My Inquiry
My Account
Renesas 71V3577S80BGGI8
- Part No.:
- 71V3577S80BGGI8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 119-BGA
- Datasheet:
-
71V3577S80BGGI8.pdf
- Description:
- IC SRAM 4.5MBIT PAR 119PBGA
- Quantity:
- Payment:
- Shipping:
Inventory:3,014
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
71V3577S80BGGI8 from Renesas Electronics is a 128K × 36-bit (4.608 Mbit), 3.3V synchronous SRAM with flow-through output architecture, 8.0 ns access time at up to 100 MHz clock frequency, and industrial temperature range (–40°C to +85°C). It supports linear/interleaved burst mode via LBO input, single-cycle deselect, and self-timed write using GW/BWE/BWx controls - deployed in high-speed cache and buffer subsystems of telecom line cards and network processors.
For engineers reviewing the 71V3577S80BGGI8 datasheet, 71V3577S80BGGI8 pinout, 71V3577S80BGGI8 application, or 71V3577S80BGGI8 equivalent, key selection criteria include its TQFP-100/BGA-119 package compatibility, 3.3V core/I/O supply, flow-through latency-critical read path, burst counter behavior under ADV/LBO control, and ZZ-driven sleep mode for low-power standby.
Technical Context
This SRAM implements a synchronous, register-based address/data input path with no output register - enabling true flow-through read timing where data appears on I/O pins after tCD (≤8.0 ns) from CLK rise. Burst addressing is managed by an internal binary counter synchronized to ADV, with sequence order determined statically by LBO level before operation.
Write control uses hierarchical enable logic: GW enables full 36-bit writes, while BWE gates four independent 9-bit byte writes (BW1–BW4). Chip select is three-input (CE, CS0 HIGH, CS1 LOW), and power management includes asynchronous ZZ sleep entry with guaranteed data retention and tZZR = 100 ns recovery.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 128K × 36-bit (4.608 Mbit); supports 256K × 18-bit via pin multiplexing in same package |
| Access Time / Max Frequency | 8.0 ns / 100 MHz - defines minimum clock cycle (tCYC ≥ 10 ns) for sustained burst reads/writes |
| Supply Voltages | VDD = 3.3 V ±5% (core), VDDQ = 3.3 V ±5% (I/O) - requires separate low-noise regulation for signal integrity |
| Operating Temperature | –40°C to +85°C (industrial grade) - validated for base station and industrial control environments |
| Power Consumption | IDDACT = 180 mA (active, 8 ns), ISB2 = 80 mA (clock-running standby), IZZ = 30 µA (full sleep) - enables dynamic power scaling |
| Burst Mode Control | LBO selects linear or interleaved 4-word burst sequence; ADV advances counter synchronously on rising CLK edge |
| Output Architecture | Flow-through (no output register) - eliminates one clock cycle of output latency vs. pipelined SRAMs |
Pinout & Package
71V3577S80BGGI8 is packaged in a JEDEC-standard 119-ball fine-pitch BGA (BGG119), 14 mm × 20 mm footprint, with 3.3V-compatible I/O and core supply pins distributed across perimeter rows for optimal decoupling. Ball pitch is 0.8 mm; recommended reflow profile complies with J-STD-020.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | 18-bit synchronous address bus; A0–A16 used for 128K×36, A0–A17 for 256K×18 configuration |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O | 36-bit bidirectional data bus (32 data + 4 parity); flow-through output path with no register delay |
| CLK | System Clock Input | Single-ended CMOS clock; all synchronous inputs timed to rising edge; tCH/tCL ≥ 4 ns minimum pulse width |
| ADV, ADSP, ADSC | Burst & Address Status | ADV advances burst counter; ADSP (processor) and ADSC (cache) load address register on falling edge when CE active |
| GW, BWE, BW1–BW4 | Write Control | GW enables full 36-bit write; BWE enables byte write; BW1–BW4 select 9-bit bytes (BW3/BW4 unused in 256K×18 mode) |
| LBO, ZZ | Mode Configuration | LBO (asynchronous) sets burst order; ZZ (asynchronous high) forces sleep mode with <30 µA current and data retention |
| CE, CS0, CS1 | Chip Enable | Three-input chip select: CE LOW + CS0 HIGH + CS1 LOW activates device; enables multi-chip memory expansion |
| VDD, VDDQ, VSS | Power/Ground | Dedicated core (VDD) and I/O (VDDQ) supplies; multiple VSS balls for low-inductance return paths |
Key Features
| Feature | Design Value |
|---|---|
| Flow-through output architecture | Eliminates output register delay - tCD ≤ 8.0 ns enables zero-cycle-read latency in cache pipelines |
| Configurable burst order (LBO) | Hardware-selectable linear or interleaved 4-word burst sequences - matches CPU/cache controller addressing patterns |
| Single-cycle deselect | Device enters high-Z state within one CLK cycle after CE/CS deassertion - prevents bus contention in multi-SRAM systems |
| Self-timed write with byte granularity | GW/BWE/BWx hierarchy allows full-word or per-byte writes without external timing control - simplifies controller logic |
| Asynchronous sleep mode (ZZ) | Reduces ICC to 30 µA while retaining data - enables rapid wake-up (<100 ns tZZR) for burst-oriented traffic shaping |
| Industrial-grade reliability | Qualified per AEC-Q200 stress tests; operates continuously at –40°C to +85°C with full AC/DC specs guaranteed |
Applications
| Telecom Line Card Buffer | Network Processor Cache |
|---|---|
|
Use Scenario: High-throughput packet buffering in 10G/25G Ethernet line cards requiring deterministic latency and burst-aligned memory access. IC Role / Device Role / Timing Role: Primary burst-access SRAM serving as first-level packet descriptor store; interfaces directly to SerDes MAC controllers via 100 MHz synchronous bus. Use Value: 8.0 ns tCD and flow-through outputs reduce read turnaround by one clock cycle versus pipelined alternatives - critical for sub-100 ns packet processing deadlines. |
Use Scenario: Instruction/data cache for multi-core network processors executing deep-pipeline forwarding algorithms. IC Role / Device Role / Timing Role: Low-latency, wide-bus (36-bit) cache memory supporting simultaneous instruction fetch and data load operations. Use Value: Linear/interleaved burst modes align with processor prefetch engines; single-cycle deselect prevents pipeline stalls during context switches. |
| Industrial PLC Data Log | Radar Signal Processing Buffer |
|
Use Scenario: Real-time logging of sensor data in programmable logic controllers operating in harsh factory environments. IC Role / Device Role / Timing Role: Nonvolatile-backed SRAM buffer holding timestamped analog/digital I/O snapshots prior to flash transfer. Use Value: Industrial temp rating (–40°C to +85°C) and ZZ sleep mode enable reliable operation during thermal cycling; 30 µA sleep current extends backup battery life. |
Use Scenario: Intermediate storage for ADC samples in phased-array radar front-ends requiring precise timing alignment across channels. IC Role / Device Role / Timing Role: Synchronous burst buffer capturing 16-bit × 4-channel samples at 100 MSPS with deterministic readout timing. Use Value: ADV-synchronized burst counter ensures phase-coherent sample sequencing; tCD ≤ 8.0 ns guarantees sub-10 ns timing jitter in trigger-to-read paths. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1371DV33-100BZXI | 128K × 36, 100 MHz, 3.3V, TQFP-100 only - no BGA option; tCD = 10 ns (slower than 71V3577S80BGGI8's 8.0 ns) | Preferred where PCB layout constraints favor TQFP and 2 ns higher latency is acceptable | Select when BGA assembly capability is unavailable and industrial temp support is secondary |
| AS7C33128P-10TIN | 128K × 36, 100 MHz, 3.3V, TQFP-100 only - no sleep mode (ZZ), no LBO burst control, no ADV/ADSP/ADSC interface | Suitable for simpler burst-unaware controllers; lacks cache coherency signaling features | Choose for cost-sensitive designs where advanced burst control and low-power sleep are not required |
Compared with CY7C1371DV33-100BZXI and AS7C33128P-10TIN, the 71V3577S80BGGI8 delivers superior timing (8.0 ns tCD), BGA packaging for high-density routing, and full cache-aware control (ADV/ADSP/ADSC/LBO/ZZ) - making it optimal for latency-critical, thermally demanding, and feature-rich embedded systems.
Availability
71V3577S80BGGI8 is available at Aetrix Electronics and suitable for telecom infrastructure, industrial automation, and radar signal processing applications requiring stable component supply, long-term lifecycle support, and guaranteed industrial temperature performance.
Supply support for 71V3577S80BGGI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.
The 71V3577S product line delivers high-speed, low-latency synchronous SRAMs optimized for cache, buffer, and real-time data acquisition systems where deterministic timing and industrial reliability are mandatory.
FAQ
What is the maximum clock frequency supported by the 71V3577S80BGGI8?
The 71V3577S80BGGI8 supports up to 100 MHz clock frequency with an 8.0 ns access time (tCD), verified across the full industrial temperature range (–40°C to +85°C). This speed grade is available in both BGA-119 and TQFP-100 packages, unlike the faster 6.5 ns variant which is TQFP-only and commercial-temp only.
Does the 71V3577S80BGGI8 support both 128K × 36 and 256K × 18 configurations?
Yes, the 71V3577S80BGGI8 is configurable as either 128K × 36 or 256K × 18 depending on address pin usage: A0–A16 define the 128K × 36 space, while A0–A17 enable the 256K × 18 organization. Pinouts differ slightly between modes - see Renesas datasheet figures 2a and 2b for BGA-119 ball mapping.
How does the LBO pin affect burst behavior in the 71V3577S80BGGI8?
The LBO pin on the 71V3577S80BGGI8 statically selects burst order: LBO = LOW enables linear burst (00→01→10→11), while LBO = HIGH selects interleaved burst (00→01→11→10). It must remain stable during operation - changing LBO mid-burst causes undefined address sequencing and potential data corruption.
What is the power consumption of the 71V3577S80BGGI8 in sleep mode?
In full sleep mode (ZZ = HIGH), the 71V3577S80BGGI8 draws just 30 µA typical supply current (IZZ) while maintaining full data retention - verified across the industrial temperature range. This enables ultra-low-power standby in battery-backed or energy-constrained systems without data loss.
Is the 71V3577S80BGGI8 pin-compatible with other devices in the 71V3577/79 family?
The 71V3577S80BGGI8 shares identical BGA-119 pinout and function mapping with other speed grades (e.g., 71V3577S75BGGI8) and the 71V3579S variants, but differs from the 71V3579 in BW3/BW4 functionality (present in 71V3577, not used in 71V3579). Always verify pin definitions in Table 2 of the Renesas datasheet for exact variant compatibility.
71V3577S80BGGI8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 119-BGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 4.5Mbit
- Memory Organization:
- 128K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 100 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 8 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 119-PBGA (14x22)
71V3577S80BGGI8 FAQ
1.How can I place an order for 71V3577S80BGGI8 through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V3577S80BGGI8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V3577S80BGGI8 reliable?
The price and inventory of 71V3577S80BGGI8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V3577S80BGGI8 is usually 5 days.
3.What payment methods are accepted for 71V3577S80BGGI8?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V3577S80BGGI8 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 71V3577S80BGGI8?
71V3577S80BGGI8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V3577S80BGGI8 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V3577S80BGGI8?
For technical support, including 71V3577S80BGGI8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V3577S80BGGI8 requirements.
6.How does Aetrix verify that 71V3577S80BGGI8 is sourced from the original manufacturer or authorized distributors?
All 71V3577S80BGGI8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V3577S80BGGI8 meets industry standards.
7.What is the process for return or replacement of 71V3577S80BGGI8?
All 71V3577S80BGGI8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V3577S80BGGI8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V3577S80BGGI8 part is unused and in its original packaging.
Return procedure for 71V3577S80BGGI8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V3577S80BGGI8 Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
-
AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
