/hold timing relative to CLK, while OE remains asynchronous for flexible output gating.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 128K × 36-bit (4.608 Mbit); supports 256K × 18-bit via address remapping |
| Access Time / Max Frequency | 8.0 ns / 100 MHz - guaranteed for commercial & industrial temp ranges in BGA package |
| Supply Voltages | VDD = 3.3 V ±5% (core), VDDQ = 3.3 V ±5% (I/O) - decoupled domains reduce noise coupling |
| Burst Mode Control | LBO pin selects linear (LBO=LOW) or interleaved (LBO=HIGH) 4-word burst sequence - static configuration |
| Power Management | ZZ input enables full sleep mode (IZZ ≤35 µA); ISB1 standby current ≤35 mA at f=0 |
| Operating Temperature | –40°C to +85°C (industrial grade); validated across full voltage and timing margins |
| Output Architecture | Flow-through (unregistered) data path - eliminates output register delay, enabling minimal tCD latency |
Pinout & Package
71V3577S80BGG is packaged in a JEDEC-standard 119-ball fine-pitch BGA (BGG119), 12 mm × 12 mm body, 0.8 mm ball pitch. Pinout conforms to Renesas BG119 layout for 128K × 36 configuration (see Figure 6450 drw 02c).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A16 | Address Inputs | 17-bit address bus; latched synchronously on rising CLK edge with ADSP/ADSC assertion |
| CLK | Clock Input | Primary timing reference; all synchronous operations referenced to rising edge |
| CE, CS0, CS1 | Chip Enable / Selects | 3-input decode (CE=LOW, CS0=HIGH, CS1=LOW) enables device; supports multi-chip addressing |
| GW, BWE, BW1–BW4 | Write Control Inputs | GW writes all 36 bits; BWE gates BWx; BW1–BW4 enable 9-bit bytes (I/O0–7/I/OP1, etc.) |
| ADV, ADSP, ADSC, LBO | Burst & Address Control | ADV advances burst counter; ADSP/ADSC load address register; LBO configures burst order statically |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O | 36-bit bidirectional bus; input path registered, output path flow-through (no latch delay) |
| OE, ZZ | Output & Sleep Control | OE (asynchronous) enables outputs; ZZ (asynchronous) gates CLK and reduces current to ≤35 µA |
Key Features
| Feature | Design Value |
|---|---|
| Flow-through output architecture | Eliminates output register delay - tCD = 8.0 ns matches clock-to-data spec without added latency |
| Single-cycle deselect capability | Device enters high-Z state within one CLK cycle after chip disable - critical for bus arbitration |
| Configurable burst order (LBO) | Hardware-selectable linear or interleaved 4-word sequences - aligns with CPU/cache line fetch patterns |
| Self-timed write cycle | Internal timing resolves write completion without external strobes - simplifies controller logic |
| Dual-supply I/O interface (VDDQ) | Isolates I/O switching noise from core logic - improves signal integrity in mixed-signal systems |
Applications
| High-Speed Cache Buffer | Network Packet Memory |
|---|---|
|
Use Scenario: L2/L3 cache buffer between RISC-V or ARM processor and DRAM controller in telecom baseband units. IC Role / Device Role / Timing Role: Synchronous SRAM providing zero-wait-state instruction/data storage with burst-aligned reads matching CPU prefetch width. Use Value: 8.0 ns tCD and flow-through outputs deliver deterministic sub-10 ns read latency - enabling sustained 100 MHz bus throughput without pipeline stalls. |
Use Scenario: Temporary storage for packet headers and metadata in 10G Ethernet line cards before classification or forwarding. IC Role / Device Role / Timing Role: Burst-capable memory staging buffer interfacing with MAC-layer logic and DMA engines. Use Value: Linear burst mode (LBO=LOW) delivers four consecutive 36-bit words per address - matching 128-bit wide packet header segments for efficient DMA bursts. |
| Industrial PLC Data Logging | Avionics Sensor Fusion Buffer |
|
Use Scenario: Real-time logging of analog sensor samples and motion control commands in ruggedized programmable logic controllers. IC Role / Device Role / Timing Role: Industrial-grade SRAM retaining timestamped data during transient power dips or watchdog resets. Use Value: –40°C to +85°C operation and ZZ sleep mode (IZZ ≤35 µA) ensure reliable data retention during brownouts without backup battery. |
Use Scenario: Intermediate buffer aggregating inertial measurement unit (IMU), GPS, and air data outputs prior to Kalman filter computation in flight control computers. IC Role / Device Role / Timing Role: Low-latency, deterministic memory supporting hard real-time sampling at 1 kHz with jitter-free burst reads. Use Value: Single-cycle deselect and synchronous write with GW/BWE control guarantee atomic 36-bit updates - preventing partial writes during interrupt servicing. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1371DV33-100BZXI | 128K × 32-bit, 100 MHz, 100-pin TQFP only; no BGA option; lacks LBO-configurable burst order | Requires 32-bit data path redesign; no linear/interleaved burst flexibility for cache line alignment | Choose when footprint constraints favor TQFP and burst sequence is fixed by system architecture |
| AS7C3128B-10JCN | 128K × 32-bit, 10 ns, 100-pin TQFP; asynchronous interface; no burst counter or ADV/LBO logic | Higher latency (tAA = 10 ns), no burst capability - unsuitable for cache or packet streaming | Consider only for non-burst, cost-sensitive control-plane buffering where timing margin is relaxed |
Compared with CY7C1371DV33-100BZXI and AS7C3128B-10JCN, the 71V3577S80BGG uniquely combines BGA packaging, industrial temperature rating, configurable burst sequencing, and flow-through latency - making it optimal for space-constrained, high-throughput embedded systems requiring deterministic timing.
Availability
71V3577S80BGG is available at Aetrix Electronics and suitable for high-speed cache buffers, network packet memory, industrial PLC data logging, and avionics sensor fusion buffers requiring stable component supply across extended temperature and long production lifecycles.
Supply support for 71V3577S80BGG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.
The 71V3577S family targets high-performance embedded systems requiring low-latency, burst-capable SRAM - designed specifically for cache coherency, packet buffering, and real-time data acquisition where flow-through timing and industrial reliability are mandatory.
FAQ
What is the maximum operating frequency supported by the 71V3577S80BGG?
The 71V3577S80BGG supports up to 100 MHz clock frequency with 8.0 ns access time, validated across the full industrial temperature range (–40°C to +85°C) and 3.3 V ±5% supply. This speed grade is available in both TQFP and BGA packages, unlike the 6.5 ns variant which is TQFP-only and commercial-grade only.
Does the 71V3577S80BGG support both linear and interleaved burst modes?
Yes, the 71V3577S80BGG supports both burst modes via the LBO (Linear Burst Order) pin: LBO=LOW selects linear sequence (00→01→10→11), LBO=HIGH selects interleaved (00→01→11→10). The pin is static - must be held stable during operation and is internally pulled to VDD if left unconnected.
What is the function of the ADV pin on the 71V3577S80BGG?
The ADV (Burst Address Advance) pin controls burst counter progression: ADV=LOW advances the internal 2-bit counter for the next burst word; ADV=HIGH suspends advancement, holding the current address. This enables burst pause/resume functionality without reissuing the base address.
How does the 71V3577S80BGG handle power-down and sleep modes?
The 71V3577S80BGG offers two low-power states: standby (ISB1 ≤35 mA, CE/CS deasserted) and full sleep (IZZ ≤35 µA, ZZ=HIGH). In sleep mode, CLK is internally gated and data retention is guaranteed - no external refresh or backup power required.
What package type is used for the 71V3577S80BGG?
The 71V3577S80BGG uses a JEDEC-standard 119-ball fine-pitch BGA (BGG119) package, 12 mm × 12 mm body size, 0.8 mm ball pitch. It shares pinout compatibility with the 71V3577S75BGG (7.5 ns) and 71V3577S65BGG (6.5 ns) in the same BGG119 footprint.
71V3577S80BGG Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 119-BGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 4.5Mbit
- Memory Organization:
- 128K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 100 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 8 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 119-PBGA (14x22)
71V3577S80BGG FAQ
1.How can I place an order for 71V3577S80BGG through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V3577S80BGG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V3577S80BGG reliable?
The price and inventory of 71V3577S80BGG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V3577S80BGG is usually 5 days.
3.What payment methods are accepted for 71V3577S80BGG?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V3577S80BGG transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 71V3577S80BGG?
71V3577S80BGG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V3577S80BGG order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V3577S80BGG?
For technical support, including 71V3577S80BGG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V3577S80BGG requirements.
6.How does Aetrix verify that 71V3577S80BGG is sourced from the original manufacturer or authorized distributors?
All 71V3577S80BGG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V3577S80BGG meets industry standards.
7.What is the process for return or replacement of 71V3577S80BGG?
All 71V3577S80BGG units undergo pre-shipment inspection (PSI). If there is an issue with 71V3577S80BGG, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V3577S80BGG part is unused and in its original packaging.
Return procedure for 71V3577S80BGG:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V3577S80BGG Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
Microchip Technology
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24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
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