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Renesas 71V3577S85BG8
- Part No.:
- 71V3577S85BG8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 119-BGA
- Datasheet:
-
71V3577S85BG8.pdf
- Description:
- IC SRAM 4.5MBIT PAR 119PBGA
- Quantity:
- Payment:
- Shipping:
Inventory:3,041
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Product details
Overview
71V3577S85BG8 from Renesas Electronics is a 128K × 36-bit (4.608 Mb), 3.3V synchronous SRAM with flow-through outputs, burst counter, and single-cycle deselect. It supports 8.5 ns access time at up to 87 MHz clock frequency, operates across industrial temperature range (–40°C to +85°C), and uses JEDEC-standard 119-ball BGA (BG119) packaging. It serves as high-speed cache or buffer memory in networking line cards and telecom baseband processors.
For engineers reviewing the 71V3577S85BG8 datasheet, 71V3577S85BG8 pinout, 71V3577S85BG8 application, or 71V3577S85BG8 equivalent, key selection criteria include burst mode flexibility (linear/interleaved via LBO), low-latency flow-through read path, self-timed write with byte- or global-write control, and industrial-grade power-down (ZZ) and standby current specs.
Technical Context
The 71V3577S85BG8 implements a synchronous, clock-driven architecture with registered address, control, and data inputs, but unregistered (flow-through) data outputs - enabling minimal read latency. Its internal 2-bit binary burst counter generates four sequential addresses per ADV assertion, with order determined by the static LBO input.
Burst operation is initiated by ADSP/ADSC-driven address latching followed by ADV=LOW; subsequent reads deliver data on consecutive CLK rising edges without reissuing address. Write cycles support global (GW) or individual byte (BW1–BW4) enable, gated by BWE, and are self-timed to eliminate external wait-state logic.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 128K × 36-bit (4.608 Mbit); also configurable as 256K × 18-bit in same device family |
| Access Time / Max Clock | 8.5 ns / 87 MHz - guarantees deterministic read latency for real-time packet buffering |
| Supply Voltages | VDD = 3.3 V ±5% (core); VDDQ = 3.3 V ±5% (I/O) - enables direct interfacing with 3.3V logic without level shifters |
| Operating Temperature | –40°C to +85°C - qualified for industrial and telecom infrastructure environments |
| Power Consumption | ISB1 = 35 mA (standby, deselected); IZZ = 35 mA (full sleep, ZZ active) - supports low-power system states |
| Burst Mode Control | LBO pin selects linear or interleaved 4-word burst sequence - critical for cache line alignment in processor interfaces |
| Output Architecture | Flow-through (no output register) - eliminates one clock cycle of read latency vs. pipelined SRAMs |
Pinout & Package
71V3577S85BG8 is packaged in a JEDEC-standard 119-ball fine-pitch BGA (BG119, 12 mm × 12 mm, 0.8 mm pitch), optimized for high-density routing and thermal performance in telecom and networking PCBs.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A16 | Address Inputs | 17-bit address bus for 128K-depth addressing; synchronous, latched on ADSP/ADSC edge |
| CLK | System Clock Input | Single-phase clock reference for all synchronous operations; no internal PLL or divider |
| ADSP / ADSC | Address Status Inputs | Processor- or cache-controller-initiated address capture; ADSP gated by CE, ADSC independent |
| ADV | Burst Address Advance | Active-low signal that increments internal burst counter; HIGH suspends burst sequence |
| LBO | Burst Order Select | Static input selecting linear (LBO=LOW) or interleaved (LBO=HIGH) 4-word burst address sequence |
| GW / BWE / BW1–BW4 | Write Control Inputs | Global write (GW), byte-write enable (BWE), and four 9-bit byte masks - enable flexible partial writes without read-modify-write |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O | 36-bit bidirectional data bus with parity bits; flow-through output path ensures tCD ≤ 8.5 ns |
| ZZ | Sleep Mode Input | Asynchronous high-active signal disabling internal clock and reducing ICC to 35 µA - retains data during deep sleep |
Key Features
| Feature | Design Value |
|---|---|
| Flow-through output architecture | Eliminates output register delay, delivering first valid data within 8.5 ns of CLK rise - essential for zero-wait-state CPU interfaces |
| Configurable burst order (LBO) | Hardware-selectable linear or interleaved 4-word burst sequences align with x86 or PowerPC cache line formats |
| Single-cycle deselect | Chip deactivation completes within one clock cycle - prevents bus contention during rapid context switches |
| Self-timed write cycle | Internal timing logic resolves write completion without external WAIT signal - simplifies controller design |
| Industrial temperature support | Guaranteed operation from –40°C to +85°C with full AC/DC specs - suitable for outdoor base stations and industrial PLCs |
Applications
| Telecom Line Card Buffering | Network Processor Cache |
|---|---|
Use Scenario: High-speed packet buffering between SERDES PHY and packet classifier ASIC on 10G/25G line cards. IC Role / Device Role / Timing Role: Synchronous SRAM providing low-latency, burst-access scratchpad memory for ingress/egress queues. Use Value: 8.5 ns tCD and flow-through outputs enable sub-10 ns read turnaround, supporting 87 MHz sustained throughput without pipeline stalls. | Use Scenario: L1/L2 cache tag/data storage for multi-core network processors handling IPv4/IPv6 forwarding at line rate. IC Role / Device Role / Timing Role: Burst-capable SRAM interfacing directly to processor's synchronous bus with ADSP/ADV handshake protocol. Use Value: Linear burst mode (LBO=LOW) matches 4-word cache line fetch pattern, reducing address bus cycles by 75% per cache line read. |
| Baseband Digital Front-End | Industrial Motion Controller Buffer |
Use Scenario: Real-time sample buffering in LTE/5G baseband units where FFT/IFFT engines require aligned 36-bit word streams. IC Role / Device Role / Timing Role: Memory co-processor providing burst-aligned data to DSP cores via synchronous parallel interface. Use Value: Interleaved burst (LBO=HIGH) delivers memory-mapped coefficients in optimal order for radix-4 FFT engines, improving compute efficiency. | Use Scenario: Deterministic I/O mapping buffer in CNC motion controllers requiring jitter-free position update cycles. IC Role / Device Role / Timing Role: Industrial-grade SRAM holding servo loop parameters and encoder feedback history with guaranteed timing over temperature. Use Value: –40°C to +85°C operation with stable 8.5 ns access ensures consistent loop timing across factory ambient variations. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1371DV33-85BGXI | 128K × 36, 3.3V, 85 MHz max, 119-ball BGA - identical speed grade and package, but Cypress (now Infineon) implementation with different burst control (MODE pin vs. LBO) | Requires MODE pin configuration instead of LBO; lacks ADSC input - less flexible for cache-coherent systems with dual address sources | Preferred when migrating legacy Cypress designs; verify burst timing and address status compatibility before drop-in use |
| AS7C33128P-85BIN | 128K × 36, 3.3V, 85 MHz, 100-pin TQFP - same density/speed but different package (TQFP vs. BGA) and no LBO pin (fixed linear burst only) | No LBO means fixed linear burst order; TQFP limits board density and thermal performance vs. BGA | Consider only for cost-sensitive, lower-density designs where BGA assembly is unavailable or thermal load is minimal |
Compared with CY7C1371DV33-85BGXI and AS7C33128P-85BIN, the 71V3577S85BG8 uniquely combines industrial temperature support, hardware-selectable burst order (LBO), and ADSP/ADSC dual-address-source capability - making it optimal for telecom and embedded control systems requiring configurability and reliability.
Availability
71V3577S85BG8 is available at Aetrix Electronics and suitable for telecom infrastructure, network processor subsystems, and industrial motion control applications requiring stable component supply, long-term lifecycle support, and guaranteed industrial temperature performance.
Supply support for 71V3577S85BG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.
The 71V3577S product line delivers high-speed synchronous SRAMs optimized for burst-oriented, low-latency applications in networking, baseband, and real-time control systems - emphasizing deterministic timing, industrial reliability, and flexible interface protocols.
FAQ
What is the maximum operating frequency supported by the 71V3577S85BG8?
The 71V3577S85BG8 supports up to 87 MHz clock frequency, corresponding to an 8.5 ns access time (tCD). This speed grade is validated across the full industrial temperature range (–40°C to +85°C) and applies to both 128K × 36 and 256K × 18 configurations. The 6.5 ns / 133 MHz variant is restricted to TQFP packaging and commercial temperature only.
Does the 71V3577S85BG8 support both linear and interleaved burst modes?
Yes, the 71V3577S85BG8 supports both burst modes via the LBO (Linear Burst Order) pin. When LBO = LOW, the device executes linear burst sequencing (00→01→10→11); when LBO = HIGH, it uses interleaved sequencing (00→01→11→10). This selection is static and must remain stable during operation - changing LBO mid-burst may cause undefined address generation.
What is the function of the ADSP and ADSC pins on the 71V3577S85BG8?
The ADSP (Address Status from Processor) and ADSC (Address Status from Cache Controller) pins are synchronous, active-low inputs that trigger latching of the address bus into the internal address register. ADSP is gated by CE, while ADSC operates independently - enabling dual-source address initiation for cache-coherent or multi-master systems. Both must meet setup/hold timing relative to CLK.
How does the 71V3577S85BG8 handle power-down and data retention?
The 71V3577S85BG8 enters ultra-low-power sleep mode when ZZ is driven HIGH, reducing supply current to 35 µA (IZZ) while retaining stored data. Data retention is guaranteed across the full industrial temperature range. Upon exit, the device requires tZZR = 100 ns recovery time before accepting new commands, and must be deselected during wake-up.
Is the 71V3577S85BG8 pin-compatible with other devices in the 71V3577/79 family?
The 71V3577S85BG8 shares the BG119 ballout with other 71V3577S variants (e.g., 71V3577S75BG8), but is not pin-compatible with 71V3579S variants due to differing address pin counts (A0–A16 vs. A0–A17) and BW3/BW4 functionality. Pin mappings for 128K×36 and 256K×18 configurations differ in BG119 - refer to Renesas drawing 6450 drw 02c for exact ball assignments.
71V3577S85BG8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 119-BGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 4.5Mbit
- Memory Organization:
- 128K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 87 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 8.5 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 119-PBGA (14x22)
71V3577S85BG8 FAQ
1.How can I place an order for 71V3577S85BG8 through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V3577S85BG8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V3577S85BG8 reliable?
The price and inventory of 71V3577S85BG8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V3577S85BG8 is usually 5 days.
3.What payment methods are accepted for 71V3577S85BG8?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V3577S85BG8 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 71V3577S85BG8?
71V3577S85BG8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V3577S85BG8 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V3577S85BG8?
For technical support, including 71V3577S85BG8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V3577S85BG8 requirements.
6.How does Aetrix verify that 71V3577S85BG8 is sourced from the original manufacturer or authorized distributors?
All 71V3577S85BG8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V3577S85BG8 meets industry standards.
7.What is the process for return or replacement of 71V3577S85BG8?
All 71V3577S85BG8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V3577S85BG8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V3577S85BG8 part is unused and in its original packaging.
Return procedure for 71V3577S85BG8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V3577S85BG8 Tags
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M24C02-WMN6TP
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AT24C02C-XHM-T
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AT21CS01-STUM10-T
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24LC01BT-I/OT
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M24C02-FMC6TG
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AT24CS02-SSHM-T
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93LC46BT-I/OT
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AT24C04C-SSHM-T
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