Renesas 71V3577S80BQI8

Overview

71V3577S80BQI8 from Renesas Electronics is a 128K × 36-bit (4.608 Mb) synchronous SRAM with 3.3V core and I/O supply, flow-through output architecture, and burst counter logic. It supports 8.0 ns access time at up to 100 MHz clock frequency in industrial temperature range (–40°C to +85°C), and is packaged in a 100-pin TQFP. It serves as high-speed buffer memory in network packet processors and cache-coherent subsystems.

For engineers reviewing the 71V3577S80BQI8 datasheet, 71V3577S80BQI8 pinout, 71V3577S80BQI8 application, or 71V3577S80BQI8 equivalent, key selection criteria include burst mode support (linear/interleaved via LBO), single-cycle deselect capability, self-timed write with byte- or global-write control, and industrial-grade power-down (ZZ) and standby current specs.

Technical Context

This device implements a synchronous, clock-driven interface with registered address and data inputs, but unregistered (flow-through) outputs - enabling minimal read latency. Its internal burst counter advances on ADV=LOW and generates four consecutive addresses based on A0/A1 and LBO state, supporting both linear and interleaved sequences.

Write operations are fully synchronous and configurable: global write (GW) enables full 36-bit writes, while BWE + BW1–BW4 allow independent 9-bit byte writes. Chip enable (CE), dual chip selects (CS0/CS1), and asynchronous OE and ZZ provide flexible system-level control and low-power sleep entry without clock gating dependency.

Key Specifications

Pinout & Package

Packaged in JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body, 0.5 mm pitch. Pinout validated per Renesas 71V3577S_79S datasheet Rev. 6.42 (Sep 2023), Figure 02a (128K×36 configuration).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with 71V3577S80BQI8, the 71V3579S80BQI8 offers identical speed and power but targets 18-bit buses, while CY7C1372D-100BAXI trades burst intelligence for broader second-source availability and reduced control pin count - impacting system-level timing predictability and firmware complexity.

Availability

71V3577S80BQI8 is available at Aetrix Electronics and suitable for network infrastructure, industrial automation, and medical imaging applications requiring stable component supply, long-term lifecycle assurance, and industrial-temperature performance.

Supply support for 71V3577S80BQI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The 71V3577S/79S product line delivers high-speed synchronous SRAMs optimized for cache-coherent subsystems and real-time packet processing - emphasizing deterministic timing, low-power sleep modes, and robust industrial operation.

FAQ

What memory organization does the 71V3577S80BQI8 support?

The 71V3577S80BQI8 is organized as 128K × 36 bits (4.608 Mbit). It shares pin compatibility and timing with the 256K × 18-bit 71V3579S variant, but its internal array and pin mapping (e.g., BW3/BW4 presence) are fixed for the 128K×36 configuration. This organization supports 36-bit-wide data paths common in network processors and DSPs.

Does the 71V3577S80BQI8 support both linear and interleaved burst modes?

Yes, the 71V3577S80BQI8 supports both burst modes via the LBO (Linear Burst Order) pin. When LBO = LOW, it executes linear burst sequencing; when LBO = HIGH, it uses interleaved sequencing. The burst counter advances on ADV = LOW and always delivers four consecutive words per burst - a hardware feature confirmed in the functional block diagram and timing tables of the official datasheet.

What is the role of the ZZ pin on the 71V3577S80BQI8?

The ZZ pin on the 71V3577S80BQI8 is an asynchronous high-active sleep mode input. When asserted (HIGH), it internally gates the CLK signal and reduces supply current to 30 µA (IZZ) while guaranteeing full data retention. Unlike standby modes, ZZ requires no prior deselection and resumes operation within tZZR (100 ns) after deassertion - making it ideal for rapid power-gating in burst-oriented systems.

How does the flow-through output architecture benefit timing-critical designs using the 71V3577S80BQI8?

The flow-through output architecture of the 71V3577S80BQI8 eliminates output register delay, delivering valid data tCD (8.0 ns max) after the rising CLK edge. This deterministic, zero-cycle-output-register latency enables tight integration with pipelined controllers - especially valuable in network packet processors where read-to-use timing must be sub-10 ns to sustain 10 Gbps line rates without wait states.

Is the 71V3577S80BQI8 qualified for industrial temperature operation?

Yes, the 71V3577S80BQI8 is explicitly rated for industrial temperature operation from –40°C to +85°C. All AC/DC specifications - including 8.0 ns access time, 100 MHz max frequency, ISB1 standby current (30 mA), and IZZ sleep current (30 µA) - are guaranteed across this range per Renesas datasheet Rev. 6.42. It is not qualified for extended or automotive grades beyond this specification.