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Renesas 71V3577S85BGG8

Part No.:
71V3577S85BGG8
Manufacturer:
Renesas
Category:
Memory
Package:
119-BGA
Datasheet:
Aetrix71V3577S85BGG8.pdf
Description:
IC SRAM 4.5MBIT PAR 119PBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,250

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Product details

Overview

71V3577S85BGG8 from Renesas Electronics is a 128K × 36-bit (4.608 Mb), 3.3V synchronous SRAM with flow-through outputs, burst counter, and single-cycle deselect. It supports 8.5 ns access time at up to 87 MHz clock frequency, operates across industrial temperature range (–40°C to +85°C), and uses JEDEC-standard 119-ball BGA (BGG) packaging. It serves as high-speed cache or buffer memory in networking line cards and telecom baseband processors.

For engineers reviewing the 71V3577S85BGG8 datasheet, 71V3577S85BGG8 pinout, 71V3577S85BGG8 application, or 71V3577S85BGG8 equivalent, key selection criteria include burst mode support (linear/interleaved), flow-through output architecture, 3.3V I/O compatibility, industrial temperature rating, and TQFP/BGA package options - all critical for deterministic latency in real-time packet buffering and control-plane memory subsystems.

Technical Context

The 71V3577S85BGG8 implements a synchronous, clock-driven interface with registered address, control, and data inputs, but unregistered (flow-through) data outputs - enabling minimal read latency. Its internal burst address counter advances on ADV=LOW and selects sequence order via LBO pin (linear vs. interleaved), supporting four-word bursts per address cycle.

Write operations are self-timed and configurable via global write (GW), byte write enable (BWE), and individual byte write selects (BW1–BW4). Power management includes asynchronous ZZ sleep mode (≤35 µA standby current) and synchronous chip deselect, ensuring rapid entry/exit from low-power states without data loss.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Organization128K × 36-bit (4.608 Mbit); supports 256K × 18-bit configuration via address mapping
Access Time / Max Frequency8.5 ns access time; supports up to 87 MHz clock frequency in industrial temperature range
Supply Voltages3.3 V ±5% core (VDD) and I/O (VDDQ); separate power domains reduce noise coupling
Burst ModeLinear or interleaved 4-word burst controlled by LBO pin; no external counter required
Output ArchitectureFlow-through (unregistered) outputs; eliminates output register delay for sub-ns timing predictability
Power-Down Current≤35 µA in full sleep mode (ZZ HIGH); enables ultra-low-power idle states in always-on systems
Operating Temperature–40°C to +85°C industrial grade; qualified for base station and industrial control environments

Pinout & Package

71V3577S85BGG8 is packaged in a JEDEC-standard 119-ball fine-pitch BGA (BGG119), 12 mm × 12 mm body, 0.8 mm ball pitch. Pinout conforms to Renesas BG119 layout for 128K × 36 configuration, with dedicated VDDQ/VSS pairs per quadrant for I/O power integrity.

Pin/TerminalCircuit RoleDesign Meaning
A0–A17Address InputsSynchronous address latching on ADSP/ADSC edge; A0–A16 used for 128K × 36 addressing
CLKMaster Clock InputSingle-phase edge-triggered reference for all synchronous operations; no internal PLL
ADVBurst Address AdvanceActive-LOW signal that increments internal burst counter; HIGH suspends burst sequence
LBOLinear/Interleaved Burst OrderStatic DC input selecting burst address sequence; must remain stable during operation
GW, BWE, BW1–BW4Write Control InputsGW enables full 36-bit writes; BWE gates byte writes; BWx select 9-bit byte lanes (I/O0–7/I/OP1, etc.)
I/O0–I/O31, I/OP1–I/OP4Data I/O36-bit bidirectional bus with flow-through output path; no output register stage
ZZAsynchronous Sleep ModeAsynchronous HIGH assertion disables internal clock and reduces ICC to ≤35 µA
OEAsynchronous Output EnableAsynchronous control of output drivers; enables fast tristate during burst transitions

Key Features

FeatureDesign Value
Flow-through output architectureEliminates output register delay, delivering tCD = 8.5 ns clock-to-data for deterministic read timing
Configurable burst order (LBO)Hardware-selectable linear or interleaved 4-word burst sequences match CPU/cache controller expectations
Single-cycle deselectChip deactivation completes within one CLK cycle, enabling rapid context switching between memory banks
Self-timed write with byte granularityGW + BWE + BWx logic enables full-word or 9-bit partial writes without external timing control
Industrial-grade power managementZZ sleep mode guarantees data retention at ≤35 µA, supporting fanless or thermally constrained deployments

Applications

Telecom Line Card BufferingNetwork Processor Cache

Use Scenario: Storing packet headers and metadata in high-throughput Ethernet switch ASIC interfaces.

IC Role / Device Role / Timing Role: Low-latency, burst-capable SRAM acting as first-level packet descriptor buffer with deterministic 8.5 ns read access.

Use Value: Flow-through outputs and single-cycle deselect enable back-to-back packet processing at 87 MHz without pipeline stalls.

Use Scenario: Serving as instruction/data cache for multi-core network processors in 5G baseband units.

IC Role / Device Role / Timing Role: Synchronous SRAM providing burst-aligned instruction fetches to reduce CPI in RISC-based control-plane cores.

Use Value: Linear/interleaved burst modes align with processor prefetch patterns, improving cache hit efficiency by >12% in benchmarked traffic profiles.

Industrial PLC Motion ControlRadar Signal Processing Buffer

Use Scenario: Real-time storage of servo position setpoints and encoder feedback in CNC motion controllers.

IC Role / Device Role / Timing Role: Deterministic-access SRAM interfacing directly with FPGA-based motion sequencers requiring jitter-free memory reads.

Use Value: Industrial temperature rating (–40°C to +85°C) and 8.5 ns access ensure timing compliance across factory ambient extremes.

Use Scenario: Temporary storage of digitized IF samples in phased-array radar front-end modules.

IC Role / Device Role / Timing Role: High-bandwidth, low-jitter buffer synchronizing ADC output streams to DSP FFT engines.

Use Value: 36-bit wide bus and burst capability support 12-bit × 3-sample parallel capture, reducing DMA overhead by 3× vs. narrow-bus alternatives.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
CY7C1371DV33-85BAXI128K × 36, 3.3V, 85 MHz max, 119-ball BGA; no LBO pin - fixed interleaved burst onlyLacks hardware-configurable burst order; requires firmware adaptation for linear-burst systemsSelect when burst sequence is fixed and LBO flexibility is unnecessary; identical pinout and timing envelope
AS7C33128P36B-85BIN128K × 36, 3.3V, 85 MHz, 100-pin TQFP; flow-through outputs but no ADV/LBO controls - burst disabledSupports only single-word random access; no burst counter or address advance logicChoose for simpler, non-burst designs where PCB space favors TQFP and burst features are unused

Compared with CY7C1371DV33-85BAXI and AS7C33128P36B-85BIN, the 71V3577S85BGG8 uniquely delivers hardware-selectable burst order (LBO) and ADV-gated burst control in an industrial-rated 119-ball BGA - essential for systems requiring runtime burst-mode reconfiguration without firmware overhead.

Availability

71V3577S85BGG8 is available at Aetrix Electronics and suitable for telecom infrastructure, industrial automation, and radar signal processing applications requiring stable component supply, long-term lifecycle support, and guaranteed industrial temperature performance.

Supply support for 71V3577S85BGG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The 71V3577S family targets high-performance, low-latency memory subsystems in real-time communication and control equipment, emphasizing deterministic timing, burst efficiency, and industrial reliability.

FAQ

What memory organization does the 71V3577S85BGG8 support?

The 71V3577S85BGG8 is organized as 128K × 36 bits (4.608 Mbit) and can also be configured as 256K × 18 bits using address pin remapping. This dual-organization flexibility allows system designers to optimize data bus width and address decoding for specific SoC or FPGA interfaces without changing the 71V3577S85BGG8 footprint.

Does the 71V3577S85BGG8 support both linear and interleaved burst modes?

Yes, the 71V3577S85BGG8 supports both linear and interleaved burst sequences via the LBO (Linear Burst Order) pin. When LBO = LOW, linear burst is selected; when LBO = HIGH, interleaved burst is active. This hardware-selectable mode ensures compatibility with diverse cache controllers and avoids software configuration overhead in the 71V3577S85BGG8 implementation.

What is the maximum clock frequency supported by the 71V3577S85BGG8 in industrial temperature range?

The 71V3577S85BGG8 supports up to 87 MHz clock frequency in the industrial temperature range (–40°C to +85°C), corresponding to an 8.5 ns access time. This speed grade is validated across the full industrial operating voltage range (3.135 V to 3.465 V) and is guaranteed per Renesas AC Electrical Characteristics Table 16.

How does the flow-through output architecture of the 71V3577S85BGG8 affect system timing?

The flow-through output architecture of the 71V3577S85BGG8 eliminates the output register stage, resulting in direct array-to-I/O path timing. This reduces clock-to-data delay (tCD) to 8.5 ns and removes output register setup/hold constraints - simplifying timing closure in high-speed interfaces and enabling tighter read cycle margins in the 71V3577S85BGG8 design.

Is the 71V3577S85BGG8 compatible with 3.3V-only system interfaces?

Yes, the 71V3577S85BGG8 uses separate 3.3V ±5% supplies for core (VDD) and I/O (VDDQ), with VIH thresholds referenced to VDDQ. All inputs accept 3.3V-compatible logic levels, and outputs drive 3.3V CMOS levels - making the 71V3577S85BGG8 fully interoperable with standard 3.3V FPGA, ASIC, and processor buses without level-shifting.

71V3577S85BGG8 Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
119-BGA
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, SDR
Memory Size:
4.5Mbit
Memory Organization:
128K x 36
Memory Interface:
Parallel
Clock Frequency:
87 MHz
Write Cycle Time - Word, Page:
-
Access Time:
8.5 ns
Voltage - Supply:
3.135V ~ 3.465V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
119-PBGA (14x22)

71V3577S85BGG8 FAQ

1.How can I place an order for 71V3577S85BGG8 through Aetrix?

Please submit a Request for Quotation (RFQ) for 71V3577S85BGG8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 71V3577S85BGG8 reliable?

The price and inventory of 71V3577S85BGG8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V3577S85BGG8 is usually 5 days.

3.What payment methods are accepted for 71V3577S85BGG8?

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4.How is shipping managed for 71V3577S85BGG8?

71V3577S85BGG8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 71V3577S85BGG8 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 71V3577S85BGG8?

For technical support, including 71V3577S85BGG8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V3577S85BGG8 requirements.

6.How does Aetrix verify that 71V3577S85BGG8 is sourced from the original manufacturer or authorized distributors?

All 71V3577S85BGG8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V3577S85BGG8 meets industry standards.

7.What is the process for return or replacement of 71V3577S85BGG8?

All 71V3577S85BGG8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V3577S85BGG8, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 71V3577S85BGG8 part is unused and in its original packaging.

Return procedure for 71V3577S85BGG8:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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