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Renesas 71V3577S80BQ8
- Part No.:
- 71V3577S80BQ8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 165-TBGA
- Datasheet:
-
71V3577S80BQ8.pdf
- Description:
- IC SRAM 4.5MBIT PAR 165CABGA
- Quantity:
- Payment:
- Shipping:
Inventory:3,073
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Product details
Overview
71V3577S80BQ8 from Renesas Electronics is a 128K × 36-bit (4.608 Mb), 3.3V synchronous SRAM with flow-through outputs, burst counter, and single-cycle deselect. It supports 8.0 ns access time at up to 100 MHz clock frequency in industrial temperature range (–40°C to +85°C), packaged in 100-pin TQFP. Used in high-bandwidth cache and buffer applications requiring deterministic timing and low-latency burst reads.
For engineers reviewing the 71V3577S80BQ8 datasheet, 71V3577S80BQ8 pinout, 71V3577S80BQ8 application, or 71V3577S80BQ8 equivalent, key selection criteria include burst mode configuration (LBO), flow-through output latency, synchronous write control via GW/BWE/BWx, and industrial-grade power-down (ZZ) support - all critical for real-time embedded memory subsystems.
Technical Context
The 71V3577S80BQ8 implements a synchronous, clock-driven architecture with registered address, control, and data inputs, but unregistered (flow-through) data outputs - enabling zero-cycle output delay after clock edge. Its internal 2-bit binary burst counter generates sequential addresses for four-word bursts based on LBO input state (linear vs. interleaved).
Write operations are fully self-timed and configurable: global writes (GW), byte-selectable writes (BW1–BW4), and byte-write enable (BWE) allow precise 9-bit granularity control. Chip enable (CE), dual chip selects (CS0/CS1), and asynchronous OE/ZZ provide flexible bus arbitration and power management in multi-SRAM systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 128K × 36-bit (4.608 Mb); supports 256K × 18-bit mode via pin strapping |
| Access Time / Max Frequency | 8.0 ns @ 100 MHz (industrial temp); enables deterministic read latency in high-speed bus interfaces |
| Supply Voltages | VDD = 3.3 V ±5% (core); VDDQ = 3.3 V ±5% (I/O); separate supplies reduce noise coupling |
| Burst Mode Control | LBO pin selects linear or interleaved 4-word burst sequence; static configuration, no runtime change |
| Power-Down Current | IZZ = 30 µA max (industrial); full sleep mode activated by ZZ = HIGH, retains data |
| Output Architecture | Flow-through (no output register); tCD = 8.0 ns max; eliminates pipeline delay for timing-critical reads |
| Write Granularity | Four independent 9-bit byte lanes (BW1–BW4); enables partial-word updates without read-modify-write |
Pinout & Package
Packaged in JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body, 0.5 mm pitch. Pinout validated per Renesas 71V3577S_79S datasheet (Rev. 6.42, Sep 2023), PKG100 configuration for 128K × 36 mode.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | Synchronous 18-bit address bus; A0–A16 used for 128K × 36 (17-bit row/column decode) |
| CLK | Clock Input | Primary timing reference; all synchronous inputs sampled on rising edge |
| GW, BWE, BW1–BW4 | Write Control Inputs | Global write (GW), byte-write enable (BWE), and four 9-bit byte selects - enable fine-grained write masking |
| ADV, ADSP, ADSC | Burst Address Control | ADV advances internal burst counter; ADSP/ADSC load initial address from processor/cache controller |
| LBO | Burst Order Select | Asynchronous static input; LOW = linear burst, HIGH = interleaved burst (per IEEE 1596) |
| ZZ | Asynchronous Sleep Enable | HIGH disables internal clock and reduces current to 30 µA; retains memory contents |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O | 36-bit bidirectional data bus with 4 parity bits; flow-through outputs eliminate output register delay |
| OE | Asynchronous Output Enable | LOW enables drivers; HIGH places I/O pins in high-impedance - supports shared bus contention control |
Key Features
| Feature | Design Value |
|---|---|
| Flow-through output architecture | Eliminates output register delay: tCD = 8.0 ns matches clock-to-data spec, enabling cycle-accurate timing in FPGA/ASIC interfaces |
| Configurable 4-word burst mode | LBO pin selects linear or interleaved addressing - directly supports Pentium-style or Alpha-style cache line fills without external logic |
| Single-cycle deselect | Chip deactivation completes within one CLK cycle; prevents bus contention during rapid bank switching in multi-SRAM systems |
| Independent core/I/O supplies (VDD/VDDQ) | Reduces switching noise coupling between logic and I/O domains; improves signal integrity in mixed-signal SoC backplanes |
| Industrial temperature operation | Rated –40°C to +85°C with guaranteed 8.0 ns access; suitable for base station, industrial PLC, and avionics data buffers |
Applications
| High-Speed Cache Buffer | Network Packet Buffer |
|---|---|
Use Scenario: L2/L3 cache buffer between CPU and memory controller in telecom baseband processors. IC Role / Device Role / Timing Role: Synchronous SRAM providing deterministic 8.0 ns read latency and 4-word burst delivery to match processor prefetch width. Use Value: Flow-through outputs eliminate output register delay, aligning data arrival precisely with clock edge - critical for meeting setup/hold margins in 100 MHz bus interfaces. | Use Scenario: Temporary storage for variable-length Ethernet/SONET frames in network switch ASICs. IC Role / Device Role / Timing Role: Burst-capable SRAM buffering ingress/egress packet headers and payloads with byte-selectable writes. Use Value: Four independent BWx signals enable concurrent write to multiple 9-bit lanes - accelerating frame assembly without read-modify-write overhead. |
| Real-Time DSP Data Buffer | Industrial Motion Controller Memory |
Use Scenario: Dual-port-like data exchange between DSP core and DMA engine in motor control FPGAs. IC Role / Device Role / Timing Role: Synchronous SRAM acting as ping-pong buffer with ADV-controlled burst reads synchronized to DMA request clocks. Use Value: ADV input allows dynamic burst suspension/resumption - enabling precise alignment of data transfers with servo loop timing deadlines. | Use Scenario: Nonvolatile parameter storage and real-time I/O mapping in CNC machine controllers operating in factory environments. IC Role / Device Role / Timing Role: Industrial-grade SRAM retaining configuration data and motion trajectory points across thermal cycles. Use Value: ZZ sleep mode draws only 30 µA while preserving data - extends uptime during standby without battery backup. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1371BV33-100AXC | 128K × 36, 3.3V, 100 MHz, 100-pin TQFP; flow-through outputs; no LBO pin - fixed linear burst only | Lacks interleaved burst mode; requires external logic for cache line reordering in certain architectures | Select when LBO flexibility is unnecessary and Cypress-compatible footprint is required |
| AS7C3128P-10TIN | 128K × 32, 3.3V, 100 MHz, 100-pin TQFP; pipelined (not flow-through) outputs; tCD = 9.5 ns | 4-bit narrower data bus; 1.5 ns longer output latency; no ZZ sleep mode - higher active/standby current | Select when 32-bit bus width suffices and lower cost outweighs flow-through timing advantage |
Compared with CY7C1371BV33-100AXC and AS7C3128P-10TIN, the 71V3577S80BQ8 uniquely delivers configurable burst order (LBO), true flow-through timing (8.0 ns tCD), and ultra-low sleep current (30 µA), making it optimal for latency-sensitive industrial and telecom buffer designs where burst flexibility and power efficiency are jointly critical.
Availability
71V3577S80BQ8 is available at Aetrix Electronics and suitable for high-reliability networking equipment, industrial motion controllers, and real-time DSP subsystems requiring stable component supply, long-term lifecycle support, and guaranteed industrial temperature performance.
Supply support for 71V3577S80BQ8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and enterprise applications.
The 71V3577S product line targets high-performance embedded memory subsystems requiring deterministic timing, burst capability, and industrial-grade reliability - specifically designed for cache, buffer, and FIFO applications in telecom infrastructure and real-time control systems.
FAQ
What is the maximum operating frequency of the 71V3577S80BQ8?
The 71V3577S80BQ8 supports up to 100 MHz clock frequency with 8.0 ns access time, validated across the industrial temperature range (–40°C to +85°C). This speed grade is available in the 100-pin TQFP package and is not offered in BGA variants for this speed bin.
Does the 71V3577S80BQ8 support both 128K × 36 and 256K × 18 configurations?
Yes, the 71V3577S80BQ8 is configurable as either 128K × 36 or 256K × 18 via pin strapping and address decoding. The 128K × 36 mode uses A0–A16 for addressing; the 256K × 18 mode uses A0–A17 and reassigns BW3/BW4 as NC, as documented in the Renesas 71V3577S_79S datasheet.
How does the LBO pin affect burst behavior in the 71V3577S80BQ8?
The LBO pin selects burst order: LOW enables linear burst (00→01→10→11), HIGH enables interleaved burst (00→01→11→10). It is an asynchronous static input - must remain stable during operation. The 71V3577S80BQ8 implements IEEE 1596-compliant interleaved addressing when LBO = HIGH.
What is the power consumption of the 71V3577S80BQ8 in sleep mode?
In full sleep mode (ZZ = HIGH), the 71V3577S80BQ8 draws ≤30 µA at VDD = 3.465 V and TA = +85°C, while guaranteeing data retention. This ultra-low IZZ enables extended standby in battery-backed or energy-constrained industrial systems without external retention circuitry.
Can the 71V3577S80BQ8 perform byte-selectable writes without using the global write (GW) signal?
Yes. When BWE = LOW and GW = HIGH, the 71V3577S80BQ8 enables individual byte writes via BW1–BW4. Each BWx controls a 9-bit lane (e.g., BW1 → I/O0–I/O7 + I/OP1). All outputs are disabled during byte writes - ensuring clean bus isolation without external transceivers.
71V3577S80BQ8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 165-TBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 4.5Mbit
- Memory Organization:
- 128K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 100 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 8 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-CABGA (13x15)
71V3577S80BQ8 FAQ
1.How can I place an order for 71V3577S80BQ8 through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V3577S80BQ8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V3577S80BQ8 reliable?
The price and inventory of 71V3577S80BQ8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V3577S80BQ8 is usually 5 days.
3.What payment methods are accepted for 71V3577S80BQ8?
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71V3577S80BQ8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V3577S80BQ8 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V3577S80BQ8?
For technical support, including 71V3577S80BQ8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V3577S80BQ8 requirements.
6.How does Aetrix verify that 71V3577S80BQ8 is sourced from the original manufacturer or authorized distributors?
All 71V3577S80BQ8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V3577S80BQ8 meets industry standards.
7.What is the process for return or replacement of 71V3577S80BQ8?
All 71V3577S80BQ8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V3577S80BQ8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V3577S80BQ8 part is unused and in its original packaging.
Return procedure for 71V3577S80BQ8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V3577S80BQ8 Tags
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M24C02-WMN6TP
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AT24C02C-XHM-T
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