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Renesas 71V3577S80PFGI
- Part No.:
- 71V3577S80PFGI
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 100-LQFP
- Datasheet:
-
71V3577S80PFGI.pdf
- Description:
- IC SRAM 4.5MBIT PARALLEL 100TQFP
- Quantity:
- Payment:
- Shipping:
Inventory:4,817
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Product details
Overview
71V3577S80PFGI from Renesas Electronics is a 128K × 36-bit (4.608 Mb) synchronous SRAM with 3.3V core and I/O supply, flow-through output architecture, and burst counter logic. It supports 8.0 ns access time at up to 100 MHz clock frequency in industrial temperature range (–40°C to +85°C), features linear/interleaved burst mode via LBO pin, and uses JEDEC-standard 100-pin TQFP package. It is used in high-bandwidth cache buffers and network packet memory subsystems.
For engineers reviewing the 71V3577S80PFGI datasheet, 71V3577S80PFGI pinout, 71V3577S80PFGI application, or 71V3577S80PFGI equivalent, key selection criteria include burst-mode timing compliance, flow-through vs. registered output path, single-cycle deselect capability, ZZ-controlled sleep mode current (≤35 mA), and TQFP thermal/mechanical compatibility with legacy PCB layouts.
Technical Context
This SRAM implements a synchronous, clock-driven interface with dual chip-select logic (CS0/CS1), address status inputs (ADSP/ADSC), and burst address advance (ADV) control. Its internal architecture separates registered input paths (address, data, control) from unregistered (flow-through) output paths - enabling deterministic tCD timing without output register latency.
The device supports four-word burst sequences with programmable order (linear or interleaved) via static LBO pin, self-timed write cycles using GW/BWE/BWx hierarchy, and power-down via asynchronous ZZ input. All synchronous inputs meet setup/hold requirements relative to CLK rising edge, and the 100-pin TQFP package provides dedicated VDDQ/VDD/VSS rails for noise isolation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 128K × 36-bit (4.608 Mbit); supports 256K × 18-bit via address mapping reconfiguration |
| Access Time / Max Frequency | 8.0 ns / 100 MHz - guaranteed across industrial temperature (–40°C to +85°C) |
| Supply Voltages | VDD = 3.3 V ±5% (core), VDDQ = 3.3 V ±5% (I/O); separate rails reduce switching noise coupling |
| Output Architecture | Flow-through (no output register); enables immediate data availability after tCD delay from CLK edge |
| Power-Down Current | IZZ ≤ 35 µA in full sleep mode (ZZ = HIGH); retains data with minimal leakage |
| Burst Control | LBO pin selects linear or interleaved 4-word burst sequence; static configuration, no runtime change allowed |
| Package | JEDEC-standard 100-pin TQFP (14 mm × 20 mm); compatible with standard SMT reflow profiles |
Pinout & Package
71V3577S80PFGI is packaged in a 100-pin thin quad flatpack (TQFP), JEDEC MO-147AC, 14 mm × 20 mm body, 0.5 mm pitch. Pin 1 marked by corner notch; top-side marking includes "71V3577S80PFGI" and date code.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | Synchronous address latching on rising CLK edge when ADSP/ADSC active; A0–A16 used for 128K×36 mode |
| CLK | System Clock Input | Primary timing reference; all synchronous operations referenced to rising edge; no internal PLL |
| CE, CS0, CS1 | Chip Enable / Select Inputs | Three-level decode: CE LOW + CS0 HIGH + CS1 LOW enables device; supports multi-chip addressing |
| GW, BWE, BW1–BW4 | Write Control Inputs | GW overrides byte enables; BWE gates BWx; BW1–BW4 each control one 9-bit byte (I/O0–7+I/OP1, etc.) |
| ADV | Burst Address Advance | LOW initiates/continues burst; HIGH suspends counter - enables partial-burst termination |
| LBO | Burst Order Selection | Asynchronous static input: LOW = linear burst (00→01→10→11), HIGH = interleaved (00→01→11→10) |
| OE | Output Enable | Asynchronous; LOW enables flow-through outputs; HIGH forces high-Z regardless of clock state |
| ZZ | Sleep Mode Input | Asynchronous HIGH disables internal clock and reduces ICC to ≤35 µA; data retention guaranteed |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O Pins | 36-bit bidirectional bus; input path registered, output path flow-through; VDDQ-referenced I/O |
| VDD, VDDQ, VSS | Power/Ground Terminals | Dedicated core (VDD) and I/O (VDDQ) supplies; multiple VSS pins distributed for low-inductance return paths |
Key Features
| Feature | Design Value |
|---|---|
| Flow-through output architecture | Eliminates output register delay - tCD = 8.0 ns directly from CLK edge, critical for tight-timing cache interfaces |
| Single-cycle deselect | Device enters high-Z output state within one clock cycle after CE/CS deassertion - prevents bus contention |
| Configurable burst order (LBO) | Hardware-selectable linear or interleaved 4-word burst sequences - matches processor/cache controller expectations |
| Self-timed write cycle | GW/BWE/BWx hierarchy allows flexible write granularity (full 36-bit or per-byte) without external timing control |
| Industrial temperature support | Rated for –40°C to +85°C operation with full AC/DC specs - suitable for telecom infrastructure and industrial controllers |
| Low-power sleep mode (ZZ) | Reduces ICC to ≤35 µA while retaining memory contents - enables energy-efficient idle states in portable/network systems |
Applications
| High-Speed Cache Buffer | Network Packet Memory |
|---|---|
|
Use Scenario: L2/L3 cache buffer between CPU and DRAM in telecom baseband processors. IC Role / Device Role / Timing Role: Stores burst-aligned instruction/data blocks; delivers four consecutive 36-bit words per address with <8.0 ns tCD. Use Value: Flow-through outputs eliminate pipeline stalls; single-cycle deselect prevents bus turnaround delays during context switches. |
Use Scenario: Temporary storage for variable-length Ethernet/IP packets in switch fabric ASICs. IC Role / Device Role / Timing Role: Acts as packet descriptor and payload scratchpad; uses burst writes to ingest header + payload segments. Use Value: Byte-write enables (BW1–BW4) allow partial writes without read-modify-write; ZZ sleep cuts standby power between packet bursts. |
| Real-Time Signal Processing Buffer | Industrial PLC Data Exchange |
|
Use Scenario: Frame buffer for radar DSP subsystems requiring deterministic latency and burst-aligned FFT input. IC Role / Device Role / Timing Role: Holds incoming ADC sample streams; linear burst mode matches sequential memory access patterns. Use Value: 100 MHz clock support enables ≥400 MB/s sustained throughput; industrial temp rating ensures reliability in harsh enclosures. |
Use Scenario: Shared memory for multi-axis motion control in programmable logic controllers. IC Role / Device Role / Timing Role: Provides synchronized I/O mapping space between CPU and fieldbus interface ICs. Use Value: Dual chip-select (CS0/CS1) enables banked memory expansion; CE/ADSP/ADSC support cache-coherent bus protocols. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1371BV33-100AXC | 128K × 32-bit, 100 MHz, 100-pin TQFP; no LBO pin; fixed interleaved burst only | Lacks linear burst mode and separate VDDQ rail; lower I/O count (32-bit vs. 36-bit) | Choose when 32-bit bus width suffices and burst order flexibility is unnecessary. |
| AS7C3256B-10JIN | 256K × 32-bit, 100 MHz, 100-pin TQFP; asynchronous OE; no ADV/LBO/GW controls | No burst counter or flow-through optimization; simpler interface but higher latency per word | Prefer for cost-sensitive designs where burst performance and low-latency reads are not required. |
Compared with CY7C1371BV33-100AXC and AS7C3256B-10JIN, the 71V3577S80PFGI uniquely delivers 36-bit width, configurable burst order, and true flow-through timing - making it optimal for cache and packet-processing subsystems demanding deterministic sub-10 ns read latency.
Availability
71V3577S80PFGI is available at Aetrix Electronics and suitable for high-speed cache buffers, network packet memory, real-time signal processing buffers, and industrial PLC data exchange requiring stable component supply across extended temperature ranges.
Supply support for 71V3577S80PFGI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.
The 71V3577S series belongs to Renesas' high-performance synchronous SRAM product line, designed specifically for low-latency, burst-oriented memory subsystems in networking, test equipment, and real-time control applications.
FAQ
What is the maximum operating frequency of the 71V3577S80PFGI?
The 71V3577S80PFGI supports up to 100 MHz clock frequency with 8.0 ns access time, fully characterized over the industrial temperature range (–40°C to +85°C). This speed grade is validated for the 100-pin TQFP package and applies to both 128K × 36 and 256K × 18 configurations.
Does the 71V3577S80PFGI support linear burst mode?
Yes, the 71V3577S80PFGI supports linear burst mode when the LBO pin is held LOW. In this mode, the internal burst counter increments A0/A1 sequentially (00→01→10→11). The alternative interleaved mode (LBO = HIGH) follows 00→01→11→10 ordering - both are hardware-configured and static during operation.
How does the flow-through output architecture benefit system timing in the 71V3577S80PFGI?
The 71V3577S80PFGI's flow-through output path eliminates output register latency, delivering valid data within 8.0 ns after the CLK rising edge (tCD). This avoids pipeline insertion delays common in registered-output SRAMs, enabling tighter timing closure in high-frequency cache and packet buffer interfaces.
What is the power consumption of the 71V3577S80PFGI in sleep mode?
In full sleep mode (ZZ = HIGH), the 71V3577S80PFGI draws ≤35 µA supply current while retaining all stored data. This ultra-low IZZ enables energy-efficient idle states in battery-backed or thermally constrained systems without compromising data integrity.
Can the 71V3577S80PFGI be used in both 128K × 36 and 256K × 18 configurations?
Yes, the 71V3577S80PFGI is factory-configured for 128K × 36 organization but supports 256K × 18 via external address remapping (e.g., A17 used as MSB). Pin compatibility and timing specs remain identical across both modes, allowing flexible memory width adaptation in board design.
71V3577S80PFGI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 100-LQFP
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 4.5Mbit
- Memory Organization:
- 128K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 100 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 8 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 100-TQFP (14x14)
71V3577S80PFGI FAQ
1.How can I place an order for 71V3577S80PFGI through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V3577S80PFGI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V3577S80PFGI reliable?
The price and inventory of 71V3577S80PFGI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V3577S80PFGI is usually 5 days.
3.What payment methods are accepted for 71V3577S80PFGI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V3577S80PFGI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 71V3577S80PFGI?
71V3577S80PFGI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V3577S80PFGI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V3577S80PFGI?
For technical support, including 71V3577S80PFGI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V3577S80PFGI requirements.
6.How does Aetrix verify that 71V3577S80PFGI is sourced from the original manufacturer or authorized distributors?
All 71V3577S80PFGI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V3577S80PFGI meets industry standards.
7.What is the process for return or replacement of 71V3577S80PFGI?
All 71V3577S80PFGI units undergo pre-shipment inspection (PSI). If there is an issue with 71V3577S80PFGI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V3577S80PFGI part is unused and in its original packaging.
Return procedure for 71V3577S80PFGI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V3577S80PFGI Tags
-
M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
Microchip Technology
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24AA02UIDT-I/OT
Microchip Technology
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AT24C08C-STUM-T
Microchip Technology
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