Renesas 71V3577S85BGG8
- Part No.:
- 71V3577S85BGG8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 119-BGA
- Datasheet:
-
71V3577S85BGG8.pdf
- Description:
- IC SRAM 4.5MBIT PAR 119PBGA
- Quantity:
- Payment:

- Shipping:

Inventory:3,250
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
71V3577S85BGG8 from Renesas Electronics is a 128K × 36-bit (4.608 Mb), 3.3V synchronous SRAM with flow-through outputs, burst counter, and single-cycle deselect. It supports 8.5 ns access time at up to 87 MHz clock frequency, operates across industrial temperature range (–40°C to +85°C), and uses JEDEC-standard 119-ball BGA (BGG) packaging. It serves as high-speed cache or buffer memory in networking line cards and telecom baseband processors.
For engineers reviewing the 71V3577S85BGG8 datasheet, 71V3577S85BGG8 pinout, 71V3577S85BGG8 application, or 71V3577S85BGG8 equivalent, key selection criteria include burst mode support (linear/interleaved), flow-through output architecture, 3.3V I/O compatibility, industrial temperature rating, and TQFP/BGA package options - all critical for deterministic latency in real-time packet buffering and control-plane memory subsystems.
Technical Context
The 71V3577S85BGG8 implements a synchronous, clock-driven interface with registered address, control, and data inputs, but unregistered (flow-through) data outputs - enabling minimal read latency. Its internal burst address counter advances on ADV=LOW and selects sequence order via LBO pin (linear vs. interleaved), supporting four-word bursts per address cycle.
Write operations are self-timed and configurable via global write (GW), byte write enable (BWE), and individual byte write selects (BW1–BW4). Power management includes asynchronous ZZ sleep mode (≤35 µA standby current) and synchronous chip deselect, ensuring rapid entry/exit from low-power states without data loss.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 128K × 36-bit (4.608 Mbit); supports 256K × 18-bit configuration via address mapping |
| Access Time / Max Frequency | 8.5 ns access time; supports up to 87 MHz clock frequency in industrial temperature range |
| Supply Voltages | 3.3 V ±5% core (VDD) and I/O (VDDQ); separate power domains reduce noise coupling |
| Burst Mode | Linear or interleaved 4-word burst controlled by LBO pin; no external counter required |
| Output Architecture | Flow-through (unregistered) outputs; eliminates output register delay for sub-ns timing predictability |
| Power-Down Current | ≤35 µA in full sleep mode (ZZ HIGH); enables ultra-low-power idle states in always-on systems |
| Operating Temperature | –40°C to +85°C industrial grade; qualified for base station and industrial control environments |
Pinout & Package
71V3577S85BGG8 is packaged in a JEDEC-standard 119-ball fine-pitch BGA (BGG119), 12 mm × 12 mm body, 0.8 mm ball pitch. Pinout conforms to Renesas BG119 layout for 128K × 36 configuration, with dedicated VDDQ/VSS pairs per quadrant for I/O power integrity.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | Synchronous address latching on ADSP/ADSC edge; A0–A16 used for 128K × 36 addressing |
| CLK | Master Clock Input | Single-phase edge-triggered reference for all synchronous operations; no internal PLL |
| ADV | Burst Address Advance | Active-LOW signal that increments internal burst counter; HIGH suspends burst sequence |
| LBO | Linear/Interleaved Burst Order | Static DC input selecting burst address sequence; must remain stable during operation |
| GW, BWE, BW1–BW4 | Write Control Inputs | GW enables full 36-bit writes; BWE gates byte writes; BWx select 9-bit byte lanes (I/O0–7/I/OP1, etc.) |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O | 36-bit bidirectional bus with flow-through output path; no output register stage |
| ZZ | Asynchronous Sleep Mode | Asynchronous HIGH assertion disables internal clock and reduces ICC to ≤35 µA |
| OE | Asynchronous Output Enable | Asynchronous control of output drivers; enables fast tristate during burst transitions |
Key Features
| Feature | Design Value |
|---|---|
| Flow-through output architecture | Eliminates output register delay, delivering tCD = 8.5 ns clock-to-data for deterministic read timing |
| Configurable burst order (LBO) | Hardware-selectable linear or interleaved 4-word burst sequences match CPU/cache controller expectations |
| Single-cycle deselect | Chip deactivation completes within one CLK cycle, enabling rapid context switching between memory banks |
| Self-timed write with byte granularity | GW + BWE + BWx logic enables full-word or 9-bit partial writes without external timing control |
| Industrial-grade power management | ZZ sleep mode guarantees data retention at ≤35 µA, supporting fanless or thermally constrained deployments |
Applications
| Telecom Line Card Buffering | Network Processor Cache |
|---|---|
Use Scenario: Storing packet headers and metadata in high-throughput Ethernet switch ASIC interfaces. IC Role / Device Role / Timing Role: Low-latency, burst-capable SRAM acting as first-level packet descriptor buffer with deterministic 8.5 ns read access. Use Value: Flow-through outputs and single-cycle deselect enable back-to-back packet processing at 87 MHz without pipeline stalls. | Use Scenario: Serving as instruction/data cache for multi-core network processors in 5G baseband units. IC Role / Device Role / Timing Role: Synchronous SRAM providing burst-aligned instruction fetches to reduce CPI in RISC-based control-plane cores. Use Value: Linear/interleaved burst modes align with processor prefetch patterns, improving cache hit efficiency by >12% in benchmarked traffic profiles. |
| Industrial PLC Motion Control | Radar Signal Processing Buffer |
Use Scenario: Real-time storage of servo position setpoints and encoder feedback in CNC motion controllers. IC Role / Device Role / Timing Role: Deterministic-access SRAM interfacing directly with FPGA-based motion sequencers requiring jitter-free memory reads. Use Value: Industrial temperature rating (–40°C to +85°C) and 8.5 ns access ensure timing compliance across factory ambient extremes. | Use Scenario: Temporary storage of digitized IF samples in phased-array radar front-end modules. IC Role / Device Role / Timing Role: High-bandwidth, low-jitter buffer synchronizing ADC output streams to DSP FFT engines. Use Value: 36-bit wide bus and burst capability support 12-bit × 3-sample parallel capture, reducing DMA overhead by 3× vs. narrow-bus alternatives. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1371DV33-85BAXI | 128K × 36, 3.3V, 85 MHz max, 119-ball BGA; no LBO pin - fixed interleaved burst only | Lacks hardware-configurable burst order; requires firmware adaptation for linear-burst systems | Select when burst sequence is fixed and LBO flexibility is unnecessary; identical pinout and timing envelope |
| AS7C33128P36B-85BIN | 128K × 36, 3.3V, 85 MHz, 100-pin TQFP; flow-through outputs but no ADV/LBO controls - burst disabled | Supports only single-word random access; no burst counter or address advance logic | Choose for simpler, non-burst designs where PCB space favors TQFP and burst features are unused |
Compared with CY7C1371DV33-85BAXI and AS7C33128P36B-85BIN, the 71V3577S85BGG8 uniquely delivers hardware-selectable burst order (LBO) and ADV-gated burst control in an industrial-rated 119-ball BGA - essential for systems requiring runtime burst-mode reconfiguration without firmware overhead.
Availability
71V3577S85BGG8 is available at Aetrix Electronics and suitable for telecom infrastructure, industrial automation, and radar signal processing applications requiring stable component supply, long-term lifecycle support, and guaranteed industrial temperature performance.
Supply support for 71V3577S85BGG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.
The 71V3577S family targets high-performance, low-latency memory subsystems in real-time communication and control equipment, emphasizing deterministic timing, burst efficiency, and industrial reliability.
FAQ
What memory organization does the 71V3577S85BGG8 support?
The 71V3577S85BGG8 is organized as 128K × 36 bits (4.608 Mbit) and can also be configured as 256K × 18 bits using address pin remapping. This dual-organization flexibility allows system designers to optimize data bus width and address decoding for specific SoC or FPGA interfaces without changing the 71V3577S85BGG8 footprint.
Does the 71V3577S85BGG8 support both linear and interleaved burst modes?
Yes, the 71V3577S85BGG8 supports both linear and interleaved burst sequences via the LBO (Linear Burst Order) pin. When LBO = LOW, linear burst is selected; when LBO = HIGH, interleaved burst is active. This hardware-selectable mode ensures compatibility with diverse cache controllers and avoids software configuration overhead in the 71V3577S85BGG8 implementation.
What is the maximum clock frequency supported by the 71V3577S85BGG8 in industrial temperature range?
The 71V3577S85BGG8 supports up to 87 MHz clock frequency in the industrial temperature range (–40°C to +85°C), corresponding to an 8.5 ns access time. This speed grade is validated across the full industrial operating voltage range (3.135 V to 3.465 V) and is guaranteed per Renesas AC Electrical Characteristics Table 16.
How does the flow-through output architecture of the 71V3577S85BGG8 affect system timing?
The flow-through output architecture of the 71V3577S85BGG8 eliminates the output register stage, resulting in direct array-to-I/O path timing. This reduces clock-to-data delay (tCD) to 8.5 ns and removes output register setup/hold constraints - simplifying timing closure in high-speed interfaces and enabling tighter read cycle margins in the 71V3577S85BGG8 design.
Is the 71V3577S85BGG8 compatible with 3.3V-only system interfaces?
Yes, the 71V3577S85BGG8 uses separate 3.3V ±5% supplies for core (VDD) and I/O (VDDQ), with VIH thresholds referenced to VDDQ. All inputs accept 3.3V-compatible logic levels, and outputs drive 3.3V CMOS levels - making the 71V3577S85BGG8 fully interoperable with standard 3.3V FPGA, ASIC, and processor buses without level-shifting.
71V3577S85BGG8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 119-BGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 4.5Mbit
- Memory Organization:
- 128K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 87 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 8.5 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 119-PBGA (14x22)
71V3577S85BGG8 FAQ
1.How can I place an order for 71V3577S85BGG8 through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V3577S85BGG8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V3577S85BGG8 reliable?
The price and inventory of 71V3577S85BGG8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V3577S85BGG8 is usually 5 days.
3.What payment methods are accepted for 71V3577S85BGG8?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V3577S85BGG8 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 71V3577S85BGG8?
71V3577S85BGG8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V3577S85BGG8 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V3577S85BGG8?
For technical support, including 71V3577S85BGG8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V3577S85BGG8 requirements.
6.How does Aetrix verify that 71V3577S85BGG8 is sourced from the original manufacturer or authorized distributors?
All 71V3577S85BGG8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V3577S85BGG8 meets industry standards.
7.What is the process for return or replacement of 71V3577S85BGG8?
All 71V3577S85BGG8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V3577S85BGG8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V3577S85BGG8 part is unused and in its original packaging.
Return procedure for 71V3577S85BGG8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V3577S85BGG8 Tags

-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology

-
AT21CS01-STUM10-T
Microchip Technology

-
AT24C02C-SSHM-T
Microchip Technology

-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics

-
AT24CS02-SSHM-T
Microchip Technology

-
93LC46BT-I/OT
Microchip Technology

-
AT24C04C-SSHM-T
Microchip Technology

-
24LC01BT-I/SN
Microchip Technology

-
24AA02UIDT-I/OT
Microchip Technology

-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

