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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Renesas 71V3577S80BQI

Name: 71V3577S80BQI
Brand: Renesas
SKU: 71V3577S80BQI
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 71V3577S80BQI

Manufacturer:: Renesas

Category:: Memory

Package:: 165-TBGA

Datasheet:: 71V3577S80BQI.pdf

Description:: IC SRAM 4.5MBIT PAR 165CABGA

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Product details

Overview

71V3577S80BQI from Renesas Electronics is a 128K × 36-bit (4.608 Mb), 3.3V synchronous SRAM with flow-through output architecture, 8.0 ns access time at 100 MHz clock frequency, and industrial temperature range (–40°C to +85°C). It supports linear/interleaved burst modes via LBO pin, single-cycle deselect, and self-timed write using GW/BWE/BWx controls - deployed in high-speed cache and packet buffering subsystems.

For engineers reviewing the 71V3577S80BQI datasheet, 71V3577S80BQI pinout, 71V3577S80BQI application, or 71V3577S80BQI equivalent, key selection criteria include TQFP-100 package compatibility, 3.3V I/O voltage tolerance, burst counter timing behavior, ZZ-controlled sleep mode current (30–35 µA), and flow-through read latency versus registered-output alternatives.

Technical Context

This SRAM implements a synchronous interface with dual chip-select logic (CS0/CS1), address status inputs (ADSP/ADSC) for processor/cache coordination, and ADV-driven burst address sequencing. The internal burst counter advances on rising CLK when ADV = LOW, delivering four consecutive data words per initial address.

Its flow-through output path eliminates output register delay, enabling tCD = 8.0 ns (clock-to-data) in 8 ns speed grade, while input registers capture address/data on rising CLK. Power management includes asynchronous ZZ sleep mode (IZZ ≤ 35 µA) and synchronous standby (ISB1 ≤ 35 µA), with VDD/VDDQ decoupling required per JEDEC layout guidelines.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Organization	128K × 36-bit (4.608 Mbit); also configurable as 256K × 18-bit via pin strapping
Access Time / Max Clock	8.0 ns access time at 100 MHz clock frequency (industrial temp range)
Supply Voltages	VDD = 3.3 V ±5% (core), VDDQ = 3.3 V ±5% (I/O); separate power domains
Operating Temperature	–40°C to +85°C (industrial grade); validated across full voltage and timing margins
Power Consumption	IDD = 180 mA (active, 100 MHz), ISB1 = 35 mA (standby), IZZ = 35 µA (sleep mode)
Burst Mode Control	LBO pin selects linear vs. interleaved burst sequence; static configuration, no runtime change
Output Architecture	Flow-through (no output register); tCD = 8.0 ns, tOHZ = 3.5 ns, tOLZ = 0 ns

Pinout & Package

71V3577S80BQI is packaged in a JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm body, with exposed thermal pad (PKG100). Pinout conforms to Renesas' 71V3577S family layout for 128K × 36 configuration.

Pin/Terminal	Circuit Role	Design Meaning
A0–A17	Address Inputs	Synchronous address latch triggered by ADSP/ADSC + CE; A0–A16 used for 128K × 36 mode
CLK	System Clock Input	Rising-edge-triggered timing reference for all synchronous operations; no internal PLL
GW, BWE, BW1–BW4	Write Control Inputs	Global write (GW) overrides byte enables; BW1–BW4 control 9-bit I/O groups (I/O0–7/I/OP1, etc.)
ADV, ADSP, ADSC	Burst & Address Status	ADV advances burst counter; ADSP (processor) and ADSC (cache) load address register independently
LBO, ZZ	Mode Configuration	LBO = LOW → linear burst; ZZ = HIGH → full sleep (clock gated, IZZ ≤ 35 µA)
I/O0–I/O31, I/OP1–I/OP4	Data I/O	36-bit bidirectional bus; flow-through outputs; registered inputs; VDDQ-referenced I/O voltage
CE, CS0, CS1	Chip Enable Logic	Three-input decode: CE = LOW, CS0 = HIGH, CS1 = LOW enables device (JEDEC-compliant)

Key Features

Feature	Design Value
Flow-through output architecture	Eliminates output register delay: tCD = 8.0 ns matches clock-to-data spec without added latency
Configurable burst order (LBO)	Hardware-selectable linear or interleaved 4-word burst sequences - no firmware overhead
Single-cycle deselect capability	Device enters high-Z state within one clock cycle after chip disable, reducing bus contention
Self-timed write with multiple enable levels	GW enables full 36-bit writes; BWE + BWx allow granular 9-bit byte writes without external logic
Industrial-grade sleep mode (ZZ)	Asynchronous ZZ input reduces supply current to ≤35 µA while retaining full data retention

Applications

Network Packet Buffering	Real-Time DSP Cache
Use Scenario: Line-rate packet buffering in Ethernet switch ASICs handling 10 Gbps+ traffic with bursty ingress/egress patterns. IC Role / Device Role / Timing Role: High-bandwidth, low-latency SRAM buffer between MAC and switching fabric; provides deterministic 8.0 ns read response under burst load. Use Value: Flow-through output ensures zero-cycle output registration delay, enabling direct connection to high-speed SerDes PHYs without timing closure penalties.	Use Scenario: On-chip instruction/data cache for fixed-point DSP cores executing real-time motor control algorithms with tight loop timing. IC Role / Device Role / Timing Role: Synchronous SRAM serving as L1/L2 cache with burst-mode prefetch; LBO-configured linear addressing matches sequential instruction fetch. Use Value: 100 MHz operation sustains 400 MB/s sustained bandwidth (36-bit × 100 MHz), meeting real-time jitter budgets for 20 kHz PWM update rates.
Industrial PLC Memory Expansion	Avionics Data Acquisition Buffer
Use Scenario: Memory expansion for programmable logic controllers requiring deterministic I/O scan cycles and extended operating temperature support. IC Role / Device Role / Timing Role: External SRAM mapped into CPU address space; industrial temp rating (–40°C to +85°C) ensures reliability in uncontrolled cabinet environments. Use Value: ZZ sleep mode reduces idle power to <35 µA, enabling battery-backed operation during brownout conditions without data loss.	Use Scenario: High-integrity sensor data capture in flight control systems where EMI resilience and data retention under transient power loss are critical. IC Role / Device Role / Timing Role: Buffered acquisition memory for ADC streams; single-cycle deselect prevents bus glitches during fault isolation events. Use Value: Separate VDD/VDDQ rails isolate core logic noise from analog-sensing I/O, meeting DO-254 radiated emissions requirements.

Network Packet Buffering

Real-Time DSP Cache

Use Scenario: Line-rate packet buffering in Ethernet switch ASICs handling 10 Gbps+ traffic with bursty ingress/egress patterns.

IC Role / Device Role / Timing Role: High-bandwidth, low-latency SRAM buffer between MAC and switching fabric; provides deterministic 8.0 ns read response under burst load.

Use Value: Flow-through output ensures zero-cycle output registration delay, enabling direct connection to high-speed SerDes PHYs without timing closure penalties.

Use Scenario: On-chip instruction/data cache for fixed-point DSP cores executing real-time motor control algorithms with tight loop timing.

IC Role / Device Role / Timing Role: Synchronous SRAM serving as L1/L2 cache with burst-mode prefetch; LBO-configured linear addressing matches sequential instruction fetch.

Use Value: 100 MHz operation sustains 400 MB/s sustained bandwidth (36-bit × 100 MHz), meeting real-time jitter budgets for 20 kHz PWM update rates.

Industrial PLC Memory Expansion

Avionics Data Acquisition Buffer

Use Scenario: Memory expansion for programmable logic controllers requiring deterministic I/O scan cycles and extended operating temperature support.

IC Role / Device Role / Timing Role: External SRAM mapped into CPU address space; industrial temp rating (–40°C to +85°C) ensures reliability in uncontrolled cabinet environments.

Use Value: ZZ sleep mode reduces idle power to <35 µA, enabling battery-backed operation during brownout conditions without data loss.

Use Scenario: High-integrity sensor data capture in flight control systems where EMI resilience and data retention under transient power loss are critical.

IC Role / Device Role / Timing Role: Buffered acquisition memory for ADC streams; single-cycle deselect prevents bus glitches during fault isolation events.

Use Value: Separate VDD/VDDQ rails isolate core logic noise from analog-sensing I/O, meeting DO-254 radiated emissions requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
71V3577S75BQI	7.5 ns access time (117 MHz max), commercial/industrial temp; same pinout and feature set	Higher bandwidth requirement (e.g., 100G MAC interfaces), less timing margin for PCB trace skew	Select when system clock >100 MHz and industrial temp support is retained
AS7C3256B-10JIN	128K × 32-bit (4 Mbit), 10 ns access, 3.3V, 100-pin TQFP; no burst counter or ADV/ADSC inputs	Legacy designs requiring pin-compatible replacement without burst or cache-coherency features	Choose only if burst mode and flow-through latency are not required; verify address/data bus width alignment

Compared with 71V3577S80BQI, the 71V3577S75BQI delivers higher throughput at tighter timing margins, while the AS7C3256B-10JIN offers simpler control logic but lacks burst acceleration and cache-aware interface signals - making it suitable only for non-burst, non-cache applications.

Availability

71V3577S80BQI is available at Aetrix Electronics and suitable for network packet buffering, real-time DSP cache, and industrial PLC memory expansion requiring stable component supply across extended temperature and long product lifecycles.

Supply support for 71V3577S80BQI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The 71V3577S family targets high-performance embedded systems requiring deterministic, low-latency memory with cache-coherent interface signals - designed specifically for networking, telecom, and real-time control applications.

FAQ

What is the maximum clock frequency supported by the 71V3577S80BQI at industrial temperature?

The 71V3577S80BQI supports up to 100 MHz clock frequency with 8.0 ns access time across the full industrial temperature range (–40°C to +85°C). This is validated per Renesas AC Electrical Characteristics Table 16, where tCYC = 10.0 ns minimum applies for industrial-grade operation. The 6.5 ns speed grade is restricted to commercial temperature and TQFP package only.

Does the 71V3577S80BQI support both 128K × 36 and 256K × 18 configurations on the same device?

Yes, the 71V3577S80BQI is factory-configured for 128K × 36 organization, but its pinout and internal logic support 256K × 18 mode via address pin remapping (A17 used instead of A16). The 71V3579S variant is dedicated to 256K × 18; however, the 71V3577S80BQI's functional block diagram and pin configuration diagrams confirm dual-mode capability through A16/A17 routing.

How does the LBO pin affect burst addressing behavior in the 71V3577S80BQI?

In the 71V3577S80BQI, LBO = LOW selects linear burst order (00→01→10→11), while LBO = HIGH selects interleaved order (00→01→11→10). This static configuration determines how A0/A1 advance during four-word bursts and must remain stable during operation. The burst sequence wraps on completion, and LBO has no effect outside burst mode.

What is the power-down current of the 71V3577S80BQI in ZZ sleep mode?

The 71V3577S80BQI draws ≤35 µA in full sleep mode (IZZ) when ZZ = HIGH, per DC Electrical Characteristics Table 09a for industrial temperature. This current level guarantees full data retention and is measured at VDD = 3.465 V max, confirming ultra-low-power operation suitable for battery-backed systems.

Can the 71V3577S80BQI be used with a 2.5V I/O interface?

No, the 71V3577S80BQI requires VDDQ = 3.3 V ±5% for I/O operation and is not 2.5V-tolerant. VIH for I/O pins is specified as ≥2.0 V and ≤VDDQ + 0.3 V, and VOH/ VOL are characterized only at 3.3V I/O supply. Interfacing with 2.5V logic requires level translation per Renesas Application Note AN-xxx.

71V3577S80BQI Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: 165-TBGA

Packaging:: Tray

Product Status:: Obsolete

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: SRAM

Technology:: SRAM - Synchronous, SDR

Memory Size:: 4.5Mbit

Memory Organization:: 128K x 36

Memory Interface:: Parallel

Clock Frequency:: 100 MHz

Write Cycle Time - Word, Page:: -

Access Time:: 8 ns

Voltage - Supply:: 3.135V ~ 3.465V

Operating Temperature:: -40°C ~ 85°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 165-CABGA (13x15)

71V3577S80BQI FAQ

1.How can I place an order for 71V3577S80BQI through Aetrix?

Please submit a Request for Quotation (RFQ) for 71V3577S80BQI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 71V3577S80BQI reliable?

The price and inventory of 71V3577S80BQI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V3577S80BQI is usually 5 days.

3.What payment methods are accepted for 71V3577S80BQI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V3577S80BQI transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 71V3577S80BQI?

71V3577S80BQI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 71V3577S80BQI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 71V3577S80BQI?

For technical support, including 71V3577S80BQI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V3577S80BQI requirements.

6.How does Aetrix verify that 71V3577S80BQI is sourced from the original manufacturer or authorized distributors?

All 71V3577S80BQI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V3577S80BQI meets industry standards.

7.What is the process for return or replacement of 71V3577S80BQI?

All 71V3577S80BQI units undergo pre-shipment inspection (PSI). If there is an issue with 71V3577S80BQI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 71V3577S80BQI part is unused and in its original packaging.

Return procedure for 71V3577S80BQI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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