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Renesas 71V3577S80BGI
- Part No.:
- 71V3577S80BGI
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 119-BGA
- Datasheet:
-
71V3577S80BGI.pdf
- Description:
- IC SRAM 4.5MBIT PAR 119PBGA
- Quantity:
- Payment:
- Shipping:
Inventory:4,403
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Product details
Overview
71V3577S80BGI from Renesas Electronics is a 128K × 36-bit (4.608 Mb), 3.3V synchronous SRAM with flow-through output architecture, 8.0 ns access time at 100 MHz, TQFP-100 package, and industrial temperature range (–40°C to +85°C). It supports linear/interleaved burst modes via LBO pin and features single-cycle deselect, self-timed write, and ZZ-controlled sleep mode - deployed in high-speed cache and networking buffer applications.
For engineers reviewing the 71V3577S80BGI datasheet, 71V3577S80BGI pinout, 71V3577S80BGI application, or 71V3577S80BGI equivalent, key selection criteria include burst counter behavior, flow-through vs. pipelined output timing, 3.3V I/O compatibility, TQFP-100 mechanical fit, and industrial-grade power-down current (IZZ = 30 µA).
Technical Context
This SRAM implements a synchronous interface with registered address/data inputs and unregistered (flow-through) outputs - eliminating output pipeline latency. Its internal burst counter advances on ADV=LOW and selects sequence order (linear or interleaved) via static LBO configuration.
Write operations support global (GW) or byte-level (BW1–BW4 + BWE) control, with CE/CS0/CS1 chip-select hierarchy and asynchronous OE/ZZ for output enable and deep-sleep entry. All synchronous inputs meet setup/hold timing relative to CLK rising edge.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 128K × 36-bit (4.608 Mbit); supports 256K × 18-bit mode via address mapping |
| Access Time / Max Frequency | 8.0 ns @ 100 MHz - guarantees deterministic read latency for real-time buffering |
| Supply Voltages | VDD = 3.3 V ±5% (core), VDDQ = 3.3 V ±5% (I/O) - enables direct interfacing with 3.3V logic families |
| Operating Temperature | –40°C to +85°C - qualified for industrial embedded systems without derating |
| Power Consumption | IDD = 180 mA (max @ 100 MHz), IZZ = 30 µA (full sleep) - supports low-idle-power system states |
| Burst Mode | 4-word burst with programmable linear/interleaved order via LBO pin - reduces bus arbitration overhead |
| Output Architecture | Flow-through (no output register) - eliminates 1-clock output delay vs. pipelined SRAMs |
Pinout & Package
Packaged in JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm body, 0.5 mm pitch. Pin 1 marked by corner notch; pins arranged in clockwise order starting top-left.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | Synchronous address latch triggered by ADSP/ADSC + CE; A0–A16 used for 128K×36 mode |
| CLK | Clock Input | Single-phase edge-triggered reference for all synchronous inputs and internal timing |
| CE, CS0, CS1 | Chip Enable / Selects | 3-input hierarchical enable: CE active-low gated with CS0 (high) and CS1 (low) |
| ADV | Burst Address Advance | Active-low signal that increments internal burst counter; HIGH suspends burst |
| LBO | Linear/Interleaved Burst Order | Static DC input: LOW = linear, HIGH = interleaved; must remain stable during operation |
| GW, BWE, BW1–BW4 | Write Control Inputs | GW enables full 36-bit write; BWE gates BWx; BW1–BW4 select 9-bit bytes (I/O0–7/I/OP1 etc.) |
| OE | Output Enable | Asynchronous active-low control of I/O drivers - enables tri-state during burst or partial reads |
| ZZ | Sleep Mode | Asynchronous active-high input that disables CLK internally and reduces ICC to 30 µA |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O | 36-bit bidirectional synchronous data path; flow-through outputs require no output register timing budget |
| VDD, VDDQ, VSS | Power/Ground | Dual-supply design: VDD powers core logic, VDDQ powers I/O buffers - allows separate noise isolation |
Key Features
| Feature | Design Value |
|---|---|
| Flow-through output architecture | Zero-cycle output latency - data appears on I/O pins within tCD after CLK rise, critical for tight-timing cache interfaces |
| Configurable burst order (LBO) | Hardware-selectable linear or interleaved 4-word burst sequences - matches CPU/cache controller addressing patterns |
| Single-cycle deselect | Chip deactivation completes within one clock cycle - enables rapid context switching between memory banks |
| Self-timed write cycle | Internal write completion detection eliminates external write-strobe timing constraints - simplifies controller design |
| Low-power sleep mode (ZZ) | Reduces supply current to 30 µA while retaining data - enables energy-efficient idle states in portable/networking gear |
| Industrial temperature qualification | Guaranteed operation from –40°C to +85°C - suitable for base stations, industrial PLCs, and transportation electronics |
Applications
| High-Speed Cache Buffer | Network Packet Buffer |
|---|---|
Use Scenario: L2/L3 cache line storage in RISC-based communication processors requiring sub-10ns read access. IC Role / Device Role / Timing Role: Primary synchronous SRAM providing burst-aligned 36-bit data to processor bus with flow-through output timing. Use Value: 8.0 ns tCD enables single-cycle data delivery at 100 MHz, eliminating pipeline stalls in cache refill paths. |
Use Scenario: Temporary storage of Ethernet/SONET frames in telecom line cards with strict jitter and latency budgets. IC Role / Device Role / Timing Role: Dual-port-capable buffer supporting concurrent ingress/egress burst transfers via ADV-controlled sequencing. Use Value: Single-cycle deselect and burst suspend (ADV HIGH) allow dynamic buffer partitioning without bus contention. |
| Industrial Motion Controller Memory | Avionics Data Acquisition Buffer |
Use Scenario: Real-time trajectory lookup table storage in servo drives operating in harsh factory environments. IC Role / Device Role / Timing Role: Deterministic-access memory holding position/velocity profiles accessed via burst reads synchronized to motion clock. Use Value: Industrial temp rating (–40°C to +85°C) and 30 µA sleep current support fanless, sealed enclosure designs. |
Use Scenario: High-reliability intermediate storage for sensor fusion data in flight control units before ARINC-429 transmission. IC Role / Device Role / Timing Role: Radiation-tolerant-qualified SRAM (per Renesas industrial process) buffering time-critical ADC samples. Use Value: Flow-through output and 8.0 ns access ensure timestamp alignment across multi-channel sampled data streams. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 71V3577S85BGI | 8.5 ns access time (max 87 MHz), identical pinout/package, same industrial temp range | Lower max frequency; higher timing margin for less aggressive clock trees | Select when system clock is ≤87 MHz and reduced power (IDD = 190 mA) is prioritized over peak bandwidth |
| 71V3579S80BGI | 256K × 18 organization (same density), shares 71V3577S pinout but repurposes BW3/BW4 as NC; identical AC/DC specs | Optimized for 18-bit data buses (e.g., legacy DSPs); requires PCB layout verification for BW3/BW4 NC handling | Choose for 18-bit bus architectures where byte-write granularity per 9-bit lane remains functionally equivalent |
Compared with 71V3577S80BGI, the 71V3577S85BGI trades 13 MHz bandwidth for relaxed timing closure and lower active current, while the 71V3579S80BGI maintains identical speed and power but reconfigures I/O width and byte-enable mapping for 18-bit systems - neither is pin-compatible without layout review due to NC pin reassignment and bus-width implications.
Availability
71V3577S80BGI is available at Aetrix Electronics and suitable for high-speed cache buffers, network packet buffers, and industrial motion controller memory requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for 71V3577S80BGI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and enterprise applications.
The 71V3577S/79S family targets high-performance embedded systems needing deterministic, low-latency SRAM - designed specifically for cache, buffering, and real-time control where flow-through timing and industrial reliability are mandatory.
FAQ
What is the maximum clock frequency supported by the 71V3577S80BGI?
The 71V3577S80BGI supports up to 100 MHz operation, corresponding to an 8.0 ns clock cycle time (tCYC). This is guaranteed across the full industrial temperature range (–40°C to +85°C) and 3.3 V ±5% supply conditions. The device achieves this using a synchronous interface with precise setup/hold timing requirements referenced to the CLK rising edge.
Does the 71V3577S80BGI support both linear and interleaved burst modes?
Yes, the 71V3577S80BGI supports both linear and interleaved burst sequences via the LBO (Linear Burst Order) pin. When LBO is driven LOW, the device executes linear burst ordering; when HIGH, it uses interleaved ordering. LBO is a static input and must remain stable during active operation to prevent burst sequence corruption.
What is the purpose of the ZZ pin on the 71V3577S80BGI?
On the 71V3577S80BGI, the ZZ pin is an asynchronous active-HIGH input that places the device into full sleep mode. When asserted, ZZ gates the internal clock and reduces supply current to 30 µA (typical) while maintaining data retention. This enables ultra-low-power idle states in battery-backed or thermally constrained systems without requiring full power cycling.
How does the flow-through output architecture of the 71V3577S80BGI differ from pipelined SRAMs?
The 71V3577S80BGI uses a flow-through output architecture - meaning data appears on the I/O pins within tCD (e.g., 8.0 ns) after the CLK rising edge, with no additional clock-cycle delay. Unlike pipelined SRAMs that insert an output register, this eliminates one clock of latency, making the 71V3577S80BGI ideal for applications demanding minimal read-to-data-valid timing, such as CPU cache interfaces.
Can the 71V3577S80BGI be used in a 256K × 18 configuration?
Yes, the 71V3577S80BGI is configurable as 256K × 18-bit (same 4.608 Mbit density) by remapping address lines - A17 becomes active, and byte-write enables BW3/BW4 are unused (NC). The pinout remains identical to the 128K × 36 mode, but system firmware must adjust address decoding and byte-lane routing accordingly to match the narrower data path.
71V3577S80BGI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 119-BGA
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 4.5Mbit
- Memory Organization:
- 128K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 100 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 8 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 119-PBGA (14x22)
71V3577S80BGI FAQ
1.How can I place an order for 71V3577S80BGI through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V3577S80BGI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V3577S80BGI reliable?
The price and inventory of 71V3577S80BGI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V3577S80BGI is usually 5 days.
3.What payment methods are accepted for 71V3577S80BGI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V3577S80BGI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 71V3577S80BGI?
71V3577S80BGI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V3577S80BGI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V3577S80BGI?
For technical support, including 71V3577S80BGI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V3577S80BGI requirements.
6.How does Aetrix verify that 71V3577S80BGI is sourced from the original manufacturer or authorized distributors?
All 71V3577S80BGI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V3577S80BGI meets industry standards.
7.What is the process for return or replacement of 71V3577S80BGI?
All 71V3577S80BGI units undergo pre-shipment inspection (PSI). If there is an issue with 71V3577S80BGI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V3577S80BGI part is unused and in its original packaging.
Return procedure for 71V3577S80BGI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V3577S80BGI Tags
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M24C02-WMN6TP
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AT24C02C-XHM-T
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AT21CS01-STUM10-T
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24LC01BT-I/OT
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M24C02-FMC6TG
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AT24CS02-SSHM-T
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93LC46BT-I/OT
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AT24C04C-SSHM-T
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24LC01BT-I/SN
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24AA02UIDT-I/OT
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AT24C08C-STUM-T
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