Renesas 71V3577S80PFG

Overview

71V3577S80PFG from Renesas Electronics is a 128K × 36-bit (4.608 Mb), 3.3V synchronous SRAM with flow-through output architecture, 8.0 ns access time at 100 MHz clock frequency, and JEDEC-standard 100-pin TQFP package. It supports linear/interleaved burst modes via LBO input, single-cycle deselect, and low-power sleep mode via ZZ input - deployed in high-speed cache buffers and network packet memory subsystems.

For engineers reviewing the 71V3577S80PFG datasheet, 71V3577S80PFG pinout, 71V3577S80PFG application, or 71V3577S80PFG equivalent, key selection criteria include burst-mode timing compliance, 3.3V I/O voltage tolerance, flow-through vs. pipelined output latency, industrial temperature support (–40°C to +85°C), and compatibility with synchronous bus controllers using ADSP/ADSC address status signaling.

Technical Context

The 71V3577S80PFG implements a synchronous, register-controlled interface with separate address latching via ADSP/ADSC inputs and burst address generation via ADV-triggered binary counter. Its flow-through output path eliminates output register delay, delivering data on the same clock edge as address setup - critical for zero-latency read cycles in cache coherency protocols.

It supports four-byte-wide write operations via global (GW) or byte-selectable (BW1–BW4) controls, with asynchronous OE and ZZ pins enabling immediate output disable and full power-down. The LBO pin statically configures burst order (linear or interleaved), and internal logic ensures self-timed write completion without external wait-state generation.

Key Specifications

Pinout & Package

71V3577S80PFG is packaged in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body size, with 0.5 mm pitch and exposed thermal pad (not electrically connected). Pin 1 marked by dot; pin numbering follows standard counter-clockwise convention from top-left corner.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with AS7C3256A-10JIN and IS61WV102432BLL-10MLQ, the 71V3577S80PFG delivers lower read latency (8.0 ns vs. ≥10 ns), hardware-configurable burst order, and true flow-through output - making it uniquely suited for cache and real-time buffer applications demanding sub-10 ns deterministic access.

Availability

71V3577S80PFG is available at Aetrix Electronics and suitable for network packet buffering, processor cache interfaces, industrial motion control, and automotive radar signal processing requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for 71V3577S80PFG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The 71V3577S family targets high-performance embedded systems requiring deterministic, low-latency memory access - designed specifically for cache buffers, network switching, and real-time control where flow-through timing and burst flexibility are critical.

FAQ

What is the maximum operating frequency of the 71V3577S80PFG?

The 71V3577S80PFG supports up to 100 MHz clock frequency with 8.0 ns access time, validated across the industrial temperature range (–40°C to +85°C). This speed grade is guaranteed in the 100-pin TQFP package and applies to both 128K × 36 and 256K × 18 configurations. The 6.5 ns / 133 MHz variant is commercial-only and not applicable to the 71V3577S80PFG.

Does the 71V3577S80PFG support both linear and interleaved burst modes?

Yes, the 71V3577S80PFG supports both burst modes via the LBO (Linear Burst Order) pin: LBO = LOW selects linear burst, LBO = HIGH selects interleaved burst. This configuration is static - LBO must remain stable during device operation. The internal burst counter advances on each rising CLK edge when ADV is asserted, generating four consecutive addresses per burst sequence.

How does the flow-through output architecture of the 71V3577S80PFG affect system timing?

The flow-through output architecture of the 71V3577S80PFG eliminates output register delay, delivering valid data on the same clock cycle as address setup - reducing read latency by one clock cycle versus pipelined SRAMs. This enables zero-cycle-read operation in cache controllers and real-time buffers, where tCD (clock-to-data) ≤ 8.0 ns directly determines minimum system clock period.

What power-saving features does the 71V3577S80PFG offer?

The 71V3577S80PFG offers three power-saving states: standby (ISB2 = 80 mA at 100 MHz), deselected (ISB1 = 30 mA), and full sleep mode (IZZ ≤ 35 µA) activated by asserting ZZ HIGH. Sleep mode retains data while minimizing current draw - essential for battery-backed or thermally constrained applications like industrial gateways and automotive ECUs.

Is the 71V3577S80PFG pin-compatible with other devices in the 71V3577/79 family?

The 71V3577S80PFG shares identical pinout and package (100-pin TQFP) with other speed grades in the 71V3577S series (e.g., 71V3577S75PFG, 71V3577S65PFG), but is not pin-compatible with the 71V3579S variants due to differing address pin counts (A17 used in 256K×18 mode) and BW3/BW4 pin assignments. Always verify memory organization and pin function tables before substitution.