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Renesas 71V3577S80BGI8
- Part No.:
- 71V3577S80BGI8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 119-BGA
- Datasheet:
-
71V3577S80BGI8.pdf
- Description:
- IC SRAM 4.5MBIT PAR 119PBGA
- Quantity:
- Payment:
- Shipping:
Inventory:1,595
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Product details
Overview
71V3577S80BGI8 from Renesas Electronics is a 128K × 36-bit (4.608 Mb), 3.3V synchronous SRAM with flow-through outputs, burst counter, and single-cycle deselect. It supports 8.0 ns access time at up to 100 MHz clock frequency, operates across –40°C to +85°C industrial temperature range, and uses JEDEC-standard 100-pin TQFP packaging. It serves as high-bandwidth cache or buffer memory in network packet processors and telecom line cards.
For engineers reviewing the 71V3577S80BGI8 datasheet, 71V3577S80BGI8 pinout, 71V3577S80BGI8 application, or 71V3577S80BGI8 equivalent, key selection considerations include its 3.3V core/I/O supply, linear/interleaved burst mode via LBO input, self-timed write with byte-level granularity (BW1–BW4), and low-power sleep mode controlled by ZZ input.
Technical Context
The 71V3577S80BGI8 implements a synchronous, clock-driven architecture with registered address, control, and data inputs, but flow-through (unregistered) data outputs - enabling minimal read latency. Its internal burst address counter advances on ADV=LOW and supports four-word bursts with sequence determined by LBO pin state (linear or interleaved).
Write operations are fully synchronous and support multiple modes: global write (GW), byte write enable (BWE), and individual byte writes (BW1–BW4). Power management includes CMOS standby (ISB1), clock-running standby (ISB2), and full sleep mode (IZZ ≤ 35 µA) activated by high-Z ZZ input.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 128K × 36-bit (4.608 Mbit); also configurable as 256K × 18-bit in same package |
| Access Time / Max Frequency | 8.0 ns access time; supports up to 100 MHz clock frequency in industrial temperature range |
| Supply Voltages | VDD = 3.3 V ±5% (core); VDDQ = 3.3 V ±5% (I/O); separate power domains reduce noise coupling |
| Operating Temperature | –40°C to +85°C industrial grade; validated for sustained operation in embedded networking hardware |
| Power Consumption | 180 mA typical active current (8.0 ns speed); 35 mA standby (ISB1); 35 µA full sleep (IZZ) |
| Burst Mode Control | LBO pin selects linear or interleaved 4-word burst sequence; static configuration, no runtime change allowed |
| Write Architecture | Self-timed write with GW, BWE, and BW1–BW4 - enables per-byte write masking without external timing logic |
Pinout & Package
71V3577S80BGI8 is packaged in a JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm body, with 0.5 mm pitch. Pinout conforms to PKG100 footprint for 128K × 36 configuration.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | Synchronous address latching on rising CLK edge gated by ADSP/ADSC; A0–A16 used for 128K × 36 mode |
| CLK | Clock Input | Primary timing reference; all synchronous inputs referenced to rising edge; no internal PLL |
| CE, CS0, CS1 | Chip Enable / Selects | Three-level chip select hierarchy (CE active LOW, CS0 active HIGH, CS1 active LOW) for multi-chip memory expansion |
| ADV | Burst Address Advance | Active LOW signal that increments internal burst counter; HIGH suspends burst sequence |
| LBO | Linear/Interleaved Burst Order | Asynchronous static input; LOW = linear burst (00→01→10→11), HIGH = interleaved (00→01→11→10) |
| GW, BWE, BW1–BW4 | Write Controls | GW enables full 36-bit write; BWE gates BWx; BW1–BW4 each control one 9-bit byte (I/O0–7+I/OP1, etc.) |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O | 36-bit bidirectional bus; input path registered, output path flow-through - eliminates output register delay |
| ZZ | Sleep Mode Input | Asynchronous HIGH activates full sleep mode; internal CLK gating ensures immediate power reduction and data retention |
Key Features
| Feature | Design Value |
|---|---|
| Flow-through output architecture | Zero-cycle output register delay enables tCD = 8.0 ns read access - critical for deterministic latency in real-time packet buffering |
| Single-cycle deselect | Chip deactivation completes within one CLK cycle, eliminating bus contention during rapid command switching |
| Configurable burst order (LBO) | Hardware-selectable linear or interleaved addressing matches cache line layouts in MIPS/PowerPC-based systems |
| Byte-write granularity | Four independent 9-bit write enables (BW1–BW4) allow partial writes without read-modify-write overhead |
| Low-power sleep mode (ZZ) | IZZ ≤ 35 µA guarantees data retention while reducing system standby power - essential for fanless telecom chassis |
Applications
| Network Packet Buffer | Telecom Line Card Cache |
|---|---|
Use Scenario: Storing ingress/egress Ethernet frames in a Layer 2 switch ASIC with strict 100 ns latency budget. IC Role / Device Role / Timing Role: Primary frame buffer SRAM interfacing directly to MAC controller via synchronous burst reads/writes. Use Value: 8.0 ns tCD and flow-through outputs meet sub-100 ns round-trip timing; single-cycle deselect prevents pipeline stalls during buffer switching. | Use Scenario: Serving as instruction/data cache for a DSP-based TDM framer in an E1/T1 line interface module. IC Role / Device Role / Timing Role: High-speed cache memory supporting 100 MHz DSP bus with interleaved burst access pattern. Use Value: LBO-configurable interleaved burst matches DSP's natural address stride; industrial temp rating ensures reliability in uncooled chassis. |
| Industrial PLC Data Log | Radar Signal Processing Buffer |
Use Scenario: Capturing sensor timestamped events in a programmable logic controller operating in harsh factory environments. IC Role / Device Role / Timing Role: Nonvolatile-backed SRAM buffer holding pre-trigger event history before flash storage transfer. Use Value: –40°C to +85°C rating and ZZ sleep mode enable reliable long-term logging with <1 µA quiescent draw during idle periods. | Use Scenario: Temporary storage of digitized IF samples in a pulsed radar receiver prior to FFT processing. IC Role / Device Role / Timing Role: High-throughput circular buffer feeding FPGA-based signal chain with deterministic burst reads. Use Value: 128K × 36 organization provides 576 KB contiguous space; 100 MHz clock support aligns with ADC sampling rates up to 125 MSPS. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1371DV33-100BZXI | 128K × 36, 100 MHz, 3.3V, 100-pin TQFP - identical speed/temp/package; different burst control (MODE pin vs. LBO) | Requires MODE pin tie-off instead of LBO; no ZZ sleep - higher standby current (ISB1 = 60 mA) | Choose when existing layout uses Cypress-compatible burst control and sleep mode is not required. |
| AS7C3128B-10JIN | 128K × 36, 100 MHz, 3.3V, 100-pin TQFP - lacks burst counter, flow-through outputs, and ZZ sleep | No burst capability; only single-word random access; no low-power sleep mode | Choose only for cost-sensitive designs where burst performance and ultra-low sleep current are unnecessary. |
Compared with CY7C1371DV33-100BZXI and AS7C3128B-10JIN, the 71V3577S80BGI8 uniquely delivers integrated burst sequencing, true flow-through latency, and sub-µA sleep - making it optimal for latency-critical, power-constrained embedded systems requiring deterministic memory access.
Availability
71V3577S80BGI8 is available at Aetrix Electronics and suitable for network packet buffering, telecom line card caching, and industrial data logging requiring stable component supply and long-term industrial temperature support.
Supply support for 71V3577S80BGI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.
The 71V3577S family targets high-performance embedded systems needing deterministic, low-latency SRAM with advanced power management - particularly in networking, telecom, and real-time control applications.
FAQ
What memory organization does the 71V3577S80BGI8 support?
The 71V3577S80BGI8 is organized as 128K × 36 bits (4.608 Mbit) and can also operate in 256K × 18-bit mode using the same pinout and package. This dual-configuration flexibility allows system designers to optimize data bus width and density without changing PCB layout. The 71V3577S80BGI8 achieves this through internal address decoding that maps A0–A16 for 128K × 36 and A0–A17 for 256K × 18.
Does the 71V3577S80BGI8 support both linear and interleaved burst modes?
Yes, the 71V3577S80BGI8 supports both linear and interleaved burst sequences via the asynchronous LBO (Linear Burst Order) input pin. When LBO = LOW, the device executes linear burst (00→01→10→11); when LBO = HIGH, it executes interleaved burst (00→01→11→10). The 71V3577S80BGI8 requires LBO to remain static during operation - it must not toggle mid-burst.
What is the role of the ZZ pin on the 71V3577S80BGI8?
The ZZ pin on the 71V3577S80BGI8 is an asynchronous sleep mode input. When driven HIGH, it gates the internal clock and reduces supply current to ≤35 µA (IZZ) while maintaining full data retention. This feature enables ultra-low-power standby in battery-backed or energy-conscious systems. The 71V3577S80BGI8 exits sleep mode synchronously upon ZZ returning LOW and requires tZZR ≥ 100 ns recovery before valid accesses.
How does the 71V3577S80BGI8 handle byte-level writes?
The 71V3577S80BGI8 supports granular byte writes using four dedicated byte write enables: BW1 controls I/O0–I/O7 and I/OP1; BW2 controls I/O8–I/O15 and I/OP2; BW3 controls I/O16–I/O23 and I/OP3; BW4 controls I/O24–I/O31 and I/OP4. These are gated by BWE and require GW = HIGH. The 71V3577S80BGI8 allows any combination of BWx asserts in a single cycle - enabling partial 9-bit writes without read-modify-write overhead.
Is the 71V3577S80BGI8 compatible with commercial-grade variants like 71V3577S80BG?
No - the 71V3577S80BGI8 is specifically rated for industrial temperature (–40°C to +85°C), whereas the 71V3577S80BG is commercial grade (0°C to +70°C). They share identical speed (8.0 ns), package (100-pin TQFP), and pinout, but the 71V3577S80BGI8 undergoes extended temperature screening and has guaranteed ISB1/ISB2/IZZ parameters across the full industrial range. Substituting the commercial variant in industrial environments risks parametric failure.
71V3577S80BGI8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 119-BGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 4.5Mbit
- Memory Organization:
- 128K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 100 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 8 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 119-PBGA (14x22)
71V3577S80BGI8 FAQ
1.How can I place an order for 71V3577S80BGI8 through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V3577S80BGI8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V3577S80BGI8 reliable?
The price and inventory of 71V3577S80BGI8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V3577S80BGI8 is usually 5 days.
3.What payment methods are accepted for 71V3577S80BGI8?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V3577S80BGI8 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 71V3577S80BGI8?
71V3577S80BGI8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V3577S80BGI8 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V3577S80BGI8?
For technical support, including 71V3577S80BGI8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V3577S80BGI8 requirements.
6.How does Aetrix verify that 71V3577S80BGI8 is sourced from the original manufacturer or authorized distributors?
All 71V3577S80BGI8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V3577S80BGI8 meets industry standards.
7.What is the process for return or replacement of 71V3577S80BGI8?
All 71V3577S80BGI8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V3577S80BGI8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V3577S80BGI8 part is unused and in its original packaging.
Return procedure for 71V3577S80BGI8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V3577S80BGI8 Tags
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M24C02-WMN6TP
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