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Renesas 71V3577S80BGGI

Part No.:
71V3577S80BGGI
Manufacturer:
Renesas
Category:
Memory
Package:
119-BGA
Datasheet:
Aetrix71V3577S80BGGI.pdf
Description:
IC SRAM 4.5MBIT PAR 119PBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,778

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Product details

Overview

71V3577S80BGGI from Renesas Electronics is a 128K × 36-bit (4.608 Mb), 3.3V synchronous SRAM with flow-through outputs, burst counter, and single-cycle deselect. It supports 8.0 ns access time at up to 100 MHz clock frequency, operates across –40°C to +85°C industrial temperature range, and uses JEDEC-standard 119-ball BGA (BGG) package. It serves as high-bandwidth cache or buffer memory in network packet processors and telecom line cards.

For engineers reviewing the 71V3577S80BGGI datasheet, 71V3577S80BGGI pinout, 71V3577S80BGGI application, or 71V3577S80BGGI equivalent, key selection considerations include its 128K × 36 organization, TQFP/BGA package options, linear/interleaved burst mode via LBO, self-timed write with GW/BWE/BWx controls, and industrial-grade power-down (ZZ) support.

Technical Context

The 71V3577S80BGGI implements a synchronous, clock-driven architecture with registered address, control, and data inputs, but flow-through (unregistered) outputs - enabling minimal clock-to-data latency. Its internal burst address counter advances on ADV=LOW and selects sequence order (linear or interleaved) via static LBO input.

Write operations are fully self-timed: global write (GW) or byte-write (BW1–BW4, enabled by BWE) initiates a cycle that completes without external timing constraints. Chip enable (CE), CS0/CS1, ADSP/ADSC, and OE provide hierarchical, multi-level selectivity for integration into complex bus systems with cache coherency requirements.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Organization128K × 36 bits (4.608 Mbit); supports 256K × 18 mode via pin strapping - enables flexible data bus width matching.
Access Time / Max Frequency8.0 ns access time at 100 MHz clock; guarantees deterministic read latency for real-time packet buffering.
Supply VoltagesVDD = 3.3 V ±5% (core), VDDQ = 3.3 V ±5% (I/O); separate supplies allow I/O voltage domain isolation in mixed-signal systems.
Burst Mode ControlLBO pin selects linear or interleaved 4-word burst sequence; critical for optimizing cache line fill efficiency in RISC/DSP architectures.
Power ManagementZZ input enables full sleep mode (IZZ ≤ 35 µA); reduces standby power in always-on telecom infrastructure.
Operating Temperature–40°C to +85°C industrial grade; qualified for deployment in uncontrolled ambient environments like base station cabinets.
Package119-ball fine-pitch BGA (BGG); JEDEC-compliant footprint supports high-density PCB layouts with thermal vias under die.

Pinout & Package

71V3577S80BGGI is packaged in a JEDEC-standard 119-ball fine-pitch ball grid array (BGG119), with 1.0 mm ball pitch, 12 mm × 12 mm body size, and exposed thermal pad. Pinout conforms to Renesas BG119 layout for 128K × 36 configuration.

Pin/TerminalCircuit RoleDesign Meaning
A0–A16Address InputsSynchronous address latching on rising CLK edge gated by ADSP/ADSC; A0–A16 define 128K-word space (17-bit address).
CLKSystem Clock InputPrimary timing reference; all synchronous inputs sampled on rising edge; no internal clock division.
GW, BWE, BW1–BW4Write Control InputsGW enables full 36-bit write; BWE enables byte-write mode; BW1–BW4 individually gate 9-bit data bytes (I/O0–7+I/OP1, etc.).
ADV, ADSP, ADSCBurst & Address StatusADV advances internal burst counter; ADSP (processor) and ADSC (cache controller) load address register asynchronously to CLK edge.
LBO, ZZConfiguration & SleepLBO selects burst order (LOW = linear); ZZ HIGH forces full sleep - disables CLK internally while retaining data.
I/O0–I/O31, I/OP1–I/OP4Data I/O36-bit bidirectional data bus; flow-through output path eliminates output register delay; I/OP1–I/OP4 are parity bits.
VDD, VDDQ, VSSPower & GroundDual 3.3 V supplies: VDD powers core logic, VDDQ powers I/O drivers; dedicated VSS balls ensure low-impedance return paths.

Key Features

FeatureDesign Value
Flow-through output architectureEliminates output register delay - delivers first valid data within tCD = 8.0 ns of CLK rise, critical for low-latency buffering.
Single-cycle deselectChip deactivation completes in one clock cycle (no pipeline flush required), enabling rapid context switching in multi-threaded controllers.
Self-timed write cycleGW or BWx assertion triggers internally timed write completion - removes need for external write-strobe timing control.
Linear/interleaved burst modeLBO pin statically configures burst address sequence to match processor cache line ordering (e.g., MIPS vs. PowerPC).
Industrial temperature operationValidated performance from –40°C to +85°C ensures reliability in outdoor telecom, industrial PLC, and transportation electronics.

Applications

Packet Buffering in Network Switch ASICsCache Memory for DSP-Based Radar Processors

Use Scenario: Stores ingress/egress packet headers and payloads in Layer 2/3 switches before forwarding decisions.

IC Role / Device Role / Timing Role: High-speed, low-latency SRAM providing 36-bit-wide parallel access to support 10 Gbps+ line-rate buffering.

Use Value: 8.0 ns tCD and flow-through outputs minimize queuing delay; burst mode aligns with 128-byte cache line transfers.

Use Scenario: Acts as L1 instruction/data cache for fixed-point DSPs executing real-time beamforming algorithms.

IC Role / Device Role / Timing Role: Synchronous SRAM delivering deterministic 100 MHz read/write cycles to match DSP core timing.

Use Value: Single-cycle deselect and self-timed writes reduce pipeline stalls; industrial temp rating supports airborne radar enclosures.

Baseband Processing in 4G/5G Remote Radio UnitsReal-Time Data Acquisition in Industrial PLCs

Use Scenario: Buffers IQ samples between FPGA-based digital up/down-converters and ARM-based control processors.

IC Role / Device Role / Timing Role: Dual-port-capable SRAM (via CE/CS0/CS1 arbitration) supporting concurrent read/write streams.

Use Value: 119-ball BGA enables compact RF module layout; ZZ sleep mode cuts idle power in battery-backed units.

Use Scenario: Stores sensor fusion data (vibration, temperature, current) sampled at 10 kHz for deterministic control loop execution.

IC Role / Device Role / Timing Role: Deterministic-access memory ensuring jitter-free data availability for hard real-time OS tasks.

Use Value: –40°C to +85°C operation survives factory floor extremes; burst reads accelerate batch data transfer to EtherCAT master.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
CY7C1371DV33-100BAXI128K × 36, 3.3V, 100 MHz, 119-ball BGA - identical organization and speed grade but Cypress (Infineon) silicon; tCD = 8.5 ns vs. 8.0 ns.Same industrial temp range and burst functionality; requires validation of ADSP/ADSC timing compatibility in cache-coherent designs.Select when existing design uses Cypress toolchain or requires second-source assurance with matched pinout.
AS7C33128P-10BIN128K × 36, 3.3V, 100 MHz, 100-pin TQFP - same speed grade but different package; lacks BGA thermal performance and higher pin count limits routing density.Not suitable for space-constrained RF modules; viable for cost-sensitive industrial controllers where TQFP rework is acceptable.Select only if board layout cannot accommodate BGA or thermal dissipation requirements are relaxed.

Compared with CY7C1371DV33-100BAXI and AS7C33128P-10BIN, the 71V3577S80BGGI delivers tighter 8.0 ns tCD timing and optimized BGA thermal characteristics - making it preferred for latency-critical, thermally constrained telecom and defense applications where signal integrity and power efficiency are prioritized over package interchangeability.

Availability

71V3577S80BGGI is available at Aetrix Electronics and suitable for network infrastructure, industrial automation, and aerospace electronics requiring stable component supply, long-term lifecycle support, and guaranteed industrial temperature compliance.

Supply support for 71V3577S80BGGI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The 71V3577S family targets high-performance, low-latency memory subsystems in networking, telecom, and real-time embedded systems - emphasizing burst efficiency, deterministic timing, and industrial reliability.

FAQ

What is the maximum operating frequency supported by the 71V3577S80BGGI?

The 71V3577S80BGGI supports up to 100 MHz clock frequency with 8.0 ns access time, validated across the full –40°C to +85°C industrial temperature range. This speed grade is confirmed for both 128K × 36 and 256K × 18 configurations in the BGG119 package.

Does the 71V3577S80BGGI support both linear and interleaved burst modes?

Yes, the 71V3577S80BGGI supports both burst modes via the LBO (Linear Burst Order) input pin. When LBO = LOW, linear addressing is used; when LBO = HIGH, interleaved addressing is selected. The mode is static and must not change during active operation.

What is the function of the ZZ pin on the 71V3577S80BGGI?

The ZZ pin on the 71V3577S80BGGI enables full sleep mode: when driven HIGH, it gates the internal clock and reduces supply current to ≤35 µA (ISB2), while guaranteeing data retention. An internal pull-down ensures safe default state if left unconnected.

How many byte-write enable signals does the 71V3577S80BGGI provide?

The 71V3577S80BGGI provides four individual byte-write enable inputs - BW1, BW2, BW3, and BW4 - each controlling a 9-bit data byte (plus parity bit). BW1 manages I/O0–I/O7 and I/OP1; BW2 manages I/O8–I/O15 and I/OP2, and so on.

Is the 71V3577S80BGGI pin-compatible with the 71V3579S series?

No, the 71V3577S80BGGI is not pin-compatible with the 71V3579S series. While both share the same BGG119 package footprint, the 71V3579S omits BW3 and BW4 pins and reassigns several NC pins - requiring distinct PCB layouts and signal routing.

71V3577S80BGGI Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
119-BGA
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, SDR
Memory Size:
4.5Mbit
Memory Organization:
128K x 36
Memory Interface:
Parallel
Clock Frequency:
100 MHz
Write Cycle Time - Word, Page:
-
Access Time:
8 ns
Voltage - Supply:
3.135V ~ 3.465V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
119-PBGA (14x22)

71V3577S80BGGI FAQ

1.How can I place an order for 71V3577S80BGGI through Aetrix?

Please submit a Request for Quotation (RFQ) for 71V3577S80BGGI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 71V3577S80BGGI reliable?

The price and inventory of 71V3577S80BGGI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V3577S80BGGI is usually 5 days.

3.What payment methods are accepted for 71V3577S80BGGI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V3577S80BGGI transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 71V3577S80BGGI?

71V3577S80BGGI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 71V3577S80BGGI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 71V3577S80BGGI?

For technical support, including 71V3577S80BGGI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V3577S80BGGI requirements.

6.How does Aetrix verify that 71V3577S80BGGI is sourced from the original manufacturer or authorized distributors?

All 71V3577S80BGGI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V3577S80BGGI meets industry standards.

7.What is the process for return or replacement of 71V3577S80BGGI?

All 71V3577S80BGGI units undergo pre-shipment inspection (PSI). If there is an issue with 71V3577S80BGGI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 71V3577S80BGGI part is unused and in its original packaging.

Return procedure for 71V3577S80BGGI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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