Renesas 71V3577S80BGG8

Overview

71V3577S80BGG8 from Renesas Electronics is a 128K × 36-bit (4.608 Mb), 3.3V synchronous SRAM with flow-through outputs, burst counter, and single-cycle deselect. It supports 8.0 ns access time at up to 100 MHz clock frequency, operates across industrial temperature range (–40°C to +85°C), and uses JEDEC-standard 119-ball BGA (BGG) packaging. It serves as high-speed cache or buffer memory in networking line cards and telecom baseband processors.

For engineers reviewing the 71V3577S80BGG8 datasheet, 71V3577S80BGG8 pinout, 71V3577S80BGG8 application, or 71V3577S80BGG8 equivalent, key selection criteria include its 8.0 ns tCD timing, linear/interleaved burst mode via LBO input, 3.3V core/I/O supply compatibility, and support for global or byte-level writes with GW/BWE/BWx controls.

Technical Context

The 71V3577S80BGG8 implements a synchronous, clock-driven architecture with registered address, control, and data inputs but unregistered (flow-through) outputs - enabling deterministic read latency directly tied to tCD. Its internal burst counter advances on ADV=LOW and selects sequence order (linear vs. interleaved) via static LBO pin configuration.

Write operations are self-timed and support four modes: global write (GW active), byte-write enabled (BWE active + BW1–BW4), asynchronous OE-controlled output enable, and ZZ-gated sleep mode with guaranteed data retention. All synchronous inputs meet setup/hold timing relative to CLK rising edge.

Key Specifications

Pinout & Package

71V3577S80BGG8 is packaged in a 119-ball fine-pitch BGA (BGG119), JEDEC MO-207AC compliant, with 14 mm × 20 mm body size and 0.8 mm ball pitch. Pinout follows BG119 layout for 128K × 36 configuration (per Renesas doc 6450 drw 02c).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1371DV33-100BZXI and AS7C33128PFS-10BIN, the 71V3577S80BGG8 delivers superior timing (8.0 ns vs. 10 ns), configurable burst ordering (LBO), and native support for both processor (ADSP) and cache controller (ADSC) address handshaking - making it optimal for high-performance, multi-protocol memory subsystems.

Availability

71V3577S80BGG8 is available at Aetrix Electronics and suitable for high-speed network packet buffers, baseband DSP caches, industrial PLC data loggers, and radar signal processing FIFOs requiring stable component supply across extended product lifecycles.

Supply support for 71V3577S80BGG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The 71V3577S family targets high-bandwidth, low-latency memory expansion in telecom, networking, and real-time embedded systems - emphasizing burst efficiency, industrial temperature reliability, and flexible write granularity.

FAQ

What is the maximum operating frequency supported by the 71V3577S80BGG8?

The 71V3577S80BGG8 supports up to 100 MHz clock frequency with guaranteed 8.0 ns access time (tCD). This speed grade is validated across the full industrial temperature range (–40°C to +85°C) and applies specifically to the 119-ball BGA package variant. Higher speeds (e.g., 117 MHz at 7.5 ns) are only available in TQFP packages and commercial temperature grades.

Does the 71V3577S80BGG8 support both linear and interleaved burst modes?

Yes, the 71V3577S80BGG8 supports both linear and interleaved 4-word burst sequences via the LBO (Linear Burst Order) pin. When LBO = LOW, the device executes linear addressing (00→01→10→11); when LBO = HIGH, it uses interleaved order (00→01→11→10). This selection is static and must remain stable during operation - changing LBO mid-burst may corrupt address sequencing.

How does the flow-through output architecture of the 71V3577S80BGG8 affect system timing?

Unlike pipelined SRAMs, the 71V3577S80BGG8 uses a flow-through output path - meaning data appears at I/O pins after exactly tCD (8.0 ns max) from the CLK rising edge, with no additional register delay. This eliminates output-stage uncertainty, simplifies timing closure in high-speed synchronous buses, and enables precise alignment of read data with downstream logic sampling clocks.

Can the 71V3577S80BGG8 be used in systems requiring data retention during power-down?

Yes, the 71V3577S80BGG8 supports full data retention in Sleep Mode when the ZZ pin is driven HIGH. In this state, internal clock gating reduces ICC to 30 mA max while preserving all 4.608 Mbit contents. The device exits sleep mode within tZZR (100 ns max) after ZZ returns LOW, provided CE/CS0/CS1 are properly asserted before the next access.

What are the voltage requirements for VDD and VDDQ on the 71V3577S80BGG8?

The 71V3577S80BGG8 requires VDD = 3.3 V ±5% (3.135 V to 3.465 V) for core logic and VDDQ = 3.3 V ±5% (3.135 V to 3.465 V) for I/O drivers. These supplies must be independently decoupled per Renesas layout recommendations. VDD and VDDQ may be supplied from the same regulator only if ripple and transient coupling are controlled below 50 mV peak-to-peak.