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Renesas 71V3577S80BQ
- Part No.:
- 71V3577S80BQ
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 165-TBGA
- Datasheet:
-
71V3577S80BQ.pdf
- Description:
- IC SRAM 4.5MBIT PAR 165CABGA
- Quantity:
- Payment:
- Shipping:
Inventory:1,960
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Product details
Overview
71V3577S80BQ from Renesas Electronics is a 128K × 36-bit (4.608 Mb), 3.3V synchronous SRAM with flow-through outputs, burst counter, and single-cycle deselect. It supports 8.0 ns access time at up to 100 MHz clock frequency, operates across industrial temperature range (–40°C to +85°C), and uses JEDEC-standard 100-pin TQFP packaging. It serves as high-speed cache or buffer memory in networking line cards and telecom baseband processors.
For engineers reviewing the 71V3577S80BQ datasheet, 71V3577S80BQ pinout, 71V3577S80BQ application, or 71V3577S80BQ equivalent, key selection criteria include burst mode support (linear/interleaved via LBO), 3.3V I/O compatibility, flow-through output architecture, ZZ-controlled sleep mode, and TQFP-100 mechanical fit for space-constrained PCBs.
Technical Context
The 71V3577S80BQ implements a synchronous, clock-driven interface with registered address and data inputs, but unregistered (flow-through) outputs - enabling minimal read latency after clock edge. Its internal burst address counter advances on ADV=LOW and supports four-word bursts with order determined by LBO pin state (linear or interleaved).
Write operations are fully self-timed and configurable: global write (GW), byte write enable (BWE), and individual byte writes (BW1–BW4) allow selective 9-bit word updates. Power management includes asynchronous ZZ input for full sleep mode (IZZ ≤ 35 µA) and synchronous chip deselect for standby (ISB1 ≤ 35 mA).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 128K × 36-bit (4.608 Mbit); supports 256K × 18-bit mode via address mapping |
| Access Time / Max Frequency | 8.0 ns access time; supports sustained 100 MHz operation in industrial temp range |
| Supply Voltages | VDD = 3.3 V ±5% (core); VDDQ = 3.3 V ±5% (I/O); separate power domains |
| Operating Temperature | –40°C to +85°C (industrial grade); validated for continuous operation in base station environments |
| Power Consumption | IDD = 180 mA typical at 100 MHz; IZZ = 30–35 µA in full sleep mode |
| Burst Mode Control | LBO pin selects linear or interleaved 4-word burst sequence; static configuration, no runtime change |
| Output Architecture | Flow-through (no output register); tCD = 8.0 ns max clock-to-data; tOHZ = 3.5 ns max enable-to-HiZ |
Pinout & Package
71V3577S80BQ is packaged in a JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm body, 0.5 mm pitch. Pinout conforms to PKG100 footprint with dedicated VDD/VDDQ/VSS rails, 18 address inputs (A0–A17), 36 data I/Os (I/O0–I/O31 + I/OP1–I/OP4), and 12 control inputs including ADV, ADSP, ADSC, BWE, GW, OE, CE, CS0, CS1, LBO, ZZ, and CLK.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | Synchronous address latching on rising CLK edge gated by ADSP/ADSC; supports 128K×36 or 256K×18 mapping |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O (36-bit) | Flow-through outputs; registered inputs; BW1–BW4 control 9-bit byte groups (e.g., BW1 → I/O0–I/O7 + I/OP1) |
| CLK | System Clock Input | Single-ended CMOS clock; all synchronous timing referenced to rising edge; no internal PLL |
| ADV | Burst Address Advance | Active-Low synchronous signal that increments internal burst counter; HIGH suspends burst |
| LBO | Burst Order Select | Asynchronous static input: LOW = linear burst (00→01→10→11), HIGH = interleaved burst (00→01→11→10) |
| ZZ | Sleep Mode Enable | Asynchronous HIGH activates full sleep mode; gates internal clock; retains data; IZZ ≤ 35 µA |
Key Features
| Feature | Design Value |
|---|---|
| Flow-through output architecture | Eliminates output register delay: tCD = 8.0 ns directly from CLK edge, critical for low-latency cache interfaces |
| Configurable burst addressing | LBO pin selects linear or interleaved 4-word burst order - matches CPU/cache controller expectations without firmware overhead |
| Multi-level write control | Simultaneous support for global (GW), byte-group (BWE + BW1–BW4), and single-byte write granularity - reduces bus contention and power spikes |
| Single-cycle deselect | Chip deactivation completes within one clock cycle (via CE/CS0/CS1), enabling rapid context switching in multi-SRAM systems |
| Industrial-grade power management | Three distinct low-power states: active (IDD), standby (ISB1), and full sleep (IZZ); all specified over –40°C to +85°C |
Applications
| Telecom Baseband Processing | Network Line Card Buffering |
|---|---|
Use Scenario: Real-time packet buffering and header processing in 10G/25G Ethernet line cards. IC Role / Device Role / Timing Role: High-bandwidth, low-latency SRAM buffer between SERDES PHY and packet classifier ASIC. Use Value: 100 MHz burst reads deliver 4×36-bit words per cycle (144-bit/10 ns), matching wire-speed ingress requirements without FIFO bottlenecks. | Use Scenario: Shared memory for multi-core traffic management engines in carrier-grade routers. IC Role / Device Role / Timing Role: Synchronous shared RAM accessed concurrently by dual ARM Cortex-A cores via AXI interconnect. Use Value: Flow-through outputs and single-cycle deselect minimize arbitration latency; 8.0 ns tCD enables sub-10 ns core-to-memory round-trip timing. |
| Industrial PLC Data Logging | Avionics Sensor Fusion Buffer |
Use Scenario: Cyclic acquisition and timestamped storage of analog I/O and fieldbus data in ruggedized PLCs. IC Role / Device Role / Timing Role: Deterministic-access scratchpad memory for real-time OS task stacks and cyclic data buffers. Use Value: Industrial temp rating (–40°C to +85°C) and ZZ sleep mode (35 µA) ensure reliable operation in uncooled enclosures with periodic wake-up logging. | Use Scenario: Temporal alignment buffer for multi-sensor inputs (IMU, GPS, barometer) in flight control units. IC Role / Device Role / Timing Role: Time-stamped, burst-capable memory staging raw sensor samples before Kalman filter execution. Use Value: Linear burst mode (LBO=LOW) provides predictable, cache-friendly sequential access pattern aligned with DMA engine burst transfers. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ISSI IS61WV12836BLL-8BLI | 128K × 36, 3.3V, 8 ns, 100-pin TQFP; no LBO or ADV pins; fixed linear burst only | Lacks configurable burst order and ADV-controlled burst suspension; simpler control interface | Choose when burst flexibility is unnecessary and cost sensitivity outweighs feature parity |
| Cypress CY7C1355BV18-8BGXI | 256K × 18, 3.3V, 8 ns, 119-ball BGA; supports interleaved burst only; no TQFP option | Different organization (256K×18 vs 128K×36); BGA-only packaging; no LBO pin (interleaved fixed) | Choose when board layout allows BGA and memory density > 4.6 Mbit is required; not drop-in replaceable |
Compared with IS61WV12836BLL-8BLI and CY7C1355BV18-8BGXI, the 71V3577S80BQ uniquely combines 128K×36 organization, TQFP-100 package, and hardware-selectable burst order - enabling direct integration into legacy designs requiring pin-compatible upgrade paths and deterministic burst behavior.
Availability
71V3577S80BQ is available at Aetrix Electronics and suitable for telecom infrastructure, industrial automation, and avionics applications requiring stable component supply, long-term lifecycle support, and industrial-temperature qualified memory.
Supply support for 71V3577S80BQ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and enterprise markets.
The 71V3577S series belongs to Renesas' high-speed synchronous SRAM product line, engineered for low-latency, burst-capable memory subsystems in network processors, baseband ICs, and real-time control systems.
FAQ
What is the maximum operating frequency supported by the 71V3577S80BQ?
The 71V3577S80BQ supports up to 100 MHz clock frequency with 8.0 ns access time, validated across the full industrial temperature range (–40°C to +85°C). This speed grade is available in both TQFP and BGA packages, unlike the faster 6.5 ns variant which is TQFP-only and commercial-temp limited.
Does the 71V3577S80BQ support both 128K x 36 and 256K x 18 memory configurations?
Yes, the 71V3577S80BQ is internally organized as 128K × 36 but supports 256K × 18 operation through address remapping - using A17 as MSB in 256K × 18 mode. Pinouts differ slightly between configurations (e.g., A17 used in 256K×18, NC in 128K×36), and the 71V3577S80BQ datasheet confirms both modes are supported in the same device.
How does the LBO pin affect burst behavior in the 71V3577S80BQ?
The LBO pin on the 71V3577S80BQ statically selects burst order: LOW enables linear burst (00→01→10→11), HIGH enables interleaved burst (00→01→11→10). It is asynchronous and must remain stable during operation; changing LBO mid-burst causes undefined behavior. The 71V3577S80BQ implements this via hardwired logic - no configuration register required.
What power-saving modes does the 71V3577S80BQ provide, and how are they controlled?
The 71V3577S80BQ offers three power states: active (IDD), standby (ISB1, chip deselected), and full sleep (IZZ, ZZ=HIGH). Standby draws ≤35 mA; sleep draws ≤35 µA and retains data. ZZ is asynchronous and overrides all clocks; CE/CS0/CS1 control synchronous deselect. All modes are specified across –40°C to +85°C for the 71V3577S80BQ.
Is the 71V3577S80BQ pin-compatible with other devices in the 71V3577/79 family?
The 71V3577S80BQ shares identical 100-pin TQFP pinout with other 71V3577S variants (e.g., 71V3577S75BQ, 71V3577S65BQ), differing only in speed grade and temperature screening. It is not pin-compatible with 71V3579S variants due to different address/data pin allocations (e.g., A17 usage, NC placements), as confirmed in Renesas' PKG100 pin configuration diagrams for each part number.
71V3577S80BQ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 165-TBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 4.5Mbit
- Memory Organization:
- 128K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 100 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 8 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-CABGA (13x15)
71V3577S80BQ FAQ
1.How can I place an order for 71V3577S80BQ through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V3577S80BQ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V3577S80BQ reliable?
The price and inventory of 71V3577S80BQ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V3577S80BQ is usually 5 days.
3.What payment methods are accepted for 71V3577S80BQ?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V3577S80BQ transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 71V3577S80BQ?
71V3577S80BQ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V3577S80BQ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V3577S80BQ?
For technical support, including 71V3577S80BQ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V3577S80BQ requirements.
6.How does Aetrix verify that 71V3577S80BQ is sourced from the original manufacturer or authorized distributors?
All 71V3577S80BQ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V3577S80BQ meets industry standards.
7.What is the process for return or replacement of 71V3577S80BQ?
All 71V3577S80BQ units undergo pre-shipment inspection (PSI). If there is an issue with 71V3577S80BQ, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V3577S80BQ part is unused and in its original packaging.
Return procedure for 71V3577S80BQ:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V3577S80BQ Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
Microchip Technology
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24AA02UIDT-I/OT
Microchip Technology
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AT24C08C-STUM-T
Microchip Technology
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