Renesas 71V3577S80PFGI8

Overview

71V3577S80PFGI8 from Renesas Electronics is a 128K × 36-bit (4.608 Mb), 3.3V synchronous SRAM with flow-through output architecture, 8.0 ns access time at 100 MHz, industrial temperature range (–40°C to +85°C), and JEDEC-standard 100-pin TQFP package. It supports linear/interleaved burst modes via LBO input and features single-cycle deselect for high-speed cache and buffer applications in networking and telecom systems.

For engineers reviewing the 71V3577S80PFGI8 datasheet, 71V3577S80PFGI8 pinout, 71V3577S80PFGI8 application, or 71V3577S80PFGI8 equivalent, key selection criteria include burst-mode timing compliance, ZZ-controlled sleep current (≤35 mA), flow-through read latency, byte-write granularity (BW1–BW4), and TQFP-100 thermal/mechanical compatibility with legacy PCB layouts.

Technical Context

The 71V3577S80PFGI8 implements a synchronous, clock-driven interface with registered address/data inputs and unregistered (flow-through) outputs - eliminating output register delay to achieve deterministic tCD = 8.0 ns. Its internal burst counter advances on ADV = LOW and selects sequence order via static LBO pin, supporting both linear and interleaved addressing for CPU/cache coherency.

Write control uses hierarchical enable logic: GW enables full 36-bit writes, while BWE gates individual BW1–BW4 signals controlling four 9-bit byte lanes. Power management includes asynchronous ZZ sleep mode (IZZ ≤ 35 mA) and synchronous standby (ISB1 ≤ 35 mA), with VDD/VDDQ decoupling required per JEDEC TQFP layout guidelines.

Key Specifications

Pinout & Package

71V3577S80PFGI8 is packaged in a JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm body, 0.5 mm pitch. Pinout conforms to PKG100 configuration for 128K × 36 organization.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with IS61WV102432BLL-10TLI and CY7C1356BV33-100AXI, the 71V3577S80PFGI8 uniquely combines industrial-temp 8.0 ns access, hardware-configurable burst order, and sub-35 mA sleep current - making it optimal for thermally constrained, burst-intensive telecom and embedded control designs.

Availability

71V3577S80PFGI8 is available at Aetrix Electronics and suitable for high-speed packet buffering, cache memory for RISC processors, and telecom line card buffers requiring stable component supply across industrial temperature grades and long production lifecycles.

Supply support for 71V3577S80PFGI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The 71V3577S product line delivers high-speed synchronous SRAMs optimized for burst-intensive, low-latency applications in networking equipment, base stations, and real-time control systems.

FAQ

What is the maximum operating frequency supported by the 71V3577S80PFGI8?

The 71V3577S80PFGI8 supports up to 100 MHz clock frequency with an 8.0 ns access time, validated across the industrial temperature range (–40°C to +85°C). This speed grade is specified for the 100-pin TQFP package and applies to both 128K × 36 and 256K × 18 configurations. The 71V3577S80PFGI8 achieves this performance using a flow-through output architecture that eliminates output register delay.

Does the 71V3577S80PFGI8 support both linear and interleaved burst modes?

Yes, the 71V3577S80PFGI8 supports both linear and interleaved burst modes via the LBO (Linear Burst Order) pin. When LBO = LOW, the device executes linear burst addressing; when LBO = HIGH, it uses interleaved addressing. This selection is static and must remain stable during operation. The burst counter advances on ADV = LOW and delivers four consecutive 36-bit words per initiated address.

What is the function of the ZZ pin on the 71V3577S80PFGI8?

The ZZ pin on the 71V3577S80PFGI8 is an asynchronous sleep mode input. When driven HIGH, it gates the internal clock and reduces supply current to ≤35 mA (IZZ) while maintaining full data retention. No command sequence or timing constraints are required to enter or exit sleep mode. The pin has an internal pull-down, so it defaults to active mode if left unconnected.

How many byte-write enable signals does the 71V3577S80PFGI8 provide?

The 71V3577S80PFGI8 provides four individual byte-write enable signals - BW1, BW2, BW3, and BW4 - each controlling a 9-bit segment of the 36-bit data bus. BW1 manages I/O0–I/O7 and I/OP1; BW2 controls I/O8–I/O15 and I/OP2; and so on. These operate under control of the synchronous BWE signal, allowing precise partial writes without read-modify-write cycles.

Is the 71V3577S80PFGI8 compatible with commercial-grade PCB footprints?

Yes, the 71V3577S80PFGI8 uses a JEDEC-standard 100-pin TQFP package (PKG100) with 0.5 mm pitch and 14 mm × 20 mm body dimensions, fully compatible with industry-standard commercial and industrial PCB footprints. Its pinout matches Renesas' documented PKG100 layout for 128K × 36 configuration, including dedicated VDD, VDDQ, and VSS rails distributed across the perimeter for optimal decoupling.