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Renesas 71V3577S85BGG
- Part No.:
- 71V3577S85BGG
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 119-BGA
- Datasheet:
-
71V3577S85BGG.pdf
- Description:
- IC SRAM 4.5MBIT PAR 119PBGA
- Quantity:
- Payment:
- Shipping:
Inventory:3,623
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Product details
Overview
71V3577S85BGG from Renesas Electronics is a 128K × 36-bit (4.608 Mbit), 3.3V synchronous SRAM with flow-through output architecture, 8.5 ns access time at up to 87 MHz, and burst counter support for high-bandwidth memory subsystems in networking and telecom line cards.
For engineers reviewing the 71V3577S85BGG datasheet, 71V3577S85BGG pinout, 71V3577S85BGG application, or 71V3577S85BGG equivalent, key selection criteria include TQFP-100 package compatibility, linear/interleaved burst mode control via LBO, single-cycle deselect capability, and industrial temperature support (–40°C to +85°C) at 8.5 ns timing.
Technical Context
This device implements a synchronous, clock-driven interface with registered address and data inputs, flow-through (unregistered) outputs, and a self-timed write cycle controlled by GW, BWE, and BW1–BW4. The internal burst address counter advances on ADV=LOW and supports four-word bursts with order determined by LBO state.
It features dual chip-select logic (CS0 active-HIGH, CS1 active-LOW), asynchronous OE and ZZ controls, and separate VDD (3.3 V core) and VDDQ (3.3 V I/O) supplies. Power-down current is 30 mA in full sleep mode (ZZ HIGH) and 180–190 mA during active operation at 8.5 ns speed grade.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 128K × 36-bit (4.608 Mbit); supports 256K × 18-bit via address mapping |
| Access Time / Max Frequency | 8.5 ns / 87 MHz - guaranteed for commercial and industrial temp ranges in TQFP-100 |
| Supply Voltages | VDD = 3.3 V ±5% (core), VDDQ = 3.3 V ±5% (I/O) - decoupled rails enable noise isolation |
| Burst Mode Control | LBO input selects linear or interleaved burst sequence - static configuration, must not change during operation |
| Power-Down Current | 30 mA (IZZ) in full sleep mode (ZZ HIGH) - enables low-power standby in always-on systems |
| Operating Temperature | –40°C to +85°C (industrial grade) - validated for base station and industrial control environments |
| Output Architecture | Flow-through (no output register) - eliminates output clock-to-data skew, critical for timing-critical bus interfaces |
Pinout & Package
71V3577S85BGG is packaged in a JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm body, with 0.5 mm pitch. Pin 1 marked by corner notch; top-side marking includes "71V3577S85BGG" and date code.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | Synchronous address latching on rising CLK edge gated by ADSP/ADSC; A0–A16 used for 128K×36 mode |
| CLK | System Clock Input | Primary timing reference; all synchronous inputs referenced to rising edge; no internal clock division |
| GW, BWE, BW1–BW4 | Write Control Inputs | GW enables full 36-bit writes; BWE gates byte enables; BW1–BW4 select 9-bit bytes (I/O0–7+I/OP1, etc.) |
| ADV, ADSP, ADSC | Burst & Address Status | ADV advances burst counter; ADSP (processor) and ADSC (cache) load address register asynchronously to CLK |
| LBO, ZZ, OE | Mode & Output Controls | LBO sets burst order (LOW = linear); ZZ enables sleep mode (HIGH); OE enables flow-through outputs (LOW) |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O | 36-bit bidirectional data bus; inputs registered on CLK rise; outputs unregistered (flow-through) |
| VDD, VDDQ, VSS | Power & Ground | Dual supply: VDD powers core logic; VDDQ powers I/O drivers; separate VSS pins per supply domain reduce noise coupling |
Key Features
| Feature | Design Value |
|---|---|
| Single-Cycle Deselect | Chip deactivation completes within one clock cycle - eliminates bus contention during rapid context switching |
| Self-Timed Write Cycle | Write completion determined internally without external timing constraints - simplifies system-level timing closure |
| Linear/Interleaved Burst Selection | LBO pin configures burst address sequence at power-up - supports both cache-line and sequential-access patterns |
| Flow-Through Output Architecture | No output register - data appears on I/O pins with fixed tCD delay after CLK rise - enables deterministic read latency |
| Industrial Temperature Support | Validated operation from –40°C to +85°C at 8.5 ns speed - suitable for outdoor telecom and factory automation |
Applications
| High-Speed Network Line Cards | Telecom Baseband Processing |
|---|---|
Use Scenario: Buffering packet headers and metadata in 10G/25G Ethernet switch fabric ASIC interfaces. IC Role / Device Role / Timing Role: Synchronous SRAM providing low-latency, burst-capable storage between MAC and traffic manager. Use Value: 8.5 ns access + flow-through outputs deliver sub-10 ns read turnaround, enabling line-rate packet classification. | Use Scenario: Storing channelized voice samples and control tables in 4G/LTE remote radio head (RRH) units. IC Role / Device Role / Timing Role: Burst-mode memory interfacing directly with DSP cores requiring 36-bit wide data paths. Use Value: Linear burst mode (LBO=LOW) matches sequential DMA transfers from baseband processors, reducing address overhead. |
| Industrial PLC Motion Controllers | Radar Signal Processing Modules |
Use Scenario: Real-time interpolation buffer for multi-axis servo trajectory generation in CNC motion controllers. IC Role / Device Role / Timing Role: Deterministic-access memory holding position setpoints and velocity profiles for FPGA-based interpolators. Use Value: Single-cycle deselect and industrial temp rating ensure reliable operation during rapid command updates in harsh factory environments. | Use Scenario: Storing FFT coefficients and radar pulse descriptors in airborne phased-array radar front-ends. IC Role / Device Role / Timing Role: High-bandwidth memory supporting burst reads of 36-bit complex sample vectors from ADC/DSP pipelines. Use Value: 128K × 36 organization provides 4.6 Mbit of coherent storage aligned to 36-bit processing word size. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ISSI IS61WV102436B | 1M × 36-bit, 6.5 ns min access, 3.3 V only, no LBO or ADV - fixed linear burst | Lacks configurable burst order and ADV-controlled suspend; higher density but less flexible control | Choose when fixed-burst simplicity and higher capacity outweigh need for interleaved mode or burst suspension |
| Cypress CY7C1371D | 128K × 36-bit, 7.5 ns max access, supports 2.5 V/3.3 V I/O, no BGA option - TQFP-100 only | Lower max frequency (117 MHz vs. 87 MHz for 71V3577S85BGG), no 119-ball BGA package variant | Choose when 7.5 ns timing suffices and dual-voltage I/O compatibility is required for mixed-supply systems |
Compared with IS61WV102436B and CY7C1371D, the 71V3577S85BGG uniquely combines industrial-temperature 8.5 ns operation, LBO-configurable burst order, and ADV-suspend capability - making it optimal for timing-critical, field-deployed systems requiring burst flexibility and thermal robustness.
Availability
71V3577S85BGG is available at Aetrix Electronics and suitable for high-speed network line cards, telecom baseband processing, and industrial PLC motion controllers requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for 71V3577S85BGG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.
The 71V3577S family targets high-performance, low-latency memory subsystems in telecom infrastructure and real-time control systems - emphasizing burst efficiency, deterministic timing, and industrial reliability.
FAQ
What is the maximum operating frequency supported by the 71V3577S85BGG?
The 71V3577S85BGG supports up to 87 MHz clock frequency with an 8.5 ns access time, validated across both commercial (0°C to +70°C) and industrial (–40°C to +85°C) temperature ranges. This speed grade is available in the TQFP-100 package and requires VDD and VDDQ at 3.3 V ±5%.
Does the 71V3577S85BGG support both linear and interleaved burst modes?
Yes, the 71V3577S85BGG supports both burst modes via the LBO (Linear Burst Order) pin: LBO = LOW selects linear sequence; LBO = HIGH selects interleaved sequence. This configuration is static and must remain stable during device operation to prevent undefined burst behavior.
What is the function of the ADV pin on the 71V3577S85BGG?
The ADV (Burst Address Advance) pin on the 71V3577S85BGG controls burst counter progression: ADV = LOW advances the internal counter for the next burst address; ADV = HIGH suspends advancement, holding the current address for repeated access. It operates synchronously with CLK and is sampled on the rising edge.
How does the 71V3577S85BGG handle power-down and sleep modes?
The 71V3577S85BGG enters full sleep mode when ZZ is driven HIGH, reducing supply current to 30 mA (IZZ). In this state, the clock is gated internally and data retention is guaranteed. The device requires tZZR (≥100 ns) recovery time before resuming normal operation after ZZ returns LOW.
Is the 71V3577S85BGG pin-compatible with other devices in the 71V3577/79 family?
Yes, the 71V3577S85BGG shares identical pinout and electrical characteristics with other speed grades (e.g., 71V3577S75BGG, 71V3577S80BGG) in the same TQFP-100 package. However, it is not pin-compatible with the 256K × 18 variants (e.g., 71V3579S85BGG) due to differing address and byte-enable pin allocations.
71V3577S85BGG Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 119-BGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 4.5Mbit
- Memory Organization:
- 128K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 87 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 8.5 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 119-PBGA (14x22)
71V3577S85BGG FAQ
1.How can I place an order for 71V3577S85BGG through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V3577S85BGG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V3577S85BGG reliable?
The price and inventory of 71V3577S85BGG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V3577S85BGG is usually 5 days.
3.What payment methods are accepted for 71V3577S85BGG?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V3577S85BGG transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 71V3577S85BGG?
71V3577S85BGG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V3577S85BGG order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V3577S85BGG?
For technical support, including 71V3577S85BGG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V3577S85BGG requirements.
6.How does Aetrix verify that 71V3577S85BGG is sourced from the original manufacturer or authorized distributors?
All 71V3577S85BGG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V3577S85BGG meets industry standards.
7.What is the process for return or replacement of 71V3577S85BGG?
All 71V3577S85BGG units undergo pre-shipment inspection (PSI). If there is an issue with 71V3577S85BGG, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V3577S85BGG part is unused and in its original packaging.
Return procedure for 71V3577S85BGG:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V3577S85BGG Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
-
AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
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